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What is CNTFET ?
A carbon nanotube field-effect transistor
(CNTFET) refers to a field effect transistor that utilizes a single carbon tube instead of bulk silicon in the MOSFET structure. This CNTFET was demonstrated in the year 1998 by Ijima
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properties like
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Fabrication of CNTFET
In the fabrication of CNTFETS we have many
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nanotube (CNT) field-effect transistors involved pre-patterning parallel strips of metal across a silicon dioxide substrate, and then depositing the CNTs on top in a random pattern.
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scanning or by microscope. 3.Then, two metals are made in contact using electron beam 4.Then ,the top gate is kept on the top nanotube
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Comparision
current per unit width at a gate overdrive of 0.6 V while MOSFET produces ~500 A/m at the same gate voltage.
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Property
Size
Carbon Nanotubes
0.6-1.8 nm in diameter
Comparatively
Si wires at least 50nm thick
Strength
45 Billion Pascals
Resilience
straightened
Conductivity
Cost
$2500/gram Houston
by
BuckyUSA
inGold is $30/gram
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1.Method is Cui et al. employed CNTFET charge storage behavior to build a non-volatile memory The memory device is stable to hold the data over a period of at least 12 days in the ambient conditions
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2.
To avoid the probability of metallic CNT, Cui et al. used two methods:
different periods)
Controlled oxygen plasma
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Better Control over channel formation. Better Threshold Voltage. Better Sub threshold slope. High Mobility. High Current density. High Trans-conductance.
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Gb/cm2 ) Small size offers faster switching speeds (100GHz ) and low power Easy to fabricate standard semiconductor process Bi stability gives well defined on & off states Nonvolatile nature no need to refresh.. Have an almost unlimited life, resistant to radiation and magnetism better than hard drive.
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10. Disadvantages
1.Lifetime (degradation), 2.Reliability, 3.Difficulties in mass
conclusion
1. CNT is a future replacement for semiconductor based
microelectronics 2. The evolution of CNTFET is discussed 3. Employing CNTFET in a lot of applications such as:
Logic circuits Memories Sensors RF circuits
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REFERENCES
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. Tans et al., Nature, vol. 393, pp. 49-52, 1998 Bach hold et al., Science, vol. 294, pp. 49-52, 2001 Wind et al., Physical Review Letters, vol. 91, no. 5, 2003 Yang et al., Applied Physical Letters, vol. 88, p. 113507, 2006 Derycke et al., Nano Letters, vol. 1, no. 9, pp. 453-456, 2001 Javey et al., Nano Letters, vol. 2, no. 9, pp. 929-932, 2002 Chen et al., Science, vol. 311, p. 1735, 2006
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Heinlein et al., Materials Science and Engineering: C, vol. 23, no. 8, pp. 663-669, 2003
Chen et al., Japanese Journal of Applied Physics, vol. 45, no. 4B, pp. 3680-3685, 2006 Na et al., Fullerenes, Nanotubes, and Carbon Nanostructures, vol. 14, pp. 141-149, 2006 Liang et al., Physica. E, low-dimensional systems and nanostructures, vol. 23, no. 1-2, pp. 232-236, 2004 Cui et al., Applied Physics Letters, vol. 81, no. 17, pp. 3260-3262, 2002 Lu et al., Applied Physics Letters, vol. 88, p. 113104, 2006 Seidel et al., Nano Letters, vol. 5, no. 1, pp. 147-150, 2005 Cui et al., Nano Letters, vol. 2, no. 2, pp. 117-120, 2002
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