Noise in BJT

The objective is to determine Eni , En and I n for a bipolar transistor.

The hybrid- model that includes the noise sources is shown below
Fig 5-3
The feedback elements C and r are removed . This is OK for
f
frequency < 1T/ 2 . At frequencies above that value the noise
0
mechanisms are partially correlated.
Eni is caused by the thermal noise of the base-spreading resistance.
the noise current generator I nb is the shot noise of the total base
I
current, and nc is the shot noise of the collector current.
E x2 4kTrx , I nb2 2qI B , I nc2 2qI C
The 1/f noise contribution is represented by a single noise current
generator which flows through the entire base resistance. The
spectral density of 1/f noise is given by
KI B
I 2f
f
 The exponent ranges between 1 and 2. The experimental value of K
varies over a wide range of values. An alternative expression for 1/f noise
is 2qf L I B
I
2
f
f

where fL varies from 3.7MHz to 7 MHz. '2

An expression for the 1/f noise
2qf L I B rx
voltage generator is E 2f
f
where rx' rx / 2. 1/f noise results from trapping and detrapping of carriers
in surface and bulk defect states. Transistors with high at very low
collector currents seem to have little 1/f noise as these traps are also
recombination centers.
Equivalent Input Noise
To derive the equivalent input noise Eni we first calculate the total
noise at the transistor output, the gain from the source to output, and
then divide the output noise by the gain.
The output is shorted then the output noise current is
2
I no I nc2 ( g m E ) 2 or
( E x2 Es2 ) Z2 2
( I nb I 2f ) Z2 (rx Rs ) 2
I I g
2
no
2
nc
2
m
(rx Rs Z ) (rx Rs Z ) 2
2

 g VZ
For an input signal Vs, the output short-circuit current is I o g mV m s
rx Rs Z
I
The transfer gain is K t o g Z
m
Vs rx Rs Z

The equivalent
2
input noise is therefore
I no
Eni2
K t2
I nc2 (rx Rs Z )
E E ( I I )(rx Rs )
2
x
2
s
2
nb
2
f
2

g m2 Z2
For a zero source resistance case 2
2
2 '2
2qI C r 2qf I r f
En2 4kTrx 2qI B rx2 L B x
2 qI C rx
f
02 f T

Noise in Field Effect Transistors

Three main types of noise are found in FETs -- Shot noise, flicker
noise and thermal noise
The small-signal noise equivalent circuit for an FET is shown below
Fig 6-1
 There are three principle sources of noise in a MOSFET identified as
I ng2 2qI dc
8kTg m
I nd2
3
AF
K f I DQ
I 2f
f Cox L2eff
where KF is the flicker noise coefficient
IDQ is the quiescent drain current, AF is a constant, f is the frequency.

I 2
I 2

The total noise current atnothe output
nd I 2
drain-current
f channel is

We reflect this noise current to the gate as an equivalent input noise

id ( signal )
voltage using theKKtrtrreflection
coefficient
gm defined as
v gs ( signal )
I nd2 I 2f
E 2 2 En2
2
ni
gm gm
8kT KF

3 g m 2 K p fCoxWLeff
 The first term of the above equation is equivalent to a single resistor of
value 2
Rn
3g m