ECE-E434

Digital Electronics
Instructor: Pouya Dianat
 ECE-E434
Digital Electronics
Syllabus

Text book: Microelectronic Circuits, 7th edi@on, Sedra/Smith

•  Review of MOSFETs à Chapter 5

•  CMOS Digital Logic Circuits à Chapter 14
•  Gate-logic circuits
•  Inverters
•  Dynamic OperaHons: PropagaHon Delay
•  Transistor Sizing
•  Power ConsideraHon
•  Advanced Digital IC Design à Chapter 15
•  Memory Circuits à Chapter 16
•  Latches and Flip-flops
•  RAMs (StaHc and Dynamic), ROMs, etc.
•  CMOS image sensor
•  VLSI FabricaHon Technology à Appendix A
 ECE-E434
Digital Electronics
Syllabus

GRADING:

•  Homework: %10 à Know what you are wriHng down.
•  Lab work: %25
•  Midterm: %15
•  Term Project: %20
•  Final: %30
•  Quiz: %5 extra à No loss of points
OFFICE HOURS:

•  Tuesdays and Thursdays 9:30-10:30am – Bossone 505
•  Email: psd32@drexel.edu

Ask lots of ques@ons;

Be engaged in the lecture.
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

Metal-Oxide-Semiconductor (MOS) Field Effect Transistors

(MOSFETs)

•  Gate can be metal or a highly conducHve semiconductor e.g. a highly doped poly-
silicon
•  Two back-to-back diodes at pn juncHons of source and drain to the channel
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  Vt is called the threshold voltage. It is the minimum gate voltage to induce a

channel at the gate.
•  Vov is the over drive voltage. It is any gate voltage applied in excess of the
threshold voltage.
•  Ques@on: How to find/design/calculate the threshold voltage?
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  The metal-oxide-substrate form a parallel plate capacitor: Cox

•  Charge at the interface, Q, is equal to:

 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  The source-drain current when vDS is small becomes:

Design factors
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  What happens when vDS is no more small but vDS<VOV:

•  Channel becomes non-uniform

•  The depth of the channel is modulated with vDS (it decreases closer to the Drain)
•  Resistance of the channel increases.
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  What happens when vDS is no more small but vDS>VOV:

•  Channel is pinched off.

•  The depth of the channel is no more modulated with vDS
•  The source-drain current becomes independent of vDS
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  NMOS summary:
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  Current-Voltage characterisHcs of an NMOS for various vGS

•  You will repeat/simulate these curves in Lab 1.
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  A p channel FET, or PMOS

•  The substrate has an n-type doping.
•  The drain and source are p+ doped.
•  The operaHon is similar to an NMOS.
•  A major disadvantage: small hole mobility, µp, for holes à Larger channel
resistance.
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  PMOS summary:
 ECE-E434
Digital Electronics
Review of MOSFETs – Ch. 5

•  A Complementary MOS (CMOS) combines an NMOS and a PMOS together.

•  More complicated to fabricate/process on a wafer
•  But provides more versaHlity for circuit (digital or analog) design.
•  It is gradually replacing technologies based on BJTs.