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Microeletrônica - SEDRA
Microeletrônica - SEDRA
Figure 3.1 The ideal diode: (a) diode circuit symbol; (b) iv characteristic; (c) equivalent circuit in the
reverse direction; (d) equivalent circuit in the forward direction.
Copyright 2004 by Oxford University Press, Inc.
Figure 3.2 The two modes of operation of ideal diodes and the use of an external circuit to limit the
forward current (a) and the reverse voltage (b).
Copyright 2004 by Oxford University Press, Inc.
Figure 3.3 (a) Rectifier circuit. (b) Input waveform. (c) Equivalent circuit when vI 0. (d) Equivalent circuit
when vI 0. (e) Output waveform.
Copyright 2004 by Oxford University Press, Inc.
Exerccio 3.1
Esboe a caracteristica de transferncia do retificador de meia onda
Figure E3.1
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Exerccio 3.2
Esboce a forma de onda da tenso no diodo.
Figure E3.2
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Carregador de Baterias
No circuito abaixo, de um carregador de baterias de 12 V, a tenso vS
uma senoide de 24 V de amplitude.
1.
2.
3.
Figure 3.5 Diode logic gates: (a) OR gate; (b) AND gate (in a positive-logic system).
Copyright 2004 by Oxford University Press, Inc.
Exemplo 3.2.
Supondo os diodos ideais, determine os valores de I e V.
10
Figure E3.4
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11
12
Exerccio 3.5
A figura mostra o circuito de um voltmetro C.A. Ele utiliza um medidor de
bobina mvel cujo fundo de escala corresponde a uma corrente igual a 1 mA.
O medidor tem uma resistncia igual a 50 . Determine o valor de R de modo
que o medidor indique o fundo de escala para uma senoide de entrada com
20 V pico a pico.
Figure E3.5
Copyright 2004 by Oxford University Press, Inc.
13
14
IS corrente de saturao
i = I S (e
v
nVT
1)
Figure 3.8 The diode iv relationship with some scales expanded and others compressed in order to
reveal details.
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15
Equao do diodo
i = I S (e
v
nVT
1)
16
Equao do diodo
i = I S (e
kT
VT =
q
v
nVT
1)
Tenso trmica 25 mV a 20 oC
17
I1 = I S e
I2 = IS e
V1
nVT
V2
nVT
I2
I2
V2 V1 = nVT ln
= 2,3VT log
I1
I1
18
Figure 3.9 Illustrating the temperature dependence of the diode forward characteristic. At a constant
current, the voltage drop decreases by approximately 2 mV for every 1C increase in temperature.
Copyright 2004 by Oxford University Press, Inc.
19
i = I S (e
v
nVT
1)
i I S
A corrente reversa de diodos na verdade muito maior que IS, devido a
correntes parasitas que circulam externamente ao diodo.
A corrente reversa total dobra de valor para cada 10 oC de aumento da
temperatura.
20
Exerccio 3.9
Se V igual a 1V a 20 oC, determine o valor de V a 40 oC e a 0 oC.
Figure E3.9
Copyright 2004 by Oxford University Press, Inc.
21
ID = ISe
VD
nVT
V DD V D
ID =
R
Figure 3.10 A simple circuit used to illustrate the analysis of circuits in which the diode is forward
conducting.
Copyright 2004 by Oxford University Press, Inc.
22
Modelo exponencial
Figure 3.11 Graphical analysis of the circuit in Fig. 3.10 using the exponential diode model.
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23
Anlise Interativa
Exemplo 3.4
Determine a corrente ID e a tenso no diodo VD para o circuito da figura com
VDD = 5V e R = 1K. Assuma que o diodo tem uma corrente de 1 mA com
uma tenso de 0,7 V e que sua tenso cai de 0,1 V para cada dcada de
variao de corrente.
24
VD0 = 0,65 V
rD = 20
Figure 3.12 Approximating the diode forward characteristic with two straight lines: the piecewise-linear
model.
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25
Figure 3.13 Piecewise-linear model of the diode forward characteristic and its equivalent circuit
representation.
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26
Exemplo 3.5
Determine a corrente ID e a tenso no diodo VD para o circuito da figura com
VDD = 5V e R = 1K.
VD0 = 0,65 V
rD = 20
Figure 3.14 The circuit of Fig. 3.10 with the diode replaced with its piecewise-linear model of Fig. 3.13.
Copyright 2004 by Oxford University Press, Inc.
27
Figure 3.15 Development of the constant-voltage-drop model of the diode forward characteristics. A
vertical straight line (B) is used to approximate the fast-rising exponential. Observe that this simple model
predicts VD to within 0.1 V over the current range of 0.1 mA to 10 mA.
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28
Figure 3.16 The constant-voltage-drop model of the diode forward characteristics and its equivalent-circuit
representation.
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29
Execcio 3.12
Projete o circuito para fornecer uma tenso de sada igual a 2,4 V. Assuma que o diodo
tem uma corrente de 1 mA com uma tenso de 0,7 V e que sua tenso cai de 0,1 V para
cada dcada de variao de corrente.
