Detailed Syllabus

Lecture-wise Breakup
Subject Code Subject Name Credits Faculty (Names) 10B11EC411 Semester Semester EVEN Session 2011 -12 Month from January to June Semiconductor Devices 4 Coordinator(s) Teacher(s) (Alphabetically) Subtitle of the Module Contact Hours Md Jawaid Alam 1 3 Bhawna Gupta Mudassar Meer Topics in the module No. of Lectures for the module 2 Md Jawaid Alam 4

Module No. 1.

Elemental and compound semiconductors

2.

Semiconductor in thermal equilibrium

3.

Current flow in semiconductors, drift , diffusion process & Einstein relation Excess carriers generation & recombination processes and semiconductor device equations. P-N Junction fundamentals P-N Junction diode static & dynamic characteristic

4.

5. 6.

7.

Metal Semiconductor Contacts and Heterojunctions

8. 9.

JFETs , MESFETs

MOS- Filed Effect Transistor

Introduction to the course Elemental semiconductor, III-V compound semiconductors, II-VI compound and other semiconductors, valance bond and energy band model of semiconductors, Direct and Indirect band gap semiconductors Density of state function, Femi Dirac distribution and electron -hole concentrations in non degenerate semiconductors, Distribution of electron and holes in bands, heavily doped semiconductor Drift and diffusion processes, scattering mechanism and mobility, hall effect and Einstein relation Generation of excess electron hole pair, low and high level injections, excess carrier recombination and life time Junction electrostatics, Electric field and potential distribution, varacter diodes I-V characteristics of ideal and real diodes, temperature depends of I-V char, small signal AC and transient behavior Rectifying and non rectifying contacts, schttoky barrier diodes, I-V characteristics, and comparison with pn junction diode Operating Principle and , I-V char., Device parameter and cutoff frequency, Ideal and Real MOS capacitor, types of MOSFETS, I-V char. Devices parameters and cut off frequency, short channel effects and scaling JIIT, Noida

4
2 1 3

4
1 1 1 1

3 3 2

2 1

1
3 1

2
4 5

10

Bipolar Junction Transistor

11

Device fabrication techniques

Structure and parameters, Ebers-Moll model, I-V characteristics, Second order effects, Device parameter , Cutoff Frequency Crystal Growth, Diffusion, Ionimplantation Total number of Lectures 42

5 2

Recommended Reading material:

1. 2. 3. 4.

Ben G.Streetman and Sanjay Banerjee, Solid State Electronics Devices, 5th Ed,PHI, 2001 M.S.Tyagi: Introduction to Semiconductor Materials and Devices, John Wiley, Low Cost edition, 2004 S.M.Sze: Semiconductor Devices :Physics and Technology, , John Wiley, Low Cost edition, 2002 Donald A. Neamen, Semiconductor Physics and Devices, TMH, 2007.

Evaluation Scheme:
Event Mark s

Test 1 Test 2 Test 3 Tutorial Evaluation Attendance

15 25 35 15 10

JIIT, Noida