Index

Forward Biased P-N Junction

Forward biasing the p-n junction drives holes to the junction from the p-type material and electrons to the junction from the n-type material. At the junction the electrons and holes combine so that a continuous current can be maintained.

Semiconductor concepts Semiconductors for electronics

Show energy bands.

Compare to reverse bias.

Index

Reverse Biased P-N Junction

The application of a reverse voltage to the p-n junction will cause a transient current to flow as both electrons and holes are pulled away from the junction. When the potential formed by the widened depletion layer equals the applied voltage, the current will cease except for the small thermal current

Semiconductor concepts Semiconductors for electronics

Show energy bands.

Compare to forward bias.

Index

The P-N Junction Diode

The nature of the p-n junction is that it will conduct current in the forward direction but not in the reverse direction. It is therefore a basic tool for rectification in the building of DC power supplies.

Semiconductor concepts Semiconductors for electronics

Diode varieties PIN diode Step-recovery diode Diode applications

Index Semiconductor concepts Semiconductor s for electronics

The PIN Diode

The PIN diode has heavily doped p-type and n-type regions separated by an intrinsic region. When reverse biased, it acts like an almost constant capacitance and when forward biased it behaves as a variable resistor.

The forward resistance of the intrinsic region decreases with increasing current. Since its forward resistance can be changed by varying the bias, it can be used as a modulating device for AC signals. It is used in microwave switching applications.

Index

Step-Recovery Diode
Semiconductor concepts Semiconductor s for electronics

In the step-recovery diode the doping level is gradually decreased as the junction is approached. This reduces the switching time since the smaller amount of stored charge near the junction can be released more rapidly when changing from forward to reverse bias.

The forward current can also be established more rapidly than in the ordinary junction diode. This diode is used in fast switching applications.

Diode

The ideal diode: (a) diode circuit symbol; (b) i-v characteristic; (c) equivalent circuit in the reverse direction; (d) equivalent circuit in the forward direction.

Diode Circuits

During positive cycle, diode allow current to pass through and output voltage is positive

(a) Rectifier circuit. (b) Input waveform. (c) Equivalent circuit when (d) Equivalent circuit when v1 > 0 (e) Output waveform.

Diode Characterization

Diodes have a nonlinear response to voltage We model different regions of operation Forward Bias Reverse Bias Breakdown

i = I s e v / nVT 1

i = I s e v / nVT 1

i I s

The i-v characteristic of a silicon junction diode.

Forward-Bias Region

Terminal voltage v is positive

i = I s (e v / nVT 1)

VT =

kT q

1.38 x10 23 k=Boltzmanns constant= T=absolute temparature in K=273+ Celcius q=magnitude of electronic charge= 1.6 x10 19 C 1<n<2, depending on material, assume n=1 i i I S e v / nVT v = nVT ln IS EXAMPLE: Diode with n=1 displays forward voltage I S Find of 0.7V at 1mA. v / nV I S = ie v / nV SOLUTION: i = I S e I S = 10 3 e 700 / 25 = 6.9 x10 16 A 10 15 A For n=1: For n=2: I S = 10 3 e 700 / 50 = 8.3x10 10 A 10 9 A
T T

Reverse-Bias Region

Terminal voltage v is negative

i I s
v is negative and a few times larger than V
T

Current in the reverse direction is constant and equal IS and called saturation current. Typically, real life diodes exhibit much larger reverse currents 14 15

I S = 10

10

Break Down Region

Knee of diode I-v characteristic, the voltage is less than Zener voltage.

Diode Zener

Diode Zener Characterization

Equivalent Diode Zener

Diode Model
As a resistor with value equal to reciprocal of the slope of the i-v curve Linearization around bias point VD and v D /( nVT ) time varying signal vd(t) is ID = ISe superimposed. vD (t ) = VD + vd (t ) iD (t ) = I S e (VD + vd (t ) /( nVT ) Current due to VD:

Approx.

vd v << 1 I D (t ) = I D (1 + d ) nVT nVT

Small Signal Approximation

Equivalent circuit model

For small changes around bias point Q is reciprocal of tangent :

iD rd = 1 / v D iD = I D

VD0 is the intercept of the tangent on the vD axis

1 iD = (v D v D 0 ) rD

Separate DC and small signal analysis

Basic Limiting Ckts