Department Of Technical Education

Andhra Pradesh
Name :G Sudhakar Reddy.
Designation :Senior Lecturer.
Branch :ECE
Institute :Government Polytechnic
Narsipatnam.
Year/Semester :III semester.
Subject :ELECTRONICS CIRCUITS-I.
Subject Code :EC-302.
Topic :FET& UJT.
DURATION :50 MIN
SUB TOPIC :Construction of
enhancement
MOSFET
TEACHING AIDS :Animation & photographs
EC302.35 to 36 1
 OBJECTIVES
Upon the completion of this topic the student will be able to
know

• Construction of enhancement MOSFETs

• Symbols of enhancement MOSFET

• Working of enhancement MOSFET

• Drain characteristics of enhancement MOSFET

EC302.35 to 36 2
 RECAP

Mention

• The types of FETs

• MOSFET types

EC302.35 to 36 3
 ENHANCEMENT MOSFET

Al layer • A p-channel MOSFET

source consists of lightly
Gate Drain
doped n-substrate into
Si o2 layer which two heavily
------- doped p+ regions act
as the source and the
P+ +++ P+
drain.
Induced
P channel
• A thin layer of SiO2 is
N-type substrate grown over the surface
of the entire assembly..
P channel Enhancement MOSFET

EC302.35 to 36 4
 Construction
• Holes are cut into this
Al layer SiO2 layer for making
source
contact with p+ source
Gate Drain
and drain regions.
Si o2 layer
------- • On the SiO2 layer, a
P+ +++ P+
metal (alluminium) layer is
overlaid covering the
Induced
P channel entire channel region from
source to drain.
N-type substrate
• This aluminum layer
constitutes the gate.
P channel Enhancement MOSFET

EC302.35 to 36 5
 Construction • The area of MOSFET is
typically 5 square mills or
less.
Al layer • This area is extremely small
source Gate Drain being only about 5% of the
Si o2 layer area required for a bipolar
junction transistor.
------- • A parallel plate capacitor is
P+ +++ P+ formed with the metal areas
Induced of the gate and the
P channel semiconductor channel
acting as the electrodes of
N-type substrate the capacitor.
• The oxide layer acts as the
P channel Enhancement MOSFET dielectric between the
electrodes.

EC302.35 to 36 6
 symbols

D
D

substrate
G G

S S
p channel enhancement MOSFET p channel

EC302.35 to 36 7
 WORKING
Al layer • The substrate will be
source Gate Drain connected to the
Si o2 layer common terminal i.e.,
to the ground terminal.
-------
P+ +++ P+ • A negative potential will
Induced be applied to the gate.
P channel

• This results in the

N-type substrate
formation of an electric
field normal the SiO2
P channel Enhancement MOSFET layer.

EC302.35 to 36 8
 WORKING
Al layer • This electric field originates
source from the induced positive
Gate Drain
charges on the semiconductor
Si o2 layer
side on the lower surface of
------- the SiO2 layer.
P+ +++ P+
Induced
P channel• The induced positive charge
become minority carriers in
N-type substrate the
n-type of substrate.
P channel Enhancement MOSFET

EC302.35 to 36 9
Enhancement MOSFET symbols

D
D

substrate

G
G
S S

N channel N channel

EC302.35 to 36 10
WORKING • It consists of a lightly doped
source Al layer p type substrate in to which
Gate
Drain two heavily Doped n type
Si o2 layer material are diffused.
++++
N+ ------ N+
• The surface is coated with
a layer of silicon dioxide(Sio2).
Induced
N channel
• Holes are cut through the
P-type substrate Sio2 to make contact with
n-type blocks.

N channel Enhancement MOSFET

EC302.35 to 36 11
 WORKING
Al layer • Metal (Al) is deposited
source Gate
Drain through the Holes to form drain

++++ Si o2 layer
andsource terminals
N+ ------ N+
Induced
N channel • The surface area between
drain and source a metal plate
P-type substrate is deposited from which gate
terminal is taken out.
N channel Enhancement MOSFET

EC302.35 to 36 12
 •Gate is insulated from the body of
Al layer
FET so it is called insulated gate
Gate FET(IGFET).
Drain

source
++++ Si o2 layer•Structurally there exits no channel
between source
N+ ------ N+ and drain so MOSFET some times
Induced called as N-channel enhancement
N channel type

P-type substrate •Because a thin layer of P-type

substrate touching the metal oxide
N channel Enhancement MOSFET film provides channel for electrons
and hence acts like N-type
material.

