Apostila de Laboratorio de Eletronica Analogica - Completa PDF

Centro de Educação Profissional Irmão Mário Cristóvão
Curso Técnico em Mecatrônica

Disciplina de Eletrônica Analógica
Apostila de Laboratório de Eletrônica Analógica

Prof. Marcelo do C.C. Gaiotto.
Aluno:________________________________________ Turno:_____________
Centro de Educação Profissional Irmão Mário Cristóvão Laboratório de Eletrônica Analógica
EXPERIÊNCIA 1
Objetivos:
Conhecer os equipamentos utilizados para efetuar as práticas;
Iniciar as práticas em circuitos com diodo retificador e diodo zener.
Comprovar o funcionamento dos diodos na 1 e 2 aproximações.
Tempo de Execução: ____ aulas
Desenvolvimento
Equipamentos e materiais necessários:
3 - diodos 1N4007 – por aluno;

1 - diodo Zener de 5V1/500mW – por aluno;
10 - resistores de 1K de 1/8W;
1 - potenciometro de 10K – por aluno;
1 - placa de montagem com pontes de terminais para cada aluno;
2 - multímetro analógico ou digital;
2 - ferro de solda;
1 - Fonte Analógica Tektronix;
* - Solda;
2 - suporte para ferro de solda;
* - Cabos banana-banana e banana- garra;
1) Para cada um dos circuitos (1, 2, 3, 4, 5, 6, 7 e 8), calcule as correntes e

tensões nos resistores com os diodos em 1 e 2 aproximações.
2) Somente após o cálculo monte os circuitos na placa de pontes de terminais;
3) Realize as medidas de tensão sobre os resistores e os diodos, também e nos

pontos indicados para cada circuito procurando preencher com cuidado a sua
tabela.(Ex: VAB)
4) Monte e identifique quais são as funções Lógicas dos circuitos 9 e 10.
Relatório:
Fazer relatório detalhado (1 por Aluno) mostrando todas as características e
conclusões observadas nesta experiência, entregando-o na data estabelecida.
2
Desenvolvimento do Circuito 1 – Cálculos
Tabela do Circuito 1
Valor de Valor de Valor Valor de
Tensão Corrente de Corrente
Calculado Calculada Tensão Medida
em 2 em 2 Medida (A)
Aproximação Aproximação (V)
(V) (A)
R1
D1
3
(V) (A)
R1
D1
4
(V) (A)
R1
R2
R3
D1
5
(V) (A)
R1
R2
R3
D1
6
(V) (A)
R1
R2
R3
D1
D2
D3
VAB
7
(V) (A)
R1
D1
Com a fonte em 0V, Observe o que acontece quando você aumenta a
tensão em passos de 0,5V até o valor máximo de 10V. Anote suas
observações!
8
(V) (A)
R1
D1
Com a fonte em 0V, Observe o que acontece quando você aumenta a tensão
em passos de 0,5V até o valor máximo de 10V. Anote suas observações!
9
(V) (A)
R1
D1
Observe o que acontece quando você varia o potenciômetro. Anote suas
observações!
10
Circuito 9
A B Saída
Coloque as combinações Binárias e observe o que acontece na saída. Anote suas

observações!
Circuito 10
A B Saída
Coloque as combinações Binárias e observe o que acontece na saída. Anote suas

observações!
11
Protocolo de recebimento de Relatório – esta parte fica no caderno de Laboratório
Relatório Recebido em : ______/______/______
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________
Cortar aqui
----------------------------------------------
Esta parte deve ser anexada no relatório.
Aluno:___________________________________________________ Turno: _____________
1. Circuito 1: ____________________________________________ Visto:_______
2. Circuito 2: ____________________________________________ Visto:_______
3. Circuito 3: ____________________________________________ Visto:_______
4. Circuito 4: ____________________________________________ Visto:_______
5. Circuito 5: ____________________________________________ Visto:_______
6. Circuito 6: ____________________________________________ Visto:_______
7. Circuito 7: ____________________________________________ Visto:_______
8. Circuito 8: ____________________________________________ Visto:_______
9. Circuito 9: ____________________________________________ Visto:_______
10. Circuito 10:____________________________________________Visto:_______
12
EXPERIÊNCIA 2
Objetivos:
Iniciar as práticas de retificadores.
Comprovar o funcionamento dos retificadores com e sem filtros
capacitivos.
Desenvolvimento
1 - transformador de 12V+12V ou 9V+9V;
1 - osciloscópio analógico;
1 - placa de montagem com pontes de terminais; (de cada equipe)
1 - multímetro digital MINIPA;
1 - suporte para ferro de solda;
1) Medir as formas de onda da saída de calibração do osciloscópio,
apresentando os ajustes de Volts/Div. dos canais 1 e 2, Time/Div. E ajustes
das pontas de prova. Apresente ainda a freqüência e a tensão pico-a-pico.
2) Medir e apresentar as formas de onda do secundário do transformador
apresentando os valores para: Freqüência, Período, Tensão pico a pico, e
tensão RMS.
3) Implementar um circuito retificador de meia onda, anotando as formas de onda
de entrada, saída e seus valores de pico;
4) Testar o circuito montado anteriormente com capacitores eletrolíticos de 10,
100, e 1000uF, e anotar as formas de onda da tensão de saída;
5) Implementar um circuito retificador de onda completa com 2 diodos, anotando
as formas de onda de entrada, saída e seus valores de pico;
7) Implementar um circuito retificador de onda completa em Ponte (4 diodos),
anotando as formas de onda de entrada, saída e seus valores de pico;
*obs: utilizar um resistor de carga para os retificadores de 1K.
Relatório:
Fazer relatório detalhado (1 por Aluno) mostrando todas as características e conclusões
observadas nesta experiência, entregando-o na data estabelecida.
13
Projeto ponto de calibração do osciloscópio: ____________ Visto Projeto:___________
Escala Volts/DIV
Canal1:____________Ponta de Prova:_____
Escala Time/DIV
TIME/DIV:_____________
Observações
14
Projeto transformador e osciloscópio Visto Projeto:___________
Escala Volts/DIV
Escala Time/DIV
TIME/DIV:_____________
Observações
15
Projeto:_________________________________________________ Visto Projeto:___________
Escala Volts/DIV
Escala Time/DIV
TIME/DIV:_____________
Observações
16
Escala Volts/DIV Escala Volts/DIV

Canal1:_____________Ponta de Prova:_____ Canal1:_____________Ponta de Prova:_____
Escala Time/DIV Escala Time/DIV
TIME/DIV:_____________ TIME/DIV:_____________
Observações
17
Escala Volts/DIV
Canal1:_____________Ponta de
Prova:_____
Prova:_____
Escala Time/DIV
TIME/DIV:_____________
Observações
18

TIME/DIV:_____________ TIME/DIV:_____________
Observações
19
Escala Volts/DIV
Prova:_____
Prova:_____
Escala Time/DIV
TIME/DIV:_____________
Observações
20

TIME/DIV:_____________ TIME/DIV:_____________
Observações
21
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________
Cortar aqui
----------------------------------------------
Aluno:___________________________________________________ Turno: _____________
1. Projeto:_______________________________________________Visto:_______
2. Projeto:_______________________________________________Visto:_______
3. Projeto:_______________________________________________Visto:_______
4. Projeto:_______________________________________________Visto:_______
5. Projeto:_______________________________________________Visto:_______
6. Projeto:_______________________________________________Visto:_______
7. Projeto:_______________________________________________Visto:_______
8. Projeto:_______________________________________________Visto:_______
22
EXPERIÊNCIA 3
Objetivos:
Aprender como interpretar os dados da especificação técnica do
fabricante;
Comprovar o funcionamento dos ceifadores polarizados.
Desenvolvimento
1 – Gerador de Funções;
1 – Fonte Analógica Tektronix;
2 – Pontas de prova para osciloscópio;
1 – Osciloscópio analógico;
2 – Diodos de sinal 1N4148
1 – Resistor de 1K
1 – Placa de montagem com pontes de terminais; (de cada equipe)
1 – Multímetro digital MINIPA;
1 – Suporte para ferro de solda;
1. Implemente o seguinte circuito Ceifador polarizado.
Siga o seguinte procedimento para o circuito acima:

1. Ajuste o canal 1 do osciloscópio em AC;
2. Ajuste o canal 2 do osciloscópio em DC;
3. Selecione a forma de onda do gerador como Senoidal;
4. Conecte o gerador de funções no canal 1 do osciloscópio e ajuste a
freqüência para 1KHz;
5. Agora, ajuste a amplitude do gerador para fornecer 15Volts de pico-a-pico;
6. Conecte o gerador de funções na entrada do circuito indicada como Vi
juntamente com o canal 1 do osciloscópio (respeite a indicação de + e - );
7. Conecte o canal 2 do osciloscópio na saída do circuito indicada como Vo;
8. Explicar teoricamente o funcionamento para justificar os resultados de saída;
9. Troque a forma de onda para Triangular;
11. Troque a forma de onda para quadrada;
13. Inverta a polaridade da fonte V1 e realize novamente os itens 1 – 6 – 7 – 8 – 9
– 10, para este novo circuito.
23
Escala Volts/DIV
Prova:_____
Prova:_____
Escala Time/DIV
TIME/DIV:_____________
Observações
24

TIME/DIV:_____________ TIME/DIV:_____________
Observações
25
Escala Volts/DIV
Prova:_____
Prova:_____
Escala Time/DIV
TIME/DIV:_____________
Observações
26

TIME/DIV:_____________ TIME/DIV:_____________
Observações
27
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________
Cortar aqui
----------------------------------------------
Aluno:___________________________________________________ Turno: _____________
1) Projeto:_______________________________________________ Visto:_______
2) Projeto:_______________________________________________ Visto:_______
3) Projeto:_______________________________________________ Visto:_______
4) Projeto:_______________________________________________ Visto:_______
5) Projeto:_______________________________________________ Visto:_______
6) Projeto:_______________________________________________ Visto:_______
28
EXPERIÊNCIA 4
Objetivos:
fabricante;
Comprovar o funcionamento dos Grampeadores e Multiplicadores.
Desenvolvimento
1 – Osciloscópio analógico;
2 – Diodos 1N4004 ou 1N4007
2 – Capacitores eletrolíticos de 1000uF/25V ou maior
1 – Resistor de 1K
1 – Placa de montagem com pontes de terminais; (de cada equipe)
1 – Suporte para ferro de solda;
1. Implemente o seguinte circuito Grampeador.

1. Ajuste o canal 1 do osciloscópio em AC;
2. Ajuste o canal 2 do osciloscópio em DC;
3. Conecte o canal 1 do osciloscópio na saída do transformador que está sendo
utilizada e o canal 2 na saída do circuito indicada como Vout;
4. Explique teoricamente o funcionamento para justificar os resultados de saída,
identificando qual é o tipo de grampeador (positivo ou negativo);
29
2. Implemente o seguinte circuito Multiplicador:

1. Ajuste o canal 1 do osciloscópio em DC – cuidado só utilize o canal 1 – ;
2. Conecte o canal 1 do osciloscópio na saída do circuito indicada como Vout;
3. Explique teoricamente o funcionamento para justificar os resultados de saída,
identificando qual é o tipo de multiplicador (meia onda ou onda completa);
Relatório:
Fazer relatório detalhado (1 por Aluno) mostrando todas as características e conclusões
observadas nesta experiência, entregando-o na data estabelecida.
30

TIME/DIV:_____________ TIME/DIV:_____________
Observações
31
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________
Cortar aqui
----------------------------------------------
Aluno:___________________________________________________ Turno: _____________
1) Projeto:_______________________________________________ Visto:_______
2) Projeto:_______________________________________________ Visto:_______
32
EXPERIÊNCIA 5
Objetivos:
fabricante;
Iniciar o trabalho com transistores como chave.
Desenvolvimento
1 – Fonte Analógica;
1 – Multímetro;
1 – Placa de Pontes de Terminais da EQUIPE;
* - Resistores diversos e demais componentes da EQUIPE;
* - Cabos banana jacaré da EQUIPE.
1) Considerando o circuito abaixo, calcule e realize as medidas pedidas:
a) Medir o ganho do transistor no multímetro (hFE = beta) e anotar o valo na

tabela;
b) Para efeito de cálculo considerar VBE = 0,7V e VBB = Vi (podendo ser 0V
e 5V);
c) Calcular a corrente IC e IB através das formulas:
IC VBB − VBE
β= e IB = ;
IB Rb
d) Com o ponto Vi em 5V: medir as tensões VBE e VCE;

e) Com o ponto Vi em GND: medir as tensões VBE e VCE;
f) Com o ponto Vi em 5V: medir as correntes de base (IB) e do coletor (IC);
g) Com o ponto Vi em GND: medir as correntes de base (IB) e do coletor (IC);
h) Comparar com as correntes e tensões teóricas calculadas respectivamente
e anotar as conclusões justificando-as;
33
2) Considerando o circuito abaixo, calcule e realize as medidas pedidas:
Figura: acionamento direto do relé.
a) Medir a corrente de acionamento do Relé para acionamento direto;

b) Utilizar o valor do ganho do transistor (hFE = beta) da experiência anterior;
c) Para efeitos de cálculo da polarização, considerar VBE = 0,7V e VBB =
12V;
d) Calcular a corrente IC e IB através das formulas:
IC VBB − VBE
β= e IB = ;
IB Rb
e) Implementar o circuito de acionamento com transistor;
Acionamento com transistor
f)Com o ponto Vin em 12V: medir as tensões VBE e VCE;

g)Com o ponto Vin em GND: medir as tensões VBE e VCE;
h)Com o ponto Vin em 12V: medir as correntes de base (IB) e do coletor (IC);
i)Com o ponto Vin em GND: medir as correntes de base (IB) e do coletor
(IC);
j) Comparar com as correntes e tensões teóricas calculadas respectivamente
e anotar as conclusões justificando-as;
Relatório:
Fazer relatório detalhado (1 por aluno) mostrando todas as características e

conclusões observadas nesta experiência, entregando-o na data estabelecida
para esta turma.
34
Desenvolvimento do Circuito – Cálculos
Tabela do Circuito
Ganho do transistor Bc =
Vin = 12V Vi = GND
IC calculado
IB calculado
IC medido
IB medido
VCE medido
VBE medido
Observações
35
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________
Cortar aqui
----------------------------------------------
Aluno:___________________________________________________ Turno: _____________
1) Projeto:_______________________________________________ Visto:_______
2) Projeto:_______________________________________________ Visto:_______
36
EXPERIÊNCIA 6
Objetivos:
fabricante;
Iniciar o trabalho com transistores como AMPLIFICADORES
Desenvolvimento:
1 – Fonte Analógica;
1 – Osciloscópio Digital;
1 – Multímetros;
1 – Placa de Pontes de Terminais da EQUIPE;
• Cabos banana jacaré da EQUIPE;
• Componentes diversos da EQUIPE.
1) Considerando o circuito a seguir, calcule os resistores de polarização e realize

as medidas pedidas com os seguintes dados: iB = 250µA, VCC = 12V e VBB =
2V. Utilize as formulas propostas para realização dos cálculos.
a) Com o circuito alimentado corretamente e sem conectar o gerador de

funções e o osciloscópio, medir a corrente IC;
b) Conecte o canal 1 do osciloscópio no gerador de funções e ajuste a
freqüência para 1KHz, com forma de onda senoidal;
c) Conecte o gerador de funções juntamente com o canal 1 do
osciloscópio à entrada do circuito (Vin) com seu ajuste de amplitude
em ZERO;
d) Conecte o canal 2 do osciloscópio na saída do circuito indicada como
Vout.
e) Comece a aumentar a amplitude do gerador até obter o melhor sinal de
saída amplificado, e sem distorção;
f) Anotar os valores corretos de amplitude encontrados;
g) Desenhar a forma de onda do canal 1 (Vin) e canal 2 (Vout) do
osciloscópio (entrada e saída respectivamente);
h) Mantendo o valor da amplitude encontrado, aumente gradativamente a
freqüência no gerador de funções até obter uma redução do ganho de
saída do amplificador em 70,7% do valor máximo obtido no item f;
Relatório:
Fazer relatório detalhado (1 por aluno) mostrando todas as características e

conclusões observadas nesta experiência, entregando-o na data estabelecida
para esta turma.
37
Circuito de polarização por divisor de tensão na base
Desenvolvimento do Circuito – Cálculos

R1 R 2
RB =
R1 + R 2
R2
V BB = 12
R1 + R 2
V BB
IB =
RB
R L = 3,3 k Ω
R E = 1k Ω
Observações dos cálculos
38

TIME/DIV:_____________ TIME/DIV:_____________
Observações das medidas
39
Aluno:___________________________________________________ Turno: _____________
Professor:________________________________________________
Cortar aqui
----------------------------------------------
Aluno:___________________________________________________ Turno: _____________
1) Projeto:_______________________________________________ Visto:_______
40
ANEXO – Material de apoio
41
PROJETO DA FONTE REGULADA VERSÃO 2
FONTEC
Curso Técnico em Mecatrônica

Disciplina de Eletrônica Analógica
Prof. Marcelo do C. C. Gaiotto
43
Funcionamento
O primeiro passo para construção de uma fonte de alimentação é saber qual a

tensão de saída que se deseja ter. Neste projeto de fonte possuímos 2 tensões, 1
regulada e uma fixa de 5V/1A. A tensão regulada será aborda mais à frente.
Como a rede elétrica possui sua tensão eficaz muito mais alta que a grande
maioria dos equipamentos eletrônicos opera, necessitamos de um componente
que reduza este valor de tensão alternada. Como estamos considerando uma
fonte de alimentação linear utilizaremos um transformador, para realizar este
serviço. O Diagrama em blocos da figura 1 representa esta seqüência.
Figura 1. Diagrama de blocos de acoplamento com transformador.
Toda fonte de alimentação de corrente contínua possui um bloco de

retificação. A configuração utilizada no bloco retificador é do tipo retificador de
onda completa com dois diodos (D1 e D2). Este é responsável em tornar a
tensão alternada entregue pelo transformador em contínua, ou seja, elimina a
mudança de polaridade da tensão. Vejamos agora como fica esta alteração no
diagrama da figura 2.
Figura 2. Diagrama de blocos da etapa de retificadores.
Embora a tensão de saída do retificador seja contínua, ela ainda é pulsada,

ou seja, muda de zero até o valor máximo. Para que esta oscilação (RIPPLE) não
prejudique o funcionamento nem os componentes de um circuito que possa ser
conectado nesta fonte devemos inserir uma nova etapa, a etapa de filtragem, que
será composta pelo capacitor eletrolítico (C1). O novo diagrama de blocos está
apresentado na figura 3.
Figura 3. Diagrama de blocos com a etapa de filtragem.
44
Este projeto possui ainda capacitores cerâmicos adicionados ao circuito para

aumentar o coeficiente de filtragem.
Até este ponto não temos novidades e dificuldades quanto à configuração e
funcionamento. Para possibilitar a variação da tensão de saída de forma regulada
e controlada utilizamos uma etapa reguladora, como por exemplo, a do diagrama
em blocos da figura 4.
Figura 4. Diagrama de blocos da etapa de Regulagem.
O circuito regulador de tensão utilizado para desempenhar esta função é o

LM317. Este possibilita o acionamento de uma carga com consumo de até 1,5A
em sua saída. Repare que a saída do regulador possui um capacitor eletrolítico,
possibilitando uma segunda filtragem, tornando nossa saída mais estável. O
diagrama em blocos da parte regulada da fonte é apresentado na figura 5.
Figura 5. Diagrama em blocos da parte regulada da fonte.
O circuito básico de configuração do regulador utilizado foi extraído das folhas

de dados dos fabricantes que estão em anexo neste manual.
A fonte fixa é composta por outro regulador de tensão LM317, porém com
seus resistores de ajuste fixos para que a tensão em sua saída seja de 5V, e
também um capacitor eletrolítico após o regulador, possibilitando uma segunda
filtragem, tornando nossa saída mais estável, como é desejável para qualquer
circuito de alimentação para circuitos digitais da família TTL.
1. Procedimentos para cálculos dos resistores das fontes reguladas
Podemos alterar as características de nossa fonte se calcularmos os valores

dos resistores que realizam a configuração do regulador, utilizando a seguinte
fórmula fornecida pelo fabricante:
Pot
Vout = Vref * (1 + ) + ( IADJ * P 2)
R1
45
Onde:
Vo- tensão de saída ;
Iadj – corrente de ajuste.
POT – Valor do potenciômetro utilizado.
Através deste cálculo, podemos alterar o valor de tensão máximo que o

regulador apresentará em sua saída. Este procedimento deve ser realizado com
bastante cuidado e atenção, pois serão necessárias alterações de componentes do
circuito como:
• Adequar os Capacitores eletrolíticos – tensão de operação;

• Transformador – tensão e corrente de saída para o valor que se
deseja trabalhar, levando em consideração as quedas de tensão dos
componentes envolvidos (***calcular o transformador***)
• Fusível – redimensionar o fusível para o novo circuito;
• Re-projetar placa se for necessário;
Esquema elétrico da fonte da FonTec V2.
46
Esquema de ligação do fusível, da chave de seleção de tensão, da chave

liga/desliga ao transformador e a rede elétrica.
Placa de Circuito impresso da fonte de tensão vista dos componentes, não

invertida e fora da medida real.
Placa de Circuito impresso da fonte de tensão vista dos componentes com as

trilhas, não invertida e fora da medida real.
47
Exemplo de Caixa de montagem Patola PB209 e PB211.
Exemplo de disposição dos itens do painel frontal.

(não está em tamanho real é apenas um exemplo)
Exemplo de disposição dos itens do painel traseiro.

(não está em tamanho real é apenas um exemplo)
49
Lista de componentes da Fonte Regulada FONTEC V2
Loja:_______________________________ Fone:____________________
Atendente:___________________________________
QTD DESCRIÇÃO DOS COMPONENTES E MATERIAIS Preço

unitário R$
1 Transformador de 110V/220V de primário, 15V+15V / 1A à 2A
1 placa de fenolite face simples de 50x100 (mm)
2 LM317
2 Capacitores cerâmicos de 100nF
2 diodos retificadores 1N5404
2 diodos retificadores 1N4004
1 chave HH com marcação 110/200V
1 chave de alavanca 3 contatos e duas posições
1 capacitor eletrolítico de 2200uF/50V
2 capacitor eletrolítico de 2200uF/25V
1 borne para painel vermelho
1 borne para painel preto
1 borne para painel amarelo
1 porta fusível para painel pequeno
1 fusível de 500mA pequeno
1 rabicho para alimentação
1 Knob
1 potenciômetro de 4K7 ou 5K
5 pés de borracha pequenos para colar
2 dissipadores DM830
½ metro de fio Preto 22
½ metro de fio vermelho 22
1 led vermelho 5mm
1 Suporte para led de 5mm para painel
1 caixa para montagem patola PB209 ou PB 211 preta
1 resistor de 1K
2 resistor de 270R
1 resistor de 680R
2 resistor de 120R
8 Parafusos M3x10 cabeça cônica
18 Porcas para parafuso M3
6 Arruelas para parafuso M3
Total dos componentes
50
1N4001, 1N4002, 1N4003,
1N4004, 1N4005, 1N4006,
1N4007
1N4004 and 1N4007 are Preferred Devices
Axial Lead Standard

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220°C Max. for 10 Seconds, 1/16″ from case AXIAL LEAD
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• Available in Fan–Fold Packaging, 3000 per box, by adding a “FF” AL
suffix to the part number 1N
400x
• Polarity: Cathode Indicated by Polarity Band YYWW
• Marking: 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, AL = Assembly Location
1N4007 1N400x = Device Number
x = 1, 2, 3, 4, 5, 6 or 7
YY = Year
WW = Work Week
MAXIMUM RATINGS
Rating Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit
*Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
*Non–Repetitive Peak Reverse Voltage VRSM 60 120 240 480 720 1000 1200 Volts
(halfwave, single phase, 60 Hz)
*RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 Volts
*Average Rectified Forward Current IO 1.0 Amp
(single phase, resistive load,
60 Hz, TA = 75°C)
*Non–Repetitive Peak Surge Current IFSM 30 (for 1 cycle) Amp
(surge applied at rated load
conditions)
Operating and Storage Junction TJ –65 to +175 °C
Temperature Range Tstg
*Indicates JEDEC Registered Data
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Preferred devices are recommended choices for future use

and best overall value.
 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

March, 2001 – Rev. 7 1N4001/D
1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007
ELECTRICAL CHARACTERISTICS*
Rating Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage Drop vF 0.93 1.1 Volts
(iF = 1.0 Amp, TJ = 25°C)
Maximum Full–Cycle Average Forward Voltage Drop VF(AV) – 0.8 Volts
(IO = 1.0 Amp, TL = 75°C, 1 inch leads)
Maximum Reverse Current (rated dc voltage) IR µA
(TJ = 25°C) 0.05 10
(TJ = 100°C) 1.0 50
Maximum Full–Cycle Average Reverse Current IR(AV) – 30 µA
(IO = 1.0 Amp, TL = 75°C, 1 inch leads)
ORDERING & SHIPPING INFORMATION

Device Package Shipping
1N4001 Axial Lead 1000 Units/Bag
1N4001FF Axial Lead 3000 Units/Box
1N4001RL Axial Lead 5000/Tape & Reel
http://onsemi.com
2
1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59–03
ISSUE M
B NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D
K MILLIMETERS INCHES
DIM MIN MAX MIN MAX
F A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107
D 0.71 0.86 0.028 0.034
A F --- 1.27 --- 0.050
K 27.94 --- 1.100 ---
F
K
http://onsemi.com
3
1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment: CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
P.O. Box 5163, Denver, Colorado 80217 USA Email: ONlit–spanish@hibbertco.com
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Email: ONlit–german@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Email: ONlit–french@hibbertco.com Phone: 81–3–5740–2700
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EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 For additional information, please contact your local
*Available from Germany, France, Italy, UK, Ireland Sales Representative.
http://onsemi.com 1N4001/D
4
1N4148 / 1N4448
FAST SWITCHING DIODE
Features
· Fast Switching Speed
· General Purpose Rectification A B A
· Silicon Epitaxial Planar Construction
C
Mechanical Data D
· Case: DO-35 DO-35
· Leads: Solderable per MIL-STD-202,
Dim Min Max
Method 208
· Polarity: Cathode Band A 25.40 ¾
· Marking: Type Number B ¾ 4.00
· Weight: 0.13 grams (approx.) C ¾ 0.60
D ¾ 2.00
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified

Characteristic Symbol 1N4148 1N4448 Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 75 V
DC Blocking Voltage VR
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current (Note 1) IFM 300 500 mA
Average Rectified Output Current (Note 1) IO 150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0s 1.0
IFSM A
@ t = 1.0ms 2.0
Power Dissipation (Note 1) 500 mW
Pd
Derate Above 25°C 1.68 mW/°C
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 300 K/W
Operating and Storage Temperature Range Tj , TSTG -65 to +175 °C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition

Maximum Forward Voltage 1N4148 ¾ 1.0 IF = 10mA
1N4448 VFM 0.62 0.72 V IF = 5.0mA
1N4448 ¾ 1.0 IF = 100mA
5.0 mA VR = 75V
Maximum Peak Reverse Current IRM ¾
50 mA VR = 70V, Tj = 150°C
30 mA VR = 20V, Tj = 150°C
25 nA VR = 20V
Capacitance Cj ¾ 4.0 pF VR = 0, f = 1.0MHz
IF = 10mA to IR =1.0mA
Reverse Recovery Time trr ¾ 4.0 ns
VR = 6.0V, RL = 100W
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
DS12019 Rev. B-2 1 of 2 1N4148 / 1N4448

1000
10,000
IF, INSTANTANEOUS FORWARD CURRENT (mA)
100
1000
IR, LEAKAGE CURRENT (nA)

10
100
1.0
10
0.1
VR = 20V
1
0.01
0 100 200
0 1 2
Tj, JUNCTION TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2, Leakage Current vs Junction Temperature
Fig. 1 Forward Characteristics
DS12019 Rev. B-2 2 of 2 1N4148 / 1N4448

BC548 / BC548A / BC548B / BC548C
Discrete POWER & Signal
Technologies
BC548
BC548A
BC548B
BC548C
E TO-92
B
C
NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 30 V
VCES Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 500 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units

BC548 / A / B / C
PD Total Device Dissipation 625 mW
Derate above 25°C 5.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
 1997 Fairchild Semiconductor Corporation 548-ABC, Rev B

BC548 / BC548A / BC548B / BC548C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 30 V
V(BR)CES Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 30 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collector Cutoff Current VCB = 30 V, IE = 0 15 nA
VCB = 30 V, IE = 0, TA = +150 °C 5.0 µA
ON CHARACTERISTICS
hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA 548 110 800
548A 110 220
548B 200 450
548C 420 800
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.25 V
IC = 100 mA, IB = 5.0 mA 0.60 V
VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA 0.58 0.70 V
VCE = 5.0 V, IC = 10 mA 0.77 V
SMALL SIGNAL CHARACTERISTICS

hfe Small-Signal Current Gain IC = 2.0 mA, VCE = 5.0 V, 125 900
f = 1.0 kHz
NF Noise Figure VCE = 5.0 V, IC = 200 µA, 10 dB
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
BC327/328
BC327/328
Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
1 TO-92
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC327 -50 V
: BC328 -30 V
VCEO Collector-Emitter Voltage
: BC327 -45 V
: BC328 -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -800 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0
: BC327 -45 V
: BC328 -25 V
BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0
: BC327 -50 V
: BC328 -30 V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICES Collector Cut-off Current
: BC327 VCE= -45V, VBE=0 -2 -100 nA
: BC328 VCE= -25V, VBE=0 -2 -100 nA
hFE1 DC Current Gain VCE= -1V, IC= -100mA 100 630
hFE2 VCE= -1V, IC= -300mA 40
VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V
VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 100 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF
hFE Classification
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60- 100- 170-
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002

BC327/328
Typical Characteristics
-500 -20
µA
- 80
IB= µA
- 70
mA I =
IC[mA], COLLECTOR CURRENT
- 5.0 A

I B = - 4.5m
B
µA P
-400 -16 - 60 T =6
I B = 4.0mA IB= 00
mW
- A
I B = - 3.5m A µA
I B = - 3.0m A - 50
I B = - 2.5m IB=
-300 IB = mA -12 µA
- 2.0 - 40
IB =
mA
IB=
1.5
IB = -
30µA
-200 -8
IB = -
IB = - 1.0mA PT = 60
0mW
0µA
IB = - 2
IB = - 0.5mA
-100
-4
IB = - 10µA
IB = 0
-0 IB = 0
-1 -2 -3 -4 -5
-10 -20 -30 -40 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 -10
PULSE
IC = 10 IB
PULSE
V CE = - 2.0V
hFE, DC CURRENT GAIN
V CE(sat)
100 -1
- 1.0V
10 -0.1
V BE(sat)
1 -0.01
-0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage
-1000 1000
VCE = -5.0V
fT[MHz], GAIN-BANDWIDTH PRODUCT
VCE = -1V
PULSE
-100
-10 100
-1
-0.1 10
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -10 -100
VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product

