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MOSFETCurrentVoltageCharacteristics

Consider the cross-sectional We assume the threshold


view of an n-channel MOSFET voltage is constant along the
operating in linear mode channel.
(picture below) The channel voltage Vc has
VGS > VT0
VS =0 VDS boundary conditions:
+
- Vc at x=0=VS=0 and Vc at x=L=VDS
n+ Channel n+ The channel is inverted from
Source Drain the source end to the drain end.
x=0 x x=L
y Other voltages of interest are:
p-type substrate Depletion Region VGSVT0 and VGD=VGS-
VB =0 VDSVT0
MOSFET Voltage Characteristics
The channel current (drain QI(x)=-Cox[VGS-Vc(x)-VT0]
current ID) is caused by The thickness of the inversion
electrons in the channel region layer tapers along the channel
traveling from source to drain from the source towards the
under the influence of the drain because the influence of
lateral electric field. Vgate-tochannel decreases from
If the total mobile electron source to drain.
charge in the surface inversion If we consider a small
layer is assigned the vaiable incremental resistance dR for a
QI(x), we can thus express this differential segment of the
charge as a function of the gate- channel assuming constant
to-source voltage VGS and the electron mobility n at the
channel voltage Vc(x) surface we have: dR W Q
dx
n I ( x)
MOSFET Voltage Current Characteristic

The variable W represents the Applying Ohms law for this


channel width. segment yields the voltage drop
The electron surface mobility n along the incremental segment
depends on the doping dx: dV I dR I dx
c D
D

W n Q I ( x )
concentration of the channel
region. The above equation can now be
We further assume that the integrated along the channel
channel current density is from x=0 to x=L using the
uniform across the segment boundary conditions for Vc
where we are measuring the We get:
incremental resistance.
VGS Vc VT 0 dVc
VDS
I D L W n C ox
ID flows between the source and 0

drain.
MOSFET Voltage Current Characteristics

Assuming that the channel The drain current ID also


voltage Vc is the only variable depends on the devices channel
that depends on position x, the length and width.
drain current is determined to
be:
C W
I D n ox
2 L

2VGS VT 0 V DS VDS2
This equation shows the
dependence of the drain current
on the process parameters such
as oxide capacitance, carrier
mobility, and bulk to source
voltage.
MOSFET Voltage Current
Characteristics
The equations:
I 0 when V gs Vt
ds
2
V
I
ds
ds

V gs Vt V ds for
2


0 V V gs Vt equvalently VGS VT 0 ; VGD VGS V DS VT 0
ds

I

V gs Vt
2
for 0 V gs Vt V
ds 2 ds

represent a simple view of the MOS transistor DC Voltage current


equations.
There are models that better calculate the MOS transistors operation
with accuracy.

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