WELCOME TO

VLSI Circuit Design

Short Profile
TAFSIR AHMED KHAN
LECTURER, EETE, DIU
E-MAIL: shimul10175673@gmail.com
RESEARCH INTEREST: OPTO & MICRO-electronic Devices, Digital
Circuit and IC Design, Modeling; Biomedical engineering; Ultra Low
Power Circuits; Sensors, Image processing.

Course Contents, Evaluation

Procedure and Text Books

EVALUATION
MID Term exam
20%
Class test/quiz 20%
Attendance and assignments
10%
FINAL Term exam
50%
Total 100%
Quizes:
3 x Quizes (Mid 2- Final 1)20*3=60 marks
(Average of all quizzes will be considered)
TEXT BOOKS:
CMOS VLSI Design- A Circuits and Systems Perspective, Neil H.E. Weste &
David Harris, 3rd Edition.
Principles of CMOS VLSI Design- A Systems Perspective, Neil H.E. Weste &
Kamran Eshraghian, 2nd Edtion, Addison-Wesley Limited.

IC Products

Processors

Memory chips

PLA, FPGA

Embedded systems

Mobile communication,
audio/video processing

Programmable

RAM, ROM, EEPROM

Analog

CPU, DSP, Controllers

Used in cars, factories

Network cards

System-on-chip (SoC)
Images: amazon.com

VLSI:Very Large Scale Integration

Integration:

Integrated Circuits

multiple devices on one substrate

How

large is Very Large?

SSI

(small scale integration) Transistors<10 (!)

MSI (Medium scale integration) 10<Transistors<1000(!)
LSI (Large scale integration) 1000<Transistors<100000(!)
VLSI (Very large scale integration)
100000<Transistors<10000000
ULSI/SLSI (Super Large Scale Integration)
10000000<Transistors

The First Computer

The Babbage
Difference Engine
(1832)
25,000 parts
cost: 17,470

ENIAC - The first electronic computer (1946)

ASIC ( application-specific integrated circuit) with mixture

of full custom,RAM and standard cells
Single port RAM

Dual port RAM

Full custom

Standard cell

FIFO

Pentium

VLSI Trends: Moores Law

In

1965, Gordon Moore predicted that

transistors would continue to shrink, allowing:

Doubled transistor density every 18-24 months

Doubled performance every 18-24 months

History

has proven Moore right

But, is the end is in sight?

Physical limitations
Economic limitations
Gordon Moore
Intel Co-Founder and Chairmain Emeritus
10
Image source: Intel Corporation www.intel.com

Moores Law (cont)

Intel

co-founder Gorden Moore notice in 1964

Number of transistors doubled every 12 months
while price unchanged
Slowed down in the 1980s to every 18 months
Amazingly still correct, likely to keep until 2010.

Moores Law, Intels Version

Transistors

Pentium III

10M
80486

1M

80386

100K
10K
1K

Pentium

8086
4040

80286

8080

1975

1980

1985

1990

1995

2000

IC Scales
Integration level
Small Scale Integration
Medium Scale Integration
Large Scale Integration
Very Large Scale Integration
Ultra Large Scale Integration
Super Large Scale Integration

Abbreviation

Number of devices on a chip

SSI

2 to 50

MSI
LSI
VLSI
ULSI
SLSI

50 to 5,000
5,000 to 100,000
100,000 to 10,000,000
10,000,000 to 1,000,000,000
over 1,000,000,000

International Technology Roadmap

for Semiconductors (ITRS)

Progress of miniaturization and comparison of sizes of

semiconductor manufacturing process nodes with some
microscopic objects and visible light wavelengths

International Technology Roadmap

for Semiconductors (ITRS)
Minimum feature size (m)
DRAM
Bits/chip
Cost/bits @ volume
(millicents)
Microprocessor
Transistors/cm2
Cost/Transistor @ volume
(millicents)
ASIC
Transistors/cm2
Cost/Transistor @ volume
(millicents)
Wafer size (mm)

1995
0.35

1997
0.25

1999
0.18

2001
0.13

2004
0.10

2007
0.07

64 M

256 M

1G

4G

16 G

64 G

0.017

0.007

0.003

0.001

0.0005

0.0002

4M

7M

13 M

25 M

50 M

90 M

0.5

0.2

0.1

0.05

0.02

2M

4M

7M

13 M

25 M

40 M

0.3
200

0.1
200

0.05
200 300

0.03
300

0.02
300

0.01
300
400 (?)

Julius Edgar Lilienfeld

(April 18, 1882 August 28, 1963)

Julius Edgar Lilienfeld was an
Austro-Hungarian physicist. He was
born in Lemberg in Austria-Hungary
(now called Lviv in Ukraine), moved
to the United States in the early
1920s, originally in order to defend
patents he possessed, and then
made a scientific/industrial career
there. He invented an "FET-like"
transistor and the electrolytic
capacitor in the 1920s.

He filed several patents describing the construction and

operation of transistors as well as many features of
modern transistors.
(US patent #1,745,175 for an FET-like transistor was
granted January 28, 1930.) When Brattain, Bardeen,
and Robert Gibney tried to get patents on their earliest
devices, most of their claims were rejected due to the
Lilienfeld patents. The optical radiation emitted when
electrons are hitting a metal surface is named "Lilienfeld
radiation" after he first discovered it close to X-ray tube
anodes. Its origin is attributed to the excitation of
plasmons in the metal surface.
The American Physical Society has named one of its
major prizes after Lilienfeld.

Brief History

FET-like" transistor by Julius Edgar Lilienfeld, 1920

First Transistor, AT&T Bell Lab, 1947 (William
Shockley, John Bardeen and Walter Brattain) (Ge)
First Single Crystal Germanium, 1950
First Single Crystal Silicon, 1952
First IC device, TI, 1958 (Jack Kilby)
First IC product, Fairchild Camera, 1961(Robert
Noyce)

First Transistor, Bell Lab, 1947

Photo courtesy:
AT&T Archive

First Transistor and Its Inventors

John Bardeen, William Shockley and Walter Brattain

Photo courtesy: Lucent Technologies Inc.

First IC Device Made by Jack Kilby of Texas

Instrument in 1958

Photo courtesy: Texas Instruments

First Silicon IC Chip Made by Robert

Noyce of Fairchild Camera in 1961

Photo courtesy: Fairchild Semiconductor International

MOSFET

~10nm
2000

Texas
Instruments

2015

Vin

IC Design:
CMOS Inverter

(a)

Vdd

NMOS

Vss

PMOS
Vout

Shallow trench isolation (STI)

N-channel active region
N-channel Vt
N-channel LDD
N-channel S/D

P-channel active region

P-channel Vt
P-channel LDD
P-channel S/D

(b)
P-well

Polycide gate and local

interconnection

Metal 1

Contact

N-well

Metal 1, AlCu
W
n+

PMD
n+

STI

P-Well

p+
N-Well

P-Epi
P-Wafer

p+

(c)