Figure E3.12
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30
ID = ISe
VD
nVT
Figure 3.17 Development of the diode small-signal model. Note that the numerical values shown are for
a diode with n = 2.
Copyright 2004 by Oxford University Press, Inc.
31
VD
nVT
v D (t ) = V D + v d (t )
i D (t ) = I S e
i D (t ) = I S e
(V D + v d )
nVT
VD
nVT
i D (t ) = I D e
e x 1 + x para x 0
rd =
nVT
ID
vd
nVT
vd
nVT
i D (t ) I D (1 +
vd
)
nVT
Para:
vd
<< 1
nVT
32
Exemplo 3.6
A fonte V+ tem um valor mdio igual a 10 V e um sinal sinal senoidal superposto
de 1V de amplitude e frequncia igual a 60Hz. Calcule a tenso contnua nos
terminais do diodo e a amplitude da senoide que aparece em seus terminais. O
diodo apresenta uma queda de tenso de 0,7V em 1 mA e n = 2. R = 10 K.
Figure 3.18 (a) Circuit for Example 3.6. (b) Circuit for calculating the dc operating point. (c) Small-signal
equivalent circuit.
Copyright 2004 by Oxford University Press, Inc.
33
Exemplo 3.7
Trs diodos so utilizados para fornecer uma tenso constante de 2,1 V.
Calcule a variao da tenso de sada causada por:
1.
2.
Assuma n = 2.
34
O Diodo Zener
35
Caracterstica i v do diodo
VZ = VZ 0 + rz I Z
Figure 3.21 The diode iv characteristic with the breakdown region shown in some detail.
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36
VZ = VZ 0 + rz I Z
37
Exemplo 3.8
O diodo Zener da figura tem VZ = 6,8 V em IZ = 5 mA, rz = 20 e IZK = 0,2 mA.
A fonte V+ igual a 10 V e pode variar de 1 V.
1.
2.
3.
4.
5.
Figure 3.23 (a) Circuit for Example 3.8. (b) The circuit with the zener diode replaced with its equivalent
circuit model.
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38
Soluo
VZ = 6,8 V em IZ = 5 mA.
rz = 20
IZK = 0,2 mA
V+ =10 V 1 V.
39
Circuitos Retificadores
40
Figure 3.25 (a) Half-wave rectifier. (b) Equivalent circuit of the half-wave rectifier with the diode replaced
with its battery-plus-resistance model. (c) Transfer characteristic of the rectifier circuit. (d) Input and output
waveforms, assuming that rD <<R.
Copyright 2004 by Oxford University Press, Inc.
41
Figure 3.26 Full-wave rectifier utilizing a transformer with a center-tapped secondary winding: (a) circuit;
(b) transfer characteristic assuming a constant-voltage-drop model for the diodes; (c) input and output
waveforms.
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42
Retificador em Ponte
Figure 3.27 The bridge rectifier: (a) circuit; (b) input and output waveforms.
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43
Figure 3.28 (a) A simple circuit used to illustrate the effect of a filter capacitor. (b) Input and output
waveforms assuming an ideal diode. Note that the circuit provides a dc voltage equal to the peak of the
input sine wave. The circuit is therefore known as a peak rectifier or a peak detector.
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44
IL =
Vp
R
t
vo (t ) = V p e RC
I
Vr = L
fC
T
V p Vr = V p e RC
Figure 3.29 Voltage and current waveforms in the peak rectifier circuit with CR @ T. The diode is assumed
ideal.
Copyright 2004 by Oxford University Press, Inc.
45
1
cos( wt ) 1 ( wt ) 2
2
V p cos( wt ) = V p Vr
wt =
2Vr
Vp
i Dav = I L (1 +
i Dmx = I L (1 + 2
iCav = i Dav I L
2V p
Vr
2V p
Vr
46
Vr =
Vp
2 fCR
i Dav = I L (1 +
Vp
2Vr
i Dmx = I L (1 + 2
Vp
2Vr
47
Figure 3.31 The superdiode precision half-wave rectifier and its almost-ideal transfer characteristic. Note
that when vI > 0 and the diode conducts, the op amp supplies the load current, and the source is
conveniently buffered, an added advantage. Not shown are the op-amp power supplies.
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48
Circuitos limitadores
49
Figure 3.33 Applying a sine wave to a limiter can result in clipping off its two peaks.
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50
51
52
Exerccio 3.27
Supondo os diodos ideais, descreva a caracterstica de transferncia
do circuito.
Figure E3.27
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53
Figure 3.36 The clamped capacitor or dc restorer with a square-wave input and no load.
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54
55
O dobrador de tenso
Figure 3.38 Voltage doubler: (a) circuit; (b) waveform of the voltage across D1.
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56
Figure 3.39 Simplified physical structure of the junction diode. (Actual geometries are given in Appendix A.)
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57
Ligaes covalentes
Figure 3.40 Two-dimensional representation of the silicon crystal. The circles represent the inner core of
silicon atoms, with +4 indicating its positive charge of +4q, which is neutralized by the charge of the four
valence electrons. Observe how the covalent bonds are formed by sharing of the valence electrons. At 0 K,
all bonds are intact and no free electrons are available for current conduction.
