A A Technical Seminar Presentation On

OVONIC UNIFIED MEMORY

Submitted By: Maleeha Tabassum 12U81D5706

Department of Electronics & Communication Engineering Sarada Institute Of Technology And Science RaghunadhaPalem, Khammam 507002

CONTENTS
Introduction

Emerging Memory Technologies

Ovonic Unified Memory OUM Architecture Advantages Conclusion

INTRODUCTION:
Semiconductor memory is an electronic data storage device.

Implemented on a semiconductor-based integrated circuit.

Semiconductor memory has the property of random access, which means that it takes the same amount of time to access

any memory location.

In a semiconductor memory chip, each bit of binary data is stored in a tiny circuit called a memory cell consisting of one to several transistors.

RECENT ADVANCED MEMORY TECHNOLOGIES

Magneto resistive RAM(MRAM) Resistive RAM (RRAM) Phase- Change RAM(PCRAM)

ABOUT CHALCOGENIDE ALLOY

Its a ternary system It consists of gallium, antimony & tellurium chemically called ge2sb2te5

STRUCTURE & ELECTRIC PROPERTY OF PHASE CHANGE MATERIALS

OVONIC UNIFIED MEMORY

OUM IS A NON VOLATILE MEMORY TECHNOLOGY WITH:

High speed
Low power

Reduced cost
High endurance

Merged memory / simplified logic

OUM Technology Concept

Amorphous Vs Crystalline

Short Range Atomic Order Low Free Electron Density High Activation Energy High Resistivity

Long Range Atomic Order High Free Electron Density Low Activation Energy Low Resistivity

MEMORY STRUCTURE

READING & WRITING DATA

TO WRITE DATA Chalcogenide is heated above its melting point to reset state[high resistance] Heated below its melting point for 50ns to set state[low resistance]

TO READ DATA Reading is done by simply measuring the resistance change. High resistance = set state Low resistance = reset state

PROGRAMMING
The OUM cell is programmed by application of a current pulse at a voltage above the Switching threshold The programming pulse drives the memory cell into a high or low resistance state, depending on magnitude of the pulse voltage.

Information stored in the cell is read out by measurement of the cells resistance
OUM devices are programmed by electrically altering the structure(amorphous or crystalline) of the small volume of chalcogenide alloy.

BASIC DEVICE OPERATION

V--I CHARACTERISTICSI CHARACTERISTICS

ADVANTAGES
Readwrite performance

High Speed
Endurance Low programming energy Process simplicity Cost CMOS embed ability Scalability

CONCLUSION
Non volatile OUM with fast read and write speeds, high endurance, low voltage/low energy operation, ease of integration and competitive cost structure is suitable for ultra high density ,stand alone and embedded memory applications. These attributes make OUM an attractive alternative to flash memory technology and potentially competitive with volatile memory technologies.

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