BC327/328
Package Dimensions
TO-92
+0.25
4.58 –0.15
4.58 ±0.20
0.46 ±0.10
14.47 ±0.40
+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]
3.60 ±0.20
3.86MAX
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
(R2.29)
Dimensions in Millimeters

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic™
E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
EnSigna™ I2C™ OCX™ RapidConfigure™ UHC™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation Rev. I1

MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
GENERAL
500 mW DO-35 Glass DATA
Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN
500 mW
THIS GROUP DO-35 GLASS
500 Milliwatt
GLASS ZENER DIODES
Hermetically Sealed 500 MILLIWATTS
1.8–200 VOLTS
Glass Silicon Zener Diodes
Specification Features:
• Complete Voltage Range — 1.8 to 200 Volts
• DO-204AH Package — Smaller than Conventional DO-204AA Package
• Double Slug Type Construction
• Metallurgically Bonded Construction
Mechanical Characteristics:
CASE 299
CASE: Double slug type, hermetically sealed glass
DO-204AH
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from GLASS
case for 10 seconds
FINISH: All external surfaces are corrosion resistant with readily solderable leads
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea
MAXIMUM RATINGS (Motorola Devices)*

Rating Symbol Value Unit
DC Power Dissipation and TL ≤ 75°C PD
Lead Length = 3/8″ 500 mW
Derate above TL = 75°C 4 mW/°C
Operating and Storage Temperature Range TJ, Tstg – 65 to +200 °C
* Some part number series have lower JEDEC registered ratings.
0.7
PD , MAXIMUM POWER DISSIPATION (WATTS)
HEAT
0.6 SINKS
0.5
0.4
3/8” 3/8”
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
Motorola TVS/Zener Device Data 500 mW DO-35 Glass Data Sheet

6-97
GENERAL DATA — 500 mW DO-35 GLASS
APPLICATION NOTE — ZENER VOLTAGE
θ JL , JUNCTION-TO-LEAD THERMAL RESISTANCE (°C/W)

Since the actual voltage available from a given zener diode 500
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order 400
to calculate its value. The following procedure is recom-
L L
mended:
Lead Temperature, TL, should be determined from: 300
TL = θLAPD + TA. 2.4–60 V

200
θLA is the lead-to-ambient thermal resistance (°C/W) and PD is
the power dissipation. The value for θLA will vary and depends 62–200 V
on the device mounting method. θLA is generally 30 to 40°C/W 100
for the various clips and tie points in common use and for
printed circuit board wiring.
0
The temperature of the lead can also be measured using a 0 0.2 0.4 0.6 0.8 1
thermocouple placed on the lead as close as possible to the tie L, LEAD LENGTH TO HEAT SINK (INCH)
point. The thermal mass connected to the tie point is normally
Figure 2. Typical Thermal Resistance
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea- 1000
sured value of TL, the junction temperature may be deter- 7000
5000 TYPICAL LEAKAGE CURRENT
mined by:
AT 80% OF NOMINAL
TJ = TL + ∆TJL. 2000 BREAKDOWN VOLTAGE
∆TJL is the increase in junction temperature above the lead 1000
700
temperature and may be found from Figure 2 for dc power: 500
∆TJL = θJLPD.
200
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ(∆TJ) may be estimated. Changes in 100
70
voltage, VZ, can then be found from: 50
I R , LEAKAGE CURRENT ( µ A)
∆V = θVZTJ.
20
θVZ, the zener voltage temperature coefficient, is found from
10
Figures 4 and 5. 7
Under high power-pulse operation, the zener voltage will 5
vary with time and may also be affected significantly by the
2
zener resistance. For best regulation, keep current excursions
as low as possible. 1
0.7
Surge limitations are given in Figure 7. They are lower than 0.5
would be expected by considering only junction temperature, +125°C
as current crowding effects cause temperatures to be ex- 0.2
tremely high in small spots, resulting in device degradation 0.1
should the limits of Figure 7 be exceeded. 0.07
0.05
0.02
0.01
0.007 +25°C
0.005
0.002
0.001
3 4 5 6 7 8 9 10 11 12 13 14 15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current
500 mW DO-35 Glass Data Sheet Motorola TVS/Zener Device Data

6-98
TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
100
θVZ , TEMPERATURE COEFFICIENT (mV/ °C)

+12
70
+10 50
+8 30
+6 20
RANGE VZ @ IZ (NOTE 2)
+4 10
7
+2
5
RANGE VZ @ IZT
0 (NOTE 2) 3
–2 2
–4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts Figure 4b. Range for Units 12 to 100 Volts
200 +6
VZ @ IZ
180 +4 TA = 25°C
160 +2
20 mA
140 0
0.01 mA
VZ @ IZT 1 mA
120 –2
(NOTE 2) NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
100 –4
120 130 140 150 160 170 180 190 200 3 4 5 6 7 8
Figure 4c. Range for Units 120 to 200 Volts Figure 5. Effect of Zener Current
1000 100
TA = 25°C 70
500 TA = 25°C
0 V BIAS 50
0 BIAS
200 30
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
100 20
1 V BIAS
50 1 VOLT BIAS
10
20 7
50% OF VZ BIAS
10 50% OF 5
VZ BIAS
5 3
2
2
1 1
1 2 5 10 20 50 100 120 140 160 180 190 200 220
Figure 6a. Typical Capacitance 2.4–100 Volts Figure 6b. Typical Capacitance 120–200 Volts

6-99
100
70 RECTANGULAR
Ppk , PEAK SURGE POWER (WATTS)
50 11 V–91 V NONREPETITIVE WAVEFORM

TJ = 25°C PRIOR TO
30 5% DUTY CYCLE 1.8 V–10 V NONREPETITIVE INITIAL PULSE
20
10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
PW, PULSE WIDTH (ms)

Figure 7a. Maximum Surge Power 1.8–91 Volts
1000 1000
700 500 TJ = 25°C
500 VZ = 2.7 V
iZ(rms) = 0.1 IZ(dc)

RECTANGULAR
300 WAVEFORM, TJ = 25°C ZZ , DYNAMIC IMPEDANCE (OHMS) 200
f = 60 Hz
200
47 V
100 100
70 27 V
50 100–200 VOLTS NONREPETITIVE 50
30
20 20
10 10 6.2 V
7
5 5
3
2 2
1 1
0.01 0.1 1 10 100 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
PW, PULSE WIDTH (ms) IZ, ZENER CURRENT (mA)
Figure 7b. Maximum Surge Power DO-204AH Figure 8. Effect of Zener Current on
100–200 Volts Zener Impedance
1000 1000
700 TJ = 25°C
MAXIMUM
ZZ , DYNAMIC IMPEDANCE (OHMS)
500 iZ(rms) = 0.1 IZ(dc) 500

f = 60 Hz MINIMUM
IZ = 1 mA
I F , FORWARD CURRENT (mA)
200 200
100 100
70 5 mA
50 50
20 20 mA 20 75°C
10 10
7 25°C
5 5 150°C
2 0°C
2
1 1
1 2 3 5 7 10 20 30 50 70 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)
Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. Typical Forward Characteristics

6-100
20
10
TA = 25°
I Z , ZENER CURRENT (mA)
0.1
0.01
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VZ, ZENER VOLTAGE (VOLTS)
Figure 11. Zener Voltage versus Zener Current — VZ = 1 thru 16 Volts
10
TA = 25°
0.1
0.01
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30

6-101
10
I Z , ZENER CURRENT (mA) TA = 25°
0.1
0.01
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
10
0.1
0.01
110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260

6-102
ELECTRICAL CHARACTERISTICS (TA = 25°C, VF = 1.5 V Max at 200 mA for all types)
Nominal Maximum Maximum Reverse Leakage Current
Zener Voltage Test Maximum Zener Impedance DC Zener Current
T
Type VZ @ IZT Current ZZT @ IZT IZM TA = 25°C TA = 150°C
Number (Note 2) IZT (Note 3) (Note 4) IR @ VR = 1 V IR @ VR = 1 V
(Note 1) Volts mA Ohms mA µA µA
1N4370A 2.4 20 30 150 100 200
1N4371A 2.7 20 30 135 75 150
1N4372A 3 20 29 120 50 100
1N746A 3.3 20 28 110 10 30
1N747A 3.6 20 24 100 10 30
1N748A 3.9 20 23 95 10 30
1N749A 4.3 20 22 85 2 30
1N750A 4.7 20 19 75 2 30
1N751A 5.1 20 17 70 1 20
1N752A 5.6 20 11 65 1 20
1N753A 6.2 20 7 60 0.1 20
1N754A 6.8 20 5 55 0.1 20
1N755A 7.5 20 6 50 0.1 20
1N756A 8.2 20 8 45 0.1 20
1N757A 9.1 20 10 40 0.1 20
1N758A 10 20 17 35 0.1 20
1N759A 12 20 30 30 0.1 20
Nominal Maximum Zener Impedance Maximum

Zener Voltage Test (Note 3) DC Zener Current Maximum Reverse Current
Type VZ Current IZM
Number (Note 2) IZT ZZT @ IZT ZZK @ IZK IZK (Note 4) IR Maximum Test Voltage Vdc
(Note 1) Volts mA Ohms Ohms mA mA µA VR
1N957B 6.8 18.5 4.5 700 1 47 150 5.2
1N958B 7.5 16.5 5.5 700 0.5 42 75 5.7
1N959B 8.2 15 6.5 700 0.5 38 50 6.2
1N960B 9.1 14 7.5 700 0.5 35 25 6.9
1N961B 10 12.5 8.5 700 0.25 32 10 7.6
1N962B 11 11.5 9.5 700 0.25 28 5 8.4
1N963B 12 10.5 11.5 700 0.25 26 5 9.1
1N964B 13 9.5 13 700 0.25 24 5 9.9
1N965B 15 8.5 16 700 0.25 21 5 11.4
1N966B 16 7.8 17 700 0.25 19 5 12.2
1N967B 18 7 21 750 0.25 17 5 13.7
1N968B 20 6.2 25 750 0.25 15 5 15.2
1N969B 22 5.6 29 750 0.25 14 5 16.7
1N970B 24 5.2 33 750 0.25 13 5 18.2
1N971B 27 4.6 41 750 0.25 11 5 20.6
1N972B 30 4.2 49 1000 0.25 10 5 22.8
1N973B 33 3.8 58 1000 0.25 9.2 5 25.1
1N974B 36 3.4 70 1000 0.25 8.5 5 27.4
1N975B 39 3.2 80 1000 0.25 7.8 5 29.7
1N976B 43 3 93 1500 0.25 7 5 32.7
1N977B 47 2.7 105 1500 0.25 6.4 5 35.8
1N978B 51 2.5 125 1500 0.25 5.9 5 38.8
1N979B 56 2.2 150 2000 0.25 5.4 5 42.6
1N980B 62 2 185 2000 0.25 4.9 5 47.1

6-103
Nominal Maximum Zener Impedance Maximum

Zener Voltage Test (Note 3) DC Zener Current Maximum Reverse Leakage Current
Type VZ Current IZM
Number (Note 2) IZT ZZT @ IZT ZZK @ IZK IZK (Note 4) IR Maximum Test Voltage Vdc
(Note 1) Volts mA Ohms Ohms mA mA µA VR
1N981B 68 1.8 230 2000 0.25 4.5 5 51.7
1N982B 75 1.7 270 2000 0.25 4.1 5 56
1N983B 82 1.5 330 3000 0.25 3.7 5 62.2
1N984B 91 1.4 400 3000 0.25 3.3 5 69.2
1N985B 100 1.3 500 3000 0.25 3 5 76
1N986B 110 1.1 750 4000 0.25 2.7 5 83.6
1N987B 120 1 900 4500 0.25 2.5 5 91.2
1N988B 130 0.95 1100 5000 0.25 2.3 5 98.8
1N989B 150 0.85 1500 6000 0.25 2 5 114
1N990B 160 0.8 1700 6500 0.25 1.9 5 121.6
1N991B 180 0.68 2200 7100 0.25 1.7 5 136.8
1N992B 200 0.65 2500 8000 0.25 1.5 5 152
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION NOTE 3. ZENER IMPEDANCE (ZZ) DERIVATION
Tolerance Designation ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
The type numbers shown have tolerance designations as follows: applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
1N4370A series: ±5% units, C for ±2%, D for ±1%. NOTE 4. MAXIMUM ZENER CURRENT RATINGS (IZM)
1N746A series: ±5% units, C for ±2%, D for ±1%.
Values shown are based on the JEDEC rating of 400 mW. Where the actual zener voltage
1N957B series: ±5% units, C for ±2%, D for ±1%.
(VZ) is known at the operating point, the maximum zener current may be increased and is
limited by the derating curve.
NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in thermal equilibrium at the lead
temperature of 30°C ±1°C and 3/8″ lead length.

6-104
Low level oxide passivated zener diodes for applications re- • Zener Voltage Specified @ IZT = 50 µA
quiring extremely low operating currents, low leakage, and • Maximum Delta VZ Given from 10 to 100 µA
sharp breakdown voltage.
ELECTRICAL CHARACTERISTICS (TA = 25°C, VF = 1.5 V Max at IF = 100 mA for all types)
Zener Voltage Maximum Test
Maximum Maximum
VZ @ IZT = 50 µA Reverse Current Voltage
Type Zener Current Voltage Change
Volts IR µA VR Volts
Number IZM mA ∆ VZ Volts
(Note 1) Nom (Note 1) Min Max (Note 3) (Note 2) (Note 4)
1N4678 1.8 1.71 1.89 7.5 1 120 0.7
1N4679 2 1.9 2.1 5 1 110 0.7
1N4680 2.2 2.09 2.31 4 1 100 0.75
1N4681 2.4 2.28 2.52 2 1 95 0.8
1N4682 2.7 2.565 2.835 1 1 90 0.85
1N4683 3 2.85 3.15 0.8 1 85 0.9
1N4684 3.3 3.135 3.465 7.5 1.5 80 0.95
1N4685 3.6 3.42 3.78 7.5 2 75 0.95
1N4686 3.9 3.705 4.095 5 2 70 0.97
1N4687 4.3 4.085 4.515 4 2 65 0.99
1N4688 4.7 4.465 4.935 10 3 60 0.99
1N4689 5.1 4.845 5.355 10 3 55 0.97
1N4690 5.6 5.32 5.88 10 4 50 0.96
1N4691 6.2 5.89 6.51 10 5 45 0.95
1N4692 6.8 6.46 7.14 10 5.1 35 0.9
1N4693 7.5 7.125 7.875 10 5.7 31.8 0.75
1N4694 8.2 7.79 8.61 1 6.2 29 0.5
1N4695 8.7 8.265 9.135 1 6.6 27.4 0.1
1N4696 9.1 8.645 9.555 1 6.9 26.2 0.08
1N4697 10 9.5 10.5 1 7.6 24.8 0.1
1N4698 11 10.45 11.55 0.05 8.4 21.6 0.11
1N4699 12 11.4 12.6 0.05 9.1 20.4 0.12
1N4700 13 12.35 13.65 0.05 9.8 19 0.13
1N4701 14 13.3 14.7 0.05 10.6 17.5 0.14
1N4702 15 14.25 15.75 0.05 11.4 16.3 0.15
1N4703 16 15.2 16.8 0.05 12.1 15.4 0.16
1N4704 17 16.15 17.85 0.05 12.9 14.5 0.17
1N4705 18 17.1 18.9 0.05 13.6 13.2 0.18
1N4706 19 18.05 19.95 0.05 14.4 12.5 0.19
1N4707 20 19 21 0.01 15.2 11.9 0.2
1N4708 22 20.9 23.1 0.01 16.7 10.8 0.22
1N4709 24 22.8 25.2 0.01 18.2 9.9 0.24
1N4710 25 23.75 26.25 0.01 19 9.5 0.25
1N4711 27 25.65 28.35 0.01 20.4 8.8 0.27
1N4712 28 26.6 29.4 0.01 21.2 8.5 0.28
1N4713 30 28.5 31.5 0.01 22.8 7.9 0.3
1N4714 33 31.35 34.65 0.01 25 7.2 0.33
1N4715 36 34.2 37.8 0.01 27.3 6.6 0.36
1N4716 39 37.05 40.95 0.01 29.6 6.1 0.39
1N4717 43 40.85 45.15 0.01 32.6 5.5 0.43
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION (VZ) Reverse leakage currents are guaranteed and measured at VR as shown on the table.
The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage, NOTE 4. MAXIMUM VOLTAGE CHANGE (∆VZ)
C for ±2%, D for ±1%. Voltage change is equal to the difference between VZ at 100 µA and VZ at 10 µA.
NOTE 2. MAXIMUM ZENER CURRENT RATINGS (IZM) NOTE 5. ZENER VOLTAGE (VZ) MEASUREMENT
Maximum Zener current ratings are based on maximum Zener voltage of the individual units Nominal Zener voltage is measured with the device junction in thermal equilibrium at the lead
and JEDEC 250 mW rating. temperature at 30°C ±1°C and 3/8″ lead length.
NOTE 3. REVERSE LEAKAGE CURRENT (IR)

6-105
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Based on dc measurements at thermal equilibrium; lead length
= 3/8″; thermal resistance of heat sink = 30°C/W) VF = 1.1 Max @ IF = 200 mA for all types.
Nominal Max Zener Impedance Max Reverse

Zener Voltage Test (Note 4) Leakage Current Max Zener Voltage
JEDEC VZ @ IZT Current Temperature Coeff.
Coeff
Type No. Volts IZT ZZT @ IZT ZZK @ IZK = 0.25 mA IR VR θVZ (%/°C)
(Note 1) (Note 3) mA Ohms Ohms µA Volts (Note 2)
1N5221B 2.4 20 30 1200 100 1 –0.085
1N5222B 2.5 20 30 1250 100 1 –0.085
1N5223B 2.7 20 30 1300 75 1 –0.08
1N5224B 2.8 20 30 1400 75 1 –0.08
1N5225B 3 20 29 1600 50 1 –0.075
1N5226B 3.3 20 28 1600 25 1 –0.07
1N5227B 3.6 20 24 1700 15 1 –0.065
1N5228B 3.9 20 23 1900 10 1 –0.06
1N5229B 4.3 20 22 2000 5 1 ± 0.055
1N5230B 4.7 20 19 1900 5 2 ± 0.03
1N5231B 5.1 20 17 1600 5 2 ± 0.03
1N5232B 5.6 20 11 1600 5 3 +0.038
1N5233B 6 20 7 1600 5 3.5 +0.038
1N5234B 6.2 20 7 1000 5 4 +0.045
1N5235B 6.8 20 5 750 3 5 +0.05
1N5236B 7.5 20 6 500 3 6 +0.058
1N5237B 8.2 20 8 500 3 6.5 +0.062
1N5238B 8.7 20 8 600 3 6.5 +0.065
1N5239B 9.1 20 10 600 3 7 +0.068
1N5240B 10 20 17 600 3 8 +0.075
1N5241B 11 20 22 600 2 8.4 +0.076
1N5242B 12 20 30 600 1 9.1 +0.077
1N5243B 13 9.5 13 600 0.5 9.9 +0.079
1N5244B 14 9 15 600 0.1 10 +0.082
1N5245B 15 8.5 16 600 0.1 11 +0.082
1N5246B 16 7.8 17 600 0.1 12 +0.083
1N5247B 17 7.4 19 600 0.1 13 +0.084
1N5248B 18 7 21 600 0.1 14 +0.085
1N5249B 19 6.6 23 600 0.1 14 +0.086
1N5250B 20 6.2 25 600 0.1 15 +0.086
1N5251B 22 5.6 29 600 0.1 17 +0.087
1N5252B 24 5.2 33 600 0.1 18 +0.088
1N5253B 25 5 35 600 0.1 19 +0.089
1N5254B 27 4.6 41 600 0.1 21 +0.09
1N5255B 28 4.5 44 600 0.1 21 +0.091
1N5256B 30 4.2 49 600 0.1 23 +0.091
1N5257B 33 3.8 58 700 0.1 25 +0.092
1N5258B 36 3.4 70 700 0.1 27 +0.093
1N5259B 39 3.2 80 800 0.1 30 +0.094
1N5260B 43 3 93 900 0.1 33 +0.095
1N5261B 47 2.7 105 1000 0.1 36 +0.095
1N5262B 51 2.5 125 1100 0.1 39 +0.096
1N5263B 56 2.2 150 1300 0.1 43 +0.096
1N5264B 60 2.1 170 1400 0.1 46 +0.097
1N5265B 62 2 185 1400 0.1 47 +0.097
(continued)

6-106
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted. Based on dc measurements at thermal equi-
librium; lead length = 3/8″; thermal resistance of heat sink = 30°C/W) VF = 1.1 Max @ IF = 200 mA for all types.
Nominal Max Zener Impedance Max Reverse

Zener Voltage Test (Note 4) Leakage Current Max Zener Voltage
JEDEC VZ @ IZT Current Temperature Coeff.
Coeff
Type No. Volts IZT ZZT @ IZT ZZK @ IZK = 0.25 mA IR VR θVZ (%/°C)
(Note 1) (Note 3) mA Ohms Ohms µA Volts (Note 2)
1N5266B 68 1.8 230 1600 0.1 52 +0.097
1N5267B 75 1.7 270 1700 0.1 56 +0.098
1N5268B 82 1.5 330 2000 0.1 62 +0.098
1N5269B 87 1.4 370 2200 0.1 68 +0.099
1N5270B 91 1.4 400 2300 0.1 69 +0.099
1N5271B 100 1.3 500 2600 0.1 76 +0.11
1N5272B 110 1.1 750 3000 0.1 84 +0.11
1N5273B 120 1 900 4000 0.1 91 +0.11
1N5274B 130 0.95 1100 4500 0.1 99 +0.11
1N5275B 140 0.9 1300 4500 0.1 106 +0.11
1N5276B 150 0.85 1500 5000 0.1 114 +0.11
1N5277B 160 0.8 1700 5500 0.1 122 +0.11
1N5278B 170 0.74 1900 5500 0.1 129 +0.11
1N5279B 180 0.68 2200 6000 0.1 137 +0.11
1N5280B 190 0.66 2400 6500 0.1 144 +0.11
1N5281B 200 0.65 2500 7000 0.1 152 +0.11
NOTE 1. TOLERANCE NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT

The JEDEC type numbers shown indicate a tolerance of ±5%. For tighter tolerance devices Nominal zener voltage is measured with the device junction in thermal equilibrium at the lead
use suffixes “C” for ±2% and “D” for ±1%. temperature of 30°C ±1°C and 3/8″ lead length.
NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION
NOTE 2. TEMPERATURE COEFFICIENT (θVZ)
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
Test conditions for temperature coefficient are as follows:
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
a. IZT = 7.5 mA, T1 = 25°C,
a. T2 = 125°C (1N5221B through 1N5242B).
b. IZT = Rated IZT, T1 = 25°C,
a. T2 = 125°C (1N5243B through 1N5281B). For more information on special selections contact your nearest Motorola representa-
tive.
Device to be temperature stabilized with current applied prior to reading breakdown voltage
at the specified ambient temperature.

6-107
*ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted.) (VF = 1.5 Volts Max @ IF = 100 mAdc for all types.)
Nominal Max Zener Impedance (Note 3) Max Reverse Leakage Current Max DC
Motorola Zener Voltage Test Zener
Type VZ @ IZT Current Current
Number Volts IZT ZZT @ IZT ZZK @ IZK = IR @ VR IZM
(Note 1) (Note 4) mA Ohms Ohms 0.25 mA µA Volts (Note 2)
1N5985B 2.4 5 100 1800 100 1 208
1N5986B 2.7 5 100 1900 75 1 185
1N5987B 3 5 95 2000 50 1 167
1N5988B 3.3 5 95 2200 25 1 152
1N5989B 3.6 5 90 2300 15 1 139
1N5990B 3.9 5 90 2400 10 1 128
1N5991B 4.3 5 88 2500 5 1 116
1N5992B 4.7 5 70 2200 3 1.5 106
1N5993B 5.1 5 50 2050 2 2 98
1N5994B 5.6 5 25 1800 2 3 89
1N5995B 6.2 5 10 1300 1 4 81
1N5996B 6.8 5 8 750 1 5.2 74
1N5997B 7.5 5 7 600 0.5 6 67
1N5998B 8.2 5 7 600 0.5 6.5 61
1N5999B 9.1 5 10 600 0.1 7 55
1N6000B 10 5 15 600 0.1 8 50
1N6001B 11 5 18 600 0.1 8.4 45
1N6002B 12 5 22 600 0.1 9.1 42
1N6003B 13 5 25 600 0.1 9.9 38
1N6004B 15 5 32 600 0.1 11 33
1N6005B 16 5 36 600 0.1 12 31
1N6006B 18 5 42 600 0.1 14 28
1N6007B 20 5 48 600 0.1 15 25
1N6008B 22 5 55 600 0.1 17 23
1N6009B 24 5 62 600 0.1 18 21
1N6010B 27 5 70 600 0.1 21 19
1N6011B 30 5 78 600 0.1 23 17
1N6012B 33 5 88 700 0.1 25 15
1N6013B 36 5 95 700 0.1 27 14
1N6014B 39 2 130 800 0.1 30 13
1N6015B 43 2 150 900 0.1 33 12
1N6016B 47 2 170 1000 0.1 36 11
1N6017B 51 2 180 1300 0.1 39 9.8
1N6018B 56 2 200 1400 0.1 43 8.9
1N6019B 62 2 225 1400 0.1 47 8
1N6020B 68 2 240 1600 0.1 52 7.4
1N6021B 75 2 265 1700 0.1 56 6.7
1N6022B 82 2 280 2000 0.1 62 6.1
1N6023B 91 2 300 2300 0.1 69 5.5
1N6024B 100 1 500 2600 0.1 76 5
1N6025B 110 1 650 3000 0.1 84 4.5
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION NOTE 3.
Tolerance designation — Device tolerances of ±5% are indicated by a “B” suffix, ±2% by a
“C” suffix, ±1% by a “D” suffix.
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.
NOTE 2.
NOTE 4.
This data was calculated using nominal voltages. The maximum current handling capability
on a worst case basis is limited by the actual zener voltage at the operating point and the pow- Nominal Zener Voltage (VZ) is measured with the device junction in thermal equilibrium at the
er derating curve. lead temperature of 30°C ±1°C and 3/8″ lead length.