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58
Ionizao trmica
n concentrao de eltrons
p concentrao de buracos
ni concentrao intrnsica
n = p = ni
Figure 3.41 At room temperature, some of the covalent bonds are broken by thermal ionization. Each
broken bond gives rise to a free electron and a hole, both of which become available for current
conduction.
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59
Concentrao intrnseca
ni2
E
G
BT 3e kT
60
Corrente de Difuso
J p = qD p
dp
dx
J n = qDn
dn
dx
Figure 3.42 A bar of intrinsic silicon (a) in which the hole concentration profile shown in (b) has been
created along the x-axis by some unspecified mechanism.
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61
v drift = p E
Corrente de Drift
-
J p drift = qp p E
J n drift = qn n E
J drift = q( n n + p p ) E
V
i
= q ( n n + p p )
A
L
1
q ( p p + n n )
Relao de Einstein
Dn
Dp
= VT
62
Semicondutores Dopados
Material tipo n: dopado com substncias doadoras. Ex: fsforo
nn0 N D
nn0 p n0 = ni2
ni2
p n0 =
ND
Figure 3.43 A silicon crystal doped by a pentavalent element. Each dopant atom donates a free electron
and is thus called a donor. The doped semiconductor becomes n type.
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63
Semicondutores Dopados
Material tipo p: dopado com substncias aceitadoras. Ex: boro
p p0 N A
nn0 p n0 = ni2
ni2
nn0 =
NA
Figure 3.44 A silicon crystal doped with a trivalent impurity. Each dopant atom gives rise to a hole, and the
semiconductor becomes p type.
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64
ID = IS
qx p AN A = qx n AN D
xn
NA
=
xp ND
V0 = VT ln(
Wdep = x n + x p =
2 S
q
1
1
+
N A ND
N AND
ni2
V0
Figure 3.45 (a) The pn junction with no applied voltage (open-circuited terminals). (b) The potential
distribution along an axis perpendicular to the junction.
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65
Figure 3.46 The pn junction excited by a constant-current source I in the reverse direction. To avoid
breakdown, I is kept smaller than IS. Note that the depletion layer widens and the barrier voltage increases
by VR volts, which appears between the terminals as a reverse voltage.
Copyright 2004 by Oxford University Press, Inc.
66
Capacitncia de transio
Cj =
dq j
dV R
V R =VQ
Figure 3.47 The charge stored on either side of the depletion layer as a function of the reverse voltage VR.
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67
Figure 3.49 The pn junction excited by a constant-current source supplying a current I in the forward
direction. The depletion layer narrows and the barrier voltage decreases by V volts, which appears as an
external voltage in the forward direction.
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68
Figure 3.50 Minority-carrier distribution in a forward-biased pn junction. It is assumed that the p region is
more heavily doped than the n region; NA @ ND.
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69
Problema 3.2
Supondo o diodo ideal, calcule os valores de I e V.
Figure P3.2
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70
Problema 3.3
Supondo o diodo ideal, calcule os valores de I e V.
Figure P3.3
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71
Problema 3.4
Em cada circuito, vI uma senoide de 10 V de amplitude e frequncia de 1 kHz.
Esboce a forma de onda de vo supondo os diodos ideais.
72
Problema 3.4
Em cada circuito, vI uma senoide de 10 V de amplitude e frequncia de 1 kHz.
Esboce a forma de onda de vo supondo os diodos ideais.
73
Problema 3.5
Figure P3.5
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74
Problema 3.6
Figure P3.6
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75
Problema 3.9
Supondo os diodos ideais, determine as correntes e tenses indicadas.
Figure P3.9
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76
Problema 3.10
Assumindo os diodos ideais, utilize o teorema de Thevenin para simplificar os
circuitos e ento determine os valores das tenses e correntes indicadas.
Figure P3.10
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77
Problema 3.16
Figure P3.16
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78
Problema 3.23
Figure P3.23
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79
Problema 3.25
Na figura, ambos diodos tem n=1, mas D1 tem 10 vezes a rea de juno de
D2. Qual o valor de V ? Qual deve ser o valor de I2 para obter V = 50 mV.
Figure P3.25
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80
Problema 3.26
Os diodos so idnticos conduzindo 10 mA com 0,7 V e 100 mA em 0,8 V.
Determine o valor de R para V = 80 mV.
Figure P3.26
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81
Problema 3.28
Figure P3.28
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82
Problema 3.54
Figure P3.54
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83
Problema 3.56
Figure P3.56
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84
Problema 3.57
Figure P3.57
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85
Problema 3.58
Figure P3.58
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86
Problema 3.59
Figure P3.59
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87
Problema 3.63
Figure P3.63
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88
Problema 3.82
Figure P3.82
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89
Problema 3.91
Figure P3.91
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90
Problema 3.92
Figure P3.92
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91
Problema 3.93
Figure P3.93
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92
Problema 3.97
Figure P3.97
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93
Problema 3.98
Figure P3.98
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94
Problema 3.102
Figure P3.102
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95
Problema 3.103
Figure P3.103
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96
Problema 3.105
Figure P3.105
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97
Problema 3.108
Figure P3.108
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98