Escolar Documentos
Profissional Documentos
Cultura Documentos
References
L. Ficke,M. Cahay, The bright future of organic LEDs, IEEE Potentials, Jan. 2004. J. N. Bardsley, International OLED technology roadmap, IEEE J. Selected Topics in Quantum Electronics, Vol. 10, No. 1, Feb. 2004. T. Y. Winarski, Patenting bright ideas; the current state of patented technology in the field of organic light emitting diodes, IEEE Circuits and Devices Magazine, Apr. 2004. T. Shimoda, T. Kawase, All-polymer thin film transistor fabricated by highresolution ink-jet printing, In Proceedings IEEE International Solid-State Circuits Conference, 2004. S. Forrest, P. Burrows, M. Thompson, The dawn of organic electronics, IEEE Spectrum, Aug. 2000. G. Schmid, et al., Organic electronics: perspectives towards applications, ISSCC 2004. K. Nomoto, et al., A bottom-contact organic-thin-film-transistor for flexible display application, ISSCC 2004. M. G. Kane, Organic electronics: what is it good for?, ISSCC 2004. D. Gundlach, et al., High-mobility, low voltage organic thin film transistors, IEDM 1999.
2
Outline Motivations OLED Fundamentals OTFTs Advantages of Organic Electronics Applications OLEDs for Color Displays Challenges
Motivations
Microelectronics vs. Macroelectronics:
Microelectronics: try to make smaller transistors to reduce cost and boost performance Macroelectronics: reduce costs in order build ever larger devices, with acceptable performance
Cost/area
Cost/function
Bulk Si ICs
$10K/ft2
$150/ft2
1 mcents/ transistor
$30/ft2
OLED Fundamentals
In 1987, Tang, et al. published Organic electroluminescent diodes. Currently more than 500 U.S. Patents have been issued on organic electronics. Challenges:
Choice of anode for ohmic contact (for low voltage devices) Diffusion of In, O into HTL HIL interface between ITO and HTL Protection from oxygen and water encapsulation
Cathode
Metal
ETL HTL ITO-Covered Substrate Transparent Anode
OTFT (OFET)
Typical OTFT:
Bottom gate, inverted staggered structure Pentacene (C22H14) active Gate dielectric
SiO2 PMMA PVP
OTFTs operation:
accumulation depletion
Mobilities as high as 1 cm2/Vs has been obtained with Ion/Ioff ratio of 108. Very low fabrication temperature (<60C) allows use of cheap plastics. Conventional MOSFET equations are used to model OTFTs however, mobility is voltage dependent.
W/L = 240 m/44 m Tgate= 1700 .
Applications
Flexible Displays
PM-OLED AM-OLED Wearable Displays
Sensor Arrays
Artificial Skin Gas Sensors
RF ID Tags
Inductors Capacitors
[Forrest, et al.]
9
Challenges
Choice of electrodes Encapsulation Reliability and yield Lifetime Brightness control with feedback Particle migration control with AC driver
A. Giraldo, et al.
10
Thank You