PN-Junction

PN-Junction
PN-junction Diode
PN-junction
is formed by growing a single crystal of Si or Ge, which is half P-type and half N-type. Note that a PN-junction diode cannot be made by simply pushing a piece of P-type against another of N-type.
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PN-Junction
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PN-Junction
Unidirectional Property
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PN-Junction
Symbol
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PN-Junction
Formation of Depletion Region
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PN-Junction
Because of diffusion of electrons from N-type into P-type, and of hole from P-type into Ntype, depletion region or space-charge region is formed. This region has extremely high resistance. Electric field is called barrier. Also called barrier potential or contact potential or diffusion potential. V0 = k T ln (NA ND/ni2) Volt V0 = 0.7 V for Si, 0.3 V for Ge
The
barrier discourages the diffusion of majority carriers across the junction. But the same barrier helps the minority carriers to drift across the junction. The minority carriers are constantly generated due to thermal energy. Does it mean that there should be constant current due to the minority carriers crossing the junction ? If yes, how can there be current without any external connection ?
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Ans.: The net current across the junction has to be zero. The majority carrier having high energy still diffuse across the junction. The two currents counterbalance each other.
I dr I dif 0
PN-Junction with Forward Bias
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Applied voltage opposes the contact potential. Net barrier potential VB is reduced. Diffusion current increases. Drift current slightly decreases. The forward basing current is
I f I dif I dr
PN-Junction with Reverse Bias
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VB increase.
Idif
due to majority carriers reduces to almost zero. Idr slightly increases. The net current Ir remains constant till breakdown, hence called saturation current Is .
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PN-Junction
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Summary of Biasing Conditions
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PN-Junction
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Reverse Breakdown
At some high reverse voltage, called breakdown voltage (VZ), the current abruptly increases. Two phenomena :
Zener Breakdown. 2. Avalanche Breakdown.
1.
Zener is predominant for VZ less than 4 V. Avalanche is predominant for VZ greater than 4 V.
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Zener Breakdown
The field across depletion region becomes so high (about 107 V/m) that large number of covalent bonds break. Hence large current starts flowing.
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Avalanche Breakdown
Increased field causes large increase in the velocities of minority carriers. These carriers cause impact ionization. Cumulative multiplication of charge carriers occur.
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Junction Capacitances
Two kinds :
1.
2.
Transition or Depletion Capacitance, CT : This is predominant in reverse bias. It decreases with applied voltage. Storage or Diffusion Capacitance, CD : This is predominant in forward bias. Of the order of several hundred pF.
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V-I Characteristics
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Diode Characteristics
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VT
is cut-in, knee, offset, turn-on, or threshold voltage. Is is reverse saturation current.
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Si Diode versus Ge Diode
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Temperature Effects
Is almost
doubles for every 10 C rise in temperature. VZ increases with temperature. The width of the depletion layer decrease and hence barrier potential decreases with rise in temperature. As a result, VT decreases by 2mV for each celsius degree rise in temperature.
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DIODE RESISTANCE
Two kinds :
1.
2.
Static or DC Resistance (High Value) : It is the resistance offered by the diode to a dc current. Dynamic or AC Resistance (Low Value) : It is the resistance offered by the diode to ac current.
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Static or DC Resistance
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Dynamic or AC Resistance
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Diode Equation
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Dynamic Resistance of a Diode
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Ideal Diode
Ideally, a diode should have RF = 0 and RR = Draw the V-I characteristics of an ideal diode.
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Ideal Diode Characteristics
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Circuit Model of a Diode
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Simplified Circuit Model
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PN-Junction

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PN-Junction

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PN-Junction

Formation of Depletion Region

PN-Junction with Forward Bias

PN-Junction with Reverse Bias

Summary of Biasing Conditions

is cut-in, knee, offset, turn-on, or threshold voltage. Is is reverse saturation current.

Si Diode versus Ge Diode

Dynamic Resistance of a Diode

Ideal Diode Characteristics

Circuit Model of a Diode

Simplified Circuit Model

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