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A)
Z T on
1
Pdon = IDSS · VDD dt = 20 · 103 · (250 · 10−6 · 40) · (25 · 10−9 ) = 5µW
T 0
1 tr IDS · VDD
Z
IDS (IDS RDS − VDD ) 2
Pr = t+ · t dt
T 0 tr tr2
Z 60·10−4
35(35 · 28 · 10−3 − 40) 2
3 35 · 40
Pr = 20 · 10 · ·t+ · t dt
0 60 · 10−9 (60 · 10−9 )2
∴ Pon = Pdon + Pr = 0.294
B)
1
kT = tdon + tr + tn → = 25 · 10−9 + 60 · 10−9 + tn
0.5 · 20 · 103
tn = 24.915µs
Z tn
1
Pn = 2
RDS IDS dt = 20 · 103 · (28 · 10−3 · 352 )24.915 · 10−6 = 17.09169W
T 0
GEEE - Eletrônica Industrial Exercício 0
C)
Z tn
1
P dof f = 2
RDS IDS dt = 20 · 103 · (28 · 10−3 · 352 )70 · 10−9 = 48.02mW
T 0
tf
IDS · VDD IDS · VDD 2
Z
1
Pf = t+ · t dt
T 0 tf tf 2
25ns
35 · 40 35 · 40 2
Z
3
Pf = 20 · 10 ·t+ · t dt = 0.116667
0 tf tf 2
D)
1
(1 − K)T = tdof f + tf + to → (1 − 0.5) 3
= 70 · 10−9 + 25 · 10−9 + to
20 · 10
to = 24.905µs
Z to
1
Po = IDSS VDD dt = 20 · 103 (250 · 10−6 · 40) · 24.905 · 10−6 = 4.981mW
T 0
E)