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ntrolled switch:
1
Bilateral
CURRENT DIRECTIONS:
Unidirectional : Diode, SCR, IGBT, BJT, GTO, MCT
Bidirectional: MOSFET, RCT, TRIAC
VOLTAGE CAPABILITY:
Forward voltage blocking
Reverse blocking (Power diode)
Both forward and reverse blocking (SCR)
IDEAL switch
Characteristics:
1. Controllable: able to turn ON or OFF at will. We prefer voltage control
over current control
2. Voltage blocking: blocks large voltages when OFF. Forward AND Reverse.
3. Current conduction: Conduct large currents when ON. Forward AND
Reverse.
4. Fast Speed: Switch from ON to OFF or back quickly (instantly preferred).
5. Negligible losses: conduction losses and switching losses are negligible
6. Power for control source is negligible. Voltage control does this far better
than current control.
7. Negligible deviation from true ON or OFF behaviour
a. Leakage current in the OFF state is negligible b. Forward voltage in the
ON state is negligible
8. Positive temperature coefficient (Resistance rises the temperature rise).
This situation tends to contribute to circuit stability.
9. Large di/dt and dv/dt ratings. Helps speed!
Introduction
Power
semiconductor
devices
represent the heart of modern
power electronics, with two major
desirable characteristics guiding
their development:
Switching speed (turn-on and turn-off
times)
Power-handling capabilities (voltageblocking
and
current-carrying
capabilities)
Example 1
(b
)
(c)
(d
)
Fig 2.1 (a) Voltage divider (b) Zener
regulator (c) Transistor regulator (d)
Switching circuit
(e
)
(f)
Fig 2.1 (e) Zener diode i-v switching characteristics (f) Switching
waveforms for circuits
% 50%
RL R
TheefficiencyissimplyVo/Vin%.Astheoutputvoltagebecomessmaller,theefficiency
decreasesproportionally.
Zenerdcregulator:
Sincethedesiredoutputis12V,weselectazenerdiodewithzenerbreakdownVZ=12V
isselected.AssumethezenerdiodehastheivcharacteristicshowninFig.2.1(e).Since
RL=6 ,theloadcurrent,IL,is2A.CalculateRforIZ=0.2A(10%oftheloadcurrent),
resultsinR=5.45.SincetheinputpowerisPin=2.2Ax24V=52.8Wandtheoutput
powerisPout=24W,theefficiencyofthecircuitis:
24W
%
52.8W
=
45.5 %
Transistordcregulator:
ItisclearfromFig.2.1(c)thatforVo=12V,thecollectoremittervoltagemustbe
around12V.Thecontrolcircuitmustprovideabasecurrent,IB,toputthetransistorin
theactivemodewithVCE12V.Sincetheloadcurrentis2A,thecollectorcurrentis
approximately2A(assumesmallIB).Thetotalpowerdissipatedinthetransistorcanbe
approximatedbythefollowingequation:
V I 12 X 2 24 watts
CE C
Theefficiencyofthecircuitis50%.
Switchingdcregulator:
ConsidertheswitchingcircuitofFig.2.1(d)byassumingtheswitchisidealand
periodicallyturnsonandoff,asshowninFig.2.1(f).Theoutputvoltagewaveformis
alsoshowninFig.2.1(f).Eventhoughtheoutputvoltageisnotconstantorpuredc,its
1 TD
averagevalueisgivenby
V dt V D
V
o ,ave
in
in
T
0
whereDisthedutyratio,theratiooftheontimetotheswitchingperiod,Ts.ForVo,ave=
12V,setD=0.5,i.e.,theswitchhasadutycycleof0.5or50%.Inthiscase,theaverage
outputpoweris48Wandtheaverageinputpowerisalso48W,resultingin100%
efficiency
Switching Characteristics
The Ideal Switch
(a)
(b)
Example 2
Consider a linear approximation of Fig
2.3(a) as shown in Fig 2.4(a) with D = 1
(this assumes that Ts is the on time)
Give a possible circuit implementation using a
power switch whose switching waveforms are
as shown in Fig 2.4(a)
Derive the expressions for the instantaneous
switching and conduction power losses and
sketch them
Determine the total average power dissipated
in the circuit during one switching period
Find the maximum power
(a)
(b)
(c)
t I ON I OFF I OFF
ON
i sw (t ) I ON
t T
s
I ON I OFF I OFF
t OFF
VOFF VON
t t ON VON
t ON
v sw (t ) VON
V V
ON
OFF
t (Ts t OFF ) VON
t OFF
0 t t ON
t ON t Ts t OFF
Ts t OFF t Ts
0 t t ON
t ON t Ts t OFF
Ts t OFF t Ts
VOFF I ON
t tON t
2
tON
p(t ) VON I ON
V I
OFF2 ON t (Ts tOFF ) t Ts
tOFF
0 t tON
tON t Ts tOFF
Ts tOFF t Ts
Ts
Ts
1
p(t ) dt
Ts
Ts
t ON
VOFF I ON
2
t OFF
Ts t OFF
VOFF I ON
2
t ON
(t t ON )t dt
Ts t OFF
ON
I ON dt
t ON
VOFF I ON
Ts
t ON t OFF VON I ON
(Ts t OFF t ON )
6
Ts
0
t tmax
Voff I on
4
(a)
Example 3
Giventhatvs(t)isatriangularwaveform,assumetheswitchisideal
andinitiallyoff.Controlworksinsuchawaythatittogglesevery
timevs(t)crosseszero.UseVp=12V,R=10 andT=1ms.
