Capacitvely

EEE 400Coupled
Plasma with multi-
frequency RF sources
Prepared by Supervised by

Purab Ranjan Sutradhar Dr. Md. Nasim Ahmed

(1106054) Dewan
Ismat Jarin (1106122) Professor
Dept. of EEE, BUET
Dept. of EEE, BUET
Outline
Outline
Introduction to Plasma

Plasma in Fabrication

Capacitively Coupled Plasma

CCP Plasma Parameters

5.CCP with multi-frequency RF sources

Plasma
Highly Ionized physical state of matter
4th physical state of matter
Obtained by ionizing gaseous matter

Ionization
Gas Plasma
Recombination
Fundamental Properties

Highly conductive

Quasi-neutral

Unstable
Dynamic equilibrium of ionization and
recombination
High-energetic, often radiant
Quasi-Neutrality
The tendency of electrons to shield an unbalanced charge
Develops Sheath Region

Sheath
Types of Plasma

Plasma

Artificial Natural
Plasma Plasma

Non-thermal
Thermal or or Cold
Hot Plasma Plasma
Cold Plasma

1. Thermal non-equilibrium
High electron temperature, ranging from 1-10 eV
Low plasma temperature ( <1000 K )

2. Sustained by Electromagnetic power

sources
Cold Plasma Classification

o DC Coupled Plasma
o Inductively Coupled Plasma
o Capacitively Coupled Plasma
o Electron-Cyclotron Resonance Plasma
o Microwave Plasma
Process Plasma
Commercially used plasma for fabrication process

Electrically sustained cold plasma

CCP configuration
Cold Plasmas Advantages

o low temperature processing

o Customizable ion energy distribution

o Precisely Controlled power sources

Plasma Facilitated Processes

o Etching
o Sputtering
o Plasma Enhanced CVD( PECVD)
Plasma Etching

Plasma Bulk

Sheath

Photomask

Accelerated
Ions
Substrate
Sputtering

Substrate &
Film growth

Sputtering Gas
Ar+

Sputtering Target

Plasma Reactors

Planar Reactor
Barrel Reactor
Downstream Reactor
Planar Reactor
Plasma generated between
two plates
Substrate placed on the
bottom plate
Electric power source
Multiple frequency sources
possible
Barrel Reactor
Downstream Reactor
Electrode Plasma
s Jet

Plasma generated
outside process
chamber

Improved selectivity on
reactive ions Substrate

Cooling
Capacitively Coupled Plasma (CCP)
Commercial CCP Layout
CCP Layout (cont.)

o Uses planar reactor

o top plate grounded
o bottom plate supplied
with 13.56MHz RF source

o substrate placed on
bottom plate
Features of RF Source

o Lower sheath voltage

o Higher energy-efficiency
o Self-bias
Self Bias
Generation of a time average DC bias voltage
from RF source(s)
Causes of Self Bias
o Asymmetry of the reactor design
o Higher mobility of electrons than ions
o High frequency of the power source(s)
CCP with multi-frequency RF
sources