Parameters to use for the problems:

Silicon:

Eg = 1.12eV
Si(T = 300K): ni (T = 300K)= 1010/cm3

s(Silicon) = Ks o = (11.8)(8.85x10-14 F/cm)

ox(SiO2) = Kox o = (3.9)(8.85x10-14 F/cm)

TEST A
1) Below is a band diagram of a Silicon based MOS Capacitor at room temperature. You may assume
that tox = 100nm=10-6cm.

.208eV
Ec
.29eV
EFS
Ei

Ev

a) Determine the surface potential F .208V

This is an n - type MOS C F .208V
S .29V .208V .498V S .498V

b) Determine the mode of operation

S 2F inversion
c) Determine the concentration of holes at the surface

At the surface EF- Ei = .29eV p = 7x1414cm-3

d) Determine the capacitance per unit area (you may assume slow speed)

Since the device is in inversion CMOS-C = Cox

ox (3.9)8.85 1014
Cox 6
3.45 107 F / cm 2
tox 10 cm

TEST A
 e) Determine the threshold voltage

qN DW (s )
VTP Vg (S 2F ) s ( n type)
Cox

1/ 2 1/ 2
2 2
WT W (S 2F ) Si S Si 2F
qN D qN D

.208
Nd ni exp 3 10 / cm
13 3

.026
ox (3.9)8.85 1014
Cox 6
3.45 107 F / cm2
tox 10 cm

1
2 2(11 .8)8.85 1014
1
2 2
W Si 2F ( .416) 4.26 104 cm
1.6 10 3 10
19 13
qNd

VTP 2F
qNdW ( 2F )
.416
1.6 1019 3 1013 4.26 104 .476V
Cox 3.45 107

2) Below is a band diagram of a Silicon based MOS Capacitor at room temperature. You may assume
that tox = 100nm=10-6cm. Determine the mode of operation

.297eV
Ec
EFS
.33eV Ei

Ev

F .297V
This is an n - type MOS - C F .297V

S .033V

S 0 Accumulation

TEST A
3) Below is a band diagram of a Silicon based MOS Capacitor at room temperature. You may assume
that tox = 100nm=10-6cm.
a) What type of MOS-C?
b) Determine F
c) Determine S
d) What mode of operation is the MOS-C in.
e) Determine the concentration of electrons at the surface
f) Determine the Applied Gate voltage, Vg.
g) Determine the capacitance per unit area
h) Determine the threshold voltage
i) Suppose that the applied gate voltage is changed to -1Volt. Would the Capacitance of the
MOS capacitor go up or down? Justify your answer.
a) p-type Ec
b F = .32 V
c s = .6 V Ei
d) Depletion .28eV EFS
e)
Ev
.32eV
.28
n ni exp 4.75 10 / cm
14 3

.026
EFM
qNaW (S )
f ) Vg S
Cox
q
Na ni exp F 2.2 1015 / cm3
KT
ox (3.9)8.85 10 14
Cox 6
3.45 10 7 F / cm 2
tox 10 cm
1

1
2 2 2(11 .8) 8.85 10 14 2
W Si S (.6) 5
5.96 10 cm
qN a 1.6
10 19
2.2
1015

Vg S
qNaW (S )
.6

1.6 10 19 2.2 1015 6.16 10 5
.66V

Cox 3.45 10 7

CMOS C Cdep || Cox

si (11 .8)8.85 10 14
Cdep 5
1.75 10 8 F / cm 2
W 6 10
CMOS C 1.75 10 || 3.45 10 7 1.66 10 8 F / cm 2
8

TEST A
 qNaW (2F )
h) Vg 2 F
Cox
q
Na ni exp F 2.2 1015 / cm3
KT

Cox

ox (3.9) 8.85 1014
3.45 107 F / cm2
tox 10 6
1

1
2 Si 2(11 .8) 8.85 1014
2 2
W 2F (.64) 5
6.16 10 cm
qNa 1.6 1019
2.2 10 15

Vg 2F
qNaW (S )
.64

1.6 1019 2.2 1015 6.16 105
.703V

Cox 3.45 107

i) It would increase

TEST A
4) Below is the minority carrier distribution in a pn-junction with an applied voltage of -1V.
Determine the small signal junction capacitance per unit area.

pno=3x104

npo=104

x
xp xn
a) Draw the resulting band diagram. Label and provide numerical answers for Vbi, (Vbi-Va), Va, FN, FP

Na 1016 cm 3
Nd .33 1016 cm 3

KT Nd .33 1016
FN ln .026 V ln 10
.33V
q ni 10
KT Na 1016
FP ln .026 V ln 10 .36V
q ni 10
Vbi FP FN .69V

Vbi Va 1.69V

.36eV
EFP
1.69eV

1eV
Ec
EFN

.33eV Ei

Ev
TEST A
 b) Draw the corresponding charge distribution. Label and provide numerical values for xn and xp

2 Nd Vbi Va
1/ 2

x p si
q Na ( Na Nd )

xp

16

211 .8 8.87 1014 .33 1016 1.69
1/ 2

2.3 105 cm

1.6 10 19 10 (1.33 1016 )

xn x p
Na
Nd

3 2.3 105 7.0 105 cm

qNa .0016 ( x) coul / cm3

qNd .000533

.000533

2.3 10 5 cm

7.0 10 5 cm x

.0016

Determine the small signal Junction capacitance per unit area

si 11 .8 8.87 10 14
C' 1.12 10 8 F / cm 2
W 9.3 10 5

Determine the E-field at x = 0

qNa
( x) (x xp )
s
qNa (1.6 10 19 )1016
( x 0) (xp ) (2.3 10 5 ) 3.5 10 4 V / cm
s (11 .8)(8.87 10 )14

TEST A
Suppose the applied voltage is change to be +.3 Volts
Draw the resulting band diagram

0.39eV

Ec
EFN
.36eV .3eV
EFP .33eV Ei

Ev

Suppose the applied voltage is change to be +.3 Volts

Draw the resulting charge distribution
( x) coul / cm3

.000533

1.12 105 cm

3.4 105 cm x

.0016

TEST A
Determine the current density assuming Va = .3V and Dn = 25 cm 2/sec, Dp = 10cm2/sec, Ln = Lp = .01cm

qVa
J Jo exp 1
KT

Dn
Jo q n po
Dp
25
pno 1.6 1019 104
10


3 104 8.8 1012
Ln Lp .01 .01
exp(qVa / KT ) exp(qVa / KT ) 110 5

J 8.8 107

TEST A