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Practices
Ions Scattering
Spectroscopy (ISS)
Norfarhana Abdul Samad
Nur Khairul Nabila
Kamarudin
Mohd Razali Shamsuddin
Serawati Jafirin
Siti Zarina Zakwan
P59341
P59342
P61352
P62181
P62981
General
Principles
m1 m2
4m1m2 cos 2 2
E 2 E0
(m1 m2 ) 2
m
2
1
E1 E0
E
1
0
m m
m2 m1
2
1
180:
90:
Shadowing and
blocking
An additional phenomenon of 3
shadowing is the blocking. A
blocking cone is formed behind
blocking atoms.
Channeling
When an ion beam is aligned along a high
symmetry of a single crystal, most of the ions can
penetrate deep into the crystal (thousands of ).
This is due to the fact that the shadow cones are
small for high energetic and light ions (e.g. 1MeV
He+).
During their way through the crystal electronic
interaction leads to a continuous energy loss:
electronic stopping power. For 1 MeV He+ in Si it
is Sputtering
about 60 eV per monolayer.
Impinging ions may produce a number of
recoiling atoms and in form of a cascade process
some sample atoms may be ejected from the
surfaces: sputtering
Sputter yield
The number of sputtered atoms
per impinging ions depends on the
primary energy, the mass of the
ions and the target atoms and the
angle of incidence.
The maximum yield is at about 30
keV.
At higher energies ion implantation
is prevalent.
The sputter yield also increases
The application
with increasing
angle of sputtering is manifold:
a) Detection and identification of ions in the SIMS
technique
b) Combined sputtering and surface analysis by AES or XPS
for depth profiling
c) Sputtering for thin film production
d) Sputtering for surface etching
Ion Scattering
Spectroscopies
LEIS
Medium
High
HEIS
Low-energy ion
scattering (LEIS)
Instrumentation
MEISInstrumentation
POSCHENRIEDER ELECTROSTATIC
DEFLECTOR
COLLIMATOR
ACCELERATION
X-Y STEERER
TUBE
CHOPPING
BENDING
ELECTRODE
MAGNET
Q-LENS
CHOPPING
EINZEL LENS
(a)
APERTURE
(b)
X-Y
PULSE
GENERATOR
(d)
STEERER
DUOPLASMATRON
(c)
MCP
ION SOURCE
SAMPLE
SCATTERED-ION
DECELERATION TUBE
DELAY
TIME
AMPLIFIER
CFD
DELAY
ANALYZER
RBSINSTRUMENTATION
ISS Application
Coatings LEIS can be used to:
Detection and quantification of pinholes
Root cause analysis of adhesion failure
Quantification of initial growth
Cleaning
Surface modification
Example:
Detection of bad wetting of coated
surface
With
ISS Application
Oxygen membranes and Solid Oxide Fuel Cells (SOFC)
The
YSZ after
calcination
ADVANTAGES
Non-destructive depth profiling
DISADVANTAGE
S
Large
APPLICATI
ONS
ideal use for:
Crystallographic analysis of thin films
Crystal damage/defect profiling
Determining percent amorphization
Determining thickness of amorphous layers
Relevant industries
Defense
Semiconductor
Telecommunications