- DocumentoLabel free biosensorenviado porMamidala Jagadesh Kumar
- DocumentoQuantum Computing in Indiaenviado porMamidala Jagadesh Kumar
- DocumentoMaking Your Research Paper Discoverableenviado porMamidala Jagadesh Kumar
- DocumentoHow does the power of "Suggestion" influence students' performance?"enviado porMamidala Jagadesh Kumar
- DocumentoImpact of gate leakage considerations in tunnel field effect transistor designenviado porMamidala Jagadesh Kumar
- DocumentoCompact Analytical Model of Dual Material Gate Tunneling Field Effect Transistor using Interband Tunneling and Channel Transportenviado porMamidala Jagadesh Kumar
- DocumentoDielectric-Modulated Impact-Ionization MOS (DIMOS) Transistor as a Label-free Biosensorenviado porMamidala Jagadesh Kumar
- DocumentoDoping-less Tunnel Field Effect Transistorenviado porMamidala Jagadesh Kumar
- Documento“Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performanceenviado porMamidala Jagadesh Kumar
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- DocumentoThe malady of technology in our livesenviado porMamidala Jagadesh Kumar
- DocumentoAn academician’s reminiscences on giving interesting and effective public lecturesenviado porMamidala Jagadesh Kumar
- DocumentoInGaAs LDMOS Power Transistorsenviado porMamidala Jagadesh Kumar
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- DocumentoBipolar Charge Plasma Transistorenviado porMamidala Jagadesh Kumar
- DocumentoCan a Bipolar Junction Transistor be made without doping?enviado porMamidala Jagadesh Kumar
- DocumentoApproaches to Nanoscale MOSFET Compact Modeling using Surface Potential Based Modelsenviado porMamidala Jagadesh Kumar
- DocumentoCompact Modeling of Partially Depleted Silicon-on-Insulator Drain-Extended MOSFET (DEMOS) including High-voltage and Floating Body Effectsenviado porMamidala Jagadesh Kumar
- DocumentoNovel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistorenviado porMamidala Jagadesh Kumar
- DocumentoElectrochemical Doulbe-Layer Capacitors Featuring Carbon Nanotubesenviado porMamidala Jagadesh Kumar
- DocumentoReflections on Teaching a Large Classenviado porMamidala Jagadesh Kumar
- DocumentoEstimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliabilityenviado porMamidala Jagadesh Kumar
- DocumentoIETE Technical Review March 2010 Issueenviado porMamidala Jagadesh Kumar
- DocumentoA new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applicationsenviado porMamidala Jagadesh Kumar
- DocumentoAnalytical Drain Current Model of Nanoscale Strained-Si/SiGe MOSFETs for Circuit Simulationenviado porMamidala Jagadesh Kumar
- DocumentoNew Silicon-Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) Without PN Junctionenviado porMamidala Jagadesh Kumar
- DocumentoNew Silicon Carbide (SiC) Hetero-junction Darlington Transistorenviado porMamidala Jagadesh Kumar
- DocumentoGate-induced Barrier Field Effect Transistor (GBFET) - A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systemsenviado porMamidala Jagadesh Kumar
- DocumentoA High Current Gain Horizontal Current Bipolar Transistor (HCBT) technology for the BiCMOS integration with FinFETsenviado porMamidala Jagadesh Kumar
- DocumentoA new Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power Amplifier Applicationsenviado porMamidala Jagadesh Kumar
- DocumentoA new SiGe Stepped Gate (SSG) Thin Film SOI LDMOS for enhanced breakdown voltage and reduced delayenviado porMamidala Jagadesh Kumar
- DocumentoIETE Technical Review - Research Journal - Table of contentsenviado porMamidala Jagadesh Kumar
- DocumentoControlling Short-channel Effects in Deep Submicron SOI MOSFETs for Improved Reliabilityenviado porMamidala Jagadesh Kumar
- DocumentoTwo-Dimensional Analytical Modeling of Fully Depleted Dual-Material Gate (DMG) SOI MOSFET and Evidence for Diminished Short-Channel Effectsenviado porMamidala Jagadesh Kumar
- DocumentoNanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extensionenviado porMamidala Jagadesh Kumar
- DocumentoInvestigation of a New Modified Source/Drain for Diminished Self-heating Effects in Nanoscale MOSFETs using Computer Simulationenviado porMamidala Jagadesh Kumar
- DocumentoDiminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal Oxide Field Effect Transistors due to Induced Back-Gate Step Potentialenviado porMamidala Jagadesh Kumar
- DocumentoInvestigation of the Novel Attributes of a Single-Halo Double Gate SOI MOSFETenviado porMamidala Jagadesh Kumar
- DocumentoA New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET – Two-dimensional Analytical Modeling and Simulationenviado porMamidala Jagadesh Kumar
- DocumentoEvidence for suppressed Short-channel effects in deep Submicron Dual-Material Gate (DMG) Partially Depleted SOI MOSFETs – A Two-dimensional Analytical Approachenviado porMamidala Jagadesh Kumar
- DocumentoShOC Rectifierenviado porMamidala Jagadesh Kumar
- DocumentoSilicon-on-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performanceenviado porMamidala Jagadesh Kumar
- DocumentoRealizing wide bandgap P-SiC-emitter Lateral Heterojunction Bipolar Transistors with Low Collector-Emitter Offset Voltage and High Current Gain-A Novel Proposal using Numerical Simulationenviado porMamidala Jagadesh Kumar
- Documento2D-Simulation and Analysis of Lateral SiC N-emitter SiGe P-base Schottky Metal-collector (NPM) HBT on SOIenviado porMamidala Jagadesh Kumar
- DocumentoA New High Voltage 4H-SiC Lateral Dual Sidewall Schottky (LDSS) Rectifierenviado porMamidala Jagadesh Kumar
- DocumentoA Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performanceenviado porMamidala Jagadesh Kumar
- DocumentoEnhanced Breakdown Voltage, Diminished Quasi-saturation and Self-heating Effects in SOI Thin-Film Bipolar Transistors for Improved Reliabilityenviado porMamidala Jagadesh Kumar
- DocumentoA New High Breakdown Voltage Lateral Schottky Collector Bipolar Transistor on SOIenviado porMamidala Jagadesh Kumar