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Wet Chemical Etching for V-grooves into InP Substrates
J. Wang, D. A. Thompson, and J. G. Simmons
Center for Electrophotonic Materials and Devices and Department of Engineering Physics, McMaster University,
Hamilton, Ontario L8S 4L7, Canada
ABSTRACT
A systematic study has been performed on t he production of V-grooves i n (100) InP substrates b y wet chemical etch-
ing. The dissolution process and its dependence on etchant, etch mask, and its accuracy of alignment relative t o t he [Ol l ]
or [Oil] directions has been analyzed. Consequently, t he conditions necessary t o achieve V-grooves having (111)A, (111)B,
and (211)A sidewalls has been established.
Introduction
InP-based devices are playing important roles i n optical
telecommunication, microwave, high-speed digital, and
- -
analog applications; however, t he technology isvrelatively
immature compared t o that of GaAs. Chemical etching is
an essential step i n device processing and needs t o be well
understood and controlled i n order that features of well-
defined geometry can be fabricated. Recently there has
been interest i n t he possibility of producing quantum wire
(QWR) lasers using epitaxial growth on V-groove etched
Here t he morphology and geometry of groove
profiles critically af f ect s t he final growth o f quant um
structures.
V-groove etching, as a specific example o f preferential
etching, i s attributed t o crystallographic structure: i n par-
ticular, i f t he etching is not diffusion-controlled i t depends
on t he configuration of surface atoms and t he bond struc-
t ~ r e . ~ I t i s those crystal planes wi t h slowest etch rate that
determine t he etch profile. Most commonly, V-grooves
etched into 111-V semiconductors have ( 1 11)A, (1 11)B, or
(211)A Both wet chemical etching5-' and dry
chemical etchinglo-" can be used t o make V-grooves. Until
now almost all V-grooves used for QWR fabrication have
been obtained wi t h wet chemical etching, whi ch is simple,
flexible, and less equipment demanding t han dry etching.
Recently PC1, gas has been used t o etch InP i n a molecular
beam epitaxy (MBE) chamber, and channels containing
( O l l ) , (1 11)A, and ( 1 1 l ) B facets, and V-shape-like grooves,
have been produced. However, a close examination of t he
sharpness of t he groove bottom has not been reported.lO,"
Preferential wet etching of 111-V compounds, including
InP, has been studied for many year^.'^^'^^'"^^ However, little
work has been reported on etching t o produce sharp
V-grooves wi t h smooth sidewalls as required for QWR fab-
ri cat i ~n. ~-' . ' ~ Huo et a1.6-8 studied groove profiles etched on
InP using HC1-based solutions and Wang et al.' reported the
ef f ect of native oxide on mask undercutting of V-grooves,
but no detailed information has been provided on t he
sharpness or t he profiles at the bottoms of t he V-grooves.
Recently, Kappelt and Bimberg15 reported (1 11)A V-grooves
wi t h sharp bottoms and smooth sidewalls using a three-
step etching process. In this work we report on etching
experiments using different etchants, and mask materials
for grooves aligned [ O l l ] and [ O l l ] , as well as having di f -
ferent degrees of mask misalignment relative t o t he [ O l l ] or
[ oi l ] directions. Also, t he etching processes and their de-
pendence on surface orientation are analyzed. Based on
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