SOFT SWITCHING

CHAVEAMENTO POR TENSO ZERO ZVS

CHAVEAMENTO POR CORRENTE NULA - ZCS

Copyright by John Wiley & Sons 2003 MOSFETs - 1

CHAVEAMENTO POR TENSO NULA ZVS

Copyright by John Wiley & Sons 2003 MOSFETs - 2

CHAVEAMENTO POR CORRENTE NULA ZCS

Copyright by John Wiley & Sons 2003 MOSFETs - 3

MOSFETs de Potncia Transistor de Efeito de Campo com Tecnologia Metal e xido de Silcio

Operao fsica de um MOSFET Caractersticas de chaveamento Fatores que limitam as especificaes de operao

Copyright by John Wiley & Sons 2003 MOSFETs - 4

Estrutura Fsica de um MOSFET

body-source short source gate conductor field oxide gate oxide

N+ P (body) N(drift region)

N+

N+ P (body) i N+
drain channel length

N+

parasitic BJT

integral diode

1. BJT parasita BJT. Mantido no bloqueio pelo curto-circuito do corpo-fonte 2. Diodo em anti-parelalo. Formado do BJT parasita. 3. Matalizao do gate e dreno. 4. Diviso da fonte em pequenas reas conectadas em paralleo. 5. Camada N menos dopada. Determina a mxima tenso de bloqueio.
Copyright by John Wiley & Sons 2003 MOSFETs - 5

Caracterstica Esttica e Smbolos

i D
ohmic V GS5 active V GS4 [v - V GS = v ] GS(th) DS

actual

V GS3

linearized

GS2

V GS1

< GS

v
GS(th) BV DSS

DS

V GS(th)
D

v GS

G G N-channel MOSFET S P-channel MOSFET

Copyright by John Wiley & Sons 2003 MOSFETs - 6

O Efeito de Campo - Operao

V GG1

SiO

+ + + + + + + + +
V GG3

+ +

N P N

ionized acceptors

depletion layer boundary

+ + + + + + + + +

SiO

+ +

V GG2

P
+ + + + + + + + +
ionized acceptors

SiO

+ +

inversion layer with free electrons

N P N

N
ionized acceptors free electrons depletion layer boundary

depletion layer boundary

Copyright by John Wiley & Sons 2003 MOSFETs - 7

Operao MOSFET

GG

+
DD1

D1

V ox (x) N + V (x) CS x P N N +
inversion depletion

Copyright by John Wiley & Sons 2003 MOSFETs - 8

rea de Operao Segura - MOSFET

log ( i) D

DM 10 -5 sec

10 -4sec T j,max 10 -3 sec

DC

BV

DSS log ( v ) DS

Copyright by John Wiley & Sons 2003 MOSFETs - 9

Transistor Bipolar com Gate Isolado - IGBT

Construo e caracterstica V-I Funcionamento do IGBT

Copyright by John Wiley & Sons 2003 MOSFETs - 10

Estrutura Fsica IGBT

gate emitter SiO 2 J 3 N + P N+ N + P collector Buffer layer (not essential) N +

J 2

Ls

J - Unique feature of IGBT 1 Parasitic thyristor

Copyright by John Wiley & Sons 2003 MOSFETs - 11

Caracterstica V-I e Smbolos

i
increasing V

C
v GE4

GE

No Buffer Layer VRM BV CES With Buffer Layer V 0 RM V

v GE3 v

v
GE2

GE

GE(th)

v GE1

Transfer curve
v CE

RM

Output characteristics
drain

BV

CES
collector

gate
gate

N-channel IGBT circuit symbols

source

emitter
Copyright by John Wiley & Sons 2003 MOSFETs - 12

Anlise do Bloqueio - IGBT

gate emitter SiO 2 J 3 N + P N +

J 2 N

Ls

+ N + P J - Unique feature of IGBT 1 collector Parasitic thyristor Buffer layer (not essential)

Copyright by John Wiley & Sons 2003 MOSFETs - 13

Conduo do IGBT
gate emitter + +

P
lateral (spreading) resistance

N -

N + + + +

+ + collector + + + +

Copyright by John Wiley & Sons 2003 MOSFETs - 14

Circuitos Equivalentes - IGBT

Conduction path resulting in thyristor turn-on (IGBT latchup) if current in this path is too large J1 collector

drift region resistance

V V drift

gate gate I R C channel Principal (desired) path of collector current

Body region spreading resistance

emitter

Copyright by John Wiley & Sons 2003 MOSFETs - 15