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W n Q I ( x )
concentration of the channel
region. The above equation can now be
We further assume that the integrated along the channel
channel current density is from x=0 to x=L using the
uniform across the segment boundary conditions for Vc
where we are measuring the We get:
incremental resistance.
VGS Vc VT 0 dVc
VDS
I D L W n C ox
ID flows between the source and 0
drain.
MOSFET Voltage Current Characteristics