P-N Junction Laws

1
 P-N Junction Laws
Solution
34
pn 10
V Vthln 2 0.026 ln 12 1.31V
ni 10
n p (1017 ) 2 cm 3
ni (10 ) cm
2 6 2
3

2
P-N Junction: Carrier Diffusion

3
P-N Junction: I-V Characteristics

4
P-N Junction: I-V Characteristics

5
P-N Junction: I-V Characteristics

6
P-N Junction: I-V Characteristics

7
P-N Junction: I-V Characteristics

8
P-N Junction: I-V Characteristics
for Ideal and Real Diodes

9
P-N Junction: I-V Characteristics
in a Non-Ideal Diode

10
P-N Junction: I-V Characteristics

11
P-N Junction: I-V Characteristics

12
P-N Junction: I-V Characteristics

13
 P-N Junction: Breakdown

Energy band diagrams under junction-breakdown conditions.

14
(a) Tunneling effect (b) Avalanche multiplication.
 P-N Junction: Breakdown

Critical field at breakdown versus background doping for Si and 15

GaAs one-sided abrupt junctions.
P-N Junction: Breakdown
Breakdown
voltage for
p+--n+ and
p+-v-n+
junctions. W is
the thickness of
the lightly
doped p-type ()
or the lightly
doped n-type (v)
region.

16
Diode as a Thermometer
J ~ e n (T ) (T )
(T ) ~ T n ,1 n 2.5

EG
n(T ) N C NV exp
2 k T
B

EG
J J 0 exp
2k BT
J EG 1
ln( )
J0 2k B T
17
Diode as a Thermometer

Curr, 20V rev

D I(1/T)

-8
10

-10
Curr, 20V rev

10

-12
10

-14
10

-16
10
0.0025 0.003 0.0035 0.004 0.0045 0.005 0.0055 0.006

1/T, K-1 18