Escolar Documentos
Profissional Documentos
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Displays
Input: 0V =OFF, or 5V = ON
= 5V
PB0
PB1
PB2
PB3
PB4
1.PB6
We will first select the column C1 2. Now, the first column is 3. Next, select the
(which means C1 is pulled low in this active, and you need to turn column C2 (and deselect
case), and deselect other columns by on the LEDs in the rows R2 all other columns), and
blocking their ground paths (one way of through R7 of this column, apply forward bias to R1
doing that is by pulling C2 through C5 which can be done by and R5, and so on.
http://embedded-lab.com/blog/?p=2478
http://pdf1.alldatasheet.com/datasheet-pdf/view/64648/HP/HDLX-
2416.html
M a in m e m o r y
R A M R O M FLA S H
D R A M S R A M M -R O M PR O M E PR O M E E PR O M
STATIC RANDOM ACCESS MEMORY (SRAM)
SRAM circuitry is a "flip-flop.
It is faster than that of DRAM (The fastest SRAM may be as much as 7 times
faster than DRAM).
Cost: SRAM is, byte for byte, several times more expensive than DRAM.
http://www.tpub.com/content/fc/14100/css/14100_157.htm
Flash memory
A special type of EPROM or EEPROM that can be erased and
reprogrammed in blocks instead of one byte at a time.
Many modern PCs have their BIOS stored on a flash memory chip so that it
can easily be updated if necessary.
http://smithsonianchips.si.edu/ice/cd/MEMORY97/SEC10.PDF
Electrically Erasable Programmable ROM
(EEPROM)
The next level of erasability is the EEPROM, which can be erased under
software control.
This is the most flexible type of ROM, and is now commonly used for
holding BIOS programs.
Here we are blurring the line a bit between what "read-only" really means,
but remember that this rewriting is done maybe once a year or so, compared
to real read-write memory (RAM) where rewriting is done often many times
per second!
HCS 12 Internal Architecture
HCS12 Memory Map
Address Usage
Range
Mode Details PAD0 PAD1
$0000-$03FF Registers
$0400-$0FFF EEPROM 1 EVB mode 0 0