- Documentomp[1]enviado porMa Seenivasan
- DocumentoVLSI Lab Manualenviado porMa Seenivasan
- Documento1 Mosfet-1 Basicsenviado porMa Seenivasan
- DocumentoTest 3 Prob Listenviado porMa Seenivasan
- DocumentoINVERTER L-EDIT.docenviado porMa Seenivasan
- DocumentoLenviado porMa Seenivasan
- DocumentoSenviado porMa Seenivasan
- Documento4bit pipelineadderenviado porMa Seenivasan
- Documentodesign_rules.pdfenviado porMa Seenivasan
- DocumentoFull Adderenviado porMa Seenivasan
- DocumentoVLSI ENGINEER careers.docxenviado porMa Seenivasan
- DocumentoDigital Watermarkingenviado porMa Seenivasan
- DocumentoHFE0404_Hancock.pdfenviado porMa Seenivasan
- DocumentoResearch Opportunites in VLSI Testing Testability Mr. M. Jebin Vijayenviado porMa Seenivasan
- Documentosolnewpdfenviado porMa Seenivasan
- DocumentoSCMOS Layout Rules - ALL.pdfenviado porMa Seenivasan
- DocumentoMultigate Deviceenviado porMa Seenivasan
- DocumentoHci Slidesenviado porMa Seenivasan
- DocumentoSolutions Assignment 1enviado porMa Seenivasan
- DocumentoSolutions Assignment3enviado porMa Seenivasan
- DocumentoMOS Assignment 2enviado porMa Seenivasan
- DocumentoAssignment 3enviado porMa Seenivasan
- DocumentoAssignment 1enviado porMa Seenivasan
- DocumentoShort Channel Effects Notesenviado porMa Seenivasan
- DocumentoMOS.pdfenviado porMa Seenivasan
- DocumentoModelling of Power MOSFET for the Analysis of Switching Chara in Half-bridge Convertersenviado porMa Seenivasan
- DocumentoThe Superjunction Insulated Gate Bipolar Transistor Optimization and Modelingenviado porMa Seenivasan
- DocumentoThe Impact of NBTI Effect on Combinational Circuit-Modeling, Simulation, And Analysisenviado porMa Seenivasan
- DocumentoThe Electrothermal Large-Signal Model of Power MOS Transistors for SPICEenviado porMa Seenivasan
- DocumentoSwitching Process of Power MOSFETs-An Improved Analytical Losses Modelenviado porMa Seenivasan
- DocumentoSubcircuit Compact Model for Dopant-Segregated Schottky Gate-All-Around Si-Nanowire MOSFETsenviado porMa Seenivasan
- DocumentoStatistical Modeling With the PSP MOSFET Modelenviado porMa Seenivasan
- DocumentoSolving EMI-Related Problems for Reliable High-Power Converters Design With Precomputed Electromagnetic Modelsenviado porMa Seenivasan
- DocumentoPhysics, Technology, And Modeling of Complementary Asymmetric MOSFETsenviado porMa Seenivasan
- DocumentoNegative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire MOSFETs- Characteristic Modeling and the Impact on Circuit Aging.pdfenviado porMa Seenivasan
- DocumentoNanoscale 4H-SiC-On-Insulator MOSFET Using Step Doping Channelenviado porMa Seenivasan
- DocumentoModeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Applicationenviado porMa Seenivasan
- DocumentoModeling and Simulation of Charge-Pumping Characteristics for LDD-MOSFET Devices With LOCOS Isolationenviado porMa Seenivasan
- DocumentoLarge-Signal Model for Independent DG MOSFETenviado porMa Seenivasan
- DocumentoHiSIM-HV- A Compact Model for Simulation of High-Voltage MOSFET Circuitsenviado porMa Seenivasan
- DocumentoElectronic Transport in Laterally Asymmetric Channel MOSFET for RF Analog Applications.pdfenviado porMa Seenivasan
- DocumentoComparative Study of FinFET Versus Quasi-Planar HTI MOSFET for Ultimate Scalabilityenviado porMa Seenivasan
- DocumentoCompact and Distributed Modeling of Cryogenic Bulk MOSFET Operation.pdfenviado porMa Seenivasan
- DocumentoAnalytical Phase-Noise Modeling and Charge Pump Optimization for Fractional-N PLLsenviado porMa Seenivasan
- DocumentoA Physics-Based 3D Analytical Model for RDF-Induced Vth Variationsenviado porMa Seenivasan
- DocumentoChapter 4enviado porMa Seenivasan
- DocumentoA Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate N-MOSFETs With Different Surface and Channel Orientations—Part I-Fundamental Principlesenviado porMa Seenivasan
- DocumentoA Compact Model for Undoped Symmetric Double-Gate Polysilicon Thin-Film Transistorsenviado porMa Seenivasan
- DocumentoA Compact Model for Threshold Voltage of Surrounding-Gate MOSFETs With Localized Interface Trapped Chargesenviado porMa Seenivasan