6-108
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted.) (VF = 1.3 Volts Max, IF = 100 mAdc for all types.)
Max Reverse
Leakage Current
Max Zener
VZT at IZT IR at VR
Impedance
(V) (µA)
(Note 3)
Motorola ZZT @ IZT Tamb Tamb IZM
Type Min Max (Ohms) IZT 25°C 125°C VR (mA)
Number (Note 1) (Note 1) Max (mA) Max Max (V) (Note 2)
BZX55C2V4RL 2.28 2.56 85 5 50 100 1 155
BZX55C2V7RL 2.5 2.9 85 5 10 50 1 135
BZX55C3V0RL 2.8 3.2 85 5 4 40 1 125
BZX55C3V3RL 3.1 3.5 85 5 2 40 1 115
BZX55C3V6RL 3.4 3.8 85 5 2 40 1 105
BZX55C3V9RL 3.7 4.1 85 5 2 40 1 95
BZX55C4V3RL 4 4.6 75 5 1 20 1 90
BZX55C4V7RL 4.4 5 60 5 0.5 10 1 85
BZX55C5V1RL 4.8 5.4 35 5 0.1 2 1 80
BZX55C5V6RL 5.2 6 25 5 0.1 2 1 70
BZX55C6V2RL 5.8 6.6 10 5 0.1 2 2 64
BZX55C6V8RL 6.4 7.2 8 5 0.1 2 3 58
BZX55C7V5RL 7 7.9 7 5 0.1 2 5 53
BZX55C8V2RL 7.7 8.7 7 5 0.1 2 6 47
BZX55C9V1RL 8.5 9.6 10 5 0.1 2 7 43
BZX55C10RL 9.4 10.6 15 5 0.1 2 7.5 40
BZX55C11RL 10.4 11.6 20 5 0.1 2 8.5 36
BZX55C12RL 11.4 12.7 20 5 0.1 2 9 32
BZX55C13RL 12.4 14.1 26 5 0.1 2 10 29
BZX55C15RL 13.8 15.6 30 5 0.1 2 11 27
BZX55C16RL 15.3 17.1 40 5 0.1 2 12 24
BZX55C18RL 16.8 19.1 50 5 0.1 2 14 21
BZX55C20RL 18.8 21.1 55 5 0.1 2 15 20
BZX55C22RL 20.8 23.3 55 5 0.1 2 17 18
BZX55C24RL 22.8 25.6 80 5 0.1 2 18 16
BZX55C27RL 25.1 28.9 80 5 0.1 2 20 14
BZX55C30RL 28 32 80 5 0.1 2 22 13
BZX55C33RL 31 35 80 5 0.1 2 24 12
BZX55C36RL 34 38 80 5 0.1 2 27 11
BZX55C39RL 37 41 90 2.5 0.1 5 28 10
BZX55C43RL 40 46 90 2.5 0.1 5 32 9.2
BZX55C47RL 44 50 110 2.5 0.1 5 35 8.5
BZX55C51RL 48 54 125 2.5 0.1 10 38 7.8
BZX55C56RL 52 60 135 2.5 0.1 10 42 7
BZX55C62RL 58 66 150 2.5 0.1 10 47 6.4
BZX55C68RL 64 72 160 2.5 0.1 10 51 5.9
BZX55C75RL 70 80 170 2.5 0.1 10 56 5.3
BZX55C82RL 77 87 200 2.5 0.1 10 62 4.8
BZX55C91RL 85 96 250 1 0.1 10 69 4.3
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION on a worst case basis is limited by the actual zener voltage at the operating point and the pow-
Tolerance designation — The type numbers listed have zener voltage min/max limits as er derating curve.
shown. Device tolerance of ±2% are indicated by a “B” instead of a “C”. Zener voltage is mea- NOTE 3.
sured with the device junction in thermal equilibrium at the lead temperature of 30°C ±1°C
and 3/8″ lead length.
applied. The specified limtis are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.
NOTE 2.
This data was calculated using nominal voltages. The maximum current handling capability

6-109
*ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted.) (VF = 1.5 Volts Max @ IF = 100 mAdc for all types.)
Impedance (Ohm) Temp. Coefficient Capacitance
(Note 1)
Zener Voltage @ IZT Leakage Current (Typical) (Typical)
(Note 4)
f = 1000 Hz (µA) (mV/°C) (pF)
Device
D i Type
T IZT = Max @ VR = VR = 0,
(Note 2) Min Max (mA) (Note 3) Max (Volt) Min Max f = 1.0 MHz
BZX79C2V4RL 2.2 2.6 5 100 100 1 –3.5 0 255
BZX79C2V7RL 2.5 2.9 5 100 75 1 –3.5 0 230
BZX79C3V0RL 2.8 3.2 5 95 50 1 –3.5 0 215
BZX79C3V3RL 3.1 3.5 5 95 25 1 –3.5 0 200
BZX79C3V6RL 3.4 3.8 5 90 15 1 –3.5 0 185
BZX79C3V9RL 3.7 4.1 5 90 10 1 –3.5 +0.3 175
BZX79C4V3RL 4 4.6 5 90 5 1 –3.5 +1 160
BZX79C4V7RL 4.4 5 5 80 3 2 –3.5 +0.2 130
BZX79C5V1RL 4.8 5.4 5 60 2 2 –2.7 +1.2 110
BZX79C5V6RL 5.2 6 5 40 1 2 –2 +2.5 95
BZX79C6V2RL 5.8 6.6 5 10 3 4 0.4 3.7 90
BZX79C6V8RL 6.4 7.2 5 15 2 4 1.2 4.5 85
BZX79C7V5RL 7 7.9 5 15 1 5 2.5 5.3 80
BZX79C8V2RL 7.7 8.7 5 15 0.7 5 3.2 6.2 75
BZX79C9V1RL 8.5 9.6 5 15 0.5 6 3.8 7 70
BZX79C10RL 9.4 10.6 5 20 0.2 7 4.5 8 70
BZX79C11RL 10.4 11.6 5 20 0.1 8 5.4 9 65
BZX79C12RL 11.4 12.7 5 25 0.1 8 6 10 65
BZX79C13RL 12.4 14.1 5 30 0.1 8 7 11 60
BZX79C15RL 13.8 15.6 5 30 0.05 10.5 9.2 13 55
BZX79C16RL 15.3 17.1 5 40 0.05 11.2 10.4 14 52
BZX79C18RL 16.8 19.1 5 45 0.05 12.6 12.9 16 47
BZX79C20RL 18.8 21.2 5 55 0.05 14 14.4 18 36
BZX79C22RL 20.8 23.3 5 55 0.05 15.4 16.4 20 34
BZX79C24RL 22.8 25.6 5 70 0.05 16.8 18.4 22 33
BZX79C27RL 25.1 28.9 2 80 0.05 18.9 23.5 30
BZX79C30RL 28 32 2 80 0.05 21 26 27
BZX79C33RL 31 35 2 80 0.05 23.1 29 25
BZX79C36RL 34 38 2 90 0.05 25.2 31 23
BZX79C39RL 37 41 2 130 0.05 27.3 34 21
BZX79C43RL 40 46 2 150 0.05 30.1 37 21
BZX79C47RL 44 50 2 170 0.05 32.9 40 19
BZX79C51RL 48 54 2 180 0.05 35.7 44 19
BZX79C56RL 52 60 2 200 0.05 39.2 47 18
BZX79C62RL 58 66 2 215 0.05 43.4 51 17
BZX79C68RL 64 72 2 240 0.05 47.6 56 17
BZX79C75RL 70 79 2 255 0.05 52.5 60 16.5
BZX79C82RL 77 87 2 280 0.1 62 46 95 29
BZX79C91RL 85 96 2 300 0.1 69 51 107 28
BZX79C100RL 94 106 1 500 0.1 76 57 119 27
BZX79C110RL 104 116 1 650 0.1 84 63 131 26
BZX79C120RL 114 127 1 800 0.1 91 69 144 24
BZX79C130RL 124 141 1 950 0.1 99 75 158 23
BZX79C150RL 138 156 1 1250 0.1 114 87 185 21
BZX79C160RL 153 171 1 1400 0.1 122 93 200 20
BZX79C180RL 168 191 1 1700 0.1 137 105 228 18
BZX79C200RL 188 212 1 2000 0.1 152 120 255 17
NOTE 1. Zener voltage is measured under pulse conditions such that TJ is no more than 2°C shown. Device tolerances of ±2% are indicated by a “B” instead of a “C,” and ±1% by “A.”
above TA.
NOTE 2. TOLERANCE AND VOLTAGE DESIGNATION NOTE 3. ZZT is measured by dividing the ac voltage drop across the device by the ac current
Tolerance designation —– The type numbers listed have zener voltage min/max limits as applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 1.0 kHz.

6-110
ELECTRICAL CHARACTERISTICS (at TA = 25°C)

Motorola ZPD and BZX83C series. Forward Voltage VF = 1 Volt Max at IF = 50 mA.
Zener Voltage (Note 1) Impedance (Ω) VR Min
at IZT = 5.0 mA Max (Note 2) Typ.
yp Temp.p
C ff
Coeff.
at IZ = 1 mA V
at IZT
Device Type Nominal Min Max at IZT BZX83 ZPD % per °C BZX83 ZPD at IR
BZX83C2V7RL ZPD2.7RL 2.7 2.5 2.9 85 600 500 –0.09...–0.04 1 — 100 mA
BZX83C3V0RL ZPD3.0RL 3 2.8 3.2 90 600 500 –0.09...–0.03 1 — 160 mA
BZX83C3V3RL ZPD3.3RL 3.3 3.1 3.5 90 600 500 –0.08...–0.03 1 — 130 mA
BZX83C3V6RL ZPD3.6RL 3.6 3.4 3.8 90 600 500 –0.08...–0.03 1 — 120 mA
BZX83C3V9RL ZPD3.9RL 3.9 3.7 4.1 85 600 500 –0.07...–0.03 1 — 110 mA
BZX83C4V3RL ZPD4.3RL 4.3 4 4.6 80 600 500 –0.06...–0.01 1 — 115 mA
BZX83C4V7RL ZPD4.7RL 4.7 4.4 5 78 600 500 –0.05...+0.02 1 — 112 mA
BZX83C5V1RL ZPD5.1RL 5.1 4.8 5.4 60 550 480 –0.03...+0.04 0.8 100 nA
BZX83C5V6RL ZPD5.6RL 5.6 5.2 6 40 450 400 –0.02...+0.06 1 100 nA
BZX83C6V2RL ZPD6.2RL 6.2 5.8 6.6 10 200 –0.01...+0.07 2 100 nA
BZX83C6V8RL ZPD6.8RL 6.8 6.4 7.2 8 150 +0.02...+0.07 3 100 nA
BZX83C7V5RL ZPD7.5RL 7.5 7 7.9 7 50 +0.03...+0.07 5 100 nA
BZX83C8V2RL ZPD8.2RL 8.2 7.7 8.7 7 50 +0.04...+0.07 6 100 nA
BZX83C9V1RL ZPD9.1RL 9.1 8.5 9.6 10 50 +0.05...+0.08 7 100 nA
BZX83C10RL ZPD10RL 10 9.4 10.6 15 70 +0.05...+0.08 7.5 100 nA
BZX83C11RL ZPD11RL 11 10.4 11.6 20 70 +0.05...+0.09 8.5 100 nA
BZX83C12RL ZPD12RL 12 11.4 12.7 20 90 +0.06...+0.09 9 100 nA
BZX83C13RL ZPD13RL 13 12.4 14.1 25 110 +0.07...+0.09 10 100 nA
BZX83C15RL ZPD15RL 15 13.8 15.6 30 110 +0.07...+0.09 11 100 nA
BZX83C16RL ZPD16RL 16 15.3 17.1 40 170 +0.08...+0.095 12 100 nA
BZX83C18RL ZPD18RL 18 16.8 19.1 50 170 +0.08...+0.10 14 100 nA
BZX83C20RL ZPD20RL 20 18.8 21.2 55 220 +0.08...+0.10 15 100 nA
BZX83C22RL ZPD22RL 22 20.8 23.3 55 220 +0.08...+0.10 17 100 nA
BZX83C24RL ZPD24RL 24 22.8 25.6 80 220 +0.08...+0.10 18 100 nA
BZX83C27RL ZPD27RL 27 25.1 28.9 80 250 +0.08...+0.10 20 100 nA
BZX83C30RL ZPD30RL 30 28 32 80 250 +0.08...+0.10 22 100 nA
BZX83C33RL ZPD33RL 33 31 35 80 250 +0.08...+0.10 24 100 nA
NOTE 1. Pulse test.
NOTE 2. f = 1.0 kHz, IZ(ac) = 0.1 IZ(dc).

6-111
Designed for 250 mW applications requiring low leakage, • Voltage Range from 1.8 to 10 Volts
low impedance. Same as 1N4099 through 1N4104 and • Zener Impedance and Zener Voltage Specified for Low-
1N4614 through 1N4627 except low noise test omitted. Level Operation at IZT = 250 µA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified. IZT = 250 µA and VF = 1 V Max @ IF = 200 mA for all
ELECTRICAL CHARACTERISTICS types)
Nominal Max Zener Max
Zener Voltage Impedance Reverse @ Test Max Zener Current
Type VZ ZZT Current (Note 5) Voltage IZM
Number (Note 2) (Note 3) IR VR (Note 4)
(Note 1) (Volts) (Ohms) (µA) (Volts) (mA)
MZ4614 1.8 1200 7.5 1 120
MZ4615 2 1250 5 1 110
MZ4616 2.2 1300 4 1 100
MZ4617 2.4 1400 2 1 95
MZ4618 2.7 1500 1 1 90
MZ4619 3 1600 0.8 1 85
MZ4620 3.3 1650 7.5 1.5 80
MZ4621 3.6 1700 7.5 2 75
MZ4622 3.9 1650 5 2 70
MZ4623 4.3 1600 4 2 65
MZ4624 4.7 1550 10 3 60
MZ4625 5.1 1500 10 3 55
MZ4626 5.6 1400 10 4 50
MZ4627 6.2 1200 10 5 45
MZ4099 6.8 200 10 5.2 35
MZ4100 7.5 200 10 5.7 31.8
MZ4101 8.2 200 1 6.3 29
MZ4102 8.7 200 1 6.7 27.4
MZ4103 9.1 200 1 7 26.2
MZ4104 10 200 1 7.6 24.8
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION NOTE 4. MAXIMUM ZENER CURRENT RATINGS (IZM)
The type numbers shown have a standard tolerance of ±5% on the nominal zener voltage. Maximum zener current ratings are based on maximum zener voltage of the individual units.
NOTE 5. REVERSE LEAKAGE CURRENT IR
Nominal Zener Voltage is measured with the device junction in the thermal equilibrium with
ambient temperature of 25°C. Reverse leakage currents are guaranteed and are measured at VR as shown on the table.
NOTE 3. ZENER IMPEDANCE (ZZT) DERIVATION NOTE 6. SPECIAL SELECTORS AVAILABLE INCLUDE:
The zener impedance is derived from the 60 cycle ac voltage, which results when an ac cur- A) Tighter voltage tolerances. Contact your nearest Motorola representative for more infor-
rent having an rms value equal to 10% of the dc zener current (IZT) is superimposed on IZT. mation.

6-112
Low Voltage Avalanche Passivated

Silicon Oxide Zener Regulator Diodes
Same as 1N5520B through 1N5530B except low noise test
spec omitted.
• Low Maximum Regulation Factor
• Low Zener Impedance
• Low Leakage Current
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified. Based on dc measurements at thermal equilibrium;
ELECTRICAL CHARACTERISTICS VF = 1.1 Max @ IF = 200 mA for all types.)
Nominal Max Reverse Leakage Current Maximum

Zener Max Zener DC Zener Regulation Low
Voltage Test
T Impedance Current Factor VZ
M l
Motorola VZ @ IZT Current ZZT @ IZT IR IZM ∆ VZ Current
Type No. Volts IZT Ohms µAdc mAdc Volts IZL
(Note 1) (Note 2) mAdc (Note 3) (Note 4) VR – Volts (Note 5) (Note 6) mAdc
MZ5520B 3.9 20 22 1 1 98 0.85 2.0
MZ5521B 4.3 20 18 3 1.5 88 0.75 2.0
MZ5522B 4.7 10 22 2 2 81 0.6 1.0
MZ5523B 5.1 5 26 2 2.5 75 0.65 0.25
MZ5524B 5.6 3 30 2 3.5 68 0.3 0.25
MZ5525B 6.2 1 30 1 5 61 0.2 0.01
MZ5526B 6.8 1 30 1 6.2 56 0.1 0.01
MZ5527B 7.5 1 35 0.5 6.8 51 0.05 0.01
MZ5528B 8.2 1 40 0.5 7.5 46 0.05 0.01
MZ5529B 9.1 1 45 0.1 8.2 42 0.05 0.01
MZ5530B 10 1 60 0.05 9.1 38 0.1 0.01
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION NOTE 5. MAXIMUM REGULATOR CURRENT (IZM)
The “B” suffix type numbers listed are ±5% tolerance of nominal VZ. The maximum current shown is based on the maximum voltage of a ±5% type unit, therefore,
it applies only to the “B” suffix device. The actual IZM for any device may not exceed the value
of 400 milliwatts divided by the actual VZ of the device.
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambi-
ent temperature of 25°C. NOTE 6. MAXIMUM REGULATION FACTOR (∆VZ)
NOTE 3. ZENER IMPEDANCE (ZZ) DERIVATION ∆VZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current junction in thermal equilibrium.
having an rms value equal to 10% of the dc zener current (IZT) is superimposed on IZT.
NOTE 7. SPECIAL SELECTORS AVAILABLE INCLUDE:
NOTE 4. REVERSE LEAKAGE CURRENT IR A) Tighter voltage tolerances. Contact your nearest Motorola representative for more infor-
Reverse leakage currents are guaranteed and are measured at VR as shown on the table. mation.

6-113
Zener Voltage Regulator Diodes — Axial Leaded

500 mW DO-35 Glass
NOTES:
1. PACKAGE CONTOUR OPTIONAL WITHIN A AND B
B HEAT SLUGS, IF ANY, SHALL BE INCLUDED
WITHIN THIS CYLINDER, BUT NOT SUBJECT TO
THE MINIMUM LIMIT OF B.
2. LEAD DIAMETER NOT CONTROLLED IN ZONE F
D TO ALLOW FOR FLASH, LEAD FINISH BUILDUP
K AND MINOR IRREGULARITIES OTHER THAN
F HEAT SLUGS.
3. POLARITY DENOTED BY CATHODE BAND.
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 3.05 5.08 0.120 0.200
B 1.52 2.29 0.060 0.090
F D 0.46 0.56 0.018 0.022
K
F — 1.27 — 0.050
K 25.40 38.10 1.000 1.500
All JEDEC dimensions and notes apply.
CASE 299-02
DO-204AH
GLASS
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MULTIPLE PACKAGE QUANTITY (MPQ)

REQUIREMENTS
Package Option Type No. Suffix MPQ (Units)
Tape and Reel RL, RL2(1) 5K
Tape and Ammo TA, TA2(1) 5K
NOTES: 1. The “2” suffix refers to 26 mm tape spacing.
NOTES: 2. Radial Tape and Reel may be available. Please contact your Motorola
NOTES: 2. representative.
Refer to Section 10 for more information on Packaging Specifications.

6-114
GENERAL
1–1.3 Watt DO-41 Glass DATA
1–1.3 WATT
THIS GROUP DO-41 GLASS
One Watt Hermetically Sealed Glass
Silicon Zener Diodes 1 WATT
ZENER REGULATOR
DIODES
Specification Features: 3.3–100 VOLTS
• Complete Voltage Range — 3.3 to 100 Volts
• DO-41 Package
• Double Slug Type Construction
• Metallurgically Bonded Construction
• Oxide Passivated Die
CASE: Double slug type, hermetically sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from
case for 10 seconds
CASE 59-03
FINISH: All external surfaces are corrosion resistant with readily solderable leads
DO-41
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode GLASS
MAXIMUM RATINGS
DC Power Dissipation @ TA = 50°C PD 1 Watt
Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +200 °C
1.25
L = LEAD LENGTH
L = 1″ TO HEAT SINK
PD, MAXIMUM DISSIPATION (WATTS)
1 L = 1/8″
L = 3/8″
0.75
0.5
0.25
0 20 40 60 80 100 120 140 160 180 200

Figure 1. Power Temperature Derating Curve

6-115
a. Range for Units to 12 Volts b. Range for Units to 12 to 100 Volts

θVZ , TEMPERATURE COEFFICIENT (mV/°C)
θVZ , TEMPERATURE COEFFICIENT (mV/°C)

+12 100
70
+10 50
+8 30
20
+6
+4 10 RANGE VZ @ IZT
7
+2 5
RANGE VZ @ IZT
0 3
–2 2
–4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
Figure 2. Temperature Coefficients

(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
θ JL , JUNCTION-TO-LEAD THERMAL RESISTANCE (mV/°C/W)
175 θVZ , TEMPERATURE COEFFICIENT (mV/°C) +6
150 VZ @ IZ
+4 TA = 25°C
125
+2 20 mA
100
75 0
0.01 mA
50 1 mA
–2 NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
25 NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
0 –4
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 3 4 5 6 7 8
L, LEAD LENGTH TO HEAT SINK (INCHES) VZ, ZENER VOLTAGE (VOLTS)
Figure 3. Typical Thermal Resistance Figure 4. Effect of Zener Current

versus Lead Length
100
70 RECTANGULAR
50 11 V–100 V NONREPETITIVE WAVEFORM

TJ = 25°C PRIOR TO
30 5% DUTY CYCLE 3.3 V–10 V NONREPETITIVE INITIAL PULSE
20
10 10% DUTY CYCLE

7
5
20% DUTY CYCLE
3
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
Figure 5. Maximum Surge Power

6-116
1000 1000
TJ = 25°C 700 TJ = 25°C
500
iZ(rms) = 0.1 IZ(dc)
Z Z , DYNAMIC IMPEDANCE (OHMS)
Z Z , DYNAMIC IMPEDANCE (OHMS)

VZ = 2.7 V 500 iZ(rms) = 0.1 IZ(dc)
f = 60 Hz IZ = 1 mA f = 60 Hz
200 200
47 V
100 100
70 5 mA
50 27 V 50
20 20 20 mA
10 6.2 V 10
7
5 5
2 2
1 1
0.1 0.2 0.5 1 2 5 10 20 50 100 1 2 3 5 7 10 20 30 50 70 100
IZ, ZENER CURRENT (mA) VZ, ZENER CURRENT (mA)
Figure 6. Effect of Zener Current Figure 7. Effect of Zener Voltage
on Zener Impedance on Zener Impedance
10000 400
7000 300
5000
TYPICAL LEAKAGE CURRENT 200
2000 AT 80% OF NOMINAL 0 V BIAS
BREAKDOWN VOLTAGE 100
C, CAPACITANCE (pF)
1000 1 V BIAS
700
500 50
200
20
100
70
50 10
8 50% OF BREAKDOWN BIAS
I R , LEAKAGE CURRENT (µ A)
20
4
10 1 2 5 10 20 50 100
7
5 VZ, NOMINAL VZ (VOLTS)
Figure 9. Typical Capacitance versus VZ
2
1
0.7 1000
0.5 MINIMUM
+125°C 500
MAXIMUM
0.2
I F , FORWARD CURRENT (mA)
200
0.1
0.07 100
0.05
50
0.02 20 75°C
0.01 10
0.007 +25°C
0.005 25°C
5 150°C
0°C
0.002 2
0.001 1
3 4 5 6 7 8 9 10 11 12 13 14 15 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, NOMINAL ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)
Figure 8. Typical Leakage Current Figure 10. Typical Forward Characteristics

6-117
APPLICATION NOTE
Since the actual voltage available from a given zener diode temperature and may be found as follows:
is temperature dependent, it is necessary to determine junc- ∆TJL = θJLPD.
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom- θJL may be determined from Figure 3 for dc power condi-
mended: tions. For worst-case design, using expected limits of IZ, limits
Lead Temperature, TL, should be determined from: of PD and the extremes of TJ(∆TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
TL = θLAPD + TA.
∆V = θVZ ∆TJ.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD is
the power dissipation. The value for θLA will vary and depends θVZ, the zener voltage temperature coefficient, is found from
on the device mounting method. θLA is generally 30 to 40°C/W Figure 2.
for the various clips and tie points in common use and for Under high power-pulse operation, the zener voltage will
printed circuit board wiring. vary with time and may also be affected significantly by the
The temperature of the lead can also be measured using a zener resistance. For best regulation, keep current excursions
thermocouple placed on the lead as close as possible to the tie as low as possible.
point. The thermal mass connected to the tie point is normally Surge limitations are given in Figure 5. They are lower than
large enough so that it will not significantly respond to heat would be expected by considering only junction temperature,
surges generated in the diode as a result of pulsed operation as current crowding effects cause temperatures to be ex-
once steady-state conditions are achieved. Using the mea- tremely high in small spots, resulting in device degradation
sured value of TL, the junction temperature may be deter- should the limits of Figure 5 be exceeded.
mined by:
TJ = TL + ∆TJL.
∆TJL is the increase in junction temperature above the lead

6-118
*ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 1.2 V Max, IF = 200 mA for all types.
Nominal Maximum Zener Impedance (Note 4) Leakage Current

Zener Voltage Test Surge Current @
JEDEC VZ @ IZT Current TA = 25°C
Type No. Volts IZT ZZT @ IZT ZZK @ IZK IZK IR VR ir – mA
(Note 1) (Notes 2 and 3) mA Ohms Ohms mA µA Max Volts (Note 5)
1N4728A 3.3 76 10 400 1 100 1 1380
1N4729A 3.6 69 10 400 1 100 1 1260
1N4730A 3.9 64 9 400 1 50 1 1190
1N4731A 4.3 58 9 400 1 10 1 1070
1N4732A 4.7 53 8 500 1 10 1 970
1N4733A 5.1 49 7 550 1 10 1 890
1N4734A 5.6 45 5 600 1 10 2 810
1N4735A 6.2 41 2 700 1 10 3 730
1N4736A 6.8 37 3.5 700 1 10 4 660
1N4737A 7.5 34 4 700 0.5 10 5 605
1N4738A 8.2 31 4.5 700 0.5 10 6 550
1N4739A 9.1 28 5 700 0.5 10 7 500
1N4740A 10 25 7 700 0.25 10 7.6 454
1N4741A 11 23 8 700 0.25 5 8.4 414
1N4742A 12 21 9 700 0.25 5 9.1 380
1N4743A 13 19 10 700 0.25 5 9.9 344
1N4744A 15 17 14 700 0.25 5 11.4 304
1N4745A 16 15.5 16 700 0.25 5 12.2 285
1N4746A 18 14 20 750 0.25 5 13.7 250
1N4747A 20 12.5 22 750 0.25 5 15.2 225
1N4748A 22 11.5 23 750 0.25 5 16.7 205
1N4749A 24 10.5 25 750 0.25 5 18.2 190
1N4750A 27 9.5 35 750 0.25 5 20.6 170
1N4751A 30 8.5 40 1000 0.25 5 22.8 150
1N4752A 33 7.5 45 1000 0.25 5 25.1 135
1N4753A 36 7 50 1000 0.25 5 27.4 125
1N4754A 39 6.5 60 1000 0.25 5 29.7 115
1N4755A 43 6 70 1500 0.25 5 32.7 110
1N4756A 47 5.5 80 1500 0.25 5 35.8 95
1N4757A 51 5 95 1500 0.25 5 38.8 90
1N4758A 56 4.5 110 2000 0.25 5 42.6 80
1N4759A 62 4 125 2000 0.25 5 47.1 70
1N4760A 68 3.7 150 2000 0.25 5 51.7 65
1N4761A 75 3.3 175 2000 0.25 5 56 60
1N4762A 82 3 200 3000 0.25 5 62.2 55
1N4763A 91 2.8 250 3000 0.25 5 69.2 50
1N4764A 100 2.5 350 3000 0.25 5 76 45
*Indicates JEDEC Registered Data.
NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION
The JEDEC type numbers listed have a standard tolerance on the nominal zener voltage of The zener impedance is derived from the 60 cycle ac voltage, which results when an ac cur-
±5%. C for ±2%, D for ±1%. rent having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
on IZT or IZK.
NOTE 2. SPECIALS AVAILABLE INCLUDE:
Nominal zener voltages between the voltages shown and tighter voltage tolerances.
For detailed information on price, availability, and delivery, contact your nearest Motorola rep- NOTE 5. SURGE CURRENT (ir) NON-REPETITIVE
resentative.
The rating listed in the electrical characteristics table is maximum peak, non-repetitive, re-
NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT verse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second dura-
Motorola guarantees the zener voltage when measured at 90 seconds while maintaining the tion superimposed on the test current, IZT, per JEDEC registration; however, actual device
lead temperature (TL) at 30°C ± 1°C, 3/8″ from the diode body. capability is as described in Figure 5 of the General Data — DO-41 Glass.

6-119
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) (VF = 1.2 V Max, IF = 200 mA for all types.)
Zener Voltage Zener Impedance Leakage
VZT (V) ZZ (ohms) Current Surge
(Notes 2 and 3) Test (Note 4) (µA) Current
C
Currentt TA = 25
25°C
C
Max at IZ
T
Type VZ VZ IZT Max IR ir (mA)
(Note 1) Min Max (mA) at IZT (mA) VR (V) Max (Note 5)
BZX85C3V3RL 3.1 3.5 80 20 400 1 1 60 1380
BZX85C3V6RL 3.4 3.8 60 15 500 1 1 30 1260
BZX85C3V9RL 3.7 4.1 60 15 500 1 1 5 1190
BZX85C4V3RL 4 4.6 50 13 500 1 1 3 1070
BZX85C4V7RL 4.4 5 45 13 600 1 1.5 3 970
BZX85C5V1RL 4.8 5.4 45 10 500 1 2 1 890
BZX85C5V6RL 5.2 6 45 7 400 1 2 1 810
BZX85C6V2RL 5.8 6.6 35 4 300 1 3 1 730
BZX85C6V8RL 6.4 7.2 35 3.5 300 1 4 1 660
BZX85C7V5RL 7 7.9 35 3 200 0.5 4.5 1 605
BZX85C8V2RL 7.7 8.7 25 5 200 0.5 5 1 550
BZX85C9V1RL 8.5 9.6 25 5 200 0.5 6.5 1 500
BZX85C10RL 9.4 10.6 25 7 200 0.5 7 0.5 454
BZX85C11RL 10.4 11.6 20 8 300 0.5 7.7 0.5 414
BZX85C12RL 11.4 12.7 20 9 350 0.5 8.4 0.5 380
BZX85C13RL 12.4 14.1 20 10 400 0.5 9.1 0.5 344
BZX85C15RL 13.8 15.6 15 15 500 0.5 10.5 0.5 304
BZX85C16RL 15.3 17.1 15 15 500 0.5 11 0.5 285
BZX85C18RL 16.8 19.1 15 20 500 0.5 12.5 0.5 250
BZX85C20RL 18.8 21.2 10 24 600 0.5 14 0.5 225
BZX85C22RL 20.8 23.3 10 25 600 0.5 15.5 0.5 205
BZX85C24RL 22.8 25.6 10 25 600 0.5 17 0.5 190
BZX85C27RL 25.1 28.9 8 30 750 0.25 19 0.5 170
BZX85C30RL 28 32 8 30 1000 0.25 21 0.5 150
BZX85C33RL 31 35 8 35 1000 0.25 23 0.5 135
BZX85C36RL 34 38 8 40 1000 0.25 25 0.5 125
BZX85C39RL 37 41 6 45 1000 0.25 27 0.5 115
BZX85C43RL 40 46 6 50 1000 0.25 30 0.5 110
BZX85C47RL 44 50 4 90 1500 0.25 33 0.5 95
BZX85C51RL 48 54 4 115 1500 0.25 36 0.5 90
BZX85C56RL 52 60 4 120 2000 0.25 39 0.5 80
BZX85C62RL 58 66 4 125 2000 0.25 43 0.5 70
BZX85C68RL 64 72 4 130 2000 0.25 47 0.5 65
BZX85C75RL 70 80 4 150 2000 0.25 51 0.5 60
BZX85C82RL 77 87 2.7 200 3000 0.25 56 0.5 55
BZX85C91RL 85 96 2.7 250 3000 0.25 62 0.5 50
BZX85C100RL 96 106 2.7 350 3000 0.25 68 0.5 45
The type numbers listed have zener voltage min/max limits as shown. Device tolerance of
The zener impedance is derived from the 1 kHz cycle ac voltage, which results when an ac
±2% are indicated by a “B” instead of “C.”
current having an rms value equal to 10% of the dc zener current (IZT) or (IZK) is superim-
posed on IZT or IZK.
For detailed information on price, availability, and delivery, contact your nearest Motorola rep-
NOTE 5. SURGE CURRENT (ir) NON-REPETITIVE
resentative.
VZ is measured after the test current has been applied to 40 ± 10 msec., while maintaining tion superimposed on the test current IZT. However, actual device capability is as described
the lead temperature (TL) at 30°C ± 1°C, 3/8″ from the diode body. in Figure 5 of General Data DO-41 glass.

6-120
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 1.2 V Max, IF = 200 mA for all types.
Zener Impedance Surge

Zener Voltage (V) (Note 4) Blocking Current
(Notes 2 and 3) Test Current f = 1 kHz (ohms) Volt Min (V) TA = 25°C
Type No.
No IZT ir (ma)
(Note 1) VZ Min VZ Max (mA) Typ Max IR = 1 µA (Note 5)
MZPY3.9RL 3.7 4.1 100 4 7 — 1190
MZPY4.3RL 4 4.6 100 4 7 — 1070
MZPY4.7RL 4.4 5 100 4 7 — 970
MZPY5.1RL 4.8 5.4 100 2 5 0.7 890
MZPY5.6RL 5.2 6 100 1 2 1.5 810
MZPY6.2RL 5.8 6.6 100 1 2 2 730
MZPY6.8RL 6.4 7.2 100 1 2 3 660
MZPY7.5RL 7 7.9 100 1 2 5 605
MZPY8.2RL 7.7 8.7 100 1 2 6 550
MZPY9.1RL 8.5 9.6 50 2 4 7 500
MZPY10RL 9.4 10.6 50 2 4 7.5 454
MZPY11RL 10.4 11.6 50 3 7 8.5 414
MZPY12RL 11.4 12.7 50 3 7 9 380
MZPY13RL 12.4 14.1 50 4 9 10 344
MZPY15RL 14.2 15.8 50 4 9 11 304
MZPY16RL 15.3 17.1 25 5 10 12 285
MZPY18RL 16.8 19.1 25 5 11 14 250
MZPY20RL 18.8 21.2 25 6 12 15 225
MZPY22RL 20.8 23.3 25 7 13 17 205
MZPY24RL 22.8 25.6 25 8 14 18 190
MZPY27RL 25.1 28.9 25 9 15 20 170
MZPY30RL 28 32 25 10 20 22.5 150
MZPY33RL 31 35 25 11 20 25 135
MZPY36RL 34 38 10 25 60 27 125
MZPY39RL 37 41 10 30 60 29 115
MZPY43RL 40 46 10 35 80 32 110
MZPY47RL 44 50 10 40 80 35 95
MZPY51RL 48 54 10 45 100 38 90
MZPY56RL 52 60 10 50 100 42 80
MZPY62RL 58 66 10 60 130 47 70
MZPY68RL 64 72 10 65 130 51 65
MZPY75RL 70 79 10 70 160 56 60
MZPY82RL 77 88 10 80 160 61 55
MZPY91RL 85 96 5 120 250 68 50
MZPY100RL 94 106 5 130 250 75 45
The type numbers listed have zener voltage min/max limits as shown. Device tolerance of
The zener impedance is derived from the 1 kHz cycle ac voltage, which results when an ac
±2% are indicated by a “C” and ±1% by a “D” suffix.
current having an rms value equal to 10% of the dc zener current (IZT) of (IZK) is superim-
posed on IZT or IZK.
For detailed information on price, availability, and delivery, contact your nearest Motorola rep-
resentative.
VZ is measured after the test current has been applied to 40 ± 10 msec., while maintaining tion superimposed on the test current IZT, however, actual device capability is as described
the lead temperature (TL) at 30°C ± 1°C, 3/8″ from the diode body. in Figure 5 of General Data DO-41 glass.

