The document discusses four common crystal growth techniques: liquid phase epitaxy (LPE), metal-organic chemical vapor deposition (MOCVD) also known as organometallic vapor phase epitaxy (OMVPE), and molecular beam epitaxy (MBE). It provides an example of blue laser diodes grown using MBE, showing transmission electron microscope (TEM) and scanning electron microscope (SEM) images of the epitaxial layers and fabricated device.
The document discusses four common crystal growth techniques: liquid phase epitaxy (LPE), metal-organic chemical vapor deposition (MOCVD) also known as organometallic vapor phase epitaxy (OMVPE), and molecular beam epitaxy (MBE). It provides an example of blue laser diodes grown using MBE, showing transmission electron microscope (TEM) and scanning electron microscope (SEM) images of the epitaxial layers and fabricated device.
The document discusses four common crystal growth techniques: liquid phase epitaxy (LPE), metal-organic chemical vapor deposition (MOCVD) also known as organometallic vapor phase epitaxy (OMVPE), and molecular beam epitaxy (MBE). It provides an example of blue laser diodes grown using MBE, showing transmission electron microscope (TEM) and scanning electron microscope (SEM) images of the epitaxial layers and fabricated device.