High Linearity and High Efficiency Power

Amplifiers in GaN HEMT Technology

Shouxuan Xie

Department of Electrical and Computer Engineering,

University of California, Santa Barbara
June 30, 2003
 Outline

1. Introduction and motivation

- Why GaN HEMTs
- Objectives of the GaN HEMTs PA design
2. Class B for high efficiency and high linearity
- Why single-ended Class B
- Circuit design and measurement result
3. Identify and model nonlinear sources of GaN HEMTs
- Nonlinear gm
- Nonlinear Cgs
- Nonlinear Gds
4. Proposed new designs to further improve linearity
- Common drain Class B (to improve gm nonlinearity)
- Pre-linearization diode (to improve Cgs nonlinearity)
5. Problems and future works
 Why GaN HEMTs
Standard AlGaN/GaN HEMT structure
Advantages of GaN
- High breakdown field: 3 MV/cm
- High Vsat @ 2.5 x 107 cm/s
- Thermal conductivity: 3x GaAs
- Large channel charge: > 1x1013 cm-2
- Good electron mobility: >1200 cm2/V-s

Advantages of GaN HEMTs

- High power density: 12W/mm for X-band (8-12GHz)
- High Ft (50GHz) and fmax (80GHz) for 0.25um device
- Linear I-V characteristics
 GaN HEMT process and device structure
0.25um T-gate for 50GHz ft

Air-bridge for ground

connection of CPW

Plated Airbridge
Ni/Au Schottky Contact
MIM capacitors Silicon Nitride Passivation Layer

Ti/ Al/ Ni/ Au ohmic Contact

400 nm Silicon Nitride
1nm AlN layer
25 nm Al0.3Ga0.7N barrier
1.4 um GaN buffer

60nm AlN Nucleation layer

SiC substrate ~400 um

SiC substrate for high heat conducting SiN passivation for

High RF output power
 Device performance
I-V Curve for 600m SG device Linear
1000
Id-Vgs characteristic on SiC

Idss = 1 A/mm @Vgs=0V 800

Drain Current, mA
600

400

200

0
-5 -4 -3 -2 -1 0 1
Gate Bias,V

Device performance summary: RF Performance 150m DG device

40
35
Lg ~ 0.25um, 30
25
Idss ~ 1A/mm
h21 (dB)

20 fT = 50GHz
ft ~ 55GHz (50GHz for DG) 15
10
Vbr ~ 40V (55V for DG) 5
0
1 10 100
Frequency (GHz)
 Objectives of GaN HEMT PA design
Design RF MMIC power amplifier in GaN HEMT technology to achieve:
1. High linearity (low IMD3 distortion)
2. High efficiency
3. High output power
4. Broad bandwidth
(High linearity and high efficiency are primarily concerned here)

Class A: Very high linearity and wide bandwidth; but very low efficiency
(Ideal PAE 50%, feasible PAE 20-30%).

Switch mode Amplifiers (Class D, E): Very high efficiency (Ideal

PAE 100%, feasible PAE 60-70 %); but poor linearity and poor
bandwidth.

Class B: Good efficiency (Ideal PAE 78.6%; feasible PAE 40-50% )

and good bandwidth, and potentially low distortion.
 Push-pull Class B
ID+
VDS+
Vin

Vin+
Cbias RL
VD
Vout

VG
Cbias

1:1
ID-
1:1 VDS-

Vin-

Even harmonics are suppressed by symmetry => wide bandwidth

Half-sinusoidal current is needed at each drain. This requires an even-
harmonic short. It can be achieved at HF/VHF frequencies with
transformers or bandpass filters. However,

1. Most wideband microwave baluns can not provide effective short for
even-mode. Efficiency is then poor.
2. They occupy a lot of expensive die area on MMIC.
 Single-ended = push-pull
Push-pull Class B ID1
I D1 a1Vin a2Vin2 a3Vin3
ID1 Vin
0 +
+Vin
0
-ID2 I D 2 (Vin ) a1Vin a2Vin2 a3Vin3
-Vin
180
-Vin ID2
I D I D1 I D 2
= ID
180 2a1Vin (a2 a2 )Vin2 2a3Vin3
Vin
Even harmonics suppressed by symmetry
Single-ended Class B with bandpass filter
ID vout Zero Z at 2f0 Vout I D RL RL [a1Vin a2Vin2 a3Vin3 ]
Even harmonics suppressed by filter
band pass
vi RL filter @ fo
Conclusion: From linearity point of view,
push-pull and single-ended Class B with
bandpass filter B are equivalent same
Bandwidth restriction < 2:1 transfer function.
 Class B bias for high linearity

