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Also need convention for when its safe to send another value
synchronous systems, on next clock edge (after hold time) asynchronous systems, acknowledge signal from receiver
Data
Data
Clock Synchronous
Asynchronous
6.375 Spring 2007 L12 Clock and Power 2
Large Systems
Most large ASICs, and systems built with these ASICs, have several synchronous clock domains connected by asynchronous communication channels
Clock domain 1 Clock domain 2 Clock domain 3
Chip A
Asynch. channel
Chip C
Clock domain 5
Clock domain 4
(Can also have latch transparent on clock low, or negative-edge triggered flip-flop)
6.375 Spring 2007 L12 Clock and Power 4
TCQmin/TCQmax
propagation of DQ at clock edge
Tsetup/Thold
define window around rising clock edge during which data must be steady to be sampled correctly either setup or hold time can be negative
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Clock Distribution
Clock Cannot really distribute clock instantaneously with a perfectly regular period
Clock Skew Difference in clock arrival time at two spatially distinct points
B A
Compressed timing path
B Skew
Period A
Period B
Clock Distribution with Clock Grids Low skew but high power
Clock driver tree spans height of chip Internal levels shorted together
6.375 Spring 2007 L12 Clock and Power 11
Clock Distribution with Clock Trees More skew but less power
H-Tree RC-Tree
Recursive pattern to distribute signals uniformly with equal delay over area
Regional Grid
1000 100 10 1
8086 8080 386 Pentium 4 proc
1000W CPU?
[ Source: Intel ]
Power (Watts)
Pentium proc
0.1 1970
1980
1990
2000
2010
2020
Example 1: Cellphone
3 Watt total power limit any more and customers complain Battery life/size/weight are strong product differentiators
During 0 1 transition, energy CVDD2 removed from power supply After transition, 1/2 CVDD2 stored in capacitor, the other 1/2 CVDD2
was dissipated as heat in pullup resistance
Reff
Reff
Diode Leakage
Cg
Reff
Cd
Cg
Reff
Cd
Subthreshold Leakage Short Circuit Current Fast edges keep to <10% of cap charging current Subthreshold Leakage Approaching 10-40% of active power Diode Leakage Gate Leakage Usually negligible Was negligible, increasing due to thin gate oxides
6.375 Spring 2007 L12 Clock and Power 21
Cg
Reff
Cd
Cg
Reff
Cd
Dynamic Power Switching power used to charge up load capacitance Pdynamic = f (1/2) C VDD2 Activity Factor Clock Frequency (transitions/cycle)
Static Power Subthreshold leakage power when transistor is off Pstatic = VDD Ioff
Reduce Frequency
Doesnt save energy, just reduces rate at which it is consumed Lower power means less heat dissipation but must run longer
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Adder
1 0
Adder
Could use transparent latch instead of AND gate to reduce number of transitions, but would be bigger and slower.
6.375 Spring 2007 L12 Clock and Power 27
[ Source: Horowitz ]
+ + + + + +
Vdd
Power Distribution
Reff
Reff
Cg
GND
Reff
Cd
Cg
Reff
Cd
GND
Cg
Reff
Cd
Cg
Reff
Cd
GND
GND
A B
G V G V G V G G G V V G G V G V G
Routed power distribution on two stacked layers of metal (one for VDD, one for GND). OK for lowcost, low-power designs with few layers of metal. Power Grid. Interconnected vertical and horizontal power bars. Common on most high-performance designs. Often well over half of total metal on upper thicker layers used for VDD/GND.
Dedicated VDD/GND planes. Very expensive. Only used on Alpha 21264. Simplified circuit analysis. Dropped on subsequent Alphas.
Power Distribution: ASIC Approach Strapping and rings for standard cells
Power Distribution: ASIC Approach Power rings partition the power problem
Early physical partitioning and prototyping is essential Can use special filler cells to help add decoupling cap
6.375 Spring 2007 L12 Clock and Power 38