TIP41 SERIES (TIP41/41A/41B/41C)

MEDIUM POWER LINEAR SWITCHING APPLICATIONS

Complement to TIP42/42A/42B/42C

NPN EPITAXIAL SILICON TRANSISTOR

TO-220

ABSOLUTE MAXIMUM RATINGS

Characteristic Collector Base Voltage : TIP41 : TIP41A : TIP41B : TIP41C : TIP41 : TIP41A : TIP41B : TIP41C Symbol VCBO Rating 40 60 80 100 40 60 80 100 5 6 10 2 65 2 150 -65 ~ 150 Unit V V V V V V V V V A A A W W C C

Collector Emitter Voltage

VCEO

1.Base 2.Collector 3.Emitter

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (TA=25C) Junction Temperature Storage Temperature

VEBO IC IC IB PC PC TJ T STG

ELECTRICAL CHARACTERISTICS (TC =25C)

Characteristic *Collector Emitter Sustaining Voltage : TIP41 : TIP41A : TIP41B : TIP41C : TIP41/41A : TIP41B/41C : TIP41 : TIP41A : TIP41B : TIP41C Symbol BVCEO(sus) Test Conditions IC = 30mA, IB = 0 Min 40 60 80 100 0.7 0.7 400 400 400 400 1 30 15 75 1.5 2.0 Max Unit V V V V mA mA A A A A mA

Collector Cutoff Current Collector Cutoff Current

ICEO ICES

Emitter Cutoff Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter On Voltage Current Gain Bandwidth Product * Pulse Test: PW<300s, Duty Cycle<2%

IEBO hFE VCE(sat) VBE(on) fT

VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 VEB = 5V, IC = 0 VCE = 4V,IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 600mA VCE = 4V, IC = 6A VCE = 10V, IC = 500mA f = 1MHz

3.0

V V MHz

Rev. B

1999 Fairchild Semiconductor Corporation

TIP41 SERIES (TIP41/41A/41B/41C)

NPN EPITAXIAL SILICON TRANSISTOR

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