6-121

1–1.3 Watt DO-41 Glass
NOTES:
D 2. POLARITY DENOTED BY CATHODE BAND.
K 3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
F
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107
D 0.71 0.86 0.028 0.034
F F — 1.27 — 0.050
K 27.94 — 1.100 —
K
CASE 59-03
DO-41
GLASS

REQUIREMENTS
Tape and Reel RL, RL2 6K

Tape and Ammo TA, TA2 4K
NOTE: 1. The “2” suffix refers to 26 mm tape spacing.
(Refer to Section 10 for more information on Packaging Specifications.)

6-122
GENERAL
1 to 3 Watt DO-41 Surmetic 30 DATA
1–3 WATT
THIS GROUP DO-41
SURMETIC 30
1 to 3 Watt Surmetic 30
Silicon Zener Diodes
1 TO 3 WATT
. . . a complete series of 1 to 3 Watt Zener Diodes with limits and operating characteristics ZENER REGULATOR
that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an DIODES
axial-lead, transfer-molded plastic package offering protection in all common environmen- 3.3–400 VOLTS
tal conditions.
Specification Features:
• Surge Rating of 98 Watts @ 1 ms
• Maximum Limits Guaranteed On Up To Six Electrical Parameters
• Package No Larger Than the Conventional 1 Watt Package
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
will be positive with respect to anode CASE 59-03
MOUNTING POSITION: Any DO-41
WEIGHT: 0.4 gram (approx) PLASTIC
MAXIMUM RATINGS
DC Power Dissipation @ TL = 75°C PD 3 Watts
Lead Length = 3/8″
Derate above 75°C 24 mW/°C
DC Power Dissipation @ TA = 50°C PD 1 Watt
5
L = LEAD LENGTH
PD, MAXIMUM DISSIPATION (WATTS)
L = 1/8″ TO HEAT SINK

4
L = 3/8″
3
2
L = 1″
0
0 20 40 60 80 100 120 140 160 180 200

6-123
30
θJL (t, D) TRANSIENT THERMAL RESISTANCE
20
D =0.5
10
JUNCTION-TO-LEAD (°C/W)
7 0.2
5
0.1
3
0.05 PPK t1
2 t2
0.02 DUTY CYCLE, D =t1/t2
1
0.7 0.01 NOTE: BELOW 0.1 SECOND, THERMAL SINGLE PULSE ∆TJL = θJL (t)PPK
0.5 D=0 RESPONSE CURVE IS APPLICABLE REPETITIVE PULSES ∆TJL = θJL (t,D)PPK
TO ANY LEAD LENGTH (L).
0.3
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
t, TIME (SECONDS)
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
1K 3
AS SPECIFIED IN ELEC. CHAR. TABLE

2
IR , REVERSE LEAKAGE (µ Adc) @ VR

RECTANGULAR
PPK , PEAK SURGE POWER (WATTS)
NONREPETITIVE 1
500
WAVEFORM 0.5 TA = 125°C
300 TJ = 25°C PRIOR 0.2
200 TO INITIAL PULSE 0.1
0.05
100 0.02
0.01
50 0.005
30 0.002 TA = 125°C
20 0.001
0.0005
10 0.0003
0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 1 2 5 10 20 50 100 200 400 1000
PW, PULSE WIDTH (ms) NOMINAL VZ (VOLTS)
Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage
APPLICATION NOTE
Since the actual voltage available from a given zener diode ∆TJL is the increase in junction temperature above the lead
is temperature dependent, it is necessary to determine junc- temperature and may be found from Figure 2 for a train of
tion temperature under any set of operating conditions in order power pulses (L = 3/8 inch) or from Figure 10 for dc power.
to calculate its value. The following procedure is recom-
∆TJL = θJL PD
mended:
Lead Temperature, TL, should be determined from: For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ (∆TJ) may be estimated. Changes
TL = θLA PD + TA in voltage, VZ, can then be found from:
θLA is the lead-to-ambient thermal resistance (°C/W) and
PD is the power dissipation. The value for θLA will vary and ∆V = θVZ ∆TJ
depends on the device mounting method. θLA is generally
30–40°C/W for the various clips and tie points in common θVZ, the zener voltage temperature coefficient, is found from
use and for printed circuit board wiring. Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
The temperature of the lead can also be measured using a vary with time and may also be affected significantly by the
thermocouple placed on the lead as close as possible to the tie zener resistance. For best regulation, keep current excursions
point. The thermal mass connected to the tie point is normally as low as possible.
large enough so that it will not significantly respond to heat Data of Figure 2 should not be used to compute surge capa-
surges generated in the diode as a result of pulsed operation bility. Surge limitations are given in Figure 3. They are lower
once steady-state conditions are achieved. Using the mea- than would be expected by considering only junction tempera-
sured value of TL, the junction temperature may be deter- ture, as current crowding effects cause temperatures to be ex-
mined by: tremely high in small spots resulting in device degradation
TJ = TL + ∆TJL should the limits of Figure 3 be exceeded.

6-124
TEMPERATURE COEFFICIENT RANGES

(90% of the Units are in the Ranges Indicated)
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C) @ I ZT

10 1000
8 500
6
200
4
100
2 RANGE
50
0
–2 20
–4 10
3 4 5 6 7 8 9 10 11 12 10 20 50 100 200 400 1000
VZ, ZENER VOLTAGE @ IZT (VOLTS) VZ, ZENER VOLTAGE @ IZT (VOLTS)
Figure 5. Units To 12 Volts Figure 6. Units 10 To 400 Volts
ZENER VOLTAGE versus ZENER CURRENT

(Figures 7, 8 and 9)
100 100
50 50
30 30
IZ, ZENER CURRENT (mA)
IZ , ZENER CURRENT (mA)
20 20
10 10
5 5
3 3
2 2
1 1
0.5 0.5
0.3 0.3
0.2 0.2
0.1 0.1
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100
Figure 7. VZ = 3.3 thru 10 Volts Figure 8. VZ = 12 thru 82 Volts

θJL, JUNCTION-TO-LEAD THERMAL RESISTANCE (° C/W)
10 80
70
5
IZ , ZENER CURRENT (mA)
60
2 50
1 40 L L
30
0.5 TL
20
PRIMARY PATH OF
0.2 10 CONDUCTION IS THROUGH
THE CATHODE LEAD
0.1 0
100 150 200 250 300 350 400 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
VZ, ZENER VOLTAGE (VOLTS) L, LEAD LENGTH TO HEAT SINK (INCH)
Figure 9. VZ = 100 thru 400 Volts Figure 10. Typical Thermal Resistance

6-125
*MAXIMUM RATINGS
DC Power Dissipation @ TL = 75°C, Lead Length = 3/8″ PD 1.5 Watts
*ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted. VF = 1.5 Volts Max @ lF = 200 mAdc for all types.)
Nominal Max. Reverse Maximum DC

Motorola Zener Voltage Test Max. Zener Impedance (Note 4) Leakage Current Zener
Number Volts IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM
(Note 1) (Note 2 and 3) mA Ohms Ohms mA µA Volts mAdc
1N5913B 3.3 113.6 10 500 1 100 1 454
1N5914B 3.6 104.2 9 500 1 75 1 416
1N5915B 3.9 96.1 7.5 500 1 25 1 384
1N5916B 4.3 87.2 6 500 1 5 1 348
1N5917B 4.7 79.8 5 500 1 5 1.5 319
1N5918B 5.1 73.5 4 350 1 5 2 294
1N5919B 5.6 66.9 2 250 1 5 3 267
1N5920B 6.2 60.5 2 200 1 5 4 241
1N5921B 6.8 55.1 2.5 200 1 5 5.2 220
1N5922B 7.5 50 3 400 0.5 5 6 200
1N5923B 8.2 45.7 3.5 400 0.5 5 6.5 182
1N5924B 9.1 41.2 4 500 0.5 5 7 164
1N5925B 10 37.5 4.5 500 0.25 5 8 150
1N5926B 11 34.1 5.5 550 0.25 1 8.4 136
1N5927B 12 31.2 6.5 550 0.25 1 9.1 125
1N5928B 13 28.8 7 550 0.25 1 9.9 115
1N5929B 15 25 9 600 0.25 1 11.4 100
1N5930B 16 23.4 10 600 0.25 1 12.2 93
1N5931B 18 20.8 12 650 0.25 1 13.7 83
1N5932B 20 18.7 14 650 0.25 1 15.2 75
1N5933B 22 17 17.5 650 0.25 1 16.7 68
1N5934B 24 15.6 19 700 0.25 1 18.2 62
1N5935B 27 13.9 23 700 0.25 1 20.6 55
1N5936B 30 12.5 26 750 0.25 1 22.8 50
1N5937B 33 11.4 33 800 0.25 1 25.1 45
1N5938B 36 10.4 38 850 0.25 1 27.4 41
1N5939B 39 9.6 45 900 0.25 1 29.7 38
1N5940B 43 8.7 53 950 0.25 1 32.7 34
1N5941B 47 8 67 1000 0.25 1 35.8 31
1N5942B 51 7.3 70 1100 0.25 1 38.8 29
1N5943B 56 6.7 86 1300 0.25 1 42.6 26
1N5944B 62 6 100 1500 0.25 1 47.1 24
1N5945B 68 5.5 120 1700 0.25 1 51.7 22
1N5946B 75 5 140 2000 0.25 1 56 20
1N5947B 82 4.6 160 2500 0.25 1 62.2 18
(continued)

6-126
*ELECTRICAL CHARACTERISTICS — continued (TL = 30°C unless otherwise noted. VF = 1.5 Volts Max @ lF = 200 mAdc for all
types.)
Nominal Max. Reverse Maximum DC

Motorola Zener Voltage Test Max. Zener Impedance (Note 4) Leakage Current Zener
Number Volts IZT ZZT @ IZT ZZK @ IZK IR @ VR IZM
(Note 1) (Note 2 and 3) mA Ohms Ohms mA µA Volts mAdc
1N5948B 91 4.1 200 3000 0.25 1 69.2 16
1N5949B 100 3.7 250 3100 0.25 1 76 15
1N5950B 110 3.4 300 4000 0.25 1 83.6 13
1N5951B 120 3.1 380 4500 0.25 1 91.2 12
1N5952B 130 2.9 450 5000 0.25 1 98.8 11
1N5953B 150 2.5 600 6000 0.25 1 114 10
1N5954B 160 2.3 700 6500 0.25 1 121.6 9
1N5955B 180 2.1 900 7000 0.25 1 136.8 8
1N5956B 200 1.9 1200 8000 0.25 1 152 7
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT
Tolerance designation — Device tolerances of ±5% are indicated by a “B” suffix. Motorola guarantees the zener voltage when meausred at 90 seconds while maintaining the
lead temperature (TL) at 30°C ±1°C, 3/8″ from the diode body.

NOTE 2. SPECIAL SELECTIONS AVAILABLE INCLUDE: The zener impedance is derived from the 60 cycle ac voltage, which results when an ac cur-
Nominal zener voltages between those shown and ±1% and ±2% tight voltage tolerances. rent having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
Consult factory. on IZT or IZK.

6-127
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 1.5 V Max, IF = 200 mA for all types)
Nominal Max Zener Impedance Leakage Maximum Surge

Zener Voltage Test (Note 3) Current Zener Current
Motorola VZ @ IZT Current Current @ TA = 25°C
Type No. Volts IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR IZM ir – mA
(Note 1) (Note 2) mA Ohms Ohms mA µA Max Volts mA (Note 4)
3EZ3.9D5 3.9 192 4.5 400 1 80 1 630 4.4
3EZ4.3D5 4.3 174 4.5 400 1 30 1 590 4.1
3EZ4.7D5 4.7 160 4 500 1 20 1 550 3.8
3EZ5.1D5 5.1 147 3.5 550 1 5 1 520 3.5
3EZ5.6D5 5.6 134 2.5 600 1 5 2 480 3.3
3EZ6.2D5 6.2 121 1.5 700 1 5 3 435 3.1
3EZ6.8D5 6.8 110 2 700 1 5 4 393 2.9
3EZ7.5D5 7.5 100 2 700 0.5 5 5 360 2.66
3EZ8.2D5 8.2 91 2.3 700 0.5 5 6 330 2.44
3EZ9.1D5 9.1 82 2.5 700 0.5 3 7 297 2.2
3EZ10D5 10 75 3.5 700 0.25 3 7.6 270 2
3EZ11D5 11 68 4 700 0.25 1 8.4 245 1.82
3EZ12D5 12 63 4.5 700 0.25 1 9.1 225 1.66
3EZ13D5 13 58 4.5 700 0.25 0.5 9.9 208 1.54
3EZ14D5 14 53 5 700 0.25 0.5 10.6 193 1.43
3EZ15D5 15 50 5.5 700 0.25 0.5 11.4 180 1.33
3EZ16D5 16 47 5.5 700 0.25 0.5 12.2 169 1.25
3EZ17D5 17 44 6 750 0.25 0.5 13 159 1.18
3EZ18D5 18 42 6 750 0.25 0.5 13.7 150 1.11
3EZ19D5 19 40 7 750 0.25 0.5 14.4 142 1.05
3EZ20D5 20 37 7 750 0.25 0.5 15.2 135 1
3EZ22D5 22 34 8 750 0.25 0.5 16.7 123 0.91
3EZ24D5 24 31 9 750 0.25 0.5 18.2 112 0.83
3EZ27D5 27 28 10 750 0.25 0.5 20.6 100 0.74
3EZ28D5 28 27 12 750 0.25 0.5 21 96 0.71
3EZ30D5 30 25 16 1000 0.25 0.5 22.5 90 0.67
3EZ33D5 33 23 20 1000 0.25 0.5 25.1 82 0.61
3EZ36D5 36 21 22 1000 0.25 0.5 27.4 75 0.56
3EZ39D5 39 19 28 1000 0.25 0.5 29.7 69 0.51
3EZ43D5 43 17 33 1500 0.25 0.5 32.7 63 0.45
3EZ47D5 47 16 38 1500 0.25 0.5 35.6 57 0.42
3EZ51D5 51 15 45 1500 0.25 0.5 38.8 53 0.39
3EZ56D5 56 13 50 2000 0.25 0.5 42.6 48 0.36
3EZ62D5 62 12 55 2000 0.25 0.5 47.1 44 0.32
3EZ68D5 68 11 70 2000 0.25 0.5 51.7 40 0.29
3EZ75D5 75 10 85 2000 0.25 0.5 56 36 0.27
3EZ82D5 82 9.1 95 3000 0.25 0.5 62.2 33 0.24
3EZ91D5 91 8.2 115 3000 0.25 0.5 69.2 30 0.22
3EZ100D5 100 7.5 160 3000 0.25 0.5 76 27 0.2
3EZ110D5 110 6.8 225 4000 0.25 0.5 83.6 25 0.18
3EZ120D5 120 6.3 300 4500 0.25 0.5 91.2 22 0.16
3EZ130D5 130 5.8 375 5000 0.25 0.5 98.8 21 0.15
3EZ140D5 140 5.3 475 5000 0.25 0.5 106.4 19 0.14
3EZ150D5 150 5 550 6000 0.25 0.5 114 18 0.13
3EZ160D5 160 4.7 625 6500 0.25 0.5 121.6 17 0.12
3EZ170D5 170 4.4 650 7000 0.25 0.5 130.4 16 0.12
3EZ180D5 180 4.2 700 7000 0.25 0.5 136.8 15 0.11
3EZ190D5 190 4 800 8000 0.25 0.5 144.8 14 0.1
(continued)

6-128
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted) VF = 1.5 V Max, IF = 200 mA for all types)
Nominal Max Zener Impedance Leakage Maximum Surge

Zener Voltage Test (Note 3) Current Zener Current
Motorola VZ @ IZT Current Current @ TA = 25°C
Type No. Volts IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR IZM ir – mA
(Note 1) (Note 2) mA Ohms Ohms mA µA Max Volts mA (Note 4)
3EZ200D5 200 3.7 875 8000 0.25 0.5 152 13 0.1
3EZ220D5 220 3.4 1600 9000 0.25 1 167 12 0.09
3EZ240D5 240 3.1 1700 9000 0.25 1 182 11 0.09
3EZ270D5 270 2.8 1800 9000 0.25 1 205 10 0.08
3EZ300D5 300 2.5 1900 9000 0.25 1 228 9 0.07
3EZ330D5 330 2.3 2200 9000 0.25 1 251 8 0.06
3EZ360D5 360 2.1 2700 9000 0.25 1 274 8 0.06
3EZ400D5 400 1.9 3500 9000 0.25 1 304 7 0.06
NOTE 1. TOLERANCES NOTE 4. SURGE CURRENT (ir) NON-REPETITIVE

Suffix 5 indicates 5% tolerance. Any other tolerance will be considered as a special device.
Motorola guarantees the zener voltage when measured at 40 ms ±10 ms 3/8″ from the diode tion superimposed on the test current, IZT, per JEDEC standards, however, actual device ca-
body, and an ambient temperature of 25°C (+8°C, –2°C) pability is as described in Figure 3 of General Data sheet for Surmetic 30s.
The zener impedance is derived from the 60 cycle ac voltage, which results when an ac cur- NOTE 5. SPECIAL SELECTIONS AVAILABLE INCLUDE:
rent having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed Nominal zener voltages between those shown. Tight voltage tolerances such as ±1% and
on IZT or IZK. ±2%. Consult factory.

6-129
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) VF = 1.5 V Max, IF = 200 mA for all types.
Zener Voltage Test Zener Impedance at IZT Surge Current

(Note 2) Current f = 1000 Hz (Ohm) Typical @ TL = 25°C
Type No. IZT Blocking Voltage TC ir – mA
(Note 1) Min Max mA Typ Max IR = 1 µA %/°C (Note 3)
MZD3.9 3.7 4.1 100 3.8 7 — –0.06 1380
MZD4.3 4 4.6 100 3.8 7 — +0.055 1260
MZD4.7 4.4 5 100 3.8 7 — +0.03 1190
MZD5.1 4.8 5.4 100 2 5 — +0.03 1070
MZD5.6 5.2 6 100 1 2 1.5 +0.038 970
MZD6.2 5.8 6.6 100 1 2 1.5 +0.045 890
MZD6.8 6.4 7.2 100 1 2 2 +0.05 810
MZD7.5 7 7.9 100 1 2 2 +0.058 730
MZD8.2 7.7 8.7 100 1 2 3.5 +0.062 660
MZD9.1 8.5 9.6 50 2 4 3.5 +0.068 605
MZD10 9.4 10.6 50 2 4 5 +0.075 550
MZD11 10.4 11.6 50 4 7 5 +0.076 500
MZD12 11.4 12.7 50 4 7 7 +0.077 454
MZD13 12.4 14.1 50 5 10 7 +0.079 414
MZD15 13.8 15.8 50 5 10 10 +0.082 380
MZD16 15.3 17.1 25 6 15 10 +0.083 344
MZD18 16.8 19.1 25 6 15 10 +0.085 304
MZD20 18.8 21.2 25 6 15 10 +0.086 285
MZD22 20.8 23.3 25 6 15 12 +0.087 250
MZD24 22.8 25.6 25 7 15 12 +0.088 225
MZD27 25.1 28.9 25 7 15 14 +0.09 205
MZD30 28 32 25 8 15 14 +0.091 190
MZD33 31 35 25 8 15 17 +0.092 170
MZD36 34 38 10 21 40 17 +0.093 150
MZD39 37 41 10 21 40 20 +0.094 135
MZD43 40 46 10 24 45 20 +0.095 125
MZD47 44 50 10 24 45 24 +0.095 115
MZD51 48 54 10 25 60 24 +0.096 110
MZD56 52 60 10 25 60 28 +0.096 95
MZD62 58 66 10 25 80 28 +0.097 90
MZD68 64 72 10 25 80 34 +0.097 80
MZD75 70 79 10 30 100 34 +0.098 70
MZD82 77 88 10 30 100 41 +0.098 65
MZD91 85 96 5 60 200 41 +0.099 60
MZD100 94 106 5 60 200 50 +0.11 55
MZD110 104 116 5 80 250 50 +0.11 50
MZD120 114 127 5 80 250 60 +0.11 45
MZD130 124 141 5 110 300 60 +0.11 —
MZD150 138 156 5 110 300 75 +0.11 —
MZD160 153 171 5 150 350 75 +0.11 —
MZD180 168 191 5 150 350 90 +0.11 —
MZD200 188 212 5 150 350 90 +0.11 —
NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION NOTE 3. (ir) NON-REPETITIVE SURGE CURRENT
The type numbers listed have zener voltage min/max limits as shown.
Maximum peak, non-repetitive reverse surge current of half square wave or equivalent sine
wave pulse of 50 ms duration, superimposed on the test current (IZT).

NOTE 4. SPECIAL SELECTIONS AVAILABLE INCLUDE:
The zener voltage is measured after the test current (IZT) has been applied for 40 ±10 millisec-
onds, while maintaining a lead temperautre (TL) of 30°C at a point of 10 mm from the diode Nominal zener voltages between those shown. Tight voltage tolerances such as ±1% and
body. ±2%. Consult factory.

6-130
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 1.5 V Max, lF = 200 mA for all types
Nominal Max Zener Impedance Leakage Surge

Zener Voltage (Note 3) Current Current
Motorola VZ @ IZT Test Current @ TA = 25°C
Type No. Volts IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR ir – mA
(Note 1) (Note 2) mA Ohms Ohms mA µA Max Volts (Note 4)
MZP4728A 3.3 76 10 400 1 100 1 1380
MZP4729A 3.6 69 10 400 1 100 1 1260
MZP4730A 3.9 64 9 400 1 50 1 1190
MZP4731A 4.3 58 9 400 1 10 1 1070
MZP4732A 4.7 53 8 500 1 10 1 970
MZP4733A 5.1 49 7 550 1 10 1 890
MZP4734A 5.6 45 5 600 1 10 2 810
MZP4735A 6.2 41 2 700 1 10 3 730
MZP4736A 6.8 37 3.5 700 1 10 4 660
MZP4737A 7.5 34 4 700 0.5 10 5 605
MZP4738A 8.2 31 4.5 700 0.5 10 6 550
MZP4739A 9.1 28 5 700 0.5 10 7 500
MZP4740A 10 25 7 700 0.25 10 7.6 454
MZP4741A 11 23 8 700 0.25 5 8.4 414
MZP4742A 12 21 9 700 0.25 5 9.1 380
MZP4743A 13 19 10 700 0.25 5 9.9 344
MZP4744A 15 17 14 700 0.25 5 11.4 304
MZP4745A 16 15.5 16 700 0.25 5 12.2 285
MZP4746A 18 14 20 750 0.25 5 13.7 250
MZP4747A 20 12.5 22 750 0.25 5 15.2 225
MZP4748A 22 11.5 23 750 0.25 5 16.7 205
MZP4749A 24 10.5 25 750 0.25 5 18.2 190
MZP4750A 27 9.5 35 750 0.25 5 20.6 170
MZP4751A 30 8.5 40 1000 0.25 5 22.8 150
MZP4752A 33 7.5 45 1000 0.25 5 25.1 135
MZP4753A 36 7 50 1000 0.25 5 27.4 125
MZP4754A 39 6.5 60 1000 0.25 5 29.7 115
MZP4755A 43 6 70 1500 0.25 5 32.7 110
MZP4756A 47 5.5 80 1500 0.25 5 35.8 95
MZP4757A 51 5 95 1500 0.25 5 38.8 90
MZP4758A 56 4.5 110 2000 0.25 5 42.6 80
MZP4759A 62 4 125 2000 0.25 5 47.1 70
MZP4760A 68 3.7 150 2000 0.25 5 51.7 65
MZP4761A 75 3.3 175 2000 0.25 5 56 60
MZP4762A 82 3 200 3000 0.25 5 62.2 55
MZP4763A 91 2.8 250 3000 0.25 5 69.2 50
MZP4764A 100 2.5 350 3000 0.25 5 76 45
1M110ZS5 110 2.3 450 4000 0.25 5 83.6 —
1M120ZS5 120 2 550 4500 0.25 5 91.2 —
1M130ZS5 130 1.9 700 5000 0.25 5 98.8 —
1M150ZS5 150 1.7 1000 6000 0.25 5 114 —
1M160ZS5 160 1.6 1100 6500 0.25 5 121.6 —
1M180ZS5 180 1.4 1200 7000 0.25 5 136.8 —
1M200ZS5 200 1.2 1500 8000 0.25 5 152 —
NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed
The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%. The on IZT or IZK.
tolerance on the 1M type numbers is indicated by the digits following ZS in the part number.
“5” indicates a ±5% VZ tolerance.
The rating listed in the electrical characteristics table is maximum peak, non-repetitive,
NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second
Motorola guarantees the zener voltage when measured at 90 seconds while maintaining the duration superimposed on the test current, IZT, however, actual device capability is as
lead temperature (TL) at 30°C ±1°C, 3/8″ from the diode body. described in Figure 3 of General Data — Surmetic 30.
NOTE 5. SPECIAL SELECTIONS AVAILABLE INCLUDE:
NOTE 3. ZENER IMPEDANCE (ZZ) DERIVATION Nominal zener voltages between those shown. Tight voltage tolerances such as ±1% and
The zener impedance is derived from the 60 cycle ac voltage, which results when an ac ±2%. Consult factory.

6-131

1–3 Watt DO-41 Surmetic 30
NOTES:
D 2. POLARITY DENOTED BY CATHODE BAND.
K 3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
F
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107
D 0.71 0.86 0.028 0.034
F F — 1.27 — 0.050
K 27.94 — 1.100 —
K
CASE 59-03
DO-41
PLASTIC

REQUIREMENTS
Tape and Reel RL 6K

Tape and Ammo TA 4K

6-132
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
5 Watt Surmetic 40 1N5333B

Silicon Zener Diodes through
1N5388B
This is a complete series of 5 Watt Zener Diodes with tight limits and better operating
characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.
All this is in an axial-lead, transfer-molded plastic package that offers protection in all com-
mon environmental conditions. 5 WATT
Specification Features: ZENER REGULATOR
DIODES
• Up to 180 Watt Surge Rating @ 8.3 ms
• Maximum Limits Guaranteed on Seven Electrical Parameters 3.3–200 VOLTS
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
WEIGHT: 0.7 gram (approx)
CASE 17
PLASTIC
MAXIMUM RATINGS
DC Power Dissipation @ TL = 75°C PD 5 Watts
Lead Length = 3/8″
8
P D , MAXIMUM POWER DISSIPATION (WATTS)
L = LEAD LENGTH
L = TO HEAT SINK
L = 1/8″ L = (SEE FIGURE 5)
6
L = 3/8″
4
L = 1″
2
0
0 20 40 60 80 100 120 140 160 180 200
5 Watt Surmetic 40 Data Sheet Motorola TVS/Zener Device Data

6-133
1N5333B through 1N5388B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 Max @ IF = 1 A for all types)
Nominal Max Reverse Maximum
Zener Max Zener Impedance Leakage Current Max Regulator
Voltage Test Surge Max Voltage Current
JEDEC VZ @ IZT Current ZZT @IZT ZZK @ IZK = 1 mA Current Regulation IZM
Type No. Volts IZT Ohms Ohms IR @ VR ir, Amps ∆ VZ, Volt mA
(Note 1) (Note 2) mA (Note 2) (Note 2) µA Volts (Note 3) (Note 4) (Note 5)
1N5333B 3.3 380 3 400 300 1 20 0.85 1440
1N5334B 3.6 350 2.5 500 150 1 18.7 0.8 1320
1N5335B 3.9 320 2 500 50 1 17.6 0.54 1220
1N5336B 4.3 290 2 500 10 1 16.4 0.49 1100
1N5337B 4.7 260 2 450 5 1 15.3 0.44 1010
1N5338B 5.1 240 1.5 400 1 1 14.4 0.39 930
1N5339B 5.6 220 1 400 1 2 13.4 0.25 865
1N5340B 6 200 1 300 1 3 12.7 0.19 790
1N5341B 6.2 200 1 200 1 3 12.4 0.1 765
1N5342B 6.8 175 1 200 10 5.2 11.5 0.15 700
1N5343B 7.5 175 1.5 200 10 5.7 10.7 0.15 630
1N5344B 8.2 150 1.5 200 10 6.2 10 0.2 580
1N5345B 8.7 150 2 200 10 6.6 9.5 0.2 545
1N5346B 9.1 150 2 150 7.5 6.9 9.2 0.22 520
1N5347B 10 125 2 125 5 7.6 8.6 0.22 475
1N5348B 11 125 2.5 125 5 8.4 8 0.25 430
1N5349B 12 100 2.5 125 2 9.1 7.5 0.25 395
1N5350B 13 100 2.5 100 1 9.9 7 0.25 365
1N5351B 14 100 2.5 75 1 10.6 6.7 0.25 340
1N5352B 15 75 2.5 75 1 11.5 6.3 0.25 315
1N5353B 16 75 2.5 75 1 12.2 6 0.3 295
1N5354B 17 70 2.5 75 0.5 12.9 5.8 0.35 280
1N5355B 18 65 2.5 75 0.5 13.7 5.5 0.4 265
1N5356B 19 65 3 75 0.5 14.4 5.3 0.4 250
1N5357B 20 65 3 75 0.5 15.2 5.1 0.4 237
1N5358B 22 50 3.5 75 0.5 16.7 4.7 0.45 216
1N5359B 24 50 3.5 100 0.5 18.2 4.4 0.55 198
1N5360B 25 50 4 110 0.5 19 4.3 0.55 190
1N5361B 27 50 5 120 0.5 20.6 4.1 0.6 176
1N5362B 28 50 6 130 0.5 21.2 3.9 0.6 170
1N5363B 30 40 8 140 0.5 22.8 3.7 0.6 158
1N5364B 33 40 10 150 0.5 25.1 3.5 0.6 144
1N5365B 36 30 11 160 0.5 27.4 3.3 0.65 132
1N5366B 39 30 14 170 0.5 29.7 3.1 0.65 122
1N5367B 43 30 20 190 0.5 32.7 2.8 0.7 110
1N5368B 47 25 25 210 0.5 35.8 2.7 0.8 100
1N5369B 51 25 27 230 0.5 38.8 2.5 0.9 93
1N5370B 56 20 35 280 0.5 42.6 2.3 1 86
1N5371B 60 20 40 350 0.5 42.5 2.2 1.2 79
1N5372B 62 20 42 400 0.5 47.1 2.1 1.35 76
1N5373B 68 20 44 500 0.5 51.7 2 1.5 70
1N5374B 75 20 45 620 0.5 56 1.9 1.6 63
1N5375B 82 15 65 720 0.5 62.2 1.8 1.8 58
1N5376B 87 15 75 760 0.5 66 1.7 2 54.5
1N5377B 91 15 75 760 0.5 69.2 1.6 2.2 52.5
1N5378B 100 12 90 800 0.5 76 1.5 2.5 47.5
1N5379B 110 12 125 1000 0.5 83.6 1.4 2.5 43
1N5380B 120 10 170 1150 0.5 91.2 1.3 2.5 39.5
1N5381B 130 10 190 1250 0.5 98.8 1.2 2.5 36.6
1N5382B 140 8 230 1500 0.5 106 1.2 2.5 34
(continued)
Devices listed in bold, italic are Motorola preferred devices.

