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VLSI Design
Instructed by Shmuel Wimer
Bar-Ilan University, Engineering Faculty
Technion, EE Faculty
200
(Billions of US$)
150
100
50
0
1982 1984 1986 1988 1990 1992 1994 1996 1998 2000 2002
Year
100,000,000
Integration Levels
Pentium 4
Pentium III
10,000,000 Pentium II
Pentium Pro SSI: 10 gates
Transistors
Pentium
Intel486
1,000,000
Intel386
100,000
80286
MSI: 1000 gates
8086
10,000 8080
1,000
4004
8008
LSI: 10,000 gates
1970 1975 1980 1985 1990 1995 2000
VLSI: > 10k gates
Year
1,000 4004
8008
8080
Clock Speed (MHz)
100 8086
80286
Intel386
10 Intel486
Pentium
Pentium Pro/II/III
1 Pentium 4
Year
Si Si Si
Si Si Si
Si Si Si
Si Si Si Si Si Si
- +
+ -
Si As Si Si B Si
Si Si Si Si Si Si
p-type n-type
anode cathode
p bulk Si
0
n+ n+
S D
p bulk Si
1
n+ n+
S D
p bulk Si
p+ p+
n bulk Si
d d d
nMOS g OFF
ON
s s s
d d d
pMOS g OFF
ON
s s s
A Y VDD
0
1
A Y
A Y
GND
Oct 2010 CMOS VLSI Design 24
CMOS Inverter
A Y VDD
0
1 0 OFF
A=1 Y=0
ON
A Y
GND
Oct 2010 CMOS VLSI Design 25
CMOS Inverter
A Y VDD
0 1
1 0 ON
A=0 Y=1
OFF
A Y
GND
Oct 2010 CMOS VLSI Design 26
CMOS NAND Gate
A B Y
0 0
0 1 Y
1 0 A
1 1
B
Y
A
B
C
C D
A B C D
A B
(c)
(d)
C D
A
A B
B
Y Y
C
A C
D
B D
(f)
(e)
A
B
C D
Y
D
A B C
n+ diffusion
p+ diffusion
n+ n+ p+ p+
polysilicon
n well
p substrate
metal1
p+ n+ n+ p+ p+ n+
n well
p substrate
GND VDD
n-well
Polysilicon Polysilicon
n+ diffusion n+ Diffusion
p+ diffusion p+ Diffusion
Contact
Contact
Metal Metal
p substrate
SiO2
p substrate
Photoresist
SiO2
p substrate
Photoresist
SiO2
p substrate
Photoresist
SiO2
p substrate
SiO2
p substrate
n well
n well
p substrate
Polysilicon
Thin gate oxide
n well
p substrate
Polysilicon
Polysilicon
Thin gate oxide
n well
p substrate
n well
p substrate
n+ Diffusion
n well
p substrate
n+ n+ n+
n well
p substrate
n+ n+ n+
n well
p substrate
p+ Diffusion
p+ n+ n+ p+ p+ n+
n well
p substrate
Contact
n well
p substrate
Metal
Metal
Thick field
oxide
p+ n+ n+ p+ p+ n+
n well
p substrate