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Ordering number : ENN6959

2SK3491
N-Channel Silicon MOSFET

2SK3491
Ultrahigh-Speed Switching Applications
Features

Package Dimensions
unit : mm 2083B
[2SK3491]
6.5 5.0 4
1.5

Low ON-resistance. Low Qg.

2.3

0.5

0.85 0.7
0.8 1.6

5.5

7.0

1.2
7.5

0.6

0.5

1 : Gate 2 : Drain 3 : Source 4 : Drain


2.3

2.3

SANYO : TP

Package Dimensions
unit : mm 2092B
[2SK3491]
6.5 5.0 4 2.3

1.5

0.5

5.5

7.0

0.85

0.5

1 0.6

0.8

2.5

1.2

1.2 0 to 0.2

1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA

2.3

2.3

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3255 No.6959-1/4

2SK3491 Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings 600 30 1.0 4.0 1.0 20 150 --55 to +150 Unit V V A A W W C C

Electrical Characteristics at Ta=25C


Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD Conditions ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.5A VDS=10V, ID=0.5A VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, VGS=10V, ID=1.0A See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=1.0A, VGS=0 2.5 430 850 8.5 135 40 20 6 8 7 17 30 0.83 1.2 11 Ratings min 600 100 100 3.5 typ max Unit V A nA V mS pF pF pF nC ns ns ns ns V

Marking : K3491

Switching Time Test Circuit


10V 0V VIN

VDD=200V ID=0.5A RL=400

D
PW=1s D.C.0.5% VIN

VOUT

G
P.G RGS 50

2SK3491

2.0 1.8 1.6

ID -- VDS
10.
0 20. V

1.6

ID -- VGS
VDS=10V

0V

1.4

Tc= --25C
25C

6.0V
Drain Current, ID -- A

Drain Current, ID -- A

1.2 1.0

1.4 1.2 1.0 0.8

5.5V

75C
0.8 0.6 0.4 0.2 0

5.0V
0.6 0.4 0.2 0 0 5 10 15 20 IT02865

VGS=4.5V

10

15

20 IT02866

Drain-to-Source Voltage, VDS -- V

Gate-to-Source Voltage, VGS -- V

No.6959-2/4

2SK3491
25

RDS(on) -- VGS
0.1A 0.5A Tc=25C

20

RDS(on) -- Tc
ID=0.5A VGS=10V

Static Drain-to-Source On-State Resistance, RDS(on) --

20

Static Drain-to-Source On-State Resistance, RDS(on) --


10 12 14 16 18 20

18 16 14 12 10 8 6 4 2

15

ID=1.0A

10

0 0 2 4 6 8

0 --50

--25

25

50

75

100

125

150

Gate-to-Source Voltage, VGS -- V


5

IT02867 3

Case Temperature, Tc -- C

IT02868

VGS(off) -- Tc
Forward Transfer Admittance, yfs -- S
VDS=10V ID=1mA

yfs -- ID

VDS=10V

Cutoff Voltage, VGS(off) -- V

1.0 7 5 3 2

Tc=

--25

C 25

C 75

0.1 7 0.1 2 3 5 7 1.0 2 3

0 --50

50

100

150 IT02869

Case Temperature, Tc -- C
10 7 5 3 2

IF -- VSD
VGS=0

Drain Current, ID -- A
1000 7 5

IT02870

SW Time -- ID

VDD=200V VGS=10V

Switching Time, SW Time -- ns

Forward Current, IF -- A

1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4

3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 2 3

tf

5C 25C --25C

td (off)
td(on)
tr

0.001 0.6 0.8 1.0 1.2 1.4 IT02871

Tc=7

1.0

1000 7 5 3 2

Ciss, Coss, Crss -- VDS


f=1MHz

Diode Forward Voltage, VSD -- V

Forward Bias A S O
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

Drain Current, ID -- A

IT02872

IDP=4A

Drain Current, ID -- A

Ciss, Coss, Crss -- pF

Ciss

100 7 5 3 2 10 7 5 3 2 1.0 0 5 10

ID=1A
10

Coss
Crss

DC

10 m 0m s s

10s 10 0 s 1m s

op

era

tio

Operation in this area is limited by RDS(on). Tc=25C Single pulse


2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT02874

15

20

25

30

35 IT02873

0.01 1.0

Drain-to-Source Voltage, VSD -- V

Drain-to-Source Voltage, VDS -- V

No.6959-3/4

2SK3491
1.4

PD -- Ta
Allowable Power Dissipation, PD -- W

30

PD -- Tc

Allowable Power Dissipation, PD -- W

1.2

25

1.0

20

0.8

15

0.6

10

0.4

0.2 0 0 20 40 60 80 100 120 140 160

0 0 20 40 60 80 100 120 140 160

Amibient Temperature, Ta -- C

IT02876

Case Temperature, Tc -- C

IT02875

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice.
PS No.6959-4/4