6-134
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted, VF = 1.2 Max @ IF = 1 A for all types)
Nominal Max Reverse Maximum
Zener Max Zener Impedance Leakage Current Max Regulator
Voltage Test Surge Max Voltage Current
JEDEC VZ @ IZT Current ZZT @IZT ZZK @ IZK = 1 mA Current Regulation IZM
Type No. Volts IZT Ohms Ohms IR @ VR ir, Amps ∆ VZ, Volt mA
(Note 1) (Note 2) mA (Note 2) (Note 2) µA Volts (Note 3) (Note 4) (Note 5)
1N5383B 150 8 330 1500 0.5 114 1.1 3 31.6
1N5384B 160 8 350 1650 0.5 122 1.1 3 29.4
1N5385B 170 8 380 1750 0.5 129 1 3 28
1N5386B 180 5 430 1750 0.5 137 1 4 26.4
1N5387B 190 5 450 1850 0.5 144 0.9 5 25
1N5388B 200 5 480 1850 0.5 152 0.9 5 23.6
NOTE 1. TOLERANCE AND TYPE NUMBER DESIGNATION NOTE 4. VOLTAGE REGULATION (∆VZ)
The JEDEC type numbers shown indicate a tolerance of ±5%.
Test conditions for voltage regulation are as follows: VZ measurements are made at 10% and
then at 50% of the IZ max value listed in the electrical characteristics table. The test current
time duration for each VZ measurement is 40 ± 10 ms. (TA = 25°C +8, –2°C). Mounting contact
NOTE 2. ZENER VOLTAGE (VZ) AND IMPEDANCE (ZZT & ZZK)
located as specified in Note 2.
Test conditions for zener voltage and impedance are as follows: IZ is applied 40 ± 10 ms prior
to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips
to the body of the diode. (TA = 25°C +8, –2°C). NOTE 5. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
it applies only to the B-suffix device. The actual IZM for any device may not exceed the value
NOTE 3. SURGE CURRENT (ir) of 5 watts divided by the actual VZ of the device. TL = 75°C at 3/8″ maximum from the device
Surge current is specified as the maximum allowable peak, non-recurrent square-wave cur- body.
rent with a pulse width, PW, of 8.3 ms. The data given in Figure 6 may be used to find the
maximum surge current for a square wave of any pulse width between 1ms and 1000 ms by
plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and
200 V zeners, are shown in Figure 7. Mounting contact located as specified in Note 3. (TA = Nominal zener voltages between the voltages shown and tighter voltage tolerance such as
25°C +8, –2°C.) ±1% and ±2%. Consult factory.
TEMPERATURE COEFFICIENTS
10 300
θVZ , TEMPERATURE COEFFICIENT
θVZ , TEMPERATURE COEFFICIENT
200
8
100
6
(mV/°C) @ I ZT
(mV/°C) @ I ZT
RANGE
50
4
30
2 20
RANGE
0 10
–2 5
3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 220
VZ, ZENER VOLTAGE @ IZT (VOLTS) VZ, ZENER VOLTAGE @ IZT (VOLTS)
Figure 2. Temperature Coefficient-Range Figure 3. Temperature Coefficient-Range

for Units 3 to 10 Volts for Units 10 to 220 Volts
Motorola TVS/Zener Device Data 5 Watt Surmetic 40 Data Sheet

6-135
θ JL (t, D), TRANSIENT THERMAL RESISTANCE
20
JUNCTION-TO-LEAD ( °C/W)
10 D = 0.5
5 D = 0.2 PPK t1
D = 0.1 t2
2
D = 0.05
1 DUTY CYCLE, D = t1/t2
D = 0.01 NOTE: BELOW 0.1 SECOND, THERMAL SINGLE PULSE ∆ TJL = θJL(t)PPK
0.5 NOTE: RESPONSE CURVE IS APPLICABLE REPETITIVE PULSES ∆ TJL = θJL(t, D)PPK
NOTE: TO ANY LEAD LENGTH (L).
D=0
0.2
0.00 0.00 0.01 0.05 0.1 0.5 1 5 10 20 50 100
1 5 t, TIME (SECONDS)
Figure 4. Typical Thermal Response
L, Lead Length = 3/8 Inch
θ JL, JUNCTION-TO-LEAD THERMAL RESISTANCE (°C/W)
40 40
i r , PEAK SURGE CURRENT (AMPS)

20
PW = 1 ms*
10
30
PW = 8.3 ms*
4
2
20
L L
1
10 0.4 *SQUARE WAVE PW = 100 ms*

PRIMARY PATH OF
CONDUCTION IS THROUGH 0.2
THE CATHODE LEAD PW = 1000 ms*
0 0.1
0 0.2 0.4 0.6 0.8 1 3 4 6 8 10 20 30 40 60 80 100 200
L, LEAD LENGTH TO HEAT SINK (INCH) NOMINAL VZ (V)
Figure 5. Typical Thermal Resistance Figure 6. Maximum Non-Repetitive Surge Current

versus Nominal Zener Voltage
(See Note 3)
30
20
i r , PEAK SURGE CURRENT (AMPS)
T = 25°C
10 VZ = 3.3 V 1000 TC = 25°C
5
100
2
1 10
0.5
VZ = 200 V
1
0.2 PLOTTED FROM INFORMATION
GIVEN IN FIGURE 6
0.1 0.1
1 10 100 100 1 2 3 4 5 6 7 8 9 10
PW, PULSE WIDTH (ms) 0 VZ, ZENER VOLTAGE (VOLTS)
Figure 7. Peak Surge Current versus Pulse Width Figure 8. Zener Voltage versus Zener Current
(See Note 3) VZ = 3.3 thru 10 Volts

6-136
1000
T = 25°C

100 100
10 10
1 1
0.1 0.1
10 20 30 40 50 60 70 80 80 100 120 140 160 180 200 220
Figure 9. Zener Voltage versus Zener Current Figure 10. Zener Voltage versus Zener Current
VZ = 11 thru 75 Volts VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given zener diode For worst-case design, using expected limits of IZ, limits of
is temperature dependent, it is necessary to determine junc- PD and the extremes of TJ (∆TJ) may be estimated. Changes
tion temperature under any set of operating conditions in order in voltage, VZ, can then be found from:
to calculate its value. The following procedure is recom- ∆V = θVZ ∆TJ
mended:
θVZ, the zener voltage temperature coefficient, is found from
Lead Temperature, TL, should be determined from:
Figures 2 and 3.
TL = θLA PD + TA
Under high power-pulse operation, the zener voltage will
θLA is the lead-to-ambient thermal resistance and PD is the vary with time and may also be affected significantly by the
power dissipation. zener resistance. For best regulation, keep current excursions
Junction Temperature, TJ, may be found from: as low as possible.
TJ = TL + ∆TJL Data of Figure 4 should not be used to compute surge capa-
bility. Surge limitations are given in Figure 6. They are lower
∆TJL is the increase in junction temperature above the lead than would be expected by considering only junction tempera-
temperature and may be found from Figure 4 for a train of ture, as current crowding effects cause temperatures to be ex-
power pulses or from Figure 5 for dc power. tremely high in small spots resulting in device degradation
∆TJL = θJL PD should the limits of Figure 6 be exceeded.

6-137
5 Watt Surmetic 40
B
NOTE:
1. LEAD DIAMETER & FINISH NOT CONTROLLED
D WITHIN DIM F.
K
INCHES MILLIMETERS
F DIM MIN MAX MIN MAX
2
A 0.330 0.350 8.38 8.89
B 0.130 0.145 3.30 3.68
D 0.037 0.043 0.94 1.09
A F — 0.050 — 1.27
K 1.000 1.250 25.40 31.75
1
F
K
CASE 17-02
PLASTIC

REQUIREMENTS
Tape and Reel RL 4K

Tape and Ammo TA 2K

6-138
Chaves Óticas
CROMAX ELETRÔNICA LTDA.
PASTILHA
AlGaAs – Emissor
NPN – Fototransistor
ATUAÇÃO
Refletiva
ELEMENTOS
Emissor – Hialino
Sensor – Fume
ESPECIFICAÇÕES TÉCNICAS
Parâmetro Cond. Teste Min. Típ. Máx. 18,1±0,2
Tensão Reversa If = 100mA 1,3V 1,7V 9,7±0,2 5,1±0,2
(Vf) If = 20mA 1,2V 1,5V
2,65±0,2
IN Corrente Reversa Vr = 4V 10µA

(If)
R1
3,8±0,2
Comprimento de If = 100mA 940nm
.6
18,35±0,4
onda
TensãodeRuptura Ic = 100µA 30V
C – E (Vbceo) Ib = 0
Tensão deRuptura Ie = 100µA 5V
OUT E – C (Vbeco) Ib = 0
Corrente “Escuro” Vce = 10V 0,1µA
(Iceo)
Corrente “Claro” Vce = 5V 50µA
(IL) If = 40mA
10,0±0,4
Ponto indica o Fototransistor
CHAVE DE CODIGO
C 7L3
CROMAX ELETRÔNICA LTDA.

RUA PEREIRO, 13 – BAIRRO VILA NOVA CUMBICA – CEP 07231-010 – GUARULHOS – SP
Fone: (0xx11) 6462-2100 – Fax: (0xx11) 6462-2111 Site: www.cromatek.com.br – Email: cromatek@cromatek.com.br
LM117/217
 LM317
1.2V TO 37V VOLTAGE REGULATOR
■ OUTPUT VOLTAGE RANGE : 1.2 TO 37V

■ OUTPUT CURRENT IN EXCESS OF 1.5A
■ 0.1% LINE AND LOAD REGULATION
■ FLOATING OPERATION FOR HIGH
VOLTAGES
■ COMPLETE SERIES OF PROTECTIONS :
CURRENT LIMITING, THERMAL
SHUTDOWN AND SOA CONTROL
DESCRIPTION
The LM117/LM217/LM317 are monolithic
integrated circuit in TO-220, ISOWATT220, TO-3 TO-3 D2PAK
and D2PAK packages intended for use as
positive adjustable voltage regulators.
They are designed to supply more than 1.5A of
load current with an output voltage adjustable
over a 1.2 to 37V range.
The nominal output voltage is selected by means
of only a resistive divider, making the device
exceptionally easy to use and eliminating the
stocking of many fixed regulators.
TO-220 ISOWATT220
ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit
V i-o Input-output Differential Voltage 40 V
IO Output Current Intenrally Limited
o
T op Operating Junction Temperature for: LM117 -55 to 150 C
o
LM217 -25 to 150 C
o
LM317 0 to 125 C
P tot Power Dissipation Internally Limited
o
T st g Storage Temperature - 65 to 150 C
THERMAL DATA
Symbol Parameter TO-3 TO-220 ISOWATT220 D2PAK Unit
o
R thj- ca se Thermal Resistance Junction-case Max 4 3 4 3 C/W
o
R thj- amb Thermal Resistance Junction-ambient Max 35 50 60 62.5 C/W
November 1999 1/11

LM117/217/317
CONNECTION DIAGRAM AND ORDERING NUMBERS (top view)
TO-220 ISOWATT220
D2PAK TO-3
2
Type TO-3 TO-220 ISOWATT220 D PAK
LM117 LM117K
LM217 LM217K LM217T LM217D2T
LM317 LM317K LM317T LM317P LM317D2T
SCHEMATIC DIAGRAM
2/11
LM117/217/317
BASIC ADJUSTABLE REGULATOR
ELECTRICAL CHARACTERISTICS (Vi - Vo = 5 V, Io = 500 mA, IMAX = 1.5A and PMAX = 20W, unless
otherwise specified)
Symbol Parameter Test Conditions LM117/LM217 LM317 Unit
Min. Typ. Max. Min. Typ. Max.
∆V o Line Regulation Vi - Vo = 3 to 40 V T j = 25 o C 0.01 0.02 0.01 0.04 %/V
0.02 0.05 0.02 0.07 %/V
o
∆V o Load Regulation Vo ≤ 5V T j = 25 C 5 15 5 25 mV
Io = 10 mA to IMAX 20 50 20 70 mV
o
Vo ≥ 5V T j = 25 C 0.1 0.3 0.1 0.5 %
Io = 10 mA to IMAX 0.3 1 0.3 1.5 %
I ADJ Adjustment Pin Current 50 100 50 100 µA
∆I ADJ Adjustment Pin Current Vi - Vo = 2.5 to 40 V 0.2 5 0.2 5 µA
Io = 10 mA to IMAX
V REF Reference Voltage Vi - Vo = 2.5 to 40 V 1.2 1.25 1.3 1.2 1.25 1.3 V
(between pin 3 and pin Io = 10 mA to IMAX
1) PD ≤ PMAX
∆ Vo Output Voltage 1 1 %
Vo Temperature Stability
I o (m in) Minimum Load Current Vi - Vo = 40 V 3.5 5 3.5 10 mA
I o (max ) Maximum Load Vi - Vo ≤ 15 V 1.5 2.2 1.5 2.2 A
Current PD < PMAX
Vi - Vo = 40 V 0.4 0.4 A
PD < PMAX
o
Tj = 25 C
eN Output Noise Voltage B = 10Hz to 10KHz 0.003 0.003 %
(percentance of VO) Tj = 25 oC
SVR Supply Voltage Tj = 25 oC C ADJ =0 65 65 dB
Rejection (*) f = 120 Hz 66 80 66 80 dB
C ADJ =10µF
(*) CADJ is connected between pin 1 and ground.

Note:
(1) Unless otherwise specified the above specs, apply over the following conditions : LM 117 Tj = – 55 to 150°C;
LM 217 Tj = – 25 to 150°C ; LM 317 Tj = 0 to 125°C.
3/11
LM117/217/317
Figure 1 : Output Current vs. Input-output Figure 2 : Dropout Voltage vs. Junction
Differential Voltage. Temperature.
Figure 3 : Reference Voltage vs. Junction Figure 4 : Basic Adjustable Regulator.
APPLICATION INFORMATION
The LM117/217/317 provides an internal voltage, supplies of very high voltage with respect
reference voltage of 1.25V between the output to ground can be regulated as long as the
and adjustments terminals. This is used to set a maximum input-to-output differential is not
constant current flow across an external resistor exceeded. Furthermore, programmable regulator
divider (see fig. 4), giving an output voltage VO of: are easily obtainable and, by connecting a fixed
R2 resistor between the adjustment and output, the
VO = VREF ( 1 + ) + IADJ R2 device can be used as a precision current
R1
regulator.
The device was designed to minimize the term
IADJ (100µA max) and to maintain it very constant In order to optimise the load regulation, the
with line and load changes. Usually, the error current set resistor R1 (see fig. 4) should be tied
as close as possible to the regulator, while the
term IADJ ⋅ R2 can be neglected. To obtain the
ground terminal of R2 should be near the ground
previous requirement, all the regulator quiescent
of the load to provide remote ground sensing.
current is returned to the output terminal,
imposing a minimum load current condition. If the Performance may be improved with added
load is insufficient, the output voltage will rise. capacitance as follow:
Since the LM117/217317 is a floating regulator An input bypass capacitor of 0.1µF
and ”sees” only the input-to-output differential An adjustment terminal to ground 10µF capacitor
4/11
LM117/217/317
to improve the ripple rejection of about 15 dB practice to add protection diodes, as shown in
(CADJ). fig.5.
An 1µF tantalium (or 25µFAluminium electrolitic) D1 protect the device against input short circuit,
capacitor on the output to improve transient while D2 protect against output short circuit for
response. capacitance discharging.
In additional to external capacitors, it is good
Figure 5 : Voltage Regulator with Protection Diodes.
D1 protect the device against input short circuit, while D2 protects against output short circuit for capacitors discharging
Figure 6 : Slow Turn-on 15V Regulator. Figure 7 : Current Regulator.
Vr ef 1.25V
Io = + IADJ ≈
R1 R1
5/11
LM117/217/317
Figure 8 : 5V Electronic Shut-down Regulator Figure 9 : Digitally Selected Outputs
(R2 sets maximum Vo)
Figure 10 : Battery Charger (12V) Figure 11 : Current Limited 6V Charger
* RS sets output impedance of charger

R2
Zo = RS (1 + ) * R3 sets peak current (0.6A for 1Ω).
R1
Use of RS allows low charging rates with fully charged battery. ** C1 recommended to filter out input transients.
6/11
LM117/217/317
TO-3 (R) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.7 0.460
B 0.96 1.10 0.037 0.043
C 1.70 0.066
D 8.7 0.342
E 20.0 0.787
G 10.9 0.429
N 16.9 0.665
P 26.2 1.031
R 3.88 4.09 0.152 0.161
U 39.50 1.555
V 30.10 1.185
A D
P
G C E
U
B
O
N
P003N
7/11
LM117/217/317
TO-220 MECHANICAL DATA
mm inch
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A
D
C
D1
L2
F1
G1
H2
G
Dia.
F
F2
L5
L9
L7
L6 L4
P011C
8/11
LM117/217/317
ISOWATT220 MECHANICAL DATA
mm inch
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
E
A
D
B
L3
L6
L7
F1
¯
G1
G
H
F2
1 2 3
L2 L4
P011G
9/11
LM117/217/317
TO-263 (D2PAK) MECHANICAL DATA
mm inch
DIM.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
A
A2
C
C2 DETAIL”A”
DETAIL”A”
A1
B2 B
E G
L2 L L3
P011P6/F
10/11
LM117/217/317
Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
11/11
LM137/LM337 3-Terminal Adjustable Negative Regulators
November 2001
LM137/LM337
3-Terminal Adjustable Negative Regulators
General Description n Excellent thermal regulation, 0.002%/W
n 77 dB ripple rejection
The LM137/LM337 are adjustable 3-terminal negative volt-
n Excellent rejection of thermal transients
age regulators capable of supplying in excess of −1.5A over
an output voltage range of −1.2V to −37V. These regulators n 50 ppm/˚C temperature coefficient
are exceptionally easy to apply, requiring only 2 external n Temperature-independent current limit
resistors to set the output voltage and 1 output capacitor for n Internal thermal overload protection
frequency compensation. The circuit design has been opti- n P+ Product Enhancement tested
mized for excellent regulation and low thermal transients. n Standard 3-lead transistor package
Further, the LM137 series features internal current limiting, n Output is short circuit protected
thermal shutdown and safe-area compensation, making
them virtually blowout-proof against overloads.
LM137 Series Packages and Power Capability
The LM137/LM337 serve a wide variety of applications in-
cluding local on-card regulation, programmable-output volt- Rated Design
age regulation or precision current regulation. The LM137/ Device Package Power Load
LM337 are ideal complements to the LM117/LM317
adjustable positive regulators. Dissipation Current
LM137/337 TO-3 (K) 20W 1.5A
Features TO-39 (H) 2W 0.5A
n Output voltage adjustable from −1.2V to −37V LM337 TO-220 (T) 15W 1.5A
n 1.5A output current guaranteed, −55˚C to +150˚C LM337 SOT-223 2W 1A
n Line regulation typically 0.01%/V (MP)
n Load regulation typically 0.3%
Typical Applications Comparison between SOT-223 and

Adjustable Negative Voltage Regulator D-Pak (TO-252) Packages
00906731
Scale 1:1
00906701
Full output current not available at high input-output voltages
†C1 = 1 µF solid tantalum or 10 µF aluminum electrolytic required for

stability
*C2 = 1 µF solid tantalum is required only if regulator is more than 4" from
power-supply filter capacitor
Output capacitors in the range of 1 µF to 1000 µF of aluminum or tantalum
electrolytic are commonly used to provide improved output impedance and
rejection of transients
© 2001 National Semiconductor Corporation DS009067 www.national.com

LM137/LM337
Absolute Maximum Ratings (Notes 1, LM337 0˚C to +125˚C
4) LM337I −40˚C to +125˚C
If Military/Aerospace specified devices are required, Storage Temperature −65˚C to +150˚C
please contact the National Semiconductor Sales Office/ Lead Temperature (Soldering, 10 sec.) 300˚C
Distributors for availability and specifications. Plastic Package (Soldering, 4 sec.) 260˚C
Power Dissipation Internally Limited ESD Rating 2k Volts
Input-Output Voltage Differential 40V
Operating Junction Temperature
Range
LM137 −55˚C to +150˚C
Electrical Characteristics (Note 1)

Parameter Conditions LM137 LM337 Units
Min Typ Max Min Typ Max
Line Regulation Tj = 25˚C, 3V ≤ |VIN − VOUT| ≤ 40V 0.01 0.02 0.01 0.04 %/V
(Note 2) IL = 10 mA
Load Regulation Tj = 25˚C, 10 mA ≤ IOUT ≤ IMAX 0.3 0.5 0.3 1.0 %
Thermal Regulation Tj = 25˚C, 10 ms Pulse 0.002 0.02 0.003 0.04 %/W
Adjustment Pin Current 65 100 65 100 µA
Adjustment Pin Current Charge 10 mA ≤ IL ≤ IMAX 2 5 2 5 µA
3.0V ≤ |VIN − VOUT| ≤ 40V,
TA = 25˚C
Reference Voltage Tj = 25˚C (Note 3) −1.225 −1.250 −1.275 −1.213 −1.250 −1.287 V
3V ≤ |VIN − VOUT| ≤ 40V, (Note 3) −1.200 −1.250 −1.300 −1.200 −1.250 −1.300 V
10 mA ≤ IOUT ≤ IMAX, P ≤ PMAX
Line Regulation 3V ≤ |VIN − VOUT| ≤ 40V, (Note 2) 0.02 0.05 0.02 0.07 %/V
Load Regulation 10 mA ≤ IOUT ≤ IMAX, (Note 2) 0.3 1 0.3 1.5 %
Temperature Stability TMIN ≤ Tj ≤ TMAX 0.6 0.6 %
Minimum Load Current |VIN − VOUT| ≤ 40V 2.5 5 2.5 10 mA
|VIN − VOUT| ≤ 10V 1.2 3 1.5 6 mA
Current Limit |VIN − VOUT| ≤ 15V
K, MP and T Package 1.5 2.2 3.5 1.5 2.2 3.7 A
H Package 0.5 0.8 1.8 0.5 0.8 1.9 A
|VIN − VOUT| = 40V, Tj = 25˚C
K, MP and T Package 0.24 0.4 0.15 0.4 A
H Package 0.15 0.17 0.10 0.17 A
RMS Output Noise, % of VOUT Tj = 25˚C, 10 Hz ≤ f ≤ 10 kHz 0.003 0.003 %
Ripple Rejection Ratio VOUT = −10V, f = 120 Hz 60 60 dB
CADJ = 10 µF 66 77 66 77 dB
Long-Term Stability Tj = 125˚C, 1000 Hours 0.3 1 0.3 1 %
Thermal Resistance, Junction to H Package 12 15 12 15 ˚C/W
Case K Package 2.3 3 2.3 3 ˚C/W
T Package 4 ˚C/W
Thermal Resistance, Junction to H Package 140 140 ˚C/W
Ambient (No Heat Sink) K Package 35 35 ˚C/W
T Package 50 ˚C/W
MP Package 170 ˚C/W
Note 1: Unless otherwise specified, these specifications apply −55˚C ≤ Tj ≤ +150˚C for the LM137, 0˚C ≤ Tj ≤ +125˚C for the LM337; VIN − VOUT = 5V; and IOUT
= 0.1A for the TO-39 package and IOUT = 0.5A for the TO-3, SOT-223 and TO-220 packages. Although power dissipation is internally limited, these specifications
are applicable for power dissipations of 2W for the TO-39 and SOT-223 (see Application Hints), and 20W for the TO-3, and TO-220. IMAX is 1.5A for the TO-3,
SOT-223 and TO-220 packages, and 0.2A for the TO-39 package.
Note 2: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects are
covered under the specification for thermal regulation. Load regulation is measured on the output pin at a point 1⁄8" below the base of the TO-3 and TO-39 packages.
www.national.com 2
LM137/LM337
Electrical Characteristics (Note 1) (Continued)
Note 3: Selected devices with tightened tolerance reference voltage available.
Note 4: Refer to RETS137H drawing for LM137H or RETS137K drawing for LM137K military specifications.
Schematic Diagram
00906702
Thermal Regulation
When power is dissipated in an IC, a temperature gradient
occurs across the IC chip affecting the individual IC circuit
components. With an IC regulator, this gradient can be es-
pecially severe since power dissipation is large. Thermal
regulation is the effect of these temperature gradients on
output voltage (in percentage output change) per Watt of
power change in a specified time. Thermal regulation error is
independent of electrical regulation or temperature coeffi-
cient, and occurs within 5 ms to 50 ms after a change in
power dissipation. Thermal regulation depends on IC layout
as well as electrical design. The thermal regulation of a
voltage regulator is defined as the percentage change of 00906703
VOUT, per Watt, within the first 10 ms after a step of power is LM137, VOUT = −10V
applied. The LM137’s specification is 0.02%/W, max. VIN − VOUT = −40V
IIL = 0A → 0.25A → 0A
Vertical sensitivity, 5 mV/div
FIGURE 1.
3 www.national.com
LM137/LM337
Thermal Regulation (Continued)
In Figure 1, a typical LM137’s output drifts only 3 mV (or

0.03% of VOUT = −10V) when a 10W pulse is applied for
10 ms. This performance is thus well inside the specification
limit of 0.02%/W x 10W = 0.2% max. When the 10W pulse is
ended, the thermal regulation again shows a 3 mV step at
the LM137 chip cools off. Note that the load regulation error
of about 8 mV (0.08%) is additional to the thermal regulation
error. In Figure 2, when the 10W pulse is applied for 100 ms,
the output drifts only slightly beyond the drift in the first
10 ms, and the thermal error stays well within 0.1% (10 mV).
00906704
LM137, VOUT = −10V
VIN − VOUT = −40V
IL = 0A → 0.25A → 0A
Horizontal sensitivity, 20 ms/div
FIGURE 2.
Connection Diagrams
TO-3 TO-220
Metal Can Package Plastic Package
00906705
Bottom View
Order Number LM137K/883
LM137KPQML and LM137KPQMLV(Note 5)
See NS Package Number K02C
Order Number LM337K STEEL
See NS Package Number K02A
Case is Input
TO-39
00906707
Metal Can Package
Front View
Order Number LM337T
See NS Package Number T03B
3-Lead SOT-223
00906706
Bottom View
Order Number LM137H, LM137H/883 or LM337H
LM137HPQML and LM137HPQMLV(Note 5) 00906734
See NS Package Number H03A Front View

Order Number LM337IMP
Case Is Input
Package Marked N02ASee NS Package Number MA04A
Note 5: See STD Mil DWG 5962P99517 for Radiation Tolerant Devices
www.national.com 4
LM137/LM337
Application Hints Typical Applications
When a value for θ(H−A) is found using the equation shown, Adjustable Lab Voltage Regulator
a heatsink must be selected that has a value that is less than
or equal to this number.
HEATSINKING SOT-223 PACKAGE PARTS

The SOT-223 (“MP”) packages use a copper plane on the
PCB and the PCB itself as a heatsink. To optimize the heat
sinking ability of the plane and PCB, solder the tab of the
package to the plane.
Figures 3, 4 show the information for the SOT-223 package.
Figure 4 assumes a θ(J−A) of 75˚C/W for 1 ounce copper and
51˚C/W for 2 ounce copper and a maximum junction tem-
perature of 125˚C.
00906709
Full output current not available
at high input-output voltages
*The 10 µF capacitors are optional to improve ripple rejection
Current Regulator
00906732
FIGURE 3. θ(J−A) vs Copper (2 ounce) Area for the

SOT-223 Package
00906711
Negative Regulator with Protection Diodes
00906733
FIGURE 4. Maximum Power Dissipation vs. TAMB for

the SOT-223 Package
Please see AN1028 for power enhancement techniques to
be used with the SOT-223 package. 00906713
*When CL is larger than 20 µF, D1 protects the LM137 in case the input
supply is shorted
**When C2 is larger than 10 µF and −VOUT is larger than −25V, D2
protects the LM137 in case the output is shorted
5 www.national.com
LM137/LM337
Typical Applications (Continued) High Stability −10V Regulator
−5.2V Regulator with Electronic Shutdown*
00906714
00906710
*Minimum output . −1.3V when control input is low
Adjustable Current Regulator
00906712
www.national.com 6
LM137/LM337
Typical Performance Characteristics (K Steel and T Packages)
Load Regulation Current Limit
00906716
00906717
Adjustment Current Dropout Voltage
00906718 00906719
Temperature Stability Minimum Operating Current
00906720
00906721
7 www.national.com
LM137/LM337
Typical Performance Characteristics (K Steel and T Packages) (Continued)
Ripple Rejection Ripple Rejection
00906722 00906723
Ripple Rejection Output Impedance
00906724 00906725
Line Transient Response Load Transient Response
00906726
00906727
www.national.com 8
LM137/LM337
Physical Dimensions inches (millimeters)
unless otherwise noted
Metal Can Package (H)