EC302.35 to 36 13
 WORKING OF THE ENHANCEMENT MOSFET

• Drain is made positive with respect

Al layer to the source and no potential
is applied to the gate as shown
Drain
SOURCE
Si o2 in figure.
layer
+++ • The two n-blocks and p-type
n+ ----- n+ substrate form back to back pn
Induced junctions connected by the
n channel
Resistance of the p-type material.

p-type substrate • Both the junctions cannot be

forwarded at the Same time so
n channel Enhancement MOSFET small drain current order of
few nano amperes flows.
EC302.35 to 36 14
 WORKING OF THE ENHANCEMENT MOSFET

• So MOSFET is cut off when

gate source voltage Is zero.
Al layer

Gate Drain • That is why it is called normally-

SOURCE Si o2
layer
OFF MOSFET.
+++ • The gate is made positive with
n+ --- n+ respect to source substrate as
Induced shown in figure.
n channel
• A channel of electrons (n-
p-type substrate channel) is formed in between
the source and drain regions.

EC302.35 to 36 15
 •Behaves as a capacitor with
gate metal acting as one
electrode, upper surface of the
substrate as other electrode and
Al layer
sio2 layer as dielectric medium.
Gate DrainSi o2
SOURCE
layer
+++
n+ --- n+ •When positive voltage is applied
Induced
n channel
to gate the capacitor begin to
charge.
p-type substrate

N channel Enhancement MOSFET

EC302.35 to 36 16
 Al layer •Consequently positive
charges appears on the gate
Gate Drain
SOURCE
and negative charges appears
+++
in the substrate between
n+ --- n+
the drain and source.
Induced
n channel
•The n-channel thus formed is
p-type substrate called induced n-channel or
n-type inversion layer.
N channel Enhancement MOSFET •As VGS ,no.electrons in
the channel , ID .

EC302.35 to 36 17
• The minimum gate source voltage which produces the
induced n-channel is called threshold voltage VGS(th)
when VGS < VGS (th), ID=0.

• Drain current starts only VGS >VGS (th).

• For a given value of VDS as VGS is increased , more and

more electrons accumulate under the gate and ID
increases.

EC302.35 to 36 18
• So the conductivity of the channel is enhanced

by the positive bias on the gate, the device is

known as enhancement mode MOSFET.

• The n-channel MOSFET can never operate

with a negative gate voltage.

EC302.35 to 36 19
 • Drain characteristics
•It is observed that the drain
Id(Ma) current has been enhanced on
application of negative gate
-10
V gs=-20 voltage.
-8 •This is the reason for calling it
-16
as enhancement MOSFET.
-6
-12
•By increasing the gate
-4
potential, pinch off voltage and
drain currents are increased.
-2
•The curves are similar to drain
0 -5 -10 -15 -20 characteristics of JFET.
Vds (v)
EC302.35 to 36 20
SUMMARY

we discussed that
• In enhancement MOSFETs there is absence of channel
between source &drain terminals.

• No drain current flows in the channel without gate voltage

• The channel is enhanced by means of gate potential.

• Drain current increases with gate voltage.

EC302.35 to 36 21
QUIZ

1. Pick of the wrong statement

(c) The BJT have larger voltage gain the

JFET for same supply voltage.

(b) MOSFETs is a voltage driven device

(c) MOSFET essentially require dual polarity

power supply to turn them ON & OFF.

EC302.35 to 36 22
QUIZ

1. Which statement about MOSFET is false? It can

operate in

(A) depletion mode.

(B)enhancement mode
(C) depletion and enhancement modes
(D) depletion-only mode

EC302.35 to 36 23
• For enhancement only n-channel MOSFET, polarity of
VGS is

(A) negative
(B) positive
(C) zero.
(D) dependent the application of the device

EC302.35 to 36 24
Frequently Asked Questions

1. Draw the structural diagram of enhancement

MOSFET?
2. Draw the SYMBOLS of N- type enhancement
MOSFET?
3. Draw the SYMBOLS of p-type enhancement
MOSFET?

EC302.35 to 36 25
 Frequently Asked Questions

• Explain the working of n-channel enhancement

MOSFET.
• Explain the working of p-channel enhancement
MOSFET.
• Draw the drain characteristics of enhancement
MOSFET.

EC302.35 to 36 26