a) Sketch the waveforms for is and vo
b) Calculate the average and rms values for the output
voltage
c) Calculate the average input power, average output
power, and efficiency
d) Repeat parts (a)-(c) by assuming T = 1 s
e) Repeat parts (a)-(d) by assuming the switch has 1 V
voltage drop was closed
V
1
1 1T
V0 v 0 (t )dt (
V P ) P 3V
T 0
T 22
4
Vp
6
4.9V
1
Pin is (t )vs (t )dt 2.4W
T 0
1
Pout i0 (t )v0 (t )dt 2.4W
T 0
Efficiency:
Pout Pin 100%
V0, ave
T /4
3T / 4
4V p
t V p 1 dt
t 3V p 1 dt
T
T
T /2
4V p
T /2
1
(V p 2) 2.5V
4
1
Vo2 (t ) dt 4.3V
T 0
V0,rms
1
Pin is (t ) vs (t ) dt
T 0
2
1 2V p
1 2.375W
4 R 3
1
Pout io (t ) vo (t ) dt
T 0
1
V p 1 3 1 1.85W
6 RV p
Resulting in efficiency of
Pout
1.85
* 100%
* 100% 77.9%
Pin
2.375
Types of Switches
Table 2.1 Types of Semiconductor Switches, their
Controllability Features, and their Possible Switch
Implementations.
(a)
(b)
(c)
Fig 2.8 Symbol and Practical and Ideal i-v characteristic curves
(a)
(b)
Example 2.4
Derive the expression for IRR and
the peak switch current in terms of
the diode reverse recovery time for
Fig. 2.10.
V
in ( t t )
0
L
t tt
0
I o Ls
Vin
Vin
t rr
Ls
s , peak
V
in t
I
0
L rr
s
(a)
(b)
(c)
(a)
(b)
(a)
(b)
(c)
(d)
(a)
(b)
On-State
Resistance
MOSFETS have on-state resistance, RDS (sw), that cause
power dissipation as:
(a)
(b)
Internal Capacitors
(a)
(b)
Regions of Operation
For vGS > VTh, the device can be either in the
triode region, called "constant resistance" region,
or in the saturation region, depending on the
value of vDS. For a given vGS, with a small vDS (vDS
< vGS - VTh) the device operates in the triode
region (saturation region in the BJT), and with a
large vDS (vDS > vGS - VTh), the device enters the
saturation region (active region in the BJT).
For vGS < VTh, the device turns off, with the drain
current almost equal to zero. Under both regions
of operation, the gate current is almost zero.
MOSFET is known as a voltage-driven device and,
therefore, requires a simple gate control circuit.
i D K [2(v GS VTh )v DS v DS ]
i D K (v GS VTh ) 2
Triode Region
Saturation Region
K 12 n C OX
where
n : electron mobility
COX : oxide capacitance per unit area
L : Length of the channel
W : Width of the channel
k (vGS VTh )
Input Capacitance
gs
gd
Thyristor-Based Devices
The Silicon-Controlled Rectifier
Symbol and i-v characteristics for the SCR
(b)
(c)
Triode ac
Like the GTO, the triode ac (triac) switching device was
introduced immediately after the SCR
The Diac
Is essentially a gateless triac constructed to break down at
low forward and reverse voltages
(a)
(b)
(c)
(a)
(b)
The MOS-Controlled
Thyristor
Simplified equivalent circuit model and the
schematic symbol for a p-type MOS-controlled
thyristor (MCT)
(a)
(b)
(c)
(d)
Comparison of Power
Devices
Snubber Circuits
(a)
(b)