Order Number LM137H, LM137H/883 or LM337H
NS Package Number H03A
9 www.national.com
LM137/LM337
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Metal Can Package (K)

Order Number LM337K STEEL
NS Package Number K02A
Mil-Aero Metal Can Package (K)

Order Number LM137K/883
NS Package Number K02C
www.national.com 10
LM137/LM337
3-Lead SOT-223 Package

Order Number LM337IMP
NS Package Number M04A
11 www.national.com
LM137/LM337 3-Terminal Adjustable Negative Regulators
TO-220 Plastic Package (T)

Order Number LM337T
NS Package Number T03B
LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform
into the body, or (b) support or sustain life, and can be reasonably expected to cause the failure of
whose failure to perform when properly used in the life support device or system, or to affect its
accordance with instructions for use provided in the safety or effectiveness.
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor
Corporation Europe Asia Pacific Customer Japan Ltd.
Americas Fax: +49 (0) 180-530 85 86 Response Group Tel: 81-3-5639-7560
Email: support@nsc.com Email: europe.support@nsc.com Tel: 65-2544466 Fax: 81-3-5639-7507
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English Tel: +44 (0) 870 24 0 2171 Email: ap.support@nsc.com
www.national.com Français Tel: +33 (0) 1 41 91 8790
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
www.fairchildsemi.com
MC78XX/LM78XX/MC78XXA
3-Terminal 1A Positive Voltage Regulator
Features Description
• Output Current up to 1A The MC78XX/LM78XX/MC78XXA series of three
• Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24V terminal positive regulators are available in the
• Thermal Overload Protection TO-220/D-PAK package and with several fixed output
• Short Circuit Protection voltages, making them useful in a wide range of
• Output Transistor Safe Operating Area Protection applications. Each type employs internal current limiting,
thermal shut down and safe operating area protection,
making it essentially indestructible. If adequate heat sinking
is provided, they can deliver over 1A output current.
Although designed primarily as fixed voltage regulators,
these devices can be used with external components to
obtain adjustable voltages and currents.
TO-220
1
D-PAK
1
1. Input 2. GND 3. Output
Internal Block Digram
Rev. 1.0.0
©2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings

Parameter Symbol Value Unit
Input Voltage (for VO = 5V to 18V) VI 35 V
(for VO = 24V) VI 40 V
o
Thermal Resistance Junction-Cases (TO-220) RθJC 5 C/W
Thermal Resistance Junction-Air (TO-220) RθJA 65 oC/W
o
Operating Temperature Range TOPR 0 ~ +125 C
o
Storage Temperature Range TSTG -65 ~ +150 C
Electrical Characteristics (MC7805/LM7805)

(Refer to test circuit ,0°C < TJ < 125°C, IO = 500mA, VI = 10V, CI= 0.33µF, CO= 0.1µF, unless otherwise specified)
MC7805/LM7805
Parameter Symbol Conditions Unit
Min. Typ. Max.
TJ =+25 oC 4.8 5.0 5.2
Output Voltage VO 5.0mA ≤ Io ≤ 1.0A, PO ≤ 15W
V
VI = 7V to 20V 4.75 5.0 5.25
VO = 7V to 25V - 4.0 100
Line Regulation (Note1) Regline TJ=+25 oC mV
VI = 8V to 12V - 1.6 50
IO = 5.0mA to1.5A - 9 100
Load Regulation (Note1) Regload TJ=+25 oC IO =250mA to mV
- 4 50
750mA
Quiescent Current IQ TJ =+25 oC - 5.0 8.0 mA
IO = 5mA to 1.0A - 0.03 0.5
Quiescent Current Change ∆IQ mA
VI= 7V to 25V - 0.3 1.3
Output Voltage Drift ∆VO/∆T IO= 5mA - -0.8 - mV/ oC
Output Noise Voltage VN f = 10Hz to 100KHz, TA=+25 oC - 42 - µV/Vo
f = 120Hz
Ripple Rejection RR 62 73 - dB
VO = 8V to 18V
Dropout Voltage VDrop IO = 1A, TJ =+25 oC - 2 - V
Output Resistance rO f = 1KHz - 15 - mΩ
Short Circuit Current ISC VI = 35V, TA =+25 oC - 230 - mA
o
Peak Current IPK TJ =+25 C - 2.2 - A
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty is used.
2
Electrical Characteristics (MC7806)

(Refer to test circuit ,0°C < TJ < 125°C, IO = 500mA, VI =11V, CI= 0.33µF, CO= 0.1µF, unless otherwise specified)
MC7806
Min. Typ. Max.
TJ =+25 oC 5.75 6.0 6.25
Output Voltage VO 5.0mA ≤ IO ≤ 1.0A, PO ≤ 15W
V
VI = 8.0V to 21V 5.7 6.0 6.3
VI = 8V to 25V - 5 120
Line Regulation (Note1) Regline TJ =+25 oC mV
VI = 9V to 13V - 1.5 60
IO =5mA to 1.5A - 9 120
Load Regulation (Note1) Regload TJ =+25 oC mV
IO =250mA to750A - 3 60
IO = 5mA to 1A - - 0.5
VI = 8V to 25V - - 1.3
Output Voltage Drift ∆VO/∆T IO = 5mA - -0.8 - mV/ oC
Output Noise Voltage VN f = 10Hz to 100KHz, TA =+25 oC - 45 - µV/Vo
f = 120Hz
VI = 9V to 19V
Short Circuit Current ISC VI= 35V, TA =+25 oC - 250 - mA
Peak Current IPK TJ =+25 oC - 2.2 - A
Note:
1. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken
3

MC7808
Min. Typ. Max.
TJ =+25 oC 7.7 8.0 8.3
V
VI = 10.5V to 23V 7.6 8.0 8.4
VI = 10.5V to 25V - 5.0 160
VI = 11.5V to 17V - 2.0 80
IO = 5.0mA to 1.5A - 10 160
IO= 250mA to 750mA - 5.0 80
IO = 5mA to 1.0A - 0.05 0.5
VI = 10.5A to 25V - 0.5 1.0
Ripple Rejection RR f = 120Hz, VI= 11.5V to 21.5V 56 73 - dB
o
Dropout Voltage VDrop IO = 1A, TJ=+25 C - 2 - V
o
Note:
4

MC7809
Min. Typ. Max.
TJ =+25°C 8.65 9 9.35
Output Voltage VO 5.0mA≤ IO ≤1.0A, PO ≤15W
V
VI= 11.5V to 24V 8.6 9 9.4
VI = 11.5V to 25V - 6 180
Line Regulation (Note1) Regline TJ=+25°C mV
VI = 12V to 17V - 2 90
IO = 5mA to 1.5A - 12 180
Load Regulation (Note1) Regload TJ=+25°C mV
IO = 250mA to 750mA - 4 90
Quiescent Current IQ TJ=+25°C - 5.0 8.0 mA
IO = 5mA to 1.0A - - 0.5
VI = 11.5V to 26V - - 1.3
Output Voltage Drift ∆VO/∆T IO = 5mA - -1 - mV/ °C
Output Noise Voltage VN f = 10Hz to 100KHz, TA =+25 °C - 58 - µV/Vo
Ripple Rejection f = 120Hz
RR 56 71 - dB
VI = 13V to 23V
Dropout Voltage VDrop IO = 1A, TJ=+25°C - 2 - V
Short Circuit Current ISC VI= 35V, TA =+25°C - 250 - mA
Peak Current IPK TJ= +25°C - 2.2 - A
Note:
5

(Refer to test circuit ,0°C< TJ < 125°C, IO = 500mA, VI =16V, CI= 0.33µF, CO=0.1µF, unless otherwise specified)
MC7810
Min. Typ. Max.
TJ =+25 °C 9.6 10 10.4
Output Voltage VO 5.0mA ≤ IO≤1.0A, PO ≤15W
V
VI = 12.5V to 25V 9.5 10 10.5
VI = 12.5V to 25V - 10 200
Line Regulation (Note1) Regline TJ =+25°C mV
VI = 13V to 25V - 3 100
IO = 5mA to 1.5A - 12 200
Load Regulation (Note1) Regload TJ =+25°C mV
IO = 250mA to 750mA - 4 400
Quiescent Current IQ TJ =+25°C - 5.1 8.0 mA
IO = 5mA to 1.0A - - 0.5
VI = 12.5V to 29V - - 1.0
Output Voltage Drift ∆VO/∆T IO = 5mA - -1 - mV/°C
Output Noise Voltage VN f = 10Hz to 100KHz, TA =+25 °C - 58 - µV/Vo
f = 120Hz
VI = 13V to 23V
Dropout Voltage VDrop IO = 1A, TJ=+25 °C - 2 - V
Short Circuit Current ISC VI = 35V, TA=+25 °C - 250 - mA
Peak Current IPK TJ =+25 °C - 2.2 - A
Note:
6

(Refer to test circuit ,0°C < TJ < 125°C, IO = 500mA, VI =19V, CI= 0.33µF, CO=0.1µF, unless otherwise specified)
MC7812
Min. Typ. Max.
TJ =+25 oC 11.5 12 12.5
Output Voltage VO 5.0mA ≤ IO≤1.0A, PO≤15W
V
VI = 14.5V to 27V 11.4 12 12.6
VI = 14.5V to 30V - 10 240
VI = 16V to 22V - 3.0 120
IO = 5mA to 1.5A - 11 240
IO = 250mA to 750mA - 5.0 120
IO = 5mA to 1.0A - 0.1 0.5
VI = 14.5V to 30V - 0.5 1.0
Output Voltage Drift ∆VO/∆T IO = 5mA - -1 - mV/ oC
f = 120Hz
VI = 15V to 25V
Dropout Voltage VDrop IO = 1A, TJ=+25 oC - 2 - V
Peak Current IPK TJ = +25 oC - 2.2 - A
Note:
7

MC7815
Min. Typ. Max.
TJ =+25 oC 14.4 15 15.6
V
VI = 17.5V to 30V 14.25 15 15.75
VI = 17.5V to 30V - 11 300
VI = 20V to 26V - 3 150
IO = 5mA to 1.5A - 12 300
Load Regulation (Note1) Regload TJ =+25 oC IO = 250mA to mV
- 4 150
750mA
IO = 5mA to 1.0A - - 0.5
VI = 17.5V to 30V - - 1.0
Output Noise Voltage VN f = 10Hz to 100KHz, TA =+25 C o
- 90 - µV/Vo
f = 120Hz
VI = 18.5V to 28.5V
Short Circuit Current ISC VI = 35V, TA=+25 oC - 250 - mA
o
Note:
8

MC7818
Min. Typ. Max.
TJ =+25 oC 17.3 18 18.7
Output Voltage VO 5.0mA ≤ IO ≤1.0A, PO ≤15W
V
VI = 21V to 33V 17.1 18 18.9
VI = 21V to 33V - 15 360
VI = 24V to 30V - 5 180
IO = 5mA to 1.5A - 15 360
IO = 250mA to 750mA - 5.0 180
IO = 5mA to 1.0A - - 0.5
VI = 21V to 33V - - 1
f = 120Hz
VI = 22V to 32V
Note:
9

MC7824
Min. Typ. Max.
TJ =+25 oC 23 24 25
V
VI = 27V to 38V 22.8 24 25.25
VI = 27V to 38V - 17 480
VI = 30V to 36V - 6 240
IO = 5mA to 1.5A - 15 480
IO = 250mA to 750mA - 5.0 240
IO = 5mA to 1.0A - 0.1 0.5
VI = 27V to 38V - 0.5 1
f = 120Hz
VI = 28V to 38V
Short Circuit Current ISC VI = 35V, TA=+25 oC - 230 - mA
Note:
10
Electrical Characteristics (MC7805A)

(Refer to the test circuits. 0°C < TJ < 125°C, Io =1A, V I = 10V, C I=0.33µF, C O=0.1µF, unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Unit

TJ =+25 oC 4.9 5 5.1
Output Voltage VO IO = 5mA to 1A, PO ≤ 15W V
4.8 5 5.2
VI = 7.5V to 20V
VI = 7.5V to 25V
- 5 50
IO = 500mA
Line Regulation (Note1) VI = 8V to 12V - 3 50
Regline mV
VI= 7.3V to 20V - 5 50
TJ =+25 oC
VI= 8V to 12V - 1.5 25
TJ =+25 oC
- 9 100
Load Regulation (Note1) IO = 5mA to 1.5A
Regload mV
IO = 5mA to 1A - 9 100
IO = 250mA to 750mA - 4 50
Quiescent Current IQ TJ =+25 oC - 5.0 6 mA
IO = 5mA to 1A - - 0.5
Quiescent Current
∆IQ VI = 8 V to 25V, IO = 500mA - - 0.8 mA
Change
VI = 7.5V to 20V, TJ =+25 oC - - 0.8
Output Voltage Drift ∆V/∆T Io = 5mA - -0.8 - mV/ oC
f = 10Hz to 100KHz
Output Noise Voltage VN - 10 - µV/Vo
TA =+25 oC
f = 120Hz, IO = 500mA
Ripple Rejection RR - 68 - dB
VI = 8V to 18V
Peak Current IPK TJ= +25 oC - 2.2 - A
Note:
1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken
11

(Refer to the test circuits. 0°C < TJ < 125°C, Io =1A, V I =11V, C I=0.33µF, C O=0.1µF, unless otherwise specified)

TJ =+25 oC 5.58 6 6.12
5.76 6 6.24
VI = 8.6V to 21V
VI= 8.6V to 25V
- 5 60
IO = 500mA
Line Regulation (Note1) VI= 9V to 13V - 3 60
Regline mV
VI= 8.3V to 21V - 5 60
TJ =+25 oC
VI= 9V to 13V - 1.5 30
TJ =+25 oC
- 9 100
Regload mV
IO = 5mA to 1A - 4 100
IO = 250mA to 750mA - 5.0 50
Quiescent Current IQ TJ =+25 oC - 4.3 6 mA
IO = 5mA to 1A - - 0.5
Quiescent Current Change ∆IQ VI = 9V to 25V, IO = 500mA - - 0.8 mA
VI= 8.5V to 21V, TJ =+25 oC - - 0.8
Output Voltage Drift ∆V/∆T IO = 5mA - -0.8 - mV/ oC
f = 10Hz to 100KHz
TA =+25 oC
f = 120Hz, IO = 500mA
VI = 9V to 19V
Peak Current IPK TJ=+25 oC - 2.2 - A
Note:
12


o
TJ =+25 C 7.84 8 8.16
Output Voltage VO IO = 5mA to 1A, PO ≤15W V
7.7 8 8.3
VI = 10.6V to 23V
VI= 10.6V to 25V
- 6 80
IO = 500mA
Regline mV
VI= 10.4V to 23V - 6 80
TJ =+25 oC
VI= 11V to 17V - 2 40
o
TJ =+25 C
- 12 100
Regload mV
IO = 5mA to 1A - 12 100
IO = 250mA to 750mA - 5 50
o
Quiescent Current IQ TJ =+25 C - 5.0 6 mA
IO = 5mA to 1A - - 0.5
o
VI= 10.6V to 23V, TJ =+25 C - - 0.8
Output Voltage Drift ∆V/∆T IO = 5mA - -0.8 - mV/ oC
f = 10Hz to 100KHz
TA =+25 oC
f = 120Hz, IO = 500mA
VI = 11.5V to 21.5V
o
Peak Current IPK TJ=+25 C - 2.2 - A
Note:
13


TJ =+25°C 8.82 9.0 9.18
Output Voltage VO IO = 5mA to 1A, PO≤15W V
8.65 9.0 9.35
VI = 11.2V to 24V
VI= 11.7V to 25V
- 6 90
IO = 500mA
Line Regulation (Note1) VI= 12.5V to 19V - 4 45
Regline mV
VI= 11.5V to 24V - 6 90
TJ =+25°C
VI= 12.5V to 19V - 2 45
TJ =+25°C
- 12 100
Regload mV
IO = 5mA to 1.0A - 12 100
IO = 250mA to 750mA - 5 50
Quiescent Current IQ TJ =+25 °C - 5.0 6.0 mA
VI = 11.7V to 25V, TJ=+25 °C - - 0.8
IO = 5mA to 1.0A - - 0.5
Output Voltage Drift ∆V/∆T IO = 5mA - -1.0 - mV/ °C
f = 10Hz to 100KHz
TA =+25 °C
f = 120Hz, IO = 500mA
VI = 12V to 22V
Dropout Voltage VDrop IO = 1A, TJ =+25 °C - 2.0 - V
Short Circuit Current ISC VI= 35V, TA =+25 °C - 250 - mA
Peak Current IPK TJ=+25°C - 2.2 - A
Note:
1. Load and line regulation are specified at constant, junction temperature. Change in VO due to heating effects must be taken
14


TJ =+25°C 9.8 10 10.2
9.6 10 10.4
VI =12.8V to 25V
VI= 12.8V to 26V
- 8 100
IO = 500mA
Regline mV
VI= 12.5V to 25V - 8 100
TJ =+25 °C
VI= 13V to 20V - 3 50
TJ =+25 °C
- 12 100
Regload mV
IO = 5mA to 1.0A - 12 100
IO = 250mA to 750mA - 5 50
VI = 13V to 26V, TJ=+25 °C - - 0.5
Quiescent Current Change ∆IQ VI = 12.8V to 25V, IO = 500mA - - 0.8 mA
IO = 5mA to 1.0A - - 0.5
f = 10Hz to 100KHz µV/Vo
Output Noise Voltage VN - 10 -
TA =+25 °C
f = 120Hz, IO = 500mA
VI = 14V to 24V
Dropout Voltage VDrop IO = 1A, TJ =+25°C - 2.0 - V
Peak Current IPK TJ=+25 °C - 2.2 - A
Note:
15


TJ =+25 °C 11.75 12 12.25
11.5 12 12.5
VI = 14.8V to 27V
VI= 14.8V to 30V
- 10 120
IO = 500mA
Regline mV
VI= 14.5V to 27V - 10 120
TJ =+25 °C
VI= 16V to 22V - 3 60
TJ =+25 °C
- 12 100
Regload mV
IO = 5mA to 1.0A - 12 100
IO = 250mA to 750mA - 5 50
Quiescent Current IQ TJ =+25°C - 5.1 6.0 mA
VI = 15V to 30V, TJ=+25 °C - 0.8
Quiescent Current Change ∆IQ VI = 14V to 27V, IO = 500mA - 0.8 mA
IO = 5mA to 1.0A - 0.5
Output Voltage Drift ∆V/∆T IO = 5mA - -1.0 - mV/°C
f = 10Hz to 100KHz
TA =+25°C
f = 120Hz, IO = 500mA
VI = 14V to 24V
Note:
16

(Refer to the test circuits. 0°C < TJ < 125°C, Io =1A, V I =23V, C I=0.33µF, C O=0.1µF, unless otherwise specified)

TJ =+25 °C 14.7 15 15.3
14.4 15 15.6
VI = 17.7V to 30V
VI= 17.9V to 30V
- 10 150
IO = 500mA
Regline mV
VI= 17.5V to 30V - 11 150
TJ =+25°C
VI= 20V to 26V - 3 75
TJ =+25 °C
- 12 100
Regload mV
IO = 5mA to 1.0A - 12 100
IO = 250mA to 750mA - 5 50
VI = 17.5V to 30V, TJ =+25 °C - - 0.8
IO = 5mA to 1.0A - - 0.5
Output Voltage Drift ∆V/∆T IO = 5mA - -1.0 - mV/°C
f = 10Hz to 100KHz
TA =+25 °C
f = 120Hz, IO = 500mA
VI = 18.5V to 28.5V
Peak Current IPK TJ=+25°C - 2.2 - A
Note:
17


TJ =+25 °C 17.64 18 18.36
17.3 18 18.7
VI = 21V to 33V
VI= 21V to 33V
- 15 180
IO = 500mA
Regline mV
VI= 20.6V to 33V - 15 180
TJ =+25 °C
VI= 24V to 30V - 5 90
TJ =+25°C
- 15 100
Regload mV
IO = 5mA to 1.0A - 15 100
IO = 250mA to 750mA - 7 50
VI = 21V to 33V, TJ=+25 °C - - 0.8
IO = 5mA to 1.0A - - 0.5
f = 10Hz to 100KHz µV/Vo
Output Noise Voltage VN - 10 -
TA =+25°C
f = 120Hz, IO = 500mA
VI = 22V to 32V
Short Circuit Current ISC VI= 35V, TA =+25°C - 250 - mA
Note:
18


TJ =+25 °C 23.5 24 24.5
23 24 25
VI = 27.3V to 38V
VI= 27V to 38V
- 18 240
IO = 500mA
Regline mV
VI= 26.7V to 38V - 18 240
TJ =+25 °C
VI= 30V to 36V - 6 120
TJ =+25 °C
- 15 100
Regload mV
IO = 5mA to 1.0A - 15 100
IO = 250mA to 750mA - 7 50
VI = 27.3V to 38V, TJ =+25 °C - - 0.8
IO = 5mA to 1.0A - - 0.5
f = 10Hz to 100KHz
TA = 25 °C
f = 120Hz, IO = 500mA
VI = 28V to 38V
Note:
19
Typical Perfomance Characteristics
Figure 1. Quiescent Current Figure 2. Peak Output Current
Figure 3. Output Voltage Figure 4. Quiescent Current
20
Typical Applications
MC78XX/LM78XX
Input Output
Figure 5. DC Parameters
MC78XX/LM78XX
Input Output
Figure 6. Load Regulation
MC78XX/LM78XX
Input Output
Figure 7. Ripple Rejection
Input Output
MC78XX/LM78XX
Figure 8. Fixed Output Regulator
21
Input MC78XX/LM78XX Output
CI
Co
Figure 9. Constant Current Regulator
Notes:
(1) To specify an output voltage. substitute voltage value for "XX." A common ground is required between the input and the
Output voltage. The input voltage must remain typically 2.0V above the output voltage even during the low point on the input
ripple voltage.
(2) CI is required if regulator is located an appreciable distance from power Supply filter.
(3) CO improves stability and transient response.
Input Output
MC78XX/LM78XX
CI
Co
I RI ≥ 5IQ
VO = VXX(1+R2/R1)+IQR2
Figure 10. Circuit for Increasing Output Voltage
Input MC7805 Output

LM7805
CI LM741
Co
IRI ≥5 IQ
VO = VXX(1+R2/R1)+IQR2
Figure 11. Adjustable Output Regulator (7 to 30V)
22
Input
Output
MC78XX/LM78XX
Figure 12. High Current Voltage Regulator
Input
MC78XX/LM78XX
Output
Figure 13. High Output Current with Short Circuit Protection
MC78XX/LM78XX
LM741
Figure 14. Tracking Voltage Regulator
23
MC7815
MC7915
Figure 15. Split Power Supply ( ±15V-1A)
Output
Input
MC78XX/LM78XX
Figure 16. Negative Output Voltage Circuit
Input Output
MC78XX/LM78XX
Figure 17. Switching Regulator
24
Mechanical Dimensions
Package
TO-220
9.90 ±0.20 4.50 ±0.20
1.30 ±0.10
(8.70)
2.80 ±0.10
(1.70)
+0.10
ø3.60 ±0.10 1.30 –0.05
18.95MAX.
(3.70)
15.90 ±0.20
9.20 ±0.20
(1.46)
(3.00)
(45°
)
(1.00)
13.08 ±0.20
10.08 ±0.30
1.27 ±0.10 1.52 ±0.10
0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
10.00 ±0.20
25
Mechancal Dimensions (Continued)

Package
D-PAK
6.60 ±0.20
0.70 ±0.20
5.34 ±0.30 2.30 ±0.10
(0.50) (4.34) (0.50) 0.50 ±0.10
0.60 ±0.20
6.10 ±0.20
0.91 ±0.10
9.50 ±0.30
2.70 ±0.20
MIN0.55
0.80 ±0.20
0.89 ±0.10
MAX0.96 0.76 ±0.10 0.50 ±0.10
2.30TYP 2.30TYP 1.02 ±0.20

[2.30±0.20] [2.30±0.20] 2.30 ±0.20
6.60 ±0.20
(5.34)
(0.70)
(0.90)
(1.00)
(5.04)
(1.50)
(3.05)
6.10 ±0.20
(2XR0.25)
9.50 ±0.30
2.70 ±0.20
(0.10)
0.76 ±0.10
26
Ordering Information
Product Number Output Voltage Tolerance Package Operating Temperature
LM7805CT ±4% TO-220 0 ~ + 125°C
Product Number Output Voltage Tolerance Package Operating Temperature

MC7805CT
MC7806CT
MC7808CT
MC7809CT
MC7810CT TO-220
MC7812CT
MC7815CT
MC7818CT
MC7824CT
±4%
MC7805CDT
MC7806CDT
MC7808CDT
MC7809CDT
MC7810CDT D-PAK 0 ~ + 125°C
MC7812CDT
MC7815CDT
MC7818CDT
MC7824CDT
MC7805ACT
MC7806ACT
MC7808ACT
MC7809ACT
MC7810ACT ±2% TO-220
MC7812ACT
MC7815ACT
MC7818ACT
MC7824ACT
27
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support
perform when properly used in accordance with device or system, or to affect its safety or effectiveness.
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
www.fairchildsemi.com
6/1/01 0.0m 001

Stock#DSxxxxxxxx
 2001 Fairchild Semiconductor Corporation
Precision Centigrade Temperature Sensors
LM35/LM35A/LM35C/LM35CA/LM35D
December 1994
General Description
The LM35 series are precision integrated-circuit tempera- available packaged in hermetic TO-46 transistor packages,
ture sensors, whose output voltage is linearly proportional to while the LM35C, LM35CA, and LM35D are also available in
the Celsius (Centigrade) temperature. The LM35 thus has the plastic TO-92 transistor package. The LM35D is also
an advantage over linear temperature sensors calibrated in § available in an 8-lead surface mount small outline package
Kelvin, as the user is not required to subtract a large con- and a plastic TO-202 package.
stant voltage from its output to obtain convenient Centi-
grade scaling. The LM35 does not require any external cali- Features
bration or trimming to provide typical accuracies of g (/4§ C Y Calibrated directly in § Celsius (Centigrade)
at room temperature and g */4§ C over a full b55 to a 150§ C Y Linear a 10.0 mV/§ C scale factor
temperature range. Low cost is assured by trimming and Y 0.5§ C accuracy guaranteeable (at a 25§ C)
calibration at the wafer level. The LM35’s low output imped-
ance, linear output, and precise inherent calibration make
Y Rated for full b55§ to a 150§ C range
interfacing to readout or control circuitry especially easy. It Y Suitable for remote applications
can be used with single power supplies, or with plus and Y Low cost due to wafer-level trimming
minus supplies. As it draws only 60 mA from its supply, it has Y Operates from 4 to 30 volts
very low self-heating, less than 0.1§ C in still air. The LM35 is Y Less than 60 mA current drain
rated to operate over a b55§ to a 150§ C temperature Y Low self-heating, 0.08§ C in still air
range, while the LM35C is rated for a b40§ to a 110§ C Y Nonlinearity only g (/4§ C typical
range (b10§ with improved accuracy). The LM35 series is Y Low impedance output, 0.1 X for 1 mA load
Connection Diagrams
TO-46 TO-92 SO-8
Metal Can Package* Plastic Package Small Outline Molded Package
TL/H/5516 – 2
TL/H/5516–1 TL/H/5516 – 21
*Case is connected to negative pin (GND) Order Number LM35CZ, Top View
LM35CAZ or LM35DZ N.C. e No Connection
Order Number LM35H, LM35AH, See NS Package Number Z03A
LM35CH, LM35CAH or LM35DH Order Number LM35DM
See NS Package Number H03H See NS Package Number M08A
TO-202
Plastic Package
TL/H/5516 – 3
TL/H/5516 – 4
FIGURE 1. Basic Centigrade
Temperature Choose R1 e b VS/50 mA
Sensor ( a 2§ C to a 150§ C)
VOUT e a 1,500 mV at a 150§ C
e a 250 mV at a 25§ C
eb 550 mV at b 55§ C
TL/H/5516–24
FIGURE 2. Full-Range Centigrade
Order Number LM35DP Temperature Sensor
See NS Package Number P03A
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
C1995 National Semiconductor Corporation TL/H/5516 RRD-B30M75/Printed in U. S. A.