ID1 ID1 ID1

Vin Vin Vin

+ Vp
Vp + Vp +
ID2 ID2 ID2

Vin Vin Vin

= ID = ID = ID

Vin Vin Vin

Ideal Class B Bias too low: Class C Bias too high: Class AB
 Single-ended Class B Power Amplifier
Gate 2

RF IN
L2
TLIN RL
Gate 1 Cds C1 BIAS
TEE
BIAS Output
TEE Input R1 matching
L1 network
matching
network (short at 2fo, 3fo...) Vd

Vg
- section lowpass filter
Lossy input matching

Dual gate device is used since it has higher Vbr, higher MSG (smaller S 12)
and higher output resistance Rds
Lossy input matching network to widen the bandwidth
Cds is absorbed into output matching network (Low pass filter)
 Measurement setup

Bias T DUT Bias T

Signal Power
generator_1 amplifier_1
Power Coupler Coupler 50 Ohm
combiner Coupler CH_A Load
Signal Power Power - 20 dB - 20 dB
generator_2 amplifier_2 - 20 dB meter
CH_B Spectrum
- 20 dB - 20 dB Analyzer

Measurements:
Single tone from 4 GHz to 12 GHz;
Two-tone measurement at f1 = 8 GHz, f2 = 8.001 GHz;
Bias sweep: Class A (Vgs = -3.1V), Class B (Vgs = -5.1V), Class
C (Vgs = - 5.5 V) and AB (Vgs = -4.5 V).
 Class B PA measurement results

Gain and bandwidth

20
Class AB
15
G ain (dB)

10

5
Class B
0

-5
2 4 6 8 10 12 14 16

Frequency (GHz)

3 dB bandwidth for Class B: 7GHz - 10GHz

 Class B bias @Vgs = - 5.1V
40
Output power, dbm

0.5

35
Single tone performance @ f0 = 8GHz:
0.4

30

PAE
0.3
Saturated output power 36 dBm
25 0.2

20 0.1

0
15
0 5 10 15 20 25 30 PAE (saturated) ~ 34%
Input power, dbm

30 0.25

f1,f2 Two tone performance @

Output power, dBm

20
0.2
10
f1=8GHz, f2=8.001GHz :
0 0.15 PAE
-10 2f1-f2, 2f2-f1
0.1
-20

-30 0.05 Good IM3 performance:

-40
0
40dBc at Pin = 15 dBm
-50
-15 -10 -5 0 5 10 15 20
> 35 dBc for Pin < 17.5 dBm
Input power, dBm
 Class A bias @Vgs = - 3.1V
40 0.4

0.35 Single tone performance @ f0 = 8GHz:

Output power, dBm

30
0.3

0.25
20

PAE
0.2 Saturated output power 36 dBm
10 0.15

0.1
0
0.05

-10 0 PAE (saturated) ~ 34%

-20 -10 0 10 20 30
Input power, dBm

0.35
40
Two tone performance @ f1=8GHz,
O utput pow er, dB m

30 f1,f2 0.3
and f2=8.001GHz :
0.25
20

10 0.2
PAE

0 0.15

-10
2f1-f2, 2f2-f1 0.1

-20 0.05 Good IM3 performance at low

-30
0 power level but becomes bad
-20 -15 -10 -5 0 5 10 15 20
rapidly at high power levels
Input power, dBm
 IM3 suppressions of all Classes
60

IM3 compression, dBc 50

Class B
Class A

40

30
Class AB
Psat
20

Class C
10
0 5 10 15 20 25 30 35

Pout, dBm

1. Low output power levels (Pout < 24 dBm), Class A and Class B both
exhibit good linearity (Class B > 36 dBc, Class A > 45 dBc).
2. Higher output power levels, Class A behaves almost the same as Class B.
3. Class AB and C exhibit more distortion compared to Class A and B.
 Class B vs. Class A

