Introduction to RF Energy

Electromagnetic Radiation:
Hans Christian Oerstead (1819)
demonstrated a link between electricity and magnetism
he noticed that a magnetic compass needle could be
deflected by placing it near a wire with electric current
running through it
developed left-hand rule

James Clerk Maxwell (1850)

showed that electrical fields and magnetic fields can
couple together to form electromagnetic waves
once created, an electromagnetic wave will continue
forever until it is absorbed by matter

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

Introduction to RF Energy
Electromagnetic Radiation:
Electromagnetic waves:
Energy radiating from vibrating charged particles (i.e. electrons).
Requires no matter to propagate (compare to sound waves).
Changing electric field <==> Changing magnetic field (coupling)

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

Introduction to RF Energy
Electromagnetic Waves:
Wavelength/ Frequency and the velocity of the wave are related by:
f = v
= wavelength (meters)
f = frequency (hertz or cycles/second)
v = velocity (meters/second)
For an electromagnetic wave, v is replaced by c (the speed of light):
c = 2.9979 x 108 meters/second (in a vacuum)
c = 2.9391 x 108 meters/second (in air)
c = 2.2490 x 108 meters/second (in water)
etc.

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

Introduction to RF Energy
The Electromagnetic Spectrum:

Logarithmic scale of electromagnetic waves ordered by frequency or wavelength.

Infinitely long at both
ends (in theory).
In practice, ranges from:
Long Waves
104 m, 300 Hz to
Gamma Rays
10-14 m, 1021 Hz
This is 18 orders of
magnitude!

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

Introduction to RF Energy
Radio Waves:
Heinrich Hertz (1880)
proved the existence of radio waves
demonstrated that radio waves travel at the speed of light
also demonstrated that radio waves can travel freely through
the air

Characteristics of Radio Waves:

lowest frequencies in the electromagnetic spectrum

produced by electrons oscillating in an antenna
also produced by stars, sparks, and lightning
used mainly for communications

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

Introduction to RF Energy

Radio Waves:
Bands:

Long Wave (LF): ~ 12 km, specialized radio

applications
Medium Wave (HF): ~
100m, AM radio
VHF (Very High
Frequency): ~ 2m, FM
radio, commercial
aircraft
UHF (Ultra High
Frequency): < 1m,
police radio, military,
television

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

Introduction to RF Energy
RF Power (or RF Energy):
RF Power: AC electrical power at radio frequencies
RF Power is NOT electromagnetic radiation
Radio Waves: Electromagnetic waves at radio
frequencies
Radio waves are created (radiated) when RF
power travels through an unshielded conductor
(antenna)

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

Introduction to RF Energy
Non-Semiconductor Applications of RF Power:
Heating and Curing via Induction Heating:
electrically conducting materials (usually metals) are heated by a
non-contact method in an alternating magnetic field
varying magnetic field induces an electric current inside the
component just like a transformer
only the object is heated
more efficient and consistent than radiative or resistive heating

Applications for Induction Heating:

heat treatment of metals

heating prior to deformation (i.e. forging)
brazing and soldering
shrink fitting (motor rotors to shafts)

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

Introduction to RF Energy
Non-Semiconductor Applications of RF Power:
Drying of Synthetic and Natural Fibers:
water in the product conducts RF-induced current until the
product is dry
product is not damaged due to over-drying

Lumber Treatment:
Radio Frequency Vacuum (RFV) Drying places wood between two
large RF electrodes.
Bipolar nature of water molecules means that they rotate
quickly in response to the changing electric field.
Friction from moving water molecules creates steam that
permeates out of the wood. Dries from the inside out.
Reduced drying time, more efficient, higher quality.

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

RF Plasma
DC Power is rarely used for industrial plasma
generation.
Why use RF Power?
1. Allows the Usage of Insulating Electrodes:
In deposition and etching systems, the electrodes are
coated with an insulating material.
This reduces particulates in the chamber, and makes
them easier to clean.
The one-way nature of DC plasmas causes a charge to build
up on the electrodes and extinguish the plasma.
In an AC (RF) system, there is no net current flow to either
electrode, so there is no charge buildup.

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

RF Plasma
Why use RF Power?
2. Improved Power Coupling:
RF current creates electromagnetic waves inside the plasma chamber.
These electromagnetic waves couple energy into the plasma much
more efficiently than DC does.

3. RF Plasmas are Easier to Strike:

Gasses in an RF plasma ionize more efficiently than in DC plasmas =>
more ions for the same amount of power.
RF plasmas can be sustained at lower gas pressures than DC plasmas.

4. Reduced Ion Bombardment:

Ion bombardment in DC plasmas can damage the wafer.
A properly biased RF plasma can reduce or eliminate ion bombardment.

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

RF Plasma
RF Plasma Frequency:
Federal Communications Commission assigns
frequency bands for various uses.
RF plasma generation falls under ISM band (Industrial,
Scientific, Medical).

The most widely used frequency for industrial

plasma generation is 13.56 MHz (13.56 x 106
cycles/second).
Originally selected to reduce interference of higher-order
harmonics with other bands.
Other frequencies used include: 55 kHz, 100 kHz, 455 kHz, and
2.45 GHz (microwave plasma).

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

RF Plasma
RF Plasma:
Why RADIO frequency?
The Breakdown Voltage (voltage at which a gas ionizes) is
a function of:
the ionization potential of the gas
the mean free path
the frequency of the applied RF power
most gasses ionize more efficiently at radio
frequencies
At lower frequencies, the behavior is more like a DC plasma.
Non-conducting electrodes quickly charge up.
At higher frequencies, the (relatively) heavy ions are not mobile.

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

RF Plasma
Self-DC Bias:
A pure AC signal (with no DC bias) injected into a plasma can create a plasma
voltage with both AC and DC components.
This is called Self-DC bias.
Self-DC Bias is created
because:
At RF frequencies, the
lighter electrons respond
much faster than do the
heavier ions.
Electrodes of unequal
area (usually the case)
cause a greater flow of
electrons in one direction
than the other.

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak

RF Plasma
Self-DC Bias:
increases as the 4th power of the relative areas of the electrodes!
Self-DC Bias will be shorted out:
If conducting electrodes and no blocking capacitor are used.
OR If the electrodes are of equal area.
Self-DC Bias will exist if:
A blocking capacitor is inserted in series with the electrodes, or
Non-conducting electrodes are used.

Spring 2004

VDC _ Bias V1 V2

Semitec 215
Plasma and RF Energy

V1 AREA2

V2 AREA1

Jozwiak

RF Plasma
Desirable Self-DC Bias:
Sputtering and Reactive Ion Etching (directional processes).
There is a net flow of ions towards the smaller of the two electrodes:
the target in the case of sputtering, or
the wafer in the case of RIE.
A blocking capacitor is used, and the electrodes are designed for the
desired amount of DC bias.

Undesirable Self-DC Bias:

PECVD and Plasma Etching (chemical processes).
Self-DC bias may result in an undesired level of ion bombardment on
the wafer.
Self-DC bias must be reduced or eliminated.
The blocking capacitor is removed, and the electrodes are designed as
symmetrical (equal area) as possible.

Spring 2004

Semitec 215
Plasma and RF Energy

Jozwiak