GESEP – Ger cia de Especialistas e Siste as El tricos de Pot cia

Título:
Characterizaion of solar panel using capaciive load
Autores:
BRITO, ERICK M. DA S. ; ANTONIO, ADRIANO DA S. ; CUPERTINO, ALLAN F. ; PEREIRA, HEVERTON A.
Pu li ado em:
th IEEE/IAS Internaional Conference on Industry Applicaions INDUSCON 4
Data da pu li ação:
4
Citação para a versão pu li ada:
BRITO, ERICK M. DA S. ; ANTONIO, ADRIANO DA S. ; CUPERTINO, ALLAN F. ; PEREIRA, HEVERTON A. .
Characterizaion of solar panel using capaciive load. In: 4 th IEEE/IAS Internaional Conference on
Industry Applicaions INDUSCON 4, 4, Juiz de Fora. 4 th IEEE/IAS Internaional Conference
on Industry Applicaions, 4. p. .
 Characterization of Solar Panel Using Capacitive
Load
Erick M. da S. Brito1, Adriano da S. Antônio1, Allan F. Cupertino1,2,3 and Heverton A. Pereira1,2

1
Gerência de Especialistas em Sistemas Elétricos de Potência 2
Departamento de Engenharia de Materiais
Universidade Federal de Viçosa Centro Federal de Educação Tecnológica de Minas Gerais
Av. P. H. Rolfs s/nº, 36570-000 Av. Amazonas 5253, 30421-169
Viçosa, MG, Brazil Belo Horizonte, MG, Brazil
erick.brito@ufv.br, adrianocoy@hotmail.com allan.cupertino@yahoo.com.br
3
Graduate Program in Electrical Engineering
Federal University of Minas Gerais
Av. Antônio Carlos 6627, 31270-901
Belo Horizonte, MG, Brazil
hevertonaugusto@yahoo.com.br

Abstract—This work aims to design and assembly a
characterization of solar panel using capacitive load. This device
provides information that allows the user to increase the
efficiency of power generation in photovoltaic systems. Detection
of operation issues or abnormal conditions such as partial
shading caused by dirt or objects can affect adversely the
maximum power point. Simulation results were used to validate
the model and allowed the development of the device. Tests were
realized with the prototype in a panel of 48 W. Measured results
present accuracy when compared with the simulated results
validating the prototype.
I. INTRODUCTION
Search for electrical sources with low environmental impact
is boosting renewable and alternative energy. Among them,
photovoltaics systems has more focus nowadays because they
do not generate pollutants, they do not emit sounds and require
low maintenance [1]. Furthermore, photovoltaic panels can also
be placed on existing buildings, being installed on facades,
roofs and walls of buildings, residential and rural areas [2]. This
type of power generation has accelerated its growth around the
year 2000 and is the third alternative source of electrical
generation of global installed power counting on approximately
130 GW in 2013, losing only for hydroelectric and wind
sources [3].
Efficiency of a photovoltaic panel is defined as maximum
power generated divide by product of the input irradiance and
its area. This conversion efficiency depends on many factors,
such as irradiance, temperature and shades on panel’s surface
[4]. This influences can be seen on characteristics curves of
solar panels as usually known as I-V and P-V curves. They
provide informations the detection of possible array anomalies,
such as disconnected subarrays, broken cells, shading mismatch
and so on [5].
In photovoltaic arrays, cells are conventionally connected in
series to obtain the desired voltage. In higher voltage
applications, bypass diodes may be placed across groups of
cells to prevent mismatched or shaded cells conditions from
inhibiting production of power by rest of the array [6].
photovoltaic arrays applications are often subject to partial
shading and rapidly changing shadow conditions caused by tree
branch moviments, animals and leafless dejects, snow
accumulation and so on. Therefore, bypass diode allows the
photovoltaic arrays to continue in operation even in shaded
situations [7] [8].
Characteristics curves of a photovoltaic module or array are
an important key for identifying its quality and performance as
function of varying environmental parameters. Curve indicates
characteristic parameteres of the photovoltaic panel represented
in short circuit current, open circuit voltage and point of
maximum power which generator works at efficiency peak [9].
Therefore, measure characteristics curves with high accuracy
under natural environmental conditions is really important.
Characterizer based on capacitive load is one of the most
accurate method for tracing I-V and P-V curves. This method
consists on charging a capacitor since photovoltaic’s short
circuit to open circuit and collect current and voltage measures.
An assemby of a microcontroller and a gate driver circuit are
used to switch two IGBTs in order to connect and disconnect
capacitor from panel in charging and discharging processes.
Microcontroller also comunicates with a remote computer
where an interface is used to show obtained results.
 II. METHODOLOGY voltage reaches the open circuit value. In this situation, no
In order to trace characteristic curves of the solar panels, current flows through the load.
capacitive load based method was used in this project. Panel Temperature and irradiance on the panel are considered
charges capacitor initially discharged until its open circuit constant during all charging process. Therefore, current can
voltage. As proper characteristic of its component, current of be considered constant. Using Kirchhoff’s Laws on Fig. 3,
the capacitor varies due to voltage variations during the time of following differential equations are obtained:
charging process. Initially the value of the current is equal to
panel short circuit’s current and as the voltage on capacitor’s
terminals increases, value of this current decreases up to zero
when capacitor is totally charged. When charging process is
finished, I-V curve can be traced. Fig. 1 shows capacitor current
and voltage evolution as function of time.

Figure 3. Simplified equivalent circuit model for a solar panel connected to

a capacitive load [11].

(1)
=
Figure 1. Capacitor current and voltage evolution as function of time [5]. ∙ + − + =0 (2)

Fig. 2 shows the circuit of the curve characterizer. Resistor These equations are valid only when diode is not
R is used to discharge capacitor. Therefore, new data conducting, represented by the voltage interval:
acquisitions can be done.

+ ∙ ≤ (3)

Replacing (1) in (2) and doing some math arrangements:

= (4)
( − ) ∙( + )

Figure 2. Circuit used in capacitor charging and dischargin process [10].

Solving differential equation in (4), the voltage response in
A microcontroller and a gate driver circuit are responsible function of time is represented in (5). Specified time when
for switch the IGBT’s. They active both semiconductor devices the capacitor reaches the open circuit voltage of the solar panel
in an alternate way. When one of them are in conduction, other can be calculated by replacing V(t) for :
is opened and vice-versa. Gate driver has a dead time that (5)
avoids two IGBTs to be in conduction at the same time. ( )= 1−

(6)
A. Charging Process =− + ∙ 1−
When IGBT1 is in conduction and IGBT2 is opened, the
solar panel charges the capacitor. Analyzing the simplified
equivalent circuit of solar panel represented on Fig. 3, current
and voltages can be related by means of differential equations. In this simplified model, is proportional of the value of
and are respectively series and parallel resistances of the capacitance. Furthermore, when decreases, necessary
sampling frequency of the characterizer increases.
panel. In this model, voltage source equal to allows the
Microcontroller used in this work has sampling frequency set
diode, considered ideal, to start conducting when the load
to 6 kHz. Considering this device provides a curve with 100
points, total sampling time 16,67. Therefore, needs to be
less than 16,67 ms. In this project, a capacitor of 1 mF/ 25 V
was chosen which gives = 7,945 ms.
B. Discharging Process
When capacitor is fully charged, it needs to discharge.
After this step, other data acquisitions can be done. A
resistance R is used when IGBT2 starts conducting and IGBT1
is openned. The time taken by the capacitor to discharge on R
is approximately five times the constant of time of the
capacitor in a RC circuit: Figure 5. Circuit of the voltage sensor.

≅5∙ (7) The resistances and are responsible for lowering the
voltage up to a maximum value of 5 V supported by the
microcontroller entrance pins. The operational amplifier has a
For a R equal to 100 the time when the capacitor is buffer function in order to increase impedance of this sensor
completely discharged is 0,5 s. and so it will not interfere on data acquisition. Zener diode has
protection function. If operational amplifier has an output
C. Gate Driver voltage higher than 5 V the zener will start conducting and will
avoid this voltage to damage the microcontroller input pins.
The integrated circuit IR2104 is often used on half bridge
For the current sensor, the integrated circuit ACS712 was
frequency inverters. This gate driver triggers the IGBTs one
used. This dispositive gives a value of voltage according to the
after other with a dead time between each activation so both
value of current flows in the sensor. Relation voltage current is
semiconductor devices will never be in conduction at the same
almost linear and its theoretical curve is given by:
time. Fig. 4 represents the behavior of inputs and outputs of the
IR2104.
= 0.2 + 2.5 (8)
When input IN is high, HO follows IN and LO is the
opposite. is an enable input and it has to be high so the gate The curves obtained by the solar characterizer were plotted
drive circuit can work. on an interface developed on Matlab’s Guide tool. This
interface shows the I-V, P-V curves and indicates the voltage
and current that provides the maximum power of the situation
analyzed by the characterizer. There is also a save button
which is possible to save all data logs of the curves.

Figure 4. Input and output evolution for IC IR2104 [12].

D. Data acquisition
Voltage and current sensors were used to obtain the points
of the characteristic curves. The voltage sensor is shown in Fig.
5. Figure 6. Interface in operation.

The tests were realized using the photovoltaic solar panel

SM-48SKM from Kyocera manufacturer, whose main
parameters on standard test conditions are shown in Tab. 1.
This panel has a maximum power of 48 W for an incident
solar irradiance of 1000 W/m² and 25 °C. It weighs
approximately 4.5 kg and it dimensions are 56 cm high, 68 cm
wide and 3.8 cm thick.
 TABLE I. MAIN PARAMETERS OF SOLAR PANEL The current sensor has a theoretical linear curve represented
Parameter Symbol Value by (8) but with some experimental results it was noticed that in
fact this sensor has a nonlinear behavior for a current value
Maximum Power (W) 48 between zero and 3 A. Fig. 9 shows the experimental curve and
Maximum Power Voltage (V) 18.6 a polynomial interpolation done in order to get close to it real
Maximum Power Current (A) 2.59 curve. Although the approximation can be considered
satisfactory, there’re are still some divergences in current data
Open Circuit Voltage (V) 22.1
acquisitions that will reduce the characterization accuracy.
Short Circuit Current (A) 2.89
3
Temperature Coefficient of (V/K) -0.070
Temperature Coefficient of 2.5
1.66
(mA/K)
2
Resistance Series 0.214
Resistance Parallel 108.93 1.5

1
III. RESULTS
0.5
In the first step, a simulation with a theoretical solar panel
block based on mathematical model were performed using the 0
2.5 2.6 2.7 2.8 2.9 3 3.1 3.2
software Matlab in order to validate the device.
Figs 7 and 8 show that the strategy simulated has high Figure 9. Real curve and polynomial interpolation curve for current sensor.
accuracy to track solar panel characteristic curves. The next
step was build the prototype shown in Fig. 10. The tests were
done at July 17 of 2014 at Federal University of Viçosa, Brazil
between 12 am and 1 pm. Fig 9 and 10 show the position of the
solar panel tested and the interface in operation.
3
1000 W /m²
800 W /m²
2.5
600 W /m²
400 W /m²
2
Current (A)

1.5

0.5

0
0 5 10 15 20 25 Figure 10. Prototype buit for solar characterization.
Voltage (V)

Figure 7. I-V curve for different vallues of irradiance.

50
1000 W/m²
800 W /m²
40
600 W /m²
400 W /m²
30
Power (W)

20

10

0
0 5 10 15 20 25
Voltage (V)

Figure 8. P-V curve for different vallues of irradiance. Figure 11. Position of solar panel tested.
 Tests had intention to trace characteristic curves on normal value is next to 1V. Other interesting fact is shown in Fig.
condition operation and shading operational conditions. 15 and 16 when during the test something shaded the
Therefore, some partial shadows on solar panel were tested and panel causing a degree reduction on current and power
interface operator can observe differences on curves behavior value.
and notice there are something limiting the efficiency of the
panel.
2.5

1.5

0.5

0
0 5 10 15 20
Figure 15. I-V curve for partial shadow operation at 12h31.
Figure 12. I-V curve for normal condition operation at 12h13.

Figure 16. P-V curve for partial shadow operation at 12h31.

Figure 13. P-V curve for normal condition operation at 12h13. Other test made was to shade just one cell of the panel as
shown in Fig. 20. This panel has 36 cells connected in series
and two bypass diodes each one connected to a half part of the
panel as shown on Fig. 17.

Figure 14. Solar panel tested on normal conditions.

In normal conditions shown in Fig. 14, the Fig. 12 and

13 provide characteristic curves next to the expected
behavior of solar panels. Low value of maximum power
is caused by a low irradiance at the test moment. In all
tests, the first point has a voltage value higher than zero
and the short-current circuit could not be plotted. This fact
is due to the voltage loss on IGBT in conduction and its
Figure 17. Solar panel’s cells connected to bypass diodes.
If one cell burns or stop working the bypass diode connected
to its half part of the panel start conducting so it can short
circuits this half and leave the other in operation. This way, if
some undue shadow occurs, the panel still works, but with its
performance approximately halved. Results are illustrated on
Fig. 18 and 19 when we can see the action of bypass diode for
one cell shaded.

2.5

1.5

0.5

0
0 5 10 15 Figure 21. I-V curve for a row of cells shadowed at 12h35.

Figure 18. I-V curve for one cell shadowing operation at 12h33.

Figure 22. P-V curve for a row of cells shadowed at 12h35.

Figure 19. P-V curve for one cell shadowing operation at 12h33.

Figure 23. Solar panel tested with a row of cells shadowed.

Figure 20. Solar panel tested with one cell shadowed.

In order side, if a row of cells are shaded like at Fig. 23 both
bypass diodes start conducting and no current flows throw the
load. This kind of results can be seen on Fig. 21 and 22 where
the value of current and power is next to zero.
IV. CONCLUSION
This work designed and assembled a solar panel
characterization using capacitive loads. The prototype built was
able to collect current and voltage data and trace I-V and P-V
curves and show them on an computational interface where the
operator can see the efficiency of the panel and its maximum
power on weather conditions it was tested.
 The results indicate a good accuracy for the curves Allan Fagner Cupertino received the B.S. degree
compared to its simulation results. In addition, the influence of in electrical engineering from the Federal
University of Viçosa (UFV), Viçosa, Brazil, in
the weather conditions on solar panel efficiency was analyzed. 2013. He is integrant of GESEP, where developed
Tests in shading operational conditions were also performed works about power electronics applied in
and it was possible to see the action of bypass diodes allowing renewable energy systems. Currently he is Master
the panel continue in operation even if some parts of it are student from Federal University of Minas Gerais
shaded. (UFMG), Belo Horizonte, Brazil. He has been with
the Department of Materials Engineering of
REFERENCES CEFET- MG, Brazil.
His research interests include solar photovoltaic, wind energy, control
applied in power electronics.
[1] Q. Zhang, X. Sun, Y. Zhong e M. Matsui, A novel topology for solving
the partial shading problem in photovoltaic power generation system. Heverton Augusto Pereira received the B.S.
degree in electrical engineering from the Federal
[2] F. P. Gasparin, Análise de Efeitos Transientes na Caracterização
University of Viçosa (UFV), Viçosa, Brazil, in
Elétrica de Módulos Fotovoltaicos, Porto Alegre: UFRS, 2012.
2007, the M.S. degree in electrical engineering
[3] EPIA, “Global Market Outlook For Photovoltaics” European from the State University of Campinas
Photovoltaic Industry Association, 2014-2018. (UNICAMP), Campinas, Brazil, in 2009.
[4] E. Durán, M. Pillougine, M. Sidrach-de-Cardona, J. Galán e J. M. Currently he is Ph.D. student from the Federal
Andújar, “Different Methods to Obtain The I-V Curve of Pv Modules: A University of Minas Gerais (UFMG), Belo
Review,” IEEE, 2008. Horizonte, Brazil. Since 2009 he has been with the
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[5] J. Muñoz e E. Lorenzo, “Capacitive load based on IGBTs for on-site
His research interests are wind power, solar energy and power quality.
characterization pf PV arrays,” IEEE, 2006.
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BIOGRAPHIES
Erick Matheus da Silveira Brito received the
B.S. degree in electrical engineering from the
Federal University of Viçosa (UFV), Viçosa,
Brazil, in July, 2014. He is a member of GESEP,
where developed works and researches about
power electronics applied on renewable energy
systems and solar energy technology. He
participated in the Project Interchange Brazil-
France in Institut National Polytechnique de
Lorraine (Nancy-France) at 2012-2013. Currently he is Master student
from Federal University of Viçosa (UFV), Viçosa, Brazil.

Adriano da Silva Antônio was born in Viçosa,

Brazil. He joined the Electrical Engineering
course at the Federal University of Viçosa (UFV)
in 2008. Participant of the Project Interchange
Brazil-France in Institut National Polytechnique
de Lorraine (Nancy - France) 2011-2012 . He is
integrant of GESEP, where developed works
about solar energy.