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=-IDRS
2 2
V V / 3 .4
I D I DSS 1 GS I DSS 1 0.5I DSS
GS ( off )
V V
GS ( off ) GS ( off )
JFET Midpoint Biasing-self bias-formula
method
The value of RS needed to establish VGS can be determined
by the relationship below.
RS = | VGS/ID |
LDMOSFET VMOSFET
POWER MOSFET
Dual gate MOSFETs have two gates which
helps control unwanted capacitive effects at
high frequencies.
MOSFET Characteristics and Parameters
Solution:
a) The device has a ve VGS(off), this is an n-channel
MOSFET.
b) ID=IDSS(1-VGS/VGS(off))2=(10mA)(1- (-3/-8))2 =3.91mA
c) ID=(10mA)(1- (+3/-8))2=18.9mA
E-MOSFET Characteristics and Parameters
The E-MOSFET for all practical
purposes does not conduct
until VGS reaches the threshold
voltage (VGS(th)). ID when
conducting can be determined
by the formulas below. The
constant K must first be
determined from data sheet
by taking ID(on) at any given
value of VGS on a particular
MOSFET.