Absolute Maximum Ratings (Note 10)
If Military/Aerospace specified devices are required, SO Package (Note 12):
please contact the National Semiconductor Sales Vapor Phase (60 seconds) 215§ C
Office/Distributors for availability and specifications.
Infrared (15 seconds) 220§ C
Supply Voltage a 35V to b 0.2V
ESD Susceptibility (Note 11) 2500V
Output Voltage a 6V to b 1.0V
Specified Operating Temperature Range: TMIN to TMAX
Output Current 10 mA
(Note 2)
Storage Temp., TO-46 Package, b 60§ C to a 180§ C
LM35, LM35A b 55§ C to a 150§ C
TO-92 Package, b 60§ C to a 150§ C
LM35C, LM35CA b 40§ C to a 110§ C
SO-8 Package, b 65§ C to a 150§ C
LM35D 0§ C to a 100§ C
TO-202 Package, b 65§ C to a 150§ C
Lead Temp.:
TO-46 Package, (Soldering, 10 seconds) 300§ C
TO-92 Package, (Soldering, 10 seconds) 260§ C
TO-202 Package, (Soldering, 10 seconds) a 230§ C
Electrical Characteristics (Note 1) (Note 6)

LM35A LM35CA
Tested Design Tested Design Units
Parameter Conditions
Typical Limit Limit Typical Limit Limit (Max.)
(Note 4) (Note 5) (Note 4) (Note 5)
Accuracy TA e a 25§ C g 0.2 g 0.5 g 0.2 g 0.5 §C
(Note 7) TA eb10§ C g 0.3 g 0.3 g 1.0 §C
TA e TMAX g 0.4 g 1.0 g 0.4 g 1.0 §C
TA e TMIN g 0.4 g 1.0 g 0.4 g 1.5 §C
Nonlinearity TMINsTAsTMAX g 0.18 g 0.35 g 0.15 g 0.3 §C
(Note 8)
Sensor Gain TMINsTAsTMAX a 10.0 a 9.9, a 10.0 a 9.9, mV/§ C
(Average Slope) a 10.1 a 10.1
Load Regulation TA e a 25§ C g 0.4 g 1.0 g 0.4 g 1.0 mV/mA

(Note 3) 0sILs1 mA TMINsTAsTMAX g 0.5 g 3.0 g 0.5 g 3.0 mV/mA
Line Regulation TA e a 25§ C g 0.01 g 0.05 g 0.01 g 0.05 mV/V
(Note 3) 4VsVSs30V g 0.02 g 0.1 g 0.02 g 0.1 mV/V
Quiescent Current VS e a 5V, a 25§ C 56 67 56 67 mA
(Note 9) VS e a 5V 105 131 91 114 mA
VS e a 30V, a 25§ C 56.2 68 56.2 68 mA
VS e a 30V 105.5 133 91.5 116 mA
Change of 4VsVSs30V, a 25§ C 0.2 1.0 0.2 1.0 mA
Quiescent Current 4VsVSs30V 0.5 2.0 0.5 2.0 mA
(Note 3)
Temperature a 0.39 a 0.5 a 0.39 a 0.5 mA/§ C
Coefficient of
Quiescent Current
Minimum Temperature In circuit of a 1.5 a 2.0 a 1.5 a 2.0 §C
for Rated Accuracy Figure 1 , IL e 0
Long Term Stability TJ e TMAX, for g 0.08 g 0.08 §C
1000 hours
Note 1: Unless otherwise noted, these specifications apply: b 55§ C s TJ s a 150§ C for the LM35 and LM35A; b 40§ s TJ s a 110§ C for the LM35C and LM35CA; and
0§ s TJ s a 100§ C for the LM35D. VS e a 5Vdc and ILOAD e 50 mA, in the circuit of Figure 2. These specifications also apply from a 2§ C to TMAX in the circuit of
Figure 1 . Specifications in boldface apply over the full rated temperature range.
Note 2: Thermal resistance of the TO-46 package is 400§ C/W, junction to ambient, and 24§ C/W junction to case. Thermal resistance of the TO-92 package is
180§ C/W junction to ambient. Thermal resistance of the small outline molded package is 220§ C/W junction to ambient. Thermal resistance of the TO-202 package
is 85§ C/W junction to ambient. For additional thermal resistance information see table in the Applications section.
2
Electrical Characteristics (Note 1) (Note 6) (Continued)
LM35 LM35C, LM35D

Tested Design Tested Design Units
Parameter Conditions
Typical Limit Limit Typical Limit Limit (Max.)
(Note 4) (Note 5) (Note 4) (Note 5)
Accuracy, TA e a 25§ C g 0.4 g 1.0 g 0.4 g 1.0 §C
LM35, LM35C TA eb10§ C g 0.5 g 0.5 g 1.5 §C
(Note 7) TA e TMAX g 0.8 g 1.5 g 0.8 g 1.5 §C
TA e TMIN g 0.8 g 1.5 g 0.8 g 2.0 §C
Accuracy, TA e a 25§ C g 0.6 g 1.5 §C
LM35D TA e TMAX g 0.9 g 2.0 §C
(Note 7) TA e TMIN g 0.9 g 2.0 §C
Nonlinearity TMINsTAsTMAX g 0.3 g 0.5 g 0.2 g 0.5 §C
(Note 8)
Sensor Gain TMINsTAsTMAX a 10.0 a 9.8, a 10.0 a 9.8, mV/§ C
(Average Slope) a 10.2 a 10.2
Load Regulation TA e a 25§ C g 0.4 g 2.0 g 0.4 g 2.0 mV/mA

(Note 3) 0sILs1 mA TMINsTAsTMAX g 0.5 g 5.0 g 0.5 g 5.0 mV/mA
Line Regulation TA e a 25§ C g 0.01 g 0.1 g 0.01 g 0.1 mV/V
(Note 3) 4VsVSs30V g 0.02 g 0.2 g 0.02 g 0.2 mV/V
Quiescent Current VS e a 5V, a 25§ C 56 80 56 80 mA
(Note 9) VS e a 5V 105 158 91 138 mA
VS e a 30V, a 25§ C 56.2 82 56.2 82 mA
VS e a 30V 105.5 161 91.5 141 mA
Change of 4VsVSs30V, a 25§ C 0.2 2.0 0.2 2.0 mA
Quiescent Current 4VsVSs30V 0.5 3.0 0.5 3.0 mA
(Note 3)
Temperature a 0.39 a 0.7 a 0.39 a 0.7 mA/§ C
Coefficient of
Quiescent Current
Minimum Temperature In circuit of a 1.5 a 2.0 a 1.5 a 2.0 §C
for Rated Accuracy Figure 1 , IL e 0
Long Term Stability TJ e TMAX, for g 0.08 g 0.08 §C
1000 hours
Note 3: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be
computed by multiplying the internal dissipation by the thermal resistance.
Note 4: Tested Limits are guaranteed and 100% tested in production.
Note 5: Design Limits are guaranteed (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to
calculate outgoing quality levels.
Note 6: Specifications in boldface apply over the full rated temperature range.
Note 7: Accuracy is defined as the error between the output voltage and 10mv/§ C times the device’s case temperature, at specified conditions of voltage, current,
and temperature (expressed in § C).
Note 8: Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the device’s rated temperature
range.
Note 9: Quiescent current is defined in the circuit of Figure 1 .
Note 10: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when
operating the device beyond its rated operating conditions. See Note 1.
Note 11: Human body model, 100 pF discharged through a 1.5 kX resistor.
Note 12: See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ or the section titled ‘‘Surface Mount’’ found in a current National
Semiconductor Linear Data Book for other methods of soldering surface mount devices.
3
Typical Performance Characteristics
Thermal Resistance Thermal Response
Junction to Air Thermal Time Constant in Still Air
Quiescent Current
Thermal Response in Minimum Supply vs. Temperature
Stirred Oil Bath Voltage vs. Temperature (In Circuit of Figure 1 .)
TL/H/5516 – 17
Quiescent Current
vs. Temperature Accuracy vs. Temperature Accuracy vs. Temperature
(In Circuit of Figure 2 .) (Guaranteed) (Guaranteed)
TL/H/5516 – 18
Noise Voltage Start-Up Response
TL/H/5516 – 22
4
Applications
The LM35 can be applied easily in the same way as other The TO-46 metal package can also be soldered to a metal
integrated-circuit temperature sensors. It can be glued or surface or pipe without damage. Of course, in that case the
cemented to a surface and its temperature will be within Vb terminal of the circuit will be grounded to that metal.
about 0.01§ C of the surface temperature. Alternatively, the LM35 can be mounted inside a sealed-end
This presumes that the ambient air temperature is almost metal tube, and can then be dipped into a bath or screwed
the same as the surface temperature; if the air temperature into a threaded hole in a tank. As with any IC, the LM35 and
were much higher or lower than the surface temperature, accompanying wiring and circuits must be kept insulated
the actual temperature of the LM35 die would be at an inter- and dry, to avoid leakage and corrosion. This is especially
mediate temperature between the surface temperature and true if the circuit may operate at cold temperatures where
the air temperature. This is expecially true for the TO-92 condensation can occur. Printed-circuit coatings and var-
plastic package, where the copper leads are the principal nishes such as Humiseal and epoxy paints or dips are often
thermal path to carry heat into the device, so its tempera- used to insure that moisture cannot corrode the LM35 or its
ture might be closer to the air temperature than to the sur- connections.
face temperature. These devices are sometimes soldered to a small light-
To minimize this problem, be sure that the wiring to the weight heat fin, to decrease the thermal time constant and
LM35, as it leaves the device, is held at the same tempera- speed up the response in slowly-moving air. On the other
ture as the surface of interest. The easiest way to do this is hand, a small thermal mass may be added to the sensor, to
to cover up these wires with a bead of epoxy which will give the steadiest reading despite small deviations in the air
insure that the leads and wires are all at the same tempera- temperature.
ture as the surface, and that the LM35 die’s temperature will
not be affected by the air temperature.
Temperature Rise of LM35 Due To Self-heating (Thermal Resistance)
TO-46, TO-46, TO-92, TO-92, SO-8 SO-8 TO-202 TO-202 ***
no heat sink small heat fin* no heat sink small heat fin** no heat sink small heat fin** no heat sink small heat fin
Still air 400§ C/W 100§ C/W 180§ C/W 140§ C/W 220§ C/W 110§ C/W 85§ C/W 60§ C/W
Moving air 100§ C/W 40§ C/W 90§ C/W 70§ C/W 105§ C/W 90§ C/W 25§ C/W 40§ C/W
Still oil 100§ C/W 40§ C/W 90§ C/W 70§ C/W
Stirred oil 50§ C/W 30§ C/W 45§ C/W 40§ C/W
(Clamped to metal,
Infinite heat sink) (24§ C/W) (55§ C/W) (23§ C/W)
* Wakefield type 201, or 1× disc of 0.020× sheet brass, soldered to case, or similar.
** TO-92 and SO-8 packages glued and leads soldered to 1× square of (/16× printed circuit board with 2 oz. foil or similar.
Typical Applications (Continued)
TL/H/5516 – 19
FIGURE 3. LM35 with Decoupling from Capacitive Load
TL/H/5516 – 20
FIGURE 4. LM35 with R-C Damper
CAPACITIVE LOADS capacitance because the capacitance forms a bypass from

Like most micropower circuits, the LM35 has a limited ability ground to input, not on the output. However, as with any
to drive heavy capacitive loads. The LM35 by itself is able to linear circuit connected to wires in a hostile environment, its
drive 50 pf without special precautions. If heavier loads are performance can be affected adversely by intense electro-
anticipated, it is easy to isolate or decouple the load with a magnetic sources such as relays, radio transmitters, motors
resistor; see Figure 3 . Or you can improve the tolerance of with arcing brushes, SCR transients, etc, as its wiring can
capacitance with a series R-C damper from output to act as a receiving antenna and its internal junctions can act
ground; see Figure 4 . as rectifiers. For best results in such cases, a bypass capac-
itor from VIN to ground and a series R-C damper such as
When the LM35 is applied with a 200X load resistor as
75X in series with 0.2 or 1 mF from output to ground are
shown in Figure 5, 6, or 8, it is relatively immune to wiring
often useful. These are shown in Figures 13, 14, and 16.
5
TL/H/5516 – 6
FIGURE 6. Two-Wire Remote Temperature Sensor
(Output Referred to Ground)
TL/H/5516–5
(Grounded Sensor)
TL/H/5516–7
FIGURE 7. Temperature Sensor, Single Supply, b55§ to
a 150§ C
TL/H/5516 – 8
(Output Referred to Ground)
TL/H/5516–9
FIGURE 9. 4-To-20 mA Current Source (0§ C to a 100§ C)
TL/H/5516 – 10
FIGURE 10. Fahrenheit Thermometer
6
TL/H/5516– 11
FIGURE 11. Centigrade Thermometer (Analog Meter)
TL/H/5516 – 12
FIGURE 12. Expanded Scale Thermometer
(50§ to 80§ Fahrenheit, for Example Shown)
TL/H/5516 – 13
FIGURE 13. Temperature To Digital Converter (Serial Output) ( a 128§ C Full Scale)
TL/H/5516 – 14
FIGURE 14. Temperature To Digital Converter (Parallel TRI-STATEÉ Outputs for
Standard Data Bus to mP Interface) (128§ C Full Scale)
7
TL/H/5516 – 16
* e 1% or 2% film resistor
-Trim RB for VB e 3.075V
-Trim RC for VC e 1.955V
-Trim RA for VA e 0.075V a 100mV/§ C c Tambient
-Example, VA e 2.275V at 22§ C
FIGURE 15. Bar-Graph Temperature Display (Dot Mode)
TL/H/5516 – 15
FIGURE 16. LM35 With Voltage-To-Frequency Converter And Isolated Output
(2§ C to a 150§ C; 20 Hz to 1500 Hz)
8
Block Diagram
TL/H/5516 – 23
9
Physical Dimensions inches (millimeters)
TO-46 Metal Can Package (H)

Order Number LM35H, LM35AH, LM35CH,
LM35CAH, or LM35DH
NS Package Number H03H
SO-8 Molded Small Outline Package (M)

Order Number LM35DM
NS Package Number M08A
10
Physical Dimensions inches (millimeters) (Continued)
Power Package TO-202 (P)

Order Number LM35DP
NS Package Number P03A
11
Physical Dimensions inches (millimeters) (Continued)
TO-92 Plastic Package (Z)

Order Number LM35CZ, LM35CAZ or LM35DZ
NS Package Number Z03A
LIFE SUPPORT POLICY
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semiconductores National Semiconductor
Corporation GmbH Japan Ltd. Hong Kong Ltd. Do Brazil Ltda. (Australia) Pty, Ltd.
2900 Semiconductor Drive Livry-Gargan-Str. 10 Sumitomo Chemical 13th Floor, Straight Block, Rue Deputado Lacorda Franco Building 16
P.O. Box 58090 D-82256 F4urstenfeldbruck Engineering Center Ocean Centre, 5 Canton Rd. 120-3A Business Park Drive
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Tel: (043) 299-2300 Fax: (55-11) 212-1181 Fax: (3) 558-9998
Fax: (043) 299-2500
TDA2030
14W Hi-Fi AUDIO AMPLIFIER
DESCRIPTION
The TDA2030 is a monolithic integrated circuit in
Pentawatt package, intended for use as a low
frequency class AB amplifier. Typically it provides
14W output power (d = 0.5%) at 14V/4Ω; at ± 14V
the guaranteed output power is 12W on a 4Ω load
and 8W on a 8Ω (DIN45500).
The TDA2030 provides high output current and has
very low harmonic and cross-over distortion.
Further the device incorporates an original (and Pentawatt
patented) short circuit protection system compris-
ing an arrangement for automatically limiting the
dissipated power so as to keep the working point
of the output transistors within their safe operating ORDERING NUMBERS : TDA2030H
area. A conventional thermal shut-down system is TDA2030V
also included.
ABSOLUTE MAXIMUM RATINGS
Vs Supply voltage ± 18 V
Vi Input voltage Vs
Vi Differential input voltage ± 15 V
Io Output peak current (internally limited) 3.5 A
Ptot Power dissipation at Tcase = 90°C 20 W
Tstg, Tj Stoprage and junction temperature -40 to 150 °C
TYPICAL APPLICATION
March 1993 1/11

TDA2030
PIN CONNECTION (top view)
+VS
OUTPUT
-VS
INVERTING INPUT
NON INVERTING INPUT
TEST CIRCUIT
2/11
TDA2030
THERMAL DATA
R th j-case Thermal resistance junction-case max 3 °C/W
ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs = ± 14V, T amb = 25°C unless otherwise
specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Vs Supply voltage ±6 ± 18 V
Id Quiescent drain current 40 60 mA
Ib Input bias current 0.2 2 µA

Vs = ± 18V
Vos Input offset voltage ±2 ± 20 mV
Ios Input offset current ± 20 ± 200 nA
Po Output power d = 0.5% Gv = 30 dB

f = 40 to 15,000 Hz
RL = 4Ω 12 14 W
RL = 8Ω 8 9 W
d = 10% Gv = 30 dB
f = 1 KHz
RL = 4Ω 18 W
RL = 8Ω 11 W
d Distortion Po = 0.1 to 12W

RL = 4Ω Gv = 30 dB
f = 40 to 15,000 Hz 0.2 0.5 %
Po = 0.1 to 8W
RL = 8Ω Gv = 30 dB
f = 40 to 15,000 Hz 0.1 0.5 %
B Power Bandwidth Gv = 30 dB
10 to 140,000 Hz
(-3 dB) Po = 12W R L = 4Ω
Ri Input resistance (pin 1) 0.5 5 MΩ
Gv Voltage gain (open loop) 90 dB
Gv Voltage gain (closed loop) f = 1 kHz 29.5 30 30.5 dB
eN Input noise voltage B = 22 Hz to 22 KHz 3 10 µV
iN Input noise current 80 200 pA
SVR Supply voltage rejection RL = 4Ω Gv = 30 dB 40 50 dB

Rg = 22 kΩ
Vripple = 0.5 Veff
fripple = 100 Hz
Id Drain current Po = 14W R L = 4Ω 900 mA

Po = W R L = 8Ω 500 mA
Tj Thermal shut-down junction 145 °C

temperature
3/11
TDA2030
Figure 1. Output power vs. Figure 2. Output power vs. F ig u re 3 . Di stor ti on v s.

supply voltage supply voltage output power
Fi gur e 4. Di stortion v s. F ig ure 5. Di stortion vs. F ig u re 6 . Di stor ti on v s.

output power output power frequency
F igu r e 7. Di stor ti on vs . Fig ure 8. Fre que nc y re - Figure 9. Quiescent current

frequency sponse with different values vs. supply voltage
of the rolloff capacitor C8
(see fig. 13)
4/11
TDA2030
Figure 10. Supply voltage Figure 11. Power dissipa- Figure 12. Maximum power
rejection vs. voltage gain tion and efficiency vs. output dissipation vs. supply volt-
power age (sine wave operation)
APPLICATION INFORMATION
Figure 13. Typical amplifier Figure 14. P.C. board and component layout for
with split power supply the circuit of fig. 13 (1 : 1 scale)
5/11
TDA2030
APPLICATION INFORMATION (continued)
Figure 15. Typical amplifier Figure 16. P.C. board and component layout for
with single power supply the circuit of fig. 15 (1 : 1 scale)
Figure 17. Bridge amplifier configuration with split power supply (Po = 28W, Vs = ±14V)
6/11
TDA2030
PRACTICAL CONSIDERATIONS
Printed circuit board packageand the heatsinkwith singlesupply voltage

The layout shown in Fig. 16 should be adopted by configuration.
the designers. If different layouts are used, the
ground points of input 1 and input 2 must be well Application suggestions
decoupled from the ground return of the output in The recommended values of the components are
which a high current flows. those shown on application circuit of fig. 13.
Different values can be used. The following table
Assembly suggestion can help the designer.
No electrical isolation is needed between the
Recomm. Larger than Smaller than

Component Purpose
value recommended value recommended value
R1 22 kΩ Closed loop gain Increase of gain Decrease of gain (*)

setting
R2 680 Ω Closed loop gain Decrease of gain (*) Increase of gain

setting
R3 22 kΩ Non inverting input Increase of input Decrease of input

biasing impedance impedance
R4 1Ω Frequency stability Danger of osccilat. at

high frequencies
with induct. loads
R5 ≅ 3 R2 Upper frequency Poor high frequencies Danger of

cutoff attenuation oscillation
C1 1 µF Input DC Increase of low

decoupling frequencies cutoff
C2 22 µF Inverting DC Increase of low

decoupling frequencies cutoff
C3, C4 0.1 µF Supply voltage Danger of

bypass oscillation
C5, C6 100 µF Supply voltage Danger of

bypass oscillation
C7 0.22 µF Frequency stability Danger of oscillation
C8 1 Upper frequency Smaller bandwidth Larger bandwidth

≅
2π B R1 cutoff
D1, D2 1N4001 To protect the device against output voltage spikes
(*) Closed loop gain must be higher than 24dB
7/11
TDA2030
SHORT CIRCUIT PROTECTION
The TDA2030 has an original circuit which limits the peak power limiting rather than simple current lim-
current of the output transistors. Fig. 18 shows that iting.
the maximum output current is a function of the It reduces the possibility that the device gets dam-
collector emitter voltage; hence the output transis- aged during an accidental short circuit from AC
tors work within their safe operating area (Fig. 2). output to ground.
This function can therefore be considered as being
F i gu r e 1 8. Ma ximum Figure 19. Safe operating area and

o u tpu t c urr en t v s . collector characteristics of the
voltage [VCEsat ] across protected power transistor
each output transistor
THERMAL SHUT-DOWN
The presence of a thermal limiting circuit offers the junction temperature increases up to 150°C, the
following advantages: thermal shut-down simply reduces the power
1. An overload on the output (even if it is perma- dissipation at the current consumption.
nent), or an abovelimit ambient temperaturecan The maximum allowable power dissipation de-
be easily supported since the Tj cannot be pends upon the size of the external heatsink (i.e. its
higher than 150°C. thermal resistance); fig. 22 shows this dissipable
2. The heatsink can have a smaller factor of safety power as a function of ambient temperature for
compared with that of a conventional circuit. different thermal resistance.
There is no possibility of device damage due to
high junction temperature.If for any reason, the
8/11
TDA2030
Figure 20. Output power and Figure 21. Output power and F i gu r e 2 2. Ma ximum
d ra i n cu r ren t vs. c ase d r a i n c u rr en t vs. c as e allowable power dissipation
temperature (RL = 4Ω) temperature (RL = 8Ω) vs. ambient temperature
Figure 23. Example of heat-sink Dimension : suggestion.

The following table shows the length that
the heatsink in fig.23 must have for several
values of Ptot and Rth.
Ptot (W) 12 8 6
Length of heatsink
60 40 30
(mm)
Rth of heatsink
4.2 6.2 8.3
(° C/W)
9/11
TDA2030
PENTAWATT PACKAGE MECHANICAL DATA

mm inch
DIM.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.4 0.126 0.134 0.142
G1 6.8 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 17.85 0.703
L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 4.5 0.177
M1 4 0.157
Dia 3.65 3.85 0.144 0.152
L
E
L1
M1
A
M
D
C
D1
L2
L5 L3
G1
H3
Dia.
F
F1
L7
H2
L6
10/11
TDA2030
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain
- Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
11/11
LM3914 Dot/Bar Display Driver
January 2000
LM3914
Dot/Bar Display Driver
General Description Much of the display flexibility derives from the fact that all
outputs are individual, DC regulated currents. Various effects
The LM3914 is a monolithic integrated circuit that senses can be achieved by modulating these currents. The indi-
analog voltage levels and drives 10 LEDs, providing a linear vidual outputs can drive a transistor as well as a LED at the
analog display. A single pin changes the display from a mov- same time, so controller functions including “staging” control
ing dot to a bar graph. Current drive to the LEDs is regulated can be performed. The LM3914 can also act as a program-
and programmable, eliminating the need for resistors. This mer, or sequencer.
feature is one that allows operation of the whole system from
The LM3914 is rated for operation from 0˚C to +70˚C. The
less than 3V.
LM3914N-1 is available in an 18-lead molded (N) package.
The circuit contains its own adjustable reference and accu-
The following typical application illustrates adjusting of the
rate 10-step voltage divider. The low-bias-current input
reference to a desired value, and proper grounding for accu-
buffer accepts signals down to ground, or V−, yet needs no
rate operation, and avoiding oscillations.
protection against inputs of 35V above or below ground. The
buffer drives 10 individual comparators referenced to the
precision divider. Indication non-linearity can thus be held Features
typically to 1⁄2%, even over a wide temperature range. n Drives LEDs, LCDs or vacuum fluorescents
Versatility was designed into the LM3914 so that controller, n Bar or dot display mode externally selectable by user
visual alarm, and expanded scale functions are easily added n Expandable to displays of 100 steps
on to the display system. The circuit can drive LEDs of many n Internal voltage reference from 1.2V to 12V
colors, or low-current incandescent lamps. Many LM3914s n Operates with single supply of less than 3V
can be “chained” to form displays of 20 to over 100 seg-
n Inputs operate down to ground
ments. Both ends of the voltage divider are externally avail-
n Output current programmable from 2 mA to 30 mA
able so that 2 drivers can be made into a zero-center meter.
n No multiplex switching or interaction between outputs
The LM3914 is very easy to apply as an analog meter circuit.
n Input withstands ± 35V without damage or false outputs
A 1.2V full-scale meter requires only 1 resistor and a single
3V to 15V supply in addition to the 10 display LEDs. If the 1 n LED driver outputs are current regulated,
resistor is a pot, it becomes the LED brightness control. The open-collectors
simplified block diagram illustrates this extremely simple ex- n Outputs can interface with TTL or CMOS logic
ternal circuitry. n The internal 10-step divider is floating and can be
When in the dot mode, there is a small amount of overlap or referenced to a wide range of voltages
“fade” (about 1 mV) between segments. This assures that at
no time will all LEDs be “OFF”, and thus any ambiguous dis-
play is avoided. Various novel displays are possible.
© 2000 National Semiconductor Corporation DS007970 www.national.com

LM3914
0V to 5V Bar Graph Meter
DS007970-1
Note: Grounding method is typical of all uses. The 2.2 µF tantalum or 10 µF aluminum electrolytic capacitor is needed if leads to the LED supply are 6" or
longer.
www.national.com 2
LM3914
Absolute Maximum Ratings (Note 1) Reference Load Current 10 mA
If Military/Aerospace specified devices are required, Storage Temperature Range −55˚C to +150˚C
please contact the National Semiconductor Sales Office/ Soldering Information
Distributors for availability and specifications. Dual-In-Line Package
Soldering (10 seconds) 260˚C
Power Dissipation (Note 6) Plastic Chip Carrier Package
Molded DIP (N) 1365 mW Vapor Phase (60 seconds) 215˚C
Supply Voltage 25V Infrared (15 seconds) 220˚C
Voltage on Output Drivers 25V See AN-450 “Surface Mounting Methods and Their Effect
Input Signal Overvoltage (Note 4) ± 35V on Product Reliability” for other methods of soldering
Divider Voltage −100 mV to V+ surface mount devices.
Electrical Characteristics (Notes 2, 4)

Parameter Conditions (Note 2) Min Typ Max Units
COMPARATOR
Offset Voltage, Buffer and First 0V ≤ VRLO = VRHI ≤ 12V,
3 10 mV
Comparator ILED = 1 mA
Offset Voltage, Buffer and Any Other 0V ≤ VRLO = VRHI ≤ 12V,
3 15 mV
Comparator ILED = 1 mA
Gain (∆ILED/∆VIN) IL(REF) = 2 mA, ILED = 10 mA 3 8 mA/mV
Input Bias Current (at Pin 5) 0V ≤ VIN ≤ V+ − 1.5V 25 100 nA
Input Signal Overvoltage No Change in Display −35 35 V
VOLTAGE-DIVIDER
Divider Resistance Total, Pin 6 to 4 8 12 17 kΩ
Accuracy (Note 3) 0.5 2 %
VOLTAGE REFERENCE
Output Voltage 0.1 mA ≤ IL(REF) ≤ 4 mA,
1.2 1.28 1.34 V
V+ = VLED = 5V
Line Regulation 3V ≤ V+ ≤ 18V 0.01 0.03 %/V
Load Regulation 0.1 mA ≤ IL(REF) ≤ 4 mA,
0.4 2 %
V+ = VLED = 5V
Output Voltage Change with 0˚C ≤ TA ≤ +70˚C, IL(REF) = 1 mA,
1 %
Temperature V+ = 5V
Adjust Pin Current 75 120 µA
OUTPUT DRIVERS
LED Current V+ = VLED = 5V, IL(REF) = 1 mA 7 10 13 mA
LED Current Difference (Between VLED = 5V ILED = 2 mA 0.12 0.4
mA
Largest and Smallest LED Currents) ILED = 20 mA 1.2 3
LED Current Regulation 2V ≤ VLED ≤ 17V ILED = 2 mA 0.1 0.25
mA
ILED = 20 mA 1 3
Dropout Voltage ILED(ON) = 20 mA, VLED = 5V,
1.5 V
∆ILED = 2 mA
Saturation Voltage ILED = 2.0 mA, IL(REF) = 0.4 mA 0.15 0.4 V
Output Leakage, Each Collector (Bar Mode) (Note 5) 0.1 10 µA
Output Leakage (Dot Mode) Pins 10–18 0.1 10 µA
(Note 5) Pin 1 60 150 450 µA
SUPPLY CURRENT
Standby Supply Current V+ = 5V,
2.4 4.2 mA
(All Outputs Off) IL(REF) = 0.2 mA
V+ = 20V,
6.1 9.2 mA
IL(REF) = 1.0 mA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
3 www.national.com
LM3914
Electrical Characteristics (Notes 2, 4) (Continued)
Note 2: Unless otherwise stated, all specifications apply with the following conditions:
3 VDC ≤ V+ ≤ 20 VDC VREF, VRHI, VRLO ≤ (V+ − 1.5V)
3 VDC ≤ VLED ≤ V+ 0V ≤ VIN ≤ V+ − 1.5V
−0.015V ≤ VRLO ≤ 12 VDC TA = +25˚C, IL(REF) = 0.2 mA, VLED = 3.0V, pin 9 connected to pin 3 (Bar Mode).
−0.015V ≤ VRHI ≤ 12 VDC
For higher power dissipations, pulse testing is used.
Note 3: Accuracy is measured referred to +10.000 VDC at pin 6, with 0.000 VDC at pin 4. At lower full-scale voltages, buffer and comparator offset voltage may add
significant error.
Note 4: Pin 5 input current must be limited to ± 3 mA. The addition of a 39k resistor in series with pin 5 allows ± 100V signals without damage.
Note 5: Bar mode results when pin 9 is within 20 mV of V+. Dot mode results when pin 9 is pulled at least 200 mV below V+ or left open circuit. LED No. 10 (pin
10 output current) is disabled if pin 9 is pulled 0.9V or more below VLED.
Note 6: The maximum junction temperature of the LM3914 is 100˚C. Devices must be derated for operation at elevated temperatures. Junction to ambient thermal
resistance is 55˚C/W for the molded DIP (N package).
Definition of Terms LED Current Regulation: The change in output current

over the specified range of LED supply voltage (VLED) as
Accuracy: The difference between the observed threshold measured at the current source outputs. As the forward volt-
voltage and the ideal threshold voltage for each comparator. age of an LED does not change significantly with a small
Specified and tested with 10V across the internal voltage di- change in forward current, this is equivalent to changing the
vider so that resistor ratio matching error predominates over voltage at the LED anodes by the same amount.
comparator offset voltage.
Line Regulation: The average change in reference output
Adjust Pin Current: Current flowing out of the reference ad- voltage over the specified range of supply voltage (V+).
just pin when the reference amplifier is in the linear region.
Load Regulation: The change in reference output voltage
Comparator Gain: The ratio of the change in output current (VREF) over the specified range of load current (IL(REF)).
(ILED) to the change in input voltage (VIN) required to pro-
Offset Voltage: The differential input voltage which must be
duce it for a comparator in the linear region.
applied to each comparator to bias the output in the linear re-
Dropout Voltage: The voltage measured at the current gion. Most significant error when the voltage across the in-
source outputs required to make the output current fall by ternal voltage divider is small. Specified and tested with pin
10%. 6 voltage (VRHI) equal to pin 4 voltage (VRLO).
Input Bias Current: Current flowing out of the signal input
when the input buffer is in the linear region.
Typical Performance Characteristics

Supply Current vs Operating Input Bias Reference Voltage vs
Temperature Current vs Temperature Temperature
DS007970-2 DS007970-20
DS007970-21
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LM3914
Typical Performance Characteristics (Continued)
Reference Adjust Pin LED Current-Regulation LED Driver Saturation

Current vs Temperature Dropout Voltage
DS007970-22
DS007970-23
DS007970-24
Input Current Beyond LED Current vs LED Driver Current

Signal Range (Pin 5) Reference Loading Regulation
DS007970-25
DS007970-26 DS007970-27
Total Divider Resistance Common-Mode Limits Output Characteristics

vs Temperature
DS007970-30
DS007970-29
DS007970-28
5 www.national.com
LM3914
Block Diagram (Showing Simplest Application)
DS007970-3
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LM3914
Functional Description MODE PIN USE
Pin 9, the Mode Select input controls chaining of multiple
The simplifed LM3914 block diagram is to give the general
LM3914s, and controls bar or dot mode operation. The fol-
idea of the circuit’s operation. A high input impedance buffer
lowing tabulation shows the basic ways of using this input.
operates with signals from ground to 12V, and is protected
Other more complex uses will be illustrated in the applica-
against reverse and overvoltage signals. The signal is then
tions.
applied to a series of 10 comparators; each of which is bi-
ased to a different comparison level by the resistor string. Bar Graph Display: Wire Mode Select (pin 9) directly to pin
3 (V+ pin).
In the example illustrated, the resistor string is connected to
the internal 1.25V reference voltage. In this case, for each Dot Display, Single LM3914 Driver: Leave the Mode Select
125 mV that the input signal increases, a comparator will pin open circuit.
switch on another indicating LED. This resistor divider can Dot Display, 20 or More LEDs: Connect pin 9 of the first
be connected between any 2 voltages, providing that they driver in the series (i.e., the one with the lowest input voltage
are 1.5V below V+ and no less than V−. If an expanded scale comparison points) to pin 1 of the next higher LM3914 driver.
meter display is desired, the total divider voltage can be as Continue connecting pin 9 of lower input drivers to pin 1 of
little as 200 mV. Expanded-scale meter displays are more higher input drivers for 30, 40, or more LED displays. The
accurate and the segments light uniformly only if bar mode is last LM3914 driver in the chain will have pin 9 wired to pin 11.
used. At 50 mV or more per step, dot mode is usable. All previous drivers should have a 20k resistor in parallel with
LED No. 9 (pin 11 to VLED).
INTERNAL VOLTAGE REFERENCE
The reference is designed to be adjustable and develops a Mode Pin Functional Description
nominal 1.25V between the REF OUT (pin 7) and REF ADJ
This pin actually performs two functions. Refer to the simpli-
(pin 8) terminals. The reference voltage is impressed across
fied block diagram below.
program resistor R1 and, since the voltage is constant, a
constant current I1 then flows through the output set resistor
Block Diagram of Mode Pin Description
R2 giving an output voltage of:
DS007970-4
Since the 120 µA current (max) from the adjust terminal rep- DS007970-5
resents an error term, the reference was designed to mini- *High for bar
mize changes of this current with V+ and load changes.
DOT OR BAR MODE SELECTION
CURRENT PROGRAMMING The voltage at pin 9 is sensed by comparator C1, nominally
A feature not completely illustrated by the block diagram is referenced to (V+ − 100 mV). The chip is in bar mode when
the LED brightness control. The current drawn out of the ref- pin 9 is above this level; otherwise it’s in dot mode. The com-
erence voltage pin (pin 7) determines LED current. Approxi- parator is designed so that pin 9 can be left open circuit for
mately 10 times this current will be drawn through each dot mode.
lighted LED, and this current will be relatively constant de- Taking into account comparator gain and variation in the
spite supply voltage and temperature changes. Current 100 mV reference level, pin 9 should be no more than 20 mV
drawn by the internal 10-resistor divider, as well as by the ex- below V+ for bar mode and more than 200 mV below V+ (or
ternal current and voltage-setting divider should be included open circuit) for dot mode. In most applications, pin 9 is ei-
in calculating LED drive current. The ability to modulate LED ther open (dot mode) or tied to V+ (bar mode). In bar mode,
brightness with time, or in proportion to input voltage and pin 9 should be connected directly to pin 3. Large currents
other signals can lead to a number of novel displays or ways drawn from the power supply (LED current, for example)
of indicating input overvoltages, alarms, etc. should not share this path so that large IR drops are avoided.
DOT MODE CARRY

In order for the display to make sense when multiple
LM3914s are cascaded in dot mode, special circuitry has
been included to shut off LED No. 10 of the first device when
7 www.national.com
LM3914
Mode Pin Functional Description LEDs OFF) is 1.6 mA (2.5 mA max). However, any reference
loading adds 4 times that current drain to the V+ (pin 3) sup-
(Continued)
ply input. For example, an LM3914 with a 1 mA reference pin
LED No. 1 of the second device comes on. The connection load (1.3k), would supply almost 10 mA to every LED while
for cascading in dot mode has already been described and is drawing only 10 mA from its V+ pin supply. At full-scale, the
depicted below. IC is typically drawing less than 10% of the current supplied
As long as the input signal voltage is below the threshold of to the display.
the second LM3914, LED No. 11 is off. Pin 9 of LM3914 The display driver does not have built-in hysteresis so that
No. 1 thus sees effectively an open circuit so the chip is in the display does not jump instantly from one LED to the next.
dot mode. As soon as the input voltage reaches the thresh- Under rapidly changing signal conditions, this cuts down
old of LED No. 11, pin 9 of LM3914 No. 1 is pulled an LED high frequency noise and often an annoying flicker. An “over-
drop (1.5V or more) below VLED. This condition is sensed by lap” is built in so that at no time between segments are all
comparator C2, referenced 600 mV below VLED. This forces LEDs completely OFF in the dot mode. Generally 1 LED
the output of C2 low, which shuts off output transistor Q2, ex- fades in while the other fades out over a mV or more of
tinguishing LED No. 10. range (Note 3). The change may be much more rapid be-
VLED is sensed via the 20k resistor connected to pin 11. The tween LED No. 10 of one device and LED No. 1 of a second
very small current (less than 100 µA) that is diverted from device “chained” to the first.
LED No. 9 does not noticeably affect its intensity. The LM3914 features individually current regulated LED
An auxiliary current source at pin 1 keeps at least 100 µA driver transistors. Further internal circuitry detects when any
flowing through LED No. 11 even if the input voltage rises driver transistor goes into saturation, and prevents other cir-
high enough to extinguish the LED. This ensures that pin 9 of cuitry from drawing excess current. This results in the ability
LM3914 No. 1 is held low enough to force LED No. 10 off of the LM3914 to drive and regulate LEDs powered from a
when any higher LED is illuminated. While 100 µA does not pulsating DC power source, i.e., largely unfiltered. (Due to
normally produce significant LED illumination, it may be no- possible oscillations at low voltages a nominal bypass ca-
ticeable when using high-efficiency LEDs in a dark environ- pacitor consisting of a 2.2 µF solid tantalum connected from
ment. If this is bothersome, the simple cure is to shunt LED the pulsating LED supply to pin 2 of the LM3914 is recom-
No. 11 with a 10k resistor. The 1V IR drop is more than the mended.) This ability to operate with low or fluctuating volt-
900 mV worst case required to hold off LED No. 10 yet small ages also allows the display driver to interface with logic cir-
enough that LED No. 11 does not conduct significantly. cuitry, opto-coupled solid-state relays, and low-current
incandescent lamps.
OTHER DEVICE CHARACTERISTICS
The LM3914 is relatively low-powered itself, and since any
number of LEDs can be powered from about 3V, it is a very
efficient display driver. Typical standby supply current (all
Cascading LM3914s in Dot Mode
DS007970-6
www.national.com 8
LM3914
Zero-Center Meter, 20-Segment
DS007970-7
9 www.national.com
LM3914
Expanded Scale Meter, Dot or Bar
DS007970-8
*This application illustrates that the LED supply needs practically no filtering
Calibration: With a precision meter between pins 4 and 6 adjust R1 for voltage VD of 1.20V. Apply 4.94V to pin 5, and adjust R4 until LED No. 5 just lights.
The adjustments are non-interacting.
Application Example:
Grading 5V Regulators
Highest No.
Color VOUT(MIN)
LED on
10 Red 5.54
9 Red 5.42
8 Yellow 5.30
7 Green 5.18
6 Green 5.06
5V
5 Green 4.94
4 Green 4.82
3 Yellow 4.7
2 Red 4.58
1 Red 4.46
www.national.com 10
LM3914
“Exclamation Point” Display
DS007970-9
LEDs light up as illustrated with the upper lit LED indicating the actual input voltage. The display appears to increase resolution and provides an analog
indication of overrange.
Indicator and Alarm, Full-Scale Changes Display from Dot to Bar
DS007970-10
*The input to the Dot-Bar Switch may be taken from cathodes of other LEDs. Display will change to bar as soon as the LED so selected begins to light.
11 www.national.com
LM3914
Bar Display with Alarm Flasher
DS007970-11
Full-scale causes the full bar display to flash. If the junction of R1 and C1 is connected to a different LED cathode, the display will flash when that LED lights,
and at any higher input signal.
Adding Hysteresis (Single Supply, Bar Mode Only)
DS007970-12
Hysteresis is 0.5 mV to 1 mV
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LM3914
Operating with a High Voltage Supply (Dot Mode Only)
DS007970-13
The LED currents are approximately 10 mA, and the LM3914 outputs operate in saturation for minimum dissipation.
*This point is partially regulated and decreases in voltage with temperature. Voltage requirements of the LM3914 also decrease with temperature.
13 www.national.com
LM3914
20-Segment Meter with Mode Switch
DS007970-14
*The exact wiring arrangement of this schematic shows the need for Mode Select (pin 9) to sense the V+ voltage exactly as it appears on pin 3.
Programs LEDs to 10 mA
Application Hints tively high value resistors. These high-impedance ends

should be bypassed to pin 2 with at least a 0.001 µF capaci-
Three of the most commonly needed precautions for using tor, or up to 0.1 µF in noisy environments.
the LM3914 are shown in the first typical application drawing
Power dissipation, especially in bar mode should be given
showing a 0V–5V bar graph meter. The most difficult prob-
consideration. For example, with a 5V supply and all LEDs
lem occurs when large LED currents are being drawn, espe-
programmed to 20 mA the driver will dissipate over 600 mW.
cially in bar graph mode. These currents flowing out of the
In this case a 7.5Ω resistor in series with the LED supply will
ground pin cause voltage drops in external wiring, and thus
cut device heating in half. The negative end of the resistor
errors and oscillations. Bringing the return wires from signal
should be bypassed with a 2.2 µF solid tantalum capacitor to
sources, reference ground and bottom of the resistor string
pin 2 of the LM3914.
(as illustrated) to a single point very near pin 2 is the best so-
lution. Turning OFF of most of the internal current sources is ac-
complished by pulling positive on the reference with a cur-
Long wires from VLED to LED anode common can cause os-
rent source or resistance supplying 100 µA or so. Alternately,
cillations. Depending on the severity of the problem 0.05 µF
the input signal can be gated OFF with a transistor switch.
to 2.2 µF decoupling capacitors from LED anode common to
pin 2 will damp the circuit. If LED anode line wiring is inac- Other special features and applications characteristics will
cessible, often similar decoupling from pin 1 to pin 2 will be be illustrated in the following applications schematics. Notes
sufficient. have been added in many cases, attempting to cover any
special procedures or unusual characteristics of these appli-
If LED turn ON seems slow (bar mode) or several LEDs light
cations. A special section called “Application Tips for the
(dot mode), oscillation or excessive noise is usually the prob-
LM3914 Adjustable Reference” has been included with
lem. In cases where proper wiring and bypassing fail to stop
these schematics.
oscillations, V+ voltage at pin 3 is usually below suggested
limits. Expanded scale meter applications may have one or
both ends of the internal voltage divider terminated at rela-
www.national.com 14
LM3914
Application Hints (Continued)
Greatly Expanded Scale (Bar Mode Only)
APPLICATION TIPS FOR THE LM3914 ADJUSTABLE
REFERENCE
GREATLY EXPANDED SCALE (BAR MODE ONLY)

Placing the LM3914 internal resistor divider in parallel with a
section ( ≅ 230Ω) of a stable, low resistance divider greatly
reduces voltage changes due to IC resistor value changes
with temperature. Voltage V1 should be trimmed to 1.1V first
by use of R2. Then the voltage V2 across the IC divider string
can be adjusted to 200 mV, using R5 without affecting V1.
LED current will be approximately 10 mA.
NON-INTERACTING ADJUSTMENTS FOR EXPANDED

SCALE METER (4.5V to 5V, Bar or Dot Mode)
This arrangement allows independent adjustment of LED
brightness regardless of meter span and zero adjustments.
First, V1 is adjusted to 5V, using R2. Then the span (voltage
across R4) can be adjusted to exactly 0.5V using R6 without
affecting the previous adjustment.
R9 programs LED currents within a range of 2.2 mA to 20 mA
after the above settings are made.
DS007970-15
ADJUSTING LINEARITY OF SEVERAL STACKED

DIVIDERS
Three internal voltage dividers are shown connected in se-
ries to provide a 30-step display. If the resulting analog meter
is to be accurate and linear the voltage on each divider must
be adjusted, preferably without affecting any other adjust-
ments. To do this, adjust R2 first, so that the voltage across
R5 is exactly 1V. Then the voltages across R3 and R4 can
be independently adjusted by shunting each with selected
resistors of 6 kΩ or higher resistance. This is possible be-
cause the reference of LM3914 No. 3 is acting as a constant
current source.
The references associated with LM3914s No. 1 and No. 2
should have their Ref Adj pins (pin 8) wired to ground, and
their Ref Outputs loaded by a 620Ω resistor to ground. This
makes available similar 20 mA current outputs to all the
LEDs in the system.
If an independent LED brightness control is desired (as in
the previous application), a unity gain buffer, such as the
LM310, should be placed between pin 7 and R1, similar to
the previous application.
15 www.national.com
LM3914
Application Hints (Continued)
Non-Interacting Adjustments for Expanded Scale Meter (4.5V to 5V, Bar or Dot Mode)
DS007970-16
Other Applications
Adjusting Linearity of Several Stacked Dividers
• “Slow” — fade bar or dot display (doubles resolution)
• 20-step meter with single pot brightness control
• 10-step (or multiples) programmer
• Multi-step or “staging” controller
• Combined controller and process deviation meter
• Direction and rate indicator (to add to DVMs)
• Exclamation point display for power saving
• Graduations can be added to dot displays. Dimly light ev-
ery other LED using a resistor to ground
• Electronic “meter-relay” — display could be circle or
semi-circle
• Moving “hole” display — indicator LED is dark, rest of bar
lit
• Drives vacuum-fluorescent and LCDs using added pas-
sive parts
DS007970-17
www.national.com 16
LM3914
Connection Diagrams
Plastic Chip Carrier Package Dual-in-Line Package
DS007970-18
Top View DS007970-19

Order Number LM3914V
Top View
See NS Package Number V20A
Order Number LM3914N-1
See NS Package Number NA18A
Order Number LM3914N *
See NS Package Number N18A
* Discontinued, Life Time Buy date 12/20/99
17 www.national.com
LM3914
Physical Dimensions inches (millimeters) unless otherwise noted
Note: Unless otherwise specified.

1. Standard Lead Finish:
200 microinches /5.08 micrometer minimum
lead/tin 37/63 or 15/85 on alloy 42 or equivalent or copper
2. Reference JEDEC registration MS-001, Variation AC, dated May 1993.
Dual-In-Line Package (N)
Order Number LM3914N-1
NS Package Number NA18A
Plastic Chip Carrier Package (V)

Order Number LM3914V
NS Package Number V20A
www.national.com 18
LM3914 Dot/Bar Display Driver
Dual-In-Line Package (N)

Order Number LM3914N *
NS Package Number N18A
* Discontinued, Life Time Buy date 12/20/99
LIFE SUPPORT POLICY

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
systems which, (a) are intended for surgical implant support device or system whose failure to perform
into the body, or (b) support or sustain life, and can be reasonably expected to cause the failure of
whose failure to perform when properly used in the life support device or system, or to affect its
accordance with instructions for use provided in the safety or effectiveness.
labeling, can be reasonably expected to result in a
significant injury to the user.
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Order this document
by 4N25/D
GlobalOptoisolator
4N25
4N26
4N27
4N28
The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
• Most Economical Optoisolator Choice for Medium Speed, Switching Applications
• Meets or Exceeds All JEDEC Registered Specifications
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• I/O Interfacing 6
1
• Solid State Relays
STANDARD THRU HOLE
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
INPUT LED
Reverse Voltage VR 3 Volts
Forward Current — Continuous IF 60 mA SCHEMATIC
LED Power Dissipation @ TA = 25°C PD 120 mW
with Negligible Power in Output Detector
1 6
OUTPUT TRANSISTOR 2 5
Collector–Emitter Voltage VCEO 30 Volts 3 4
Emitter–Collector Voltage VECO 7 Volts

PIN 1. LED ANODE
Collector–Base Voltage VCBO 70 Volts
2. LED CATHODE
Collector Current — Continuous IC 150 mA 3. N.C.
4. EMITTER
Detector Power Dissipation @ TA = 25°C PD 150 mW
5. COLLECTOR
with Negligible Power in Input LED
6. BASE
TOTAL DEVICE
Isolation Surge Voltage(1) VISO 7500 Vac(pk)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C PD 250 mW
Ambient Operating Temperature Range TA – 55 to +100 °C
Storage Temperature Range Tstg – 55 to +150 °C
Soldering Temperature (10 sec, 1/16″ from case) TL 260 °C
1. Isolation surge voltage is an internal device dielectric breakdown rating.

1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
4N25 4N26 4N27 4N28
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)

Characteristic Symbol Min Typ(1) Max Unit
INPUT LED
Forward Voltage (IF = 10 mA) TA = 25°C VF — 1.15 1.5 Volts
TA = –55°C — 1.3 —
TA = 100°C — 1.05 —
Reverse Leakage Current (VR = 3 V) IR — — 100 µA
Capacitance (V = 0 V, f = 1 MHz) CJ — 18 — pF
OUTPUT TRANSISTOR
Collector–Emitter Dark Current 4N25,26,27 ICEO — 1 50 nA
(VCE = 10 V, TA = 25°C 4N28 — 1 100
(VCE = 10 V, TA = 100°C) All Devices ICEO — 1 — µA
Collector–Base Dark Current (VCB = 10 V) ICBO — 0.2 — nA
Collector–Emitter Breakdown Voltage (IC = 1 mA) V(BR)CEO 30 45 — Volts
Collector–Base Breakdown Voltage (IC = 100 µA) V(BR)CBO 70 100 — Volts
Emitter–Collector Breakdown Voltage (IE = 100 µA) V(BR)ECO 7 7.8 — Volts
DC Current Gain (IC = 2 mA, VCE = 5 V) hFE — 500 — —
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) CCE — 7 — pF
Collector–Base Capacitance (f = 1 MHz, VCB = 0) CCB — 19 — pF
Emitter–Base Capacitance (f = 1 MHz, VEB = 0) CEB — 9 — pF
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V) IC (CTR)(2) mA (%)
4N25,26 2 (20) 7 (70) —
4N27,28 1 (10) 5 (50) —
Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA) VCE(sat) — 0.15 0.5 Volts
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) ton — 2.8 — µs
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) toff — 4.5 — µs
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) tr — 1.2 — µs
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) tf — 1.3 — µs
Isolation Voltage (f = 60 Hz, t = 1 sec)(4) VISO 7500 — — Vac(pk)
Isolation Resistance (V = 500 V)(4) RISO 1011 — — Ω
Isolation Capacitance (V = 0 V, f = 1 MHz)(4) CISO — 0.2 — pF
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
4N25 4N26 4N27 4N28
TYPICAL CHARACTERISTICS
I C , OUTPUT COLLECTOR CURRENT (NORMALIZED)

2 10
PULSE ONLY
PULSE OR DC NORMALIZED TO:
VF, FORWARD VOLTAGE (VOLTS)
1.8 IF = 10 mA
1
1.6
1.4
0.1
TA = –55°C
1.2 25°C
100°C
1
1 10 100 1000 0.01 0.5 1 2 5 10 20 50
IF, LED FORWARD CURRENT (mA) IF, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
I C , OUTPUT COLLECTOR CURRENT (NORMALIZED)
28 10
7
IC , COLLECTOR CURRENT (mA)
24 IF = 10 mA 5 NORMALIZED TO TA = 25°C
20
2
16
5 mA 1
12 0.7
0.5
8
4 2 mA 0.2
1 mA
0 0.1
0 1 2 3 4 5 6 7 8 9 10 –60 –40 –20 0 20 40 60 80 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C)
Figure 3. Collector Current versus Figure 4. Output Current versus Ambient Temperature
Collector–Emitter Voltage
ICEO, COLLECTOR–EMITTER DARK CURRENT
100
NORMALIZED TO: 50 VCC = 10 V

VCE = 10 V
100 TA = 25°C
20
(NORMALIZED)
{
t, TIME (µs)
RL = 1000 tf
10 10
VCE = 30 V
1
5 RL = 100 { tf
tr
2 tr
10 V
0.1 1
0 20 40 60 80 100 0.1 0.2 0.5 1 2 5 10 20 50 100
TA, AMBIENT TEMPERATURE (°C) IF, LED INPUT CURRENT (mA)
Figure 5. Dark Current versus Ambient Temperature Figure 6. Rise and Fall Times
(Typical Values)
4N25 4N26 4N27 4N28
100 100
70 70
50 VCC = 10 V 50 VCC = 10 V
t off, TURN –OFF TIME ( µs)

t on, TURN –ON TIME ( µs)
20 RL = 1000 20
RL = 1000
10 100 10
7 7
100
5 10 5
10
2 2
1 1
0.1 0.2 0.5 0.7 1 2 5 7 10 20 50 70 100 0.1 0.2 0.5 0.7 1 2 5 7 10 20 50 70 100
IF, LED INPUT CURRENT (mA) IF, LED INPUT CURRENT (mA)
Figure 7. Turn–On Switching Times Figure 8. Turn–Off Switching Times

(Typical Values) (Typical Values)
4 20
I , TYPICAL COLLECTOR CURRENT (mA)
IF = 0 IB = 7 µA 18 CLED
f = 1 MHz
6 µA 16
3 CCB
C, CAPACITANCE (pF)
14
5 µA 12
2 4 µA 10
CEB
8
3 µA 6 CCE
1
2 µA 4
2
1 µA
C
0
0 2 4 6 8 10 12 14 16 18 20 0.05 0.1 0.2 0.5 1 2 5 10 20 50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
Figure 9. DC Current Gain (Detector Only) Figure 10. Capacitances versus Voltage
TEST CIRCUIT WAVEFORMS

INPUT PULSE
VCC = 10 V
IF = 10 mA RL = 100 Ω
10%
INPUT OUTPUT OUTPUT PULSE
90%
tr tf
ton toff
Figure 11. Switching Time Test Circuit and Waveforms

4N25 4N26 4N27 4N28
PACKAGE DIMENSIONS
–A–
NOTES:
6 4 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–B– 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
1 3 FORMED PARALLEL.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
F 4 PL C L A 0.320 0.350 8.13 8.89
N B 0.240 0.260 6.10 6.60
C 0.115 0.200 2.93 5.08
D 0.016 0.020 0.41 0.50
E 0.040 0.070 1.02 1.77
F 0.010 0.014 0.25 0.36
–T– K G 0.100 BSC 2.54 BSC
SEATING J 0.008 0.012 0.21 0.30
PLANE
G J 6 PL K 0.100 0.150 2.54 3.81
L 0.300 BSC 7.62 BSC
M 0.13 (0.005) M T B M A M
M 0 15 0 15
E 6 PL
N 0.015 0.100 0.38 2.54
D 6 PL
0.13 (0.005) M T A M B M STYLE 1:
PIN 1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
THRU HOLE
–A–
6 4
–B– NOTES:
1 3 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
L DIM MIN MAX MIN MAX
F 4 PL
H A 0.320 0.350 8.13 8.89
B 0.240 0.260 6.10 6.60
C 0.115 0.200 2.93 5.08
C D 0.016 0.020 0.41 0.50
E 0.040 0.070 1.02 1.77
–T– F 0.010 0.014 0.25 0.36
G G 0.100 BSC 2.54 BSC
J SEATING
H 0.020 0.025 0.51 0.63
PLANE
E 6 PL K 6 PL J 0.008 0.012 0.20 0.30
K 0.006 0.035 0.16 0.88
D 6 PL 0.13 (0.005) M T B M A M
L 0.320 BSC 8.13 BSC
S 0.332 0.390 8.43 9.90
0.13 (0.005) M T A M B M
*Consult factory for leadform

option availability
SURFACE MOUNT
4N25 4N26 4N27 4N28
–A– NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
6 4 3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
–B–
1 3 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.320 0.350 8.13 8.89
B 0.240 0.260 6.10 6.60
L C 0.115 0.200 2.93 5.08
F 4 PL N D 0.016 0.020 0.41 0.50
E 0.040 0.070 1.02 1.77
F 0.010 0.014 0.25 0.36
C G 0.100 BSC 2.54 BSC
J 0.008 0.012 0.21 0.30
–T– K 0.100 0.150 2.54 3.81
SEATING L 0.400 0.425 10.16 10.80
PLANE G N 0.015 0.040 0.38 1.02
K J
D 6 PL
E 6 PL 0.13 (0.005) M T A M B M
*Consult factory for leadform
option availability
0.4" LEAD SPACING

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support
perform when properly used in accordance with device or system, or to affect its safety or effectiveness.
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
www.fairchildsemi.com © 2000 Fairchild Semiconductor Corporation

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Centro de Educação Profissional Irmão Mário Cristóvão

Curso Técnico em Mecatrônica

Apostila de Laboratório de Eletrônica Analógica

Tempo de Execução: ____ aulas

3 - diodos 1N4007 – por aluno;

1) Para cada um dos circuitos (1, 2, 3, 4, 5, 6, 7 e 8), calcule as correntes e

2) Somente após o cálculo monte os circuitos na placa de pontes de terminais;

3) Realize as medidas de tensão sobre os resistores e os diodos, também e nos

4) Monte e identifique quais são as funções Lógicas dos circuitos 9 e 10.

Desenvolvimento do Circuito 1 – Cálculos

Desenvolvimento do Circuito 2 – Cálculos

Desenvolvimento do Circuito 3 – Cálculos

Desenvolvimento do Circuito 4 – Cálculos

Desenvolvimento do Circuito 5 – Cálculos

Desenvolvimento do Circuito 6 – Cálculos

Desenvolvimento do Circuito 7 – Cálculos

Desenvolvimento do Circuito 8 – Cálculos

Coloque as combinações Binárias e observe o que acontece na saída. Anote suas

Coloque as combinações Binárias e observe o que acontece na saída. Anote suas

Protocolo de recebimento de Relatório – esta parte fica no caderno de Laboratório

Relatório Recebido em : ______/______/______

Aluno:___________________________________________________ Turno: _____________

Esta parte deve ser anexada no relatório.

Aluno:___________________________________________________ Turno: _____________

Relatório Recebido em : ______/______/______

1. Circuito 1: ____________________________________________ Visto:_______

2. Circuito 2: ____________________________________________ Visto:_______

3. Circuito 3: ____________________________________________ Visto:_______

4. Circuito 4: ____________________________________________ Visto:_______

5. Circuito 5: ____________________________________________ Visto:_______

6. Circuito 6: ____________________________________________ Visto:_______

7. Circuito 7: ____________________________________________ Visto:_______

8. Circuito 8: ____________________________________________ Visto:_______

9. Circuito 9: ____________________________________________ Visto:_______

10. Circuito 10:____________________________________________Visto:_______

Projeto ponto de calibração do osciloscópio: ____________ Visto Projeto:___________

Projeto transformador e osciloscópio Visto Projeto:___________

Projeto:_________________________________________________ Visto Projeto:___________

Projeto:_________________________________________________ Visto Projeto:___________

Escala Volts/DIV Escala Volts/DIV

Projeto:_________________________________________________ Visto Projeto:___________

Projeto:_________________________________________________ Visto Projeto:___________

Escala Volts/DIV Escala Volts/DIV

Projeto:_________________________________________________ Visto Projeto:___________

Projeto:_________________________________________________ Visto Projeto:___________

Escala Volts/DIV Escala Volts/DIV

Protocolo de recebimento de Relatório – esta parte fica no caderno de Laboratório

Relatório Recebido em : ______/______/______

Aluno:___________________________________________________ Turno: _____________

Esta parte deve ser anexada no relatório.

Aluno:___________________________________________________ Turno: _____________

Relatório Recebido em : ______/______/______

1. Implemente o seguinte circuito Ceifador polarizado.

Siga o seguinte procedimento para o circuito acima:

Projeto:_________________________________________________ Visto Projeto:___________

Projeto:_________________________________________________ Visto Projeto:___________

Escala Volts/DIV Escala Volts/DIV

Projeto:_________________________________________________ Visto Projeto:___________

Projeto:_________________________________________________ Visto Projeto:___________

Escala Volts/DIV Escala Volts/DIV

Protocolo de recebimento de Relatório – esta parte fica no caderno de Laboratório

Relatório Recebido em : ______/______/______

Aluno:___________________________________________________ Turno: _____________

Relatório Recebido em : //__

Aluno:_______________________________________ Turno: _

Aluno:_______________________________________ Turno: _

Relatório Recebido em : //__

1. Circuito 1: ______________________________________ Visto:_

2. Circuito 2: ______________________________________ Visto:_

3. Circuito 3: ______________________________________ Visto:_

4. Circuito 4: ______________________________________ Visto:_

5. Circuito 5: ______________________________________ Visto:_

6. Circuito 6: ______________________________________ Visto:_

7. Circuito 7: ______________________________________ Visto:_

8. Circuito 8: ______________________________________ Visto:_

9. Circuito 9: ______________________________________ Visto:_

10. Circuito 10:______________________________________Visto:_

Projeto ponto de calibração do osciloscópio: __ Visto Projeto:_

Projeto:_______________________________________ Visto Projeto:_

Projeto:_______________________________________ Visto Projeto:_

Projeto:_______________________________________ Visto Projeto:_

Projeto:_______________________________________ Visto Projeto:_

Projeto:_______________________________________ Visto Projeto:_

Projeto:_______________________________________ Visto Projeto:_

Relatório Recebido em : //__

Aluno:_______________________________________ Turno: _

Aluno:_______________________________________ Turno: _

Relatório Recebido em : //__

Projeto:_______________________________________ Visto Projeto:_

Projeto:_______________________________________ Visto Projeto:_

Projeto:_______________________________________ Visto Projeto:_

Projeto:_______________________________________ Visto Projeto:_

Relatório Recebido em : //__

Aluno:_______________________________________ Turno: _

Aluno:_______________________________________ Turno: _

Relatório Recebido em : //__

Projeto:_______________________________________ Visto Projeto:_

Relatório Recebido em : //__

Aluno:_______________________________________ Turno: _

Aluno:_______________________________________ Turno: _

Relatório Recebido em : //__

Relatório Recebido em : //__

Aluno:_______________________________________ Turno: _

Aluno:_______________________________________ Turno: _

Relatório Recebido em : //__

Projeto:_______________________________________ Visto Projeto:_

Relatório Recebido em : //__

Aluno:_______________________________________ Turno: _

Aluno:_______________________________________ Turno: _

Relatório Recebido em : //__