PAE of single tone IM3 suppression and PAE of two-tone

0.35 0.3
Class A
0.3 Class B 50
0.25

IM3 suppresion, dBc

0.25

PAE, twotone
0.2
PAE, single

40
0.2
0.15
0.15
Class A
30
Class B 0.1
0.1
20
0.05
0.05

0 10 0

10 15 20 25 30 35 40 -5 0 5 10 15 20 25 30 35

Output power, dBm Output power, dBm

Maintaining good IM3 suppression, Class B can get 10% PAE

improvement over Class A during low distortion operation.
 Nonlinear sources of GaN HEMT
1. gm vs. Vgs of 600um SG device
Goal: Try to investigate nonlinear sources 0.15
of the GaN HEMT device and understand
how they affect the linearity on circuit 0.1

gm (S)
Three major sources have been investigated:
0.05
1. Nonlinear gm ( or Ids -Vgs characteristic)
2. Nonlinear Cgs
0
3. Nonlinear Gds -12 -10 -8 -6 -4 -2 0
Vgs (V)

3. Gds vs. Vgs and Vds of 600um SG device

2. Cgs vs. Vgs of SG device
0.02
700
0.015 600
Vds=20V
Gds (mho)

Cgs (fF/mm)
500
0.01
Vds=15V 400

0.005 300
Vds=10V
200
0 100
-12 -10 -8 -6 -4 -2 0 2 -8 -7 -6 -5 -4 -3 -2 -1 0
Vgs (V) Vgs (V)
 Nonlinear sources of GaN HEMT

Vin ( 0 ) V0 cos 0t I out g mVgs Vout I out RLeq

Input MN
Vgs
(linear, Zs)
Cgs
Cds
Gds RL
 Nonlinear gm

Vin ( 0 ) V0 cos 0t
Vout I out RLeq
Vgs ( 0 )
Input MN
(linear, Zs)
Cgs
Cds
Gds RL

I out g m Vgs
2 3
I 0 I1 Vgs I 2 Vgs I 3 Vgs ...

0 ,3 0
 Nonlinear gm
2 3
Modeled as: I I 0 I1 *Vgs I 2 *Vgs I 3 *Vgs .........
This term creates
IM3 distortion

0.8

0.7
Experimental (A/mm)
(A/mm)

0.6 Modeled (A/mm)

0.5
ds

Dominate at high
Drain Current I

0.4
output power levels
0.3 more interesting
Vp
0.2
Dominate at low
0.1 output power levels
0
-5 -4 -3 -2 -1 0
V (V)
gs
 Nonlinear Cgs

Directly effect of Cgs

Vin ( 0 ) V0 cos 0t
Input MN
i Vgs ( 0 )
(0)
Vout I out RLeq

(linear, Zs)
Cgs
Cds
+ V* i Z
s
- Gds RL
Q(Vgs)

2 3
Q(Vgs ) q0 q1 Vgs q2 Vgs q3 Vgs
( 0)
Q(Vgs )
i(1) t
0 ,2 0 ,3 0
(0)
Q(Vgs )
Vgs
(1)
Vin Z s 0 ,2 0 ,3 0
t
 Nonlinear Cgs
Cgs vs Vgs of GaN HEMTs on SiC
If modeled as:
700
Experimental (fF/mm)
600 C gs C0 C1 TanH (Vgs Vc)
modeled (fF/mm) direct
500
Cgs (fF/mm)

Anti-symmetric about V=Vc

400
then should be no distortion
300

200
Vc Vp
100
-8 -7 -6 -5 -4 -3 -2 -1 0 Therefore even
This term creates order component of
V (V)
gs
IM3 distortion Cgs(Vgs) creates
IM3 distortion
Q q0 q1V q2V 2 q3V 3

Q
C (V ) q1 2q 2V 3q3V 2 c0 c1V c2V 2
V
 Nonlinear Cgs Indirect effect
Vin ( 0 ) V0 cos 0t
(1)
i Vgs
(1)
Vin V * Vout I out RLeq
Input MN
(linear, Zs)
Cgs
+
V * i Zs - Q(Vgs)
Cds
Gds RL

2 3
Q (Vgs ) q0 q1 Vgs q2 Vgs q3 Vgs
(1)

( 0)
Q(Vgs )
0 ,2 0
(1)
Vgs Vin Z s
t
 Nonlinear Cgs Indirect effect
Vin ( 0 ) V0 cos 0t
(1)
i Vgs
(1)
Vin V * Vout I out RLeq
Input MN
(linear, Zs)
Cgs
+
V * i Zs - Q(Vgs)
Cds
Gds RL

2 3
Q (1) (Vgs ) q0 q1 Vgs q2 Vgs q3 Vgs
( 0)
Q(Vgs )
0 ,2 0
(1)
Vgs Vin Z s
t
(1) (1) 2 (1) 3
Q (Vgs ) q0 q1 Vgs q2 Vgs
( 2)
q3 Vgs
(1)
Q (Vgs )
0 ,3 0
( 2)
Vgs Vin Z s
t
 Nonlinear Cgs + nonlinear gm

Vin ( 0 ) V0 cos 0t
Vgs ( 0 ,2 0 ) Vout I out RLeq
Input MN
(linear, Zs)
Cgs
Cds
Gds

I out g m Vgs
2 3
I 0 I1 Vgs I 2 Vgs I 3 Vgs ...

Indirect direct

0 ,3 0
 Nonlinear Gds
Vin ( 0 ) V0 cos 0t I out g mVgs
Input MN
Vgs
(linear, Zs)
Cgs
Cds
Rds RL

0.02 Gds vs. Vgs of 600um SG device

Vds=20V Vout I out RLeq
0.015
Gds (mho)

0.01 Vds=15V RLeq RL // Rds

0.005 Vds=10V

0
-12 -10 -8 -6 -4 -2 0 2
Vgs (V)
 Nonlinear Gds
DC I-V curve of 600um device on SiC
Short channel effect
Vgs = 0 V

Vgs = -7V Vgs = -7 V

Vds = 8V Vds = 15V
Current through GaN buffer, need
more gate voltage to pinch off
 Vp shift due to short channel effect

1.2mm SG device DC I-V curve at different drain bias

0.8
0.7 Vds=20V
0.6
0.5 Vds=15V
Ids (A)

0.4
Vp shift
0.3
0.2 Vds=10V
0.1
0
-12 -10 -8 -6 -4 -2 0
Vgs (V)
 Nonlinear Cgs + Vp shift

Cgs Cgs Cgs Cgs

C0 C C0
0 C
0
Cgs(Vin)
Vc Vin Vc Vin Vc Vin Vin
Vc
Vb Vb Vb
Vb
Cgs Cgs Cgs Cgs
C0 C0 C0 C0

Cgs(-Vin)
Vin Vin Vin Vin

2C0 2C0
2C0
DC 2C0

Cgs Cgs Cgs

Vc Vc
Even order Vin Vin Vin
Vc -Cgs Vc Vin
component
Vb Vb Vb
Vb

Vb=Vp=Vc Vb<Vc Vb>Vc Vb>>Vc

 Paidis nonlinear model
Var
VAR
Nonlinear Gds currently is
Eqn
VAR14 modeled by shift in Vp;
vp1(v)=if (v<8) then vp11(v) else vp12(v) endif;
vp11(v)=vp
vp12(v)=vp-0.0*(v-8) C
C2
C=Cgd pF

Vg vd
I_Probe C
R I_Probe1C3
R6
C=Cds pF
R=Rin Ohm
Cgs is ideal tanH
SDD1P
SDD1P1
R I-V characteristic
R9
I[1,1]=Q(_v1) vs R=2 Ohm
currently is linear
I[1,0]=0
C[1]=
Var
Eqn
VAR
Cport[1]= VAR7
I1(v1,v2)=gm*(v1-vp1(v2))
Var
Eqn
VAR I3(v)=0.011
VAR6 I4(v)=0.00
Q(v)=cgs*0.6*v+cgs*0.4*ln(cosh(v+5)) I2(v)=0
 Further improve linearity
1. Common drain Class B to improve gm linearity
Vout
Vd
GainCS RLoad g m (Vgs )
RFC Vin
CD circuit schematic Vout RLoad g m (Vgs )
GainCD
Vin 1 RLoad g m (Vgs )
RF IN
TLIN Linearization factor

BIAS C1
TEE Input R1 RL also functions
L2 C
matching
network
2 RL as series-series
feedback resistor,
Vg
Band-Pass Filter which increase gm
( Short at 2fo,3fo..)
linearity.

Disadvantage -- Stability problem: Since the MSG is less, the circuit is not
unconditionally stable in order to keep reasonable high efficiency. Therefore,
extra requirement for the source and load impedance is needed.
 Simulation result of CD @5GHz

Pout and PAE in single tone Pout ~ 38dBm

40 0.5

35
Output Power, dBm

Pout 0.4
30

PAE
0.3
25
PAE 0.2
PAE(sat) ~ 38%
20

15 0.1

10 0
5 10 15 20 25 30 35
input power, dbm
 Simulation result of CD vs. CS cont.
Two-tone simulation result of CD vs. CS

70
Common Drain
IM 3 S up p re ssion , dB c

60

50
12 dB 10 dB
40

30

20 Common Source:
with 37.6dBm Pout
10 and 42% PAE(sat)

0
5 10 15 20 25 30 35
pout, dBm
Common Drain vs. Common Source cont.

Simulation result of IM3 suppression at 1W

total output power as a function of bias point

60
Class C Class AB Common Drain
IM 3 suppression (dB c)

50

40
Common Source
30

20

10 Class B Class A

0
-8 -7 -6 -5 -4 -3 -2
Vgs (V)
 Further improve linearity cont.

2. Pre-linearization diode to improve Cgs linearity

C_total
800

700

600
Cgs (fF/mm)

500
Cgs
400

300

200 C_pd
Vc
100
-8 -7 -6 -5 -4 -3 -2 -1 0

Gate Bias Vgs (V)

 Pre-linearization diode

C gd
Vb1=Vp=-4V

0.25umx100umx12
C gs_pd C gs

Vb1=2*Vp=-8V

Can be very easily implemented on

chip and occupy very small area

Gate length can be varied and

optimum value can be found since
write using E-beam-lithography
0.75umx100umx4
 Simulation result of PD
IM3 simulation result the designed dual gate CS
Class B with pre-linearization diode @10GHz
70
At least 4dBc
IM3 suppression (dBc)

With PD improvement
60
in IMD3

50

Without PD
40

30

20
10 15 20 25 30 35 40
Output power (dBm)
 Problems and future works
!! Problem: Short channel effect for 0.25um device !!
0.25umx100um device on Sapphire 0.75umx100um device on Sapphire

Vgs=0V Vgs=0V

Vgs=-10V
Vds=16V Vgs=-7V

Nonlinear Gds will affect linearity performance directly;

It creates Vp shift, hence generate nonlinear Cgs distortion;
Increases DC bias current, hence decreases PAE;
Decreases breakdown voltage, hence decreases the output power
and also PAE
 Short channel effect
Currently dual gate device is used:
- Nearly no Vp shift
- Lower Gds (higher Rds)
- Higher maximum stable gain (MSG)

0.6 I-V curve of 600um DG device Gds

0.01 of 600um devices at Vds=20V
0.5
0.008
Vds =15V
0.4

Gds (mho)
0.006
Single gate
Ids (A)

0.3

0.2 Vds =20V 0.004

Dual gate
0.1 0.002

0 0
-12 -10 -8 -6 -4 -2 0 2 -12 -10 -8 -6 -4 -2 0
Vgs (V) Vgs (V)

- Number of gates get doubled, hard to yield all

- Little bit lower ft, and higher Vknee, hence lower PAE
- Not easy to model the nonlinear effect
 Layouts of the new designed circuits
CD SG Class B @5GHz CS SG Class B @5GHz

CS DG Class B @10GHz CS DG Class B @10GHz with PD

 New device structures to improve linearity

Plated Airbridge
Ni/Au Schottky Contact
Silicon Nitride Passivation Layer

Ti/ Al/ Ni/ Au ohmic Contact

400 nm Silicon Nitride
1nm AlN layer
25 nm Al0.3Ga0.7N barrier
1.4 um GaN buffer

60nm AlN Nucleation layer

SiC substrate ~400 um

Improve short channel effect by: Add Fe doping

- Make the Fe doping layer closer to the channel layer to decrease
- Gate recess to increase aspect ratio leakage current
through the buffer
??? Question:
How about decrease Al% in AlGaN -Increase breakdown and decrease g m?
How about P-type doping GaN buffer layer?
??? Other ideas to increase breakdown???
 Summary

Class B bias is good for high linearity and high efficiency;

Three main nonlinear sources of the GaN HEMT device
have been investigated with a new idea of nonlinear model;
According to simulation, common drain class B can improve
linearity by 10dB over CS, and pre-linearization diode can
improve linearity by 4dB. Four more circuits are designed
and being fabricated to prove them;
Short channel effect for 0.25um device has been observed.
New device structure is proposed to solve the problem and
better linearity performance is expected.
 Proposed future works

1. Fabricate and measure the new designed circuits (CD and PD)
summer
- Need to stabilize the PECVD passivation process
2. Complete the new model to understand all the nonlinear effects
- Add gm nonlinearity
summer
- More accurate model for dual gate device
3. Further improve linearity by new device structures
Fall
- Work with Mishras group to improve the short channel effect
4. Publish paper and write thesis
Fall
5. New ideas on device structure and model to further increase linearity and
efficiency
 Publications and references
Publications:
1. Vamsi Paidi, Shouxuan Xie, R. Coffie, U. Mishra, M J W Rodwell, S. Long, Simulations of High
linearity and high efficiency of Class B Power Amplifiers in GaN HEMT Technology. Lester
Eastman Conference, Aug. 2002
2. Shouxuan Xie, Vamsi Paidi, R. Coffie, S. Keller, S. Heikman, A. Chini, U. Mishra, S. Long, M.
Rodwell, High Linearity Class B Power Amplifiers in GaN HEMT Technology. Topical Workshop on
Power Amplifiers, Sept. 2002
3. Shouxuan Xie, Vamsi Paidi, R. Coffie, S. Keller, S. Heikman, A. Chini, U. Mishra, S. Long, M.J.W.
Rodwell, High linearity of Class B Power Amplifiers in GaN HEMT technology. Microwave and
Wireless Components Letters, to be published
4. Vamsi Paidi, Shouxuan Xie, R. Coffie, B. Moran, S. Heikman, S. Keller, A. Chini, S. P. DenBaars,
U. K. Mishra, S. Long and M. J.W. Rodwell, High Linearity and High Efficiency of Class B Power
Amplifiers in GaN HEMT Technology. IEEE Transactions on Microwave Theory and Techniques,
Vol. 51, No. 2, Feb. 2003

Other references:
1. K. Krishnamurthy, R. Vetury, S. Keller, U. Mishra, M. J. W. Rodwell and S. I. Long, Broadband
GaAs MESFET and GaN HEMT Resistive Feedback Power Amplifiers. IEEE Journal of Solid State
Circuits, Vol. 35, No. 9, Sept. 2000.
2. K. Krishnamurthy, S. Keller, C. Chen, R. Coffie, M. Rodwell, U. K. Mishra, Dual-gate AlGaN/GaN
Modulation-doped Field-effect Transistors with Cut-Off Frequencies T >60 GHz, IEEE Electron
Device Letters, Vol. 21, No. 12, Dec. 2000
 Publications and references- cont.
3. Solid State Radio Engineering, Herbert L. Krauss, W. Bostian, Frederick H. Raab/ Wiley, John &
Sons, Nov. 1980
4. Raab, F.H. Maximum efficiency and output of class-F power amplifiers. IEEE Transactions on
Microwave Theory and Techniques, vol.49, (no.6, pt.2), IEEE, June 2001. p.1162-6.
5. Kobayashi, H.; Hinrichs, J.M.; Asbeck, P.M. Current-mode class-D power amplifiers for high-
efficiency RF applications. IEEE Transactions on Microwave Theory and Techniques, vol.49,
(no.12), IEEE, Dec. 2001. p.2480-5.
6. Eastman, L.F.; Green, B.; Smart, J.; Tilak, V.; Chumbes, E.; Hyungtak Kim; Prunty, T.; Weimann,
N.; Dimitrov, R.; Ambacher, O.; Schaff, W.J.; Shealy, J.R. Power limits of polarization-induced
AlGaN/GaN HEMT's. Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices,
Piscataway, NJ, USA: IEEE, 2000. p.242-6. 274 pp..
7. Wu, Y.-F.; Kapolnek, D.; Ibbetson, J.; Zhang, N.-Q.; Parikh, P.; Keller, B.P.; Mishra, U.K. High Al-
content AlGaN/GaN HEMTs on SiC substrates with very high power performance. International
Electron Devices Meeting 1999, Piscataway, NJ, USA: IEEE, 1999. p.925-7. 943 pp.
8. Joseph, J. Teaching design while constructing a 100-watt audio amplifier. Proceedings. Frontiers in
Education 1997, 27th Annual Conference (vol.1)Pittsburgh, PA, USA, 5-8 Nov. 1997.) Champaign,
IL, USA: Stipes Publishing, 1997. p.170-2 vol.1. 3 vol. xxxvi+1624 pp. 3
9. Shealey, V.; Tilak, V.; Prunty, T.; Smart, J.A.; Green, B.; Eastman, L.F. An AlGaN/GaN high-
electron-mobility transistor with an AlN sub-buffer layer. Journal of Physics: Condensed Matter,
vol.14, (no.13), IOP Publishing, 8 April 2002. p.3499-509.
10. W. R. Curtice and M. Ettenberg, "A nonlinear GaAsFET model for use in the design of output
circuits for power amplifiers," IEEE Trans of Microwave Theory Tech, vol. MTT-33, pp. 1383-1394,
Dec. 1985.
Thank you!
 Does Vc change?

Vc

Consider Cgs nonlinearity only

simulate IM3 result at 1W output power level:
Vp = -5V, Vc = -5V, without PD: 46.3dBc, with PD: 57.4dBc
Vp = -5.5V, Vc = -5V, without PD: 40.1dBc, with PD: 57.6dBc
 GaN HEMT Model Vp shift

1.6
1.4
Drain Current, A

1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Vds, V
 0.16
Ids200ns 0.16
0.14 Ids80us Ids200ns
IdsDC 0.14 Ids80us
0.12 IdsDC
0.12
0.10
0.10
Ids(A)

0.08

Ids(A)
0.08
0.06
0.06
0.04
0.04
0.02
0.02
0.00
0 2 4 6 8 10 12 14 16 18 0.00
Vds(V) 0 2 4 6 8 10 12 14 16
Vds(V)
 Advantages of GaN
4

Ref: Gelmont et al., T = 300 K

J. Applied Physics
Electron Velocity (107 cm/sec)

74, August 1, 1993

3
InGaAs GaN: ND = 1017 cm-3

GaAs
2
InP

GaN: ND = 1019 cm-3

1

Si Note scale change

( 10 larger)
0
0 0.3 0.5 1.0 1.5 2.0 2.5 3.0

Electric Field Strength (105 V/cm)

Class B two-tone output spectrum
40 40
Medium input power 1
Output spectrum, dBm

Output spectrum, dBm

20
Low input power 20

Pout =18 dBm

0
Pout = 4 dBm 0
IM3 = 39 dBc
-20 IM3 = 43 dBc -20

-40 -40

-60 -60
7.998 7.999 8 8.001 8.002 8.003 7.998 7.999 8 8.001 8.002 8.003

Freq, GHz Freq, GHz

40
Medium input power 2 40
High input power
Pout = 26 dBm

O utput spectrum , dB m
Output spectrum, dBm

20
Pout = 22 dBm 20
IM3 = 25 dBc
0
IM3 = 40 dBc 0

-20
-20

-40
-40

-60
-60
7.998 7.999 8 8.001 8.002 8.003
7.998 7.999 8 8.001 8.002 8.003
Freq, GHz Freq, GHz
 Class A two-tone output spectrum
40 Low input power Medium input power 2
Output spectrum, dBm

40

Output spectrum, dBm

20 Pout = 10 dBm 20 Pout = 23 dBm
0 IM3 > 50 dBc 0 IM3 = 42 dBc
-20
-20

-40
-40

-60 -60
7.998 7.999 8 8.001 8.002 8.003 7.998 7.999 8 8.001 8.002 8.003

Freq, GHz Freq, GHz

Medium input power 2 High input power

40

Output spectrum, dBm

40
Pout = 27 dBm
Output spectrum, dBm

20 20
IM3 = 31 dBc Pout = 31 dBm
0 0
IM3 = 15 dBc
-20 -20

-40 -40

-60 -60
7.998 7.999 8 8.001 8.002 8.003 7.998 7.999 8 8.001 8.002 8.003

Freq, GHz Freq, GHz