AV-241

Electronics-Devices and basic circuits

Lecture No 1

“BASIC SEMICONDUCTOR
CONCEPTS”
Text Book: Chapter 3
Section 3.7.1

Instructor: Asst Prof Shafqat ul Mulk

Class: 78(B) EC
Number of Slides: 16

Avionics Engineering Department 1

 OBJECTIVES
• Revision of Basic concepts related to
Semiconductor
• Understand language of This course
 ELECTRONICS
• The branch of physics concerned with the
behavior of electrons in the circuits, its
control by means of semiconductor
devices such as diodes and transistors
etc.
SOLID-STATE ELECTRONICS

• Transistors control the flow of electrons

through solid semiconductor substances
rather than through a vacuum, and so
transistor technology is often referred to as
solid-state electronics.
 MICROELECTRONICS
• The art of electronic equipment design and
construction that uses micro- miniaturization schemes.
• The entire body of electronic art that is connected with
or applied to the realization of electronic systems from
extremely small electronic parts.
• All techniques for the manufacture of extremely small
electronic circuits, generally including all types of
silicon integrated circuits, thin-film circuits, and thick-
film circuits
• EXAMPLES. Microprocessor, Micro-controller,
Integrated circuits, cornerstone of computing and
communications revolution
 SEMICONDUCTOR
• A material between conductors and
insulators in its ability to conduct electrical
current (e.g., silicon, carbon and germanium,
gallium arsenide)

• Pure state is known as intrinsic state

• Today’s IC technology is based entirely on

silicon. Our text book mostly deals with
SILICON devices only
 COVALENT BONDS
Shared electrons
of a covalent bond

Figure 3.40 Two-dimensional representation of the silicon crystal. The circles represent the
inner core of silicon atoms, with +4 indicating its positive charge of +4q, which is neutralized
by the charge of the four valence electrons. Observe how the covalent bonds are formed by
sharing of the valence electrons. At 0 K, all bonds are intact and no free electrons are available
for current conduction.
 Important Concepts

• Drift
• Diffusion
• Doping
• N-type
• P-type
• Donor
• Acceptor
• Majority/minority
PN-Junction
Figure 3.40 Two-dimensional representation of the silicon crystal. The circles represent
the inner core of silicon atoms, with +4 indicating its positive charge of +4q, which is
neutralized by the charge of the four valence electrons. Observe how the covalent bonds
are formed by sharing of the valence electrons. At 0 K, all bonds are intact and no free
electrons are available for current conduction.
Figure 3.41 At room temperature, some of the covalent bonds are broken by
thermal ionization. Each broken bond gives rise to a free electron and a hole,
both of which become available for current conduction.
Figure 3.42 A bar of intrinsic silicon (a) in which the hole
concentration profile shown in (b) has been created along the x-axis by
some unspecified mechanism.
Figure 3.43 A silicon crystal doped by a pentavalent element. Each
dopant atom donates a free electron and is thus called a donor. The
doped semiconductor becomes n type.
Figure 3.44 A silicon crystal doped with a trivalent impurity. Each
dopant atom gives rise to a hole, and the semiconductor becomes p
type.
Summary
 Next Lecture
• PN junction under Open Circuit and
Reverse Bias conditions