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Transistor Modeling

ENGI 242
ELEC 222

January2004

ENGI242/ELEC222

Hybrid Equivalent Circuit for BJT

V1
I2
January2004

h11 h12

I1

h21 h22

V2

ENGI242/ELEC222

h-parameter Model for Common Emitter

Parameters from the spec sheet (x = lead based on circuit configuration):


h11 = hix
h12 = hrx
h21 = hfx
h22 = hox
hrx and hfx are dimensionless ratios
hix is an impedance <>
hox is an admittance <S>

January2004

ENGI242/ELEC222

Short Circuit Input Impedance

January2004

ENGI242/ELEC222

Open Circuit Reverse Transfer Ratio

January2004

ENGI242/ELEC222

Short Circuit Forward Transfer Ratio

January2004

ENGI242/ELEC222

Open Circuit Output Admittance

January2004

ENGI242/ELEC222

Transistor Modeling
Hybrid Model Pi
ENGI 242
ELEC 222

HYBRID MODEL PI

January2004

ENGI242/ELEC222

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HYBRID MODEL PI PARAMETERS


Parasitic Resistances
rb = rbb = ohmic resistance voltage drop in base region
caused by transverse flow of majority carriers, 50 rb
500
rc = rce = collector emitter resistance change in Ic due to
change in Vc, 20 rc 500
rex = emitter lead resistance
important if IC very large, 1 rex 3

January2004

ENGI242/ELEC222

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HYBRID MODEL PI PARAMETERS


Parasitic Capacitances
Cje0 = Base-emitter junction (depletion layer) capacitance,
0.1pF Cje0 1pF
C0 = Base-collector junction capacitance, 0.2pF C0
1pF
Ccs0 = Collector-substrate capacitance, 1pF Ccs0 3pF
Cje = 2Cje0 (typical)
0 =.55V (typical)
F = Forward transit time of minority carriers, average of
lifetime of holes and electrons, 0ps F 530ps

January2004

ENGI242/ELEC222

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HYBRID MODEL PI PARAMETERS


r = rbe = dynamic emitter resistance magnitude varies to
give correct low frequency value of Vbe for Ib
r = rbc = collector base resistance accounts for change
in recombination component of Ib due to change in Vc
which causes a change in base storage
c = Cbe = dynamic emitter capacitance due to Vbe
stored charge
c = Cbc = collector base transistion capacitance (CTC)
plus Diffusion capacitance (Cd) due to base width
modulation
gmV = gmVbe = Ic equivalent current generator

January2004

ENGI242/ELEC222

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Hybrid Pi Relationships
gm =
VT =
gm =
r =

IC
VT
kT
= 26mV @ 300K
q
IC
26mV
(26mV) ()
26mV
=
IC
IB
=gm r

v
ic =
= gmv
r
January2004

ENGI242/ELEC222

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Hybrid Pi Relationships

January2004

ENGI242/ELEC222

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HYBRID MODEL PI MID BAND

January2004

ENGI242/ELEC222

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HYBRID MODEL PI HIGH FREQ.

January2004

ENGI242/ELEC222

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Common Emitter Amplifier

January2004

ENGI242/ELEC222

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Common Emitter Amplifier DC Bias Model

January2004

ENGI242/ELEC222

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Common Emitter Amplifier - Complete Hybrid PI

January2004

ENGI242/ELEC222

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Mid Band Hybrid PI Common Emitter

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ENGI242/ELEC222

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Equivalent Circuit to find ZO

January2004

ENGI242/ELEC222

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High Frequency Hybrid PI CE Amp

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ENGI242/ELEC222

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Common Emitter Amplifier

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ENGI242/ELEC222

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CE Amplifer Example output

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ENGI242/ELEC222

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Common Emitter Amplifier

January2004

ENGI242/ELEC222

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CE Amplifer Example output

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ENGI242/ELEC222

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Emitter Follower

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ENGI242/ELEC222

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Emitter Follower

January2004

ENGI242/ELEC222

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Emitter Follower

January2004

ENGI242/ELEC222

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Emitter Follower

January2004

ENGI242/ELEC222

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Emitter Follower

January2004

ENGI242/ELEC222

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Common Base

January2004

ENGI242/ELEC222

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Common Base

January2004

ENGI242/ELEC222

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