GaAs MMIC

Data Sheet Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V Ion-implanted planar structure

CF 750

SOT-143

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type

Marking Ordering Code (taped) MX Q62702-F1391

Pin Configuration 1 GND 2 D 3 G 4 S

Package1)

CF 750
1)

P-SOT143-4-1

For detailed dimensions see Page 9.

Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Gate-source peak current Channel temperature Storage temperature range Total power dissipat. (TS < 48 C)1)
1)

Symbol

Value 8 5 80 2 150 55 + 150 300

Unit V V mA mA

VDS
VGS

ID
+ IGSM

TCh Tstg Ptot

C C
mW

TS: Temperature measured at soldering point

Thermal Resistance Parameter Channel-soldering point (GND)

Data Sheet

Symbol

Value 340

Unit K/W
2001-01-01

RthChGND
1

GaAs Components
CF 750

20 k

D G 5 k 10 pF 500 S

EHT08527

Figure 1

Circuit Diagram

Electrical Characteristics TA = 25 C, unless otherwise specified DC Characteristics Symbol Limit Values min. Drain-Source Breakdown Voltage Drain Current S-pin not connected Drain Current S-pin connected to GND Transconductance S-pin connected to GND typ. 2 50 25 max. 2.8 V mA mA mS Unit Test Conditions

VDS(BR) IDSS,P IDSS gm

8 1.6

ID = 500 A, VGS = 4 V VGGND = 0 V, VDS = 3.8 V VGS = 0 V, VDS = 3.8 V ID = 10 mA, VDS = 3.8 V

Data Sheet

2001-01-01

GaAs Components
CF 750 Electrical Characteristics of CF 750 in Amplifier Application

TA = 25 C, VDGND = 3.8 V, RS = RL = 50 , unless otherwise specified.

Amplifier Application Power Gain Noise Figure 3rd Order Intermodulation 3rd Order Intermodulation Power Gain Noise Figure 3rd Order Intermodulation 3rd Order Intermodulation Symbol min. Limit Values typ. 11 1.6 1 10 10 1.9 1 9 max. dB dB dBm dBm dB dB dBm dBm Unit Test Conditions

GPS NF IPIP3 OPIP3 GPS F IPIP3 OPIP3

ID = 2 mA, f = 900 MHz ID = 2 mA, f = 900 MHz ID = 2 mA, f = 900 MHz ID = 2 mA, f = 900 MHz ID = 2 mA, f = 1.8 GHz ID = 2 mA, f = 1.8 GHz ID = 2 mA, f = 1.8 GHz ID = 2 mA, f = 1.8 GHz

Data Sheet

2001-01-01

GaAs Components
CF 750 Electrical Characteristics of CF 750 in Mixer Application TA = 25 C, VDGND = 3.8 V, RS = RL = 50 , unless otherwise specified. Mixer Application Symbol min. Single Sideband Noise Figure Limit Values typ. 4.5 max. dB Unit Test Conditions

FSSB

fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm

Conversion Gain

GA

15

dB

3rd Order Intermodulation

IPIP3

dBm

3rd Order Intermodulation

OPIP3

10

dBm

Data Sheet

2001-01-01

GaAs Components
CF 750 Typical Common Source S-Parameters Bias conditions: VDGND = 3.8 V, ID = 2 mA Source-Pad RF-grounded by capacitor with low inductance (< 0.5 nH)!

f
GHz 0.01 0.1 0.25 0.5 0.75 1.00 1.25 1.5 1.75 2.00 2.25 2.5 2.75 3.00 MAG 0.97 0.97 0.96 0.94 0.91 0.87 0.83 0.87 0.72 0.66 0.61 0.56 0.52 0.49

S11 ANG 1 3 8 16 26 34 42 49 57 65 73 81 87 93 MAG 1.78 1.78 1.76 1.73 1.70 1.68 1.65 1.62 1.59 1.54 1.51 1.47 1.45 1.42

S21 ANG 179 175 169 155 141 127 118 108 95 82 71 60 52 45 MAG 0.002 0.008 0.015 0.027 0.039 0.046 0.052 0.061 0.066 0.069 0.071 0.073 0.074 0.075

S12 ANG 89 84 78 75 71 64 62 57 55 52 54 60 63 66 MAG 0.98 0.98 0.97 0.95 0.93 0.91 0.89 0.88 0.87 0.86 0.85 0.84 0.83 0.82

S22 ANG 1 2 6 11 16 22 26 30 34 38 43 48 52 56

Data Sheet

2001-01-01

GaAs Components
CF 750 Typical Common Source Noise Parameters Bias conditions: VD = 3 V, ID = 2 mA, Z = 50

f
MHz 200 450 800 900 1200 1500 1800 1900 MAG 0.80 0.79 0.68 0.63 0.58 0.54 0.52 0.50

opt (F)
ANG 5 12 23 26 34 42 51 53

Rn

75 60 51 49 45 40 36 35

Rn/50
1.50 1.20 1.02 0.98 0.90 0.80 0.72 0.70

Fmin
dB 1.2 1.2 1.5 1.6 1.7 1.8 1.9 1.9

Data Sheet

2001-01-01

GaAs Components
CF 750 Output Characteristics ID = f(VDGND); at Nominal Operating Point; S not Connected
2.5
EHT08528

Output Characteristics ID = f(VDS); S Connected to GND

EHT08529

50

ID mA
2.0

VGGND = 0 V
-0.2 V

ID mA
40

VGS = 0 V

1.5

-0.4 V -0.6 V

30

-0.2 V

1.0

-0.8 V -1 V

20

-0.4 V

-0.6 V 10 -0.8 V -1 V

0.5

7 V 8

7 V 8

VDGND

VDS

Data Sheet

2001-01-01

GaAs Components
CF 750

3.8 V 1 nF CF 750 D G S 1 nF IF

RF

* GND

LO

EHT08530

Figure 2

Mixer Measurement and Application Circuit (No. 1)

* must be high capacitance to ensure good IF grounding at source

3.8 V 100 pF CF 750 D G S RF

RF

100 pF

GND

EHT08531

Figure 3

Amplifier Measurement and Application Circuit (No. 2)

Data Sheet

2001-01-01

GaAs Components
CF 750 Package Outlines P-SOT143-4-1 (Small Outline Transistor)

2.9 0.1 1.9 0.7 0.2

1.1 max 0.1 max 0.3 0.1 3 +0.2 acc. to DIN 6784

A 4

2.6 max 10 max

0.8 -0.05

+0.1

2 0.4 +0.1 -0.05

0.55 -0.1

1.7 0.25
M

0.08...0.15
2... 30
GPS05559

0.20

Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. SMD = Surface Mounted Device Data Sheet 9

10 max 1.3 0.1

Dimensions in mm 2001-01-01