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Features
20A, 200V rDS(ON) = 0.180 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards
Ordering Information
PART NUMBER IRFP240 PACKAGE TO-247 BRAND IRFP240
Symbol
D
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
DRAIN (FLANGE)
IRFP240 Rev. B
IRFP240
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRFP240 200 200 20 12 80 20 150 1.2 510 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
Electrical Specications
PARAMETER
TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured between the Contact Screw on Header that is Closer to Source and Gate Pins and Center of Die Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S
TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VGS = VDS , ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 11V (Figure 7) VGS = 20V VGS = 10V, ID = 10A (Figures 8, 9) VDS 10V, ID = 11A VDD = 100V, ID 18A, RGS = 9.1 , VGS = 10V, RL = 5.4 MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
LS
12.5
nH
0.83 30
oC/W oC/W
IRFP240 Rev. B
IRFP240
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX 20 80
UNITS A A
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES:
TJ TJ TJ
= 25oC, ISD = 18A, VGS = 0V (Figure 13) = 25oC, ISD = 18A, dISD/dt = 100A/s = 25oC, ISD = 18A, dISD/dt = 100A/s
120 1.3
250 2.6
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 1.9mH, RGS = 50 , peak IAS = 20A.
16
12
0 0 50 100 150 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-2 SINGLE PULSE PDM t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 0.1 1 10
10-3 -5 10
IRFP240 Rev. B
100
18 VGS = 6V
12
103
30 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID , DRAIN CURRENT (A) 24 VGS = 10V VGS = 8V ID , DRAIN CURRENT (A) VGS = 7V
100
10
18
12
VGS = 6V
TJ = 150oC 1
TJ = 25oC
3.0 1.5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 2s DUTY CYCLE = 0.5% MAX rDS(ON) , DRAIN TO SOURCE 1.2 ON RESISTANCE () 2.4
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 10A, VGS = 10V
1.8
1.2
0.6
0 -60
-40
-20
20
40
60
80
NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE GATE VOLTAGE AND DRAIN CURRENT
2002 Fairchild Semiconductor Corporation
IRFP240 Rev. B
1.05
1800
0.95
1200
COSS
0.85
600
CRSS
0.75 -60
-40
-20
20
40
60
80
10
20
50
100
15 ISD , SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX gfs , TRANSCONDUCTANCE (S) 12 TJ = 25oC 9 TJ = 150oC 6
10
TJ = 150oC 1
20 VGS , GATE TO SOURCE VOLTAGE (V) ID = 18A 16 VDS = 40V 12 VDS = 100V VDS = 160V
IRFP240 Rev. B
VDD
0V
IAS 0.01
0 tAV
RG DUT
VDD
10% 90%
10%
VGS 0 10%
50%
VGS
CURRENT REGULATOR
12V BATTERY
0.2F
50k 0.3F
Qgd
D G DUT 0
VDS
IG(REF) 0
IRFP240 Rev. B
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Preliminary
First Production
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Full Production
Obsolete
